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元器件品牌
BSL806N
[INFINEON]
OptiMOS™2 Small-Signal-Transistor; 的OptiMOS ™ 2小信号三极管
元器件型号：
BSL806N
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
OptiMOS™2 Small-Signal-Transistor
的OptiMOS ™ 2小信号三极管
PDF文件：
总9页 (文件大小：236K)
下载文档：
下载PDF数据表文档文件
型号参数：BSL806N参数
查看货源
BSL806NH6327
Small Signal Field-Effect Transistor
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156
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0
INFINEON
BSL806NH6327XTSA1
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Warning
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156
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0
INFINEON
BSL806NL6327HTSA1
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
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156
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0
INFINEON
BSLGH
SIDE LEVER GUN+TUBE&CONNECTOR
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156
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7
ETC
BSM05GD100D
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C)
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46
ETC
BSM100GAL100D
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C)
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: Undefined variable $rtag in
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156
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71
ETC
BSM100GAL120DLCK
IGBT-modules
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156
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23
INFINEON
BSM100GAL120DN2
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
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: Undefined variable $rtag in
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156
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121
INFINEON
BSM100GAL120DN2
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN
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: Undefined variable $rtag in
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156
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0
INFINEON
BSM100GB100D
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C)
Warning
: Undefined variable $rtag in
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149
ETC
BSM100GB100D
Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7
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156
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4
INFINEON
BSM100GB120D
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C)
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: Undefined variable $rtag in
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156
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237
ETC
BSM100GB120DLC
IGBT-Modules
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216
EUPEC
BSM100GB120DLCK
IGBT-Modules
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183
EUPEC
BSM100GB120DN2
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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502
INFINEON
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