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BF1012S [INFINEON]

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network); 硅N沟道MOSFET四极管（针对低噪声，高增益控制输入级可达到1GHz工作电压5V综合稳定偏置网络）

BF1012S


元器件型号：	BF1012S
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) 硅N沟道MOSFET四极管（针对低噪声，高增益控制输入级可达到1GHz工作电压5V综合稳定偏置网络）晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
PDF文件：	总4页 (文件大小：46K)
下载文档：	下载PDF数据表文档文件
型号参数：BF1012S参数

BF1012W

SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

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56 INFINEON

BF10-6

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF10-8

COPPER ALLOY, TIN FINISH, FORK TERMINAL

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0 3M

BF1100

Dual-gate MOS-FETs

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74 PHILIPS

BF1100

Dual-gate MOS-FETs

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52 PHILIPS

BF1100/R

Dual-Gate MOS-FETs

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8 ETC

BF1100/WR

Dual-Gate MOS-FETs

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24 ETC

BF1100_15

Dual-gate MOS-FETs

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0 JMNIC

BF1100_2015

Dual-gate MOS-FETs

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0 JMNIC

BF1100R

Dual-gate MOS-FETs

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23 PHILIPS

BF1100R

Dual-gate MOS-FETs

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48 PHILIPS

BF1100R,215

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal

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0 PHILIPS

BF1100R,235

Dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large

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0 PHILIPS

BF1100R-T

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

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0 PHILIPS

BF1100RT/R

TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R

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21 ETC

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