IFN146 [INTERFET]
Dual N-Channel Silicon Junction Field-Effect Transistor; 双N沟道硅结型场效应晶体管
| 型号： | IFN146 |
| 厂家： | 
INTERFET CORPORATION |
| 描述： | Dual N-Channel Silicon Junction Field-Effect Transistor |
| 文件： | 总1页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
01/99
D-5
IFN146
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T = 25¡C
¥ Low-Noise Audio Amplifier
¥ Equivalent to Japanese 2SK146
A
Reverse Gate Source & Reverse Gate Drain Voltage
– 40 V
10 mA
375 mW
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
3 mW/°C
Storage Temperature Range
– 65°C to 200°C
At 25°C free air temperature:
Static Electrical Characteristics
IFN146
Typ
Process NJ450
Test Conditions
I = – 1 µA, V = ØV
Min
Max
Unit
Gate Source Breakdown Voltage
Gate Reverse Current
V
– 40
V
nA
µA
V
(BR)GSS
G
DS
– 1
– 1
V
= – 30V, V = ØV
GS
DS
I
GSS
V
= – 30V, V = ØV
T = 150°C
GS
DS
A
Gate Source Cutoff Voltage
V
– 0.3
30
– 1.2
30
V
= 10V, I = 1 µA
GS(OFF)
DS
D
Drain Saturation Current (Pulsed)
I
mA
V
= 10V, V = ØV
DSS
DS
GS
Dynamic Electrical Characteristics
V
= 10V, V = ØV
Common Source
Forward Transconductance
DS
GS
g
40
f = 1 kHz
f = 1 kHz
f = 1 kHz
mS
pF
fs
I
= 5 mA
DSS
Common Source Input Capacitance
C
75
15
V
= 10V, V = ØV
iss
DS
GS
Common Source Reverse
Transfer Capacitance
C
V
= 10V, I = ØA
pF
DS
D
rss
V
= 10V, I = 5 mA
DS
D
Noise Figure
NF
1
f = 1 kHz
dB
R = 100Ω
G
Differential Gate Source Voltage
|V – V
|
20
mV
V
= 10V, I = 5 mA
GS1 GS2
DS D
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain,
5 Source, 6 Gate, 7 Drain
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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