BSC123N10LSG [INFINEON]

OptiMOS™2 Power-Transistor; OptiMOS®2功率三极管
BSC123N10LSG
元器件型号: BSC123N10LSG
生产厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用:

OptiMOS™2 Power-Transistor
OptiMOS®2功率三极管

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
PDF文件: 总10页 (文件大小:442K)
下载文档:  下载PDF数据表文档文件
型号参数:BSC123N10LSG参数

BSC123N10LSGATMA1

Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC12DN20NS3G

OptiMOSTM3 Power-Transistor

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59 INFINEON

BSC12DN20NS3GATMA1

Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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2 INFINEON

BSC130P03LSG

OptiMOS™-P Power-Transistor

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16 INFINEON

BSC150N03LDG

OptiMOS™3 Power-Transistors

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49 INFINEON

BSC150N03LDGATMA1

Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC152N10NSFG

OptiMOS™2 Power-Transistor

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19 INFINEON

BSC152N10NSFGATMA1

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC159N10LSFG

OptiMOS?2 Power-Transistor

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35 INFINEON

BSC159N10LSFGATMA1

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC160N10NS3G

OptiMOS3 Power-Transistor

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105 INFINEON

BSC160N10NS3GATMA1

Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC160N10NSG

Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

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0 INFINEON

BSC160N15NS5

Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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0 INFINEON

BSC160N15NS5ATMA1

Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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3 INFINEON