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BSM200GB120 [INFINEON]

IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes); IGBT功率模块（低损耗IGBT的低电感半桥包括快速续流二极管）

BSM200GB120


元器件型号：	BSM200GB120
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes) IGBT功率模块（低损耗IGBT的低电感半桥包括快速续流二极管）二极管双极性晶体管
PDF文件：	总9页 (文件大小：132K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM200GB120参数

BSM200GB120DL

IGBT Power Module (Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes)

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73 INFINEON

BSM200GB120DLC

IGBT-Modules

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164 EUPEC

BSM200GB120DN2

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

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531 INFINEON

BSM200GB120DN2

IGBT Power Module

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120 EUPEC

BSM200GB170DLC

Technical Information

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136 EUPEC

BSM200GB60DLC

Technicshe Information

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254 EUPEC

BSM200GB60DLCHOSA1

Insulated Gate Bipolar Transistor, 230A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

BSM200GD60DLC

IGBT Module

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46 ETC

BSM200GD60DLC

IGBT-Module

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71 EUPEC

BSM200GT120DN2

IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)

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49 INFINEON

BSM204A

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 50V V(BR)DSS | 200A I(D)

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74 ETC

BSM20GD60DLC

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES

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0 INFINEON

BSM20GD60DLCE3224

IGBT Module

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71 ETC

BSM20GD60DN2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)

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41 ETC

BSM20GD60DN2E3224

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)

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21 ETC

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