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元器件品牌
BSM121AR
[INFINEON]
SIMOPAC Module (Power module Single switch N channel Enhancement mode); SIMOPAC模块（电源模块，单开关N沟道增强模式）
元器件型号：
BSM121AR
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
SIMOPAC Module (Power module Single switch N channel Enhancement mode)
SIMOPAC模块（电源模块，单开关N沟道增强模式）
晶体 电源电路 开关 晶体管 脉冲 局域网
PDF文件：
总7页 (文件大小：210K)
下载文档：
下载PDF数据表文档文件
型号参数：BSM121AR参数
查看货源
BSM121AR(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)
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20
ETC
BSM141
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D)
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: Undefined variable $rtag in
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25
ETC
BSM141
Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4
Warning
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156
-
0
INFINEON
BSM150GAL100D
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)
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39
ETC
BSM150GAL120DLC
IGBT Module
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156
-
45
ETC
BSM150GAL120DN2
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
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58
INFINEON
BSM150GAL120DN2E3166
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
Warning
: Undefined variable $rtag in
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-
41
INFINEON
BSM150GAL120DN2E3166
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-7
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: Undefined variable $rtag in
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156
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0
INFINEON
BSM150GAR120DN2
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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156
-
0
INFINEON
BSM150GAR120DN2HOSA1
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Warning
: Undefined variable $rtag in
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156
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0
INFINEON
BSM150GB100D
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
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101
ETC
BSM150GB100D
暂无描述
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1
INFINEON
BSM150GB120D
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
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83
ETC
BSM150GB120DLC
Technische Information / Technical Information
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94
EUPEC
BSM150GB120DLC
62mm C-series module with low loss IGBT2 and EmCon diode
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33
INFINEON
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