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元器件品牌
BSM111
[INFINEON]
SIMOPAC Module (Power module Single switch N channel Enhancement mode); SIMOPAC模块（电源模块，单开关N沟道增强模式）
元器件型号：
BSM111
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
SIMOPAC模块（电源模块，单开关N沟道增强模式）
电源电路 开关
PDF文件：
总9页 (文件大小：219K)
下载文档：
下载PDF数据表文档文件
型号参数：BSM111参数
查看货源
BSM111AR
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
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63
INFINEON
BSM111AR(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D)
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: Undefined variable $rtag in
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24
ETC
BSM120D12P2C005
Power Field-Effect Transistor, 120A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, MODULE-10/8
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1
ROHM
BSM121
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
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: Undefined variable $rtag in
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31
ETC
BSM121AR
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
Warning
: Undefined variable $rtag in
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156
-
32
INFINEON
BSM121AR(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
Warning
: Undefined variable $rtag in
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20
ETC
BSM141
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D)
Warning
: Undefined variable $rtag in
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25
ETC
BSM141
Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
Warning
: Undefined variable $rtag in
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on line
156
-
0
INFINEON
BSM150GAL100D
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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39
ETC
BSM150GAL120DLC
IGBT Module
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156
-
45
ETC
BSM150GAL120DN2
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
Warning
: Undefined variable $rtag in
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156
-
58
INFINEON
BSM150GAL120DN2E3166
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
41
INFINEON
BSM150GAL120DN2E3166
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-7
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
INFINEON
BSM150GAR120DN2
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
INFINEON
BSM150GAR120DN2HOSA1
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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0
INFINEON
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