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BSM50GD60DN2E3226 [INFINEON]

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes); IGBT的功率模块（电源模块3相全桥包括快速续流二极管）

BSM50GD60DN2E3226


元器件型号：	BSM50GD60DN2E3226
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT的功率模块（电源模块3相全桥包括快速续流二极管）晶体电源电路二极管晶体管双极性晶体管栅
PDF文件：	总9页 (文件大小：125K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM50GD60DN2E3226参数

BSM50GP120

IGBT-Modules

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478 EUPEC

BSM50GP120

IGBT Module

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527 ETC

BSM50GP120BOSA1

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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4 INFINEON

BSM50GP60

Hochstzulassige Werte / Maximum rated values

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177 EUPEC

BSM50GP602

IGBT Module

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50 ETC

BSM50GP60G

IGBT Module

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56 ETC

BSM50GX120DN2

IGBT Power Module

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496 INFINEON

BSM600GA120DLC

900A, 1200V, N-CHANNEL IGBT

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3 ROCHESTER

BSM600GA120DLCHOSA1

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel,

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1 INFINEON

BSM600GA120DLCS

IGBT, MODULE-5

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0 ROCHESTER

BSM600GA120DLCSHOSA1

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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0 INFINEON

BSM651F

TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 9A I(D)

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171 ETC

BSM652F

TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 17A I(D)

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26 ETC

BSM681F

TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 800V V(BR)DSS | 5.3A I(D)

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16 ETC

BSM682F

TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 800V V(BR)DSS | 10A I(D)

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16 ETC

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