RD28F3208C3T100 [INTEL]

Memory IC;
RD28F3208C3T100
型号: RD28F3208C3T100
厂家: INTEL CORPORATION    INTEL CORPORATION
描述:

Memory IC

文件: 总66页 (文件大小:605K)
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RD28F3208C3T70

3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

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43 INTEL

RD28F3208C3T90

3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

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27 INTEL

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0 INTEL

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0 INTEL

RD28F3208W30T85

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA80, 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80

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0 INTEL

RD28F6408W30B70

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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27 INTEL

RD28F6408W30B85

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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23 INTEL

RD28F6408W30T70

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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37 INTEL

RD28F6408W30T85

1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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13 INTEL

RD28S-6/206708

CENTRIFUGAL BLOWER

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12 EBMPAPST

RD28S-6206708

CENTRIFUGAL BLOWER

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14 EBMPAPST

RD2A

Ultra-Fast-Recovery Rectifier Diodes

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8 ETC

RD2A

Ultra-Fast-Recovery Rectifier Diodes

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4 ETC

RD2A

Ultra-Fast-Recovery Rectifier Diodes

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13 SANKEN

RD2A476M1012MPA

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 100V, 20% +Tol, 20% -Tol, 47uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT

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0 SAMWHA