BUZ72A [INTERSIL]
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET; 9A ， 100V ， 0.250 Ohm的N通道功率MOSFET
| 型号： | BUZ72A |
| 厂家： | 
Intersil |
| 描述： | 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ72A
Data Sheet
June 1999
File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power
MOSFET
Features
• 9A, 100V
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
• r
= 0.250Ω
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Formerly developmental type TA17401.
• Majority Carrier Device
Ordering Information
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
PART NUMBER
PACKAGE
BRAND
BUZ72A
BUZ72A
TO-220AB
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-23
BUZ72A
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
BUZ72A
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
9
36
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
40
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
0.32
W/ C
o
-55 to 150
E
C
J
STG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
55/150/56
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
-
MAX
-
UNITS
V
I
100
DSS
D
GS
V
V
= V , I = 1mA (Figure 9)
2.1
3
4
V
GS(TH)
GS
DS
D
o
Zero Gate Voltage Drain Current
I
T = 25 C, V
J
= 100V, V
GS
= 0V
= 0V
-
20
250
1000
100
0.250
-
µA
µA
nA
Ω
DSS
DS
o
T = 125 C, V
= 100V, V
= 0V
-
100
10
J
DS
DS
GS
Gate to Source Leakage Current
I
V
= 20V, V
-
GSS
GS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 5A, V
= 10V (Figure 8)
-
0.23
3.8
20
DS(ON)
D
GS
g
V
= 25V, I = 5A (Figure 11)
2.7
S
DS
CC
D
fs
t
V
= 30V, ID ≈ 2.9A, V
GS
= 10Ω
= 10V, R
= 50Ω,
GS
-
-
-
-
-
-
-
30
ns
ns
ns
ns
pF
pF
pF
d(ON)
R
L
Rise Time
t
45
70
r
Turn-Off Delay Time
t
70
90
d(OFF)
Fall Time
t
55
70
f
Input Capacitance
C
V
= 25V, V = 0V, f = 1MHz
GS
(Figure 10)
450
150
80
600
240
130
ISS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C
o
R
≤3.1
≤75
C/W
θJC
θJA
o
R
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
SYMBOL
TEST CONDITIONS
MIN
TYP
-
MAX
UNITS
o
I
T
= 25 C
-
-
-
-
-
9
36
2
A
A
SD
C
I
-
SDM
o
V
T = 25 C, I
J
= 18A, V
GS
= 0V, (Figure 12)
1.5
170
0.30
V
SD
SD
o
t
T = 25 C, I
= 9A, dI /dt = 100A/µs,
SD
-
ns
µC
rr
J
SD
V
= 30V
R
Q
-
RR
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4-24
BUZ72A
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
12
V
≥ 10V
GS
10
8
0.6
0.4
6
4
2
0.2
0
0
0
25
50
75
100
125
150
0
50
100
150
o
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.5
1
0.2
0.1
P
DM
0.05
0.02
0.01
0
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
+ T
J
DM
θJC C
0.01
10
-5
-4
-3
10
-2
10
-1
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
2
1
0
20
10
10
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 20V
10V
o
= MAX RATED, T = 25 C, SINGLE PULSE
GS
T
J
C
1.5µs
V
= 8.0V
GS
P
= 40W
o
D
15
10
5
V
= 7.5V
10µs
GS
T
= 25 C
J
V
= 7.0V
= 6.5V
= 6.0V
= 5.5V
GS
100µs
V
GS
1ms
OPERATION IN THIS
V
GS
AREA MAY BE LIMITED
10ms
100ms
DC
BY r
V
DS(ON)
GS
V
= 5.0V
= 4.5V
GS
V
GS
-1
V
= 4.0V
GS
10
0
0
1
2
3
10
10
10
10
0
4
8
12
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
4-25
BUZ72A
Typical Performance Curves Unless Otherwise Specified (Continued)
25
20
15
10
5
0.8
0.6
V
= 5V 5.5V 6V 6.5V 7V
7.5V 8V
PULSE DURATION = 80µs
GS
DUTY CYCLE = 0.5% MAX
o
V
= 25V, T = 25 C
J
DS
0.4
0.2
0
9V
10V
20V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0
5
10
I , DRAIN CURRENT (A)
15
20
0
5
10
V
, GATE TO SOURCE VOLTAGE (V)
GS
D
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.8
0.6
0.4
0.2
0
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 1mA
GS
DS
D
I
= 5A
D
V
= 10V
GS
3
2
1
0
-50
0
50
100
o
150
-50
0
50
100
o
150
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
1
5
10
PULSE DURATION = 80µs
V
= 0, f = 1MHz
GS
ISS
DUTY CYCLE = 0.5% MAX
C
C
C
= C
+ C
GS
= C
GD
o
V
= 25V, T = 25 C
J
DS
RSS
OSS
GD
= C
4
3
+ C
GS
DS
0
10
C
ISS
2
1
0
C
C
OSS
-1
10
10
RSS
-2
0
10
20
30
40
0
5
10
15
V
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
4-26
BUZ72A
Typical Performance Curves Unless Otherwise Specified (Continued)
2
1
0
15
10
5
10
10
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 14A
D
V
= 20V
DS
o
T
= 150 C
J
o
V
= 80V
T
= 25 C
DS
J
-1
10
0
0
5
10
15
20
25
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, SOURCE TO DRAIN VOLTAGE (V)
Q , GATE CHARGE (nC)
SD
g
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
V
I
DS
g(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORMS
4-27
BUZ72A
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4-28
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