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元器件品牌
BGA751L7
[INFINEON]
Low Power Single-Band UMTS LNA (800, 900 MHz); 低功耗，单频UMTS LNA （ 800 ， 900兆赫）
元器件型号：
BGA751L7
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Low Power Single-Band UMTS LNA (800, 900 MHz)
低功耗，单频UMTS LNA （ 800 ， 900兆赫）
射频和微波 射频放大器 微波放大器
PDF文件：
总22页 (文件大小：654K)
下载文档：
下载PDF数据表文档文件
型号参数：BGA751L7参数
查看货源
BGA751L7E6327XTSA1
Narrow Band Low Power Amplifier, 875MHz Min, 885MHz Max, 2 X 1.30 MM, 0.39 MM HEIGHT, GREEN, LEADLESS, TSLP-7
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INFINEON
BGA751N7
Telecom Circuit, 1-Func, Bipolar, PDSO6, 2 X 1.30 MM, 0.39 MM HEIGHT, GREEN, TSNP-7/6
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INFINEON
BGA751N7E6327XTSA1
Telecom Circuit, 1-Func, Bipolar, PDSO6, 2 X 1.30 MM, 0.39 MM HEIGHT, GREEN, TSNP-7/6
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INFINEON
BGA758L7
5-6 GHz LNA for WLAN
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156
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13
INFINEON
BGA771N16
High Linearity Dual-Band UMTS LNA (1900/1800/2100, 800/900MHz)
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29
INFINEON
BGA777L7
Single-Band UMTS LNA (2300 - 2700 MHz)
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10
INFINEON
BGA7H1N6
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
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INFINEON
BGA7H1N6E6327
Material Content Data Sheet
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INFINEON
BGA7H1N6E6327_15
Material Content Data Sheet
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INFINEON
BGA7H1N6E6327XTSA1
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
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0
INFINEON
BGA7L1N6
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
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INFINEON
BGA7L1N6E6327XTSA1
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
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INFINEON
BGA7M1N6
Infineonâs New LTE Low Noise Amplifiers Almost Double Smartphone Data Rates
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156
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INFINEON
BGA7M1N6E6327
Material Content Data Sheet
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INFINEON
BGA7M1N6E6327_15
Material Content Data Sheet
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INFINEON
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