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BSM10GD60DN2 [INFINEON]

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes; IGBT的功率模块（电源模块3相全桥包括快速续流二极管

BSM10GD60DN2


元器件型号：	BSM10GD60DN2
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes IGBT的功率模块（电源模块3相全桥包括快速续流二极管电源电路二极管双极性晶体管栅
PDF文件：	总9页 (文件大小：125K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM10GD60DN2参数

BSM10GP120

Technische Information

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127 INFINEON

BSM10GP1202

IGBT Module

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454 ETC

BSM10GP60

IGBT-Module

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213 EUPEC

BSM10GP602

IGBT Module

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33 EUPEC

BSM111

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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24 INFINEON

BSM111

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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38 INFINEON

BSM111AR

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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63 INFINEON

BSM111AR(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D)

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24 ETC

BSM120D12P2C005

Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8

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1 ROHM

BSM121

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)

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31 ETC

BSM121AR

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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32 INFINEON

BSM121AR(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)

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20 ETC

BSM141

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D)

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25 ETC

BSM141

Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4

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0 INFINEON

BSM150GAL100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)

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39 ETC

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