SGB30N60 [INFINEON]

Fast IGBT in NPT-technology; 在NPT技术的快速IGBT
SGB30N60
型号: SGB30N60
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Fast IGBT in NPT-technology
在NPT技术的快速IGBT

晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅
文件: 总12页 (文件大小:418K)
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SGB30N60_09

Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

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6 INFINEON

SGB30N60ATMA1

Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3

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0 INFINEON

SGB30UF

HIGH VOLTAGE RECTIFIER

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8 SSDI

SGB30UF

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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8 SSDI

SGB30UFSMS

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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4 SSDI

SGB30UFSMS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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10 SSDI

SGB30UFSMSS

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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8 SSDI

SGB30UFSMSS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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0 SSDI

SGB30UFSMSTX

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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5 SSDI

SGB30UFSMSTX

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED, SMS, 2 PIN

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0 SSDI

SGB30UFSMSTXV

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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8 SSDI

SGB35UF

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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7 SSDI

SGB35UF

HIGH VOLTAGE RECTIFIER

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10 SSDI

SGB35UFS

Rectifier Diode, 1 Element, 0.06A, Silicon, HERMETIC SEALED PACKAGE-2

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0 SSDI

SGB35UFSMS

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

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7 SSDI