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元器件品牌
BSM10GP120
[INFINEON]
Technische Information; TECHNISCHE信息
元器件型号：
BSM10GP120
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Technische Information
TECHNISCHE信息
晶体 晶体管 双极性晶体管 栅 局域网
PDF文件：
总13页 (文件大小：124K)
下载文档：
下载PDF数据表文档文件
型号参数：BSM10GP120参数
查看货源
BSM10GP1202
IGBT Module
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156
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454
ETC
BSM10GP60
IGBT-Module
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156
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213
EUPEC
BSM10GP602
IGBT Module
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on line
156
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33
EUPEC
BSM111
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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on line
156
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24
INFINEON
BSM111
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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156
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38
INFINEON
BSM111AR
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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: Undefined variable $rtag in
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on line
156
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63
INFINEON
BSM111AR(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D)
Warning
: Undefined variable $rtag in
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156
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24
ETC
BSM120D12P2C005
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
Warning
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156
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1
ROHM
BSM121
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
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: Undefined variable $rtag in
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31
ETC
BSM121AR
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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156
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32
INFINEON
BSM121AR(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
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: Undefined variable $rtag in
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156
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20
ETC
BSM141
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D)
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: Undefined variable $rtag in
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156
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25
ETC
BSM141
Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
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on line
156
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0
INFINEON
BSM150GAL100D
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)
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: Undefined variable $rtag in
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156
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39
ETC
BSM150GAL120DLC
IGBT Module
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156
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45
ETC
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