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FP25R12U1T4 [INFINEON]

SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC; SmartPIM模块海沟/场终止IGBT 4和发射极控制二极管4和压接/ NTC
FP25R12U1T4
元器件型号： FP25R12U1T4
生产厂家： INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述和应用：

SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
SmartPIM模块海沟/场终止IGBT 4和发射极控制二极管4和压接/ NTC

二极管 双极性晶体管
PDF文件： 总12页 (文件大小：658K)
下载文档：  下载PDF数据表文档文件
型号参数：FP25R12U1T4参数
 查看货源

FP25R12W1T7B11BPSA1

 Insulated Gate Bipolar Transistor,

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3 INFINEON

FP25R12W2T4

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547 INFINEON

FP25R12W2T4_B11

 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

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114 INFINEON

FP25R12W2T4B11BOMA1

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0 INFINEON

FP25R12W2T4BOMA1

 Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP25R12W2T4ENG

 Insulated Gate Bipolar Transistor,

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0 INFINEON

FP25R12W2T4P

 Insulated Gate Bipolar Transistor,

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1 INFINEON

FP25R12W2T4PB11BPSA1

 Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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3 INFINEON

FP25R12W2T4PBPSA1

 Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP25S

 2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

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29 VMI

FP2616-I-22

 Ferrite Cores

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15 NEC

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FP29311F

 RESISTOR, METAL OXIDE FILM, 2 W, 1 %, 150 ppm, 9310 ohm, THROUGH HOLE MOUNT, AXIAL LEADED

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0 VISHAY

FP29311F

 RESISTOR, METAL OXIDE FILM, 2 W, 1 %, 150 ppm, 9310 ohm, THROUGH HOLE MOUNT, AXIAL LEADED

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0 VISHAY

FP29313F

 RESISTOR, METAL OXIDE FILM, 2 W, 1 %, 150 ppm, 931000 ohm, THROUGH HOLE MOUNT, AXIAL LEADED

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0 VISHAY
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