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IXTH15N70 [INTERFET]

N-Channel Enhancement Mode; N沟道增强模式

IXTH15N70


元器件型号：	IXTH15N70
生产厂家：	INTERFET CORPORATION
描述和应用：	N-Channel Enhancement Mode N沟道增强模式
PDF文件：	总2页 (文件大小：38K)
下载文档：	下载PDF数据表文档文件
型号参数：IXTH15N70参数

IXTH15P15

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 15A I(D) | TO-218VAR

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20 ETC

IXTH15P20

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR

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17 ETC

IXTH160N075T

Power Field-Effect Transistor, 160A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 IXYS

IXTH160N10T

Preliminary Technical Information TrenchMVTM Power MOSFET

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32 IXYS

IXTH160N15T

Power Field-Effect Transistor, 160A I(D), 150V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3

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1 IXYS

IXTH16N10D2

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTH16N20D2

Depletion Mode MOSFET

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13 IXYS

IXTH16N50D2

Power Field-Effect Transistor, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

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0 IXYS

IXTH16N50D2

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTH16P20

Standard Power MOSFET

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6 IXYS

IXTH16P20

Standard Power MOSFET

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25 IXYS

IXTH16P60P

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode

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39 IXYS

IXTH16P60P

Power Field-Effect Transistor, 16A I(D), 600V, 0.72ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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2 IXYS

IXTH17N55

TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17A I(D) | TO-218VAR

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12 ETC

IXTH17N55

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

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