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元器件品牌
BSM25GD100D
[INFINEON]
IGBT MODULE; IGBT模块
元器件型号：
BSM25GD100D
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
IGBT MODULE
IGBT模块
晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件：
总8页 (文件大小：330K)
下载文档：
下载PDF数据表文档文件
型号参数：BSM25GD100D参数
查看货源
BSM25GD120D
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 25A I(C)
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156
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116
ETC
BSM25GD120D2
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
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156
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71
INFINEON
BSM25GD120DLCE3224
IGBT-Module
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156
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75
EUPEC
BSM25GD120DLCE3224
IGBT Module
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156
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66
ETC
BSM25GD120DN1
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
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3
INFINEON
BSM25GD120DN2
IGBT Power Module
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156
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574
EUPEC
BSM25GD120DN2E3224
IGBT Power Module
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: Undefined variable $rtag in
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156
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497
EUPEC
BSM25GP120
IGBT Module
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156
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797
ETC
BSM25GP120
Technical Information IGBT-Modules
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156
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492
EUPEC
BSM282F
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 11A I(D)
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: Undefined variable $rtag in
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156
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31
ETC
BSM284F
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 20A I(D)
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: Undefined variable $rtag in
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156
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50
ETC
BSM294F
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 18A I(D)
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: Undefined variable $rtag in
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156
-
29
ETC
BSM300C12P3E201
Power Field-Effect Transistor,
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on line
156
-
0
ROHM
BSM300C12P3E301
Power Field-Effect Transistor,
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156
-
0
ROHM
BSM300GA100D
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 300A I(C)
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: Undefined variable $rtag in
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156
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55
ETC
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