NJ30L [INTERFET]
Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier; 硅结型场效应晶体管的低噪声，高增益放大器
| 型号： | NJ30L |
| 厂家： | 
INTERFET CORPORATION |
| 描述： | Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier |
| 文件： | 总2页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F-16
01/99
NJ30L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
G
Gate Current, Ig
10 mA
+150°C
– 65°C to +175°C
Operating Junction Temperature, Tj
Storage Temperature, Ts
S-D
Devices in this Databook based on the NJ30L Process.
S-D
Datasheet
2N5911, 2N5912
IFN5911, IFN5912
SMP5911
G
SMP5912
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
NJ30L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
– 25
– 30
– 10
V
pA
mA
V
I = – 1 µA, V = ØV
(BR)GSS
G
DS
I
– 100
40
V
= – 15V, V = ØV
GSS
GS
DS
I
2
V
= 15V, V = ØV
DSS
DS
GS
V
– 0.5
– 6
V
= 15V, I = 1 nA
GS(OFF)
DS
D
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
g
8
mS
pF
pF
V
= 15V, V = ØV
f = 1 kHz
DS
GS
fs
C
5
V
= 15V, V = ØV
f = 1 MHz
f = 1 MHz
f = 1 kHz
iss
DS
GS
Feedback Capacitance
Equivalent Noise Voltage
C
1.5
2.5
V
= 15V, V = ØV
DS
GS
rss
e¯
nV/√HZ V = 10V, I = 5 mA
DS D
N
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
01/99
F-17
NJ30L Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of V
DS
G as a Function of V
fs
GS(OFF)
VGS(OFF) = Ð2.5 V
15
12
9
10
9
V
GS = Ø V
GS = –0.5 V
GS = –1.0 V
GS = –1.5 V
GS = –2.0 V
10
Drain to Source Voltage in Volts
V
8
V
7
6
6
V
3
5
V
0
5
15
20
0
– 1
– 2
– 3
– 4
– 5
– 6
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
Forward Tranconductance vs. Drain Current
GS(OFF)
35
30
25
20
15
10
5
10
8
IDSS = 10 mA
IDSS = 16 mA
6
IDSS = 24 mA
4
2
0
– 1
– 2
– 3
– 4
– 5
– 6
0.1
1
10
20
Drain Source Cutoff Voltage in Volts
Drain Current in mA
Input Capacitance as a Function of V
Feedback Capacitance as a Function of V
GS
GS
7
6
5
4
3
2.5
V
DS = 5 V
2.0
1.5
1.0
0.5
V
DS = 15 V
V
DS = 5 V
VDS = 15 V
0
4
8
12
16
0
– 4
– 8
– 12
– 16
Gate Source Voltage in Volts
Gate Source Voltage in Volts
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