CD4030BMS [INTERSIL]
CMOS Quad Exclusive-OR Gate; CMOS四路异或门
| 型号： | CD4030BMS |
| 厂家： | 
Intersil |
| 描述： | CMOS Quad Exclusive-OR Gate |
| 文件： | 总7页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CD4030BMS
CMOS Quad Exclusive-OR Gate
December 1992
Features
Pinout
CD4030BMS
TOP VIEW
• High Voltage Type (20V Rating)
• Medium-Speed Operation
- tPHL, tPLH = 65ns (typ) at VDD = 10V, CL = 50pF
A
B
1
2
3
4
5
6
7
14 VDD
• 100% Tested for Quiescent Current at 20V
• Standardized Symmetrical Output Characteristics
• 5V, 10V and 15V Parametric Ratings
13
12
H
G
J = A
K = C
B
• Maximum Input Current Of 1µA at 18V Over Full
Package-Temperature Range;
- 100nA at 18V and +25oC
D
11 M = G
10 L = E
H
C
F
D
9
8
F
E
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
VSS
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Functional Diagram
Applications
1
A
3
4
J
2
B
• Even and Odd-Parity Generators and Checkers
• Logical Comparators
5
6
C
K
L
• Adders/Subtractors
D
• General Logic Functions
8
10
11
E
9
F
Description
12
G
The CD4030BMS types consist of four independent Exclu-
sive-OR gates. The CD4030BMS provides the system
designer with a means for direct implementation of the
Exclusive-OR function.
M
13
H
The CD4030BMS is supplied in these 14-lead outline pack-
ages:
J = A
K = C
B
D
M = G
L = E
H
F
VSS = 7
Braze Seal DIP H4H
VDD = 14
Frit Seal DIP
H1B
Ceramic Flatpack H3W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 3305
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-317
Specifications CD4030BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Thermal Resistance . . . . . . . . . . . . . . . .
Ceramic DIP and FRIT Package . . . . . 80 C/W
Flatpack Package . . . . . . . . . . . . . . . . 70 C/W
θ
θ
jc
ja
o
o
20 C/W
o
o
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
20 C//W
o
Maximum Package Power Dissipation (PD) at +125 C
o
o
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
Package Types D, F, K, H
For TA = -55 C to +100 C (Package Type D, F, K) . . . . . . 500mW
o
o
For TA = +100 C to +125 C (Package Type D, F, K) . . . . .Derate
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
Linearity at 12mW/ C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265 C
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
o
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
MIN MAX UNITS
GROUP A
SUBGROUPS
PARAMETER
Supply Current
SYMBOL
CONDITIONS (NOTE 1)
TEMPERATURE
o
IDD
VDD = 20V, VIN = VDD or GND
1
+25 C
-
2
200
2
µA
µA
µA
nA
nA
nA
nA
nA
nA
mV
V
o
2
+125 C
-
o
VDD = 18V, VIN = VDD or GND
3
-55 C
-
o
Input Leakage Current
Input Leakage Current
IIL
VIN = VDD or GND
VIN = VDD or GND
VDD = 20
1
+25 C
-100
-
o
2
+125 C
-1000
-
o
VDD = 18V
VDD = 20
3
-55 C
-100
-
o
IIH
1
+25 C
-
-
-
-
100
1000
100
50
-
o
2
+125 C
o
VDD = 18V
3
-55 C
o
o
o
Output Voltage
VOL15 VDD = 15V, No Load
VOH15 VDD = 15V, No Load (Note 3)
1, 2, 3
+25 C, +125 C, -55 C
o
o
o
Output Voltage
1, 2, 3
+25 C, +125 C, -55 C 14.95
o
Output Current (Sink)
Output Current (Sink)
Output Current (Sink)
IOL5
IOL10
IOL15
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
1
+25 C
0.53
1.4
3.5
-
-
mA
mA
mA
mA
mA
mA
mA
V
o
1
+25 C
-
o
1
+25 C
-
o
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V
1
+25 C
-0.53
-1.8
-1.4
-3.5
-0.7
2.8
o
1
+25 C
-
o
1
+25 C
-
o
1
1
+25 C
-
o
N Threshold Voltage
P Threshold Voltage
Functional
VNTH
VPTH
F
VDD = 10V, ISS = -10µA
+25 C
-2.8
0.7
o
VSS = 0V, IDD = 10µA
1
+25 C
V
o
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V, VOH > 4.5V, VOL < 0.5V
7
+25 C
VOH > VOL <
VDD/2 VDD/2
V
o
7
+25 C
o
8A
8B
1, 2, 3
+125 C
o
-55 C
o
o
o
Input Voltage Low
(Note 2)
VIL
VIH
VIL
VIH
+25 C, +125 C, -55 C
-
1.5
V
V
V
V
o
o
o
Input Voltage High
(Note 2)
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C 3.5
-
4
-
o
o
o
Input Voltage Low
(Note 2)
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
+25 C, +125 C, -55 C
-
o
o
o
Input Voltage High
(Note 2)
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
+25 C, +125 C, -55 C
11
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. Foraccuracy, voltageismeasureddifferentiallytoVDD. Limit
implemented.
is 0.050V max.
2. Go/No Go test with limits applied to inputs.
7-318
Specifications CD4030BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
MIN
GROUP A
SUBGROUPS TEMPERATURE
PARAMETER
SYMBOL
CONDITIONS (NOTE 1, 2)
MAX
280
378
200
270
UNITS
ns
o
Propagation Delay
TPHL
TPLH
VDD = 5V, VIN = VDD or GND
9
+25 C
-
-
-
-
o
o
10, 11
9
+125 C, -55 C
ns
o
Transition Time
NOTES:
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
+25 C
ns
o
o
10, 11
+125 C, -55 C
ns
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
o
o
2. -55 C and +125 C limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
1
UNITS
µA
o
o
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55 C, +25 C
-
-
-
-
-
-
-
o
+125 C
30
2
µA
o
o
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
1, 2
1, 2
-55 C, +25 C
µA
o
+125 C
60
2
µA
o
o
-55 C, +25 C
µA
o
+125 C
120
50
µA
o
o
Output Voltage
Output Voltage
Output Voltage
Output Voltage
Output Current (Sink)
VOL
VOL
VOH
VOH
IOL5
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, No Load
VDD = 10V, No Load
VDD = 5V, VOUT = 0.4V
1, 2
1, 2
1, 2
1, 2
1, 2
+25 C, +125 C,
mV
o
-55 C
o
o
+25 C, +125 C,
-
50
-
mV
V
o
-55 C
o
o
+25 C, +125 C,
4.95
9.95
o
-55 C
o
o
+25 C, +125 C,
-
V
o
-55 C
o
+125 C
0.36
-
-
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
o
-55 C
0.64
o
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL10
IOL15
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
+125 C
0.9
-
o
-55 C
1.6
-
o
+125 C
2.4
-
o
-55 C
4.2
-
o
IOH5A VDD = 5V, VOUT = 4.6V
IOH5B VDD = 5V, VOUT = 2.5V
+125 C
-
-
-
-
-
-
-
-
-
-0.36
-0.64
-1.15
-2.0
-0.9
-1.6
-2.4
-4.2
3
o
-55 C
o
+125 C
o
-55 C
o
IOH10
IOH15
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
+125 C
o
-55 C
o
+125 C
o
-55 C
o
o
Input Voltage Low
Input Voltage High
Propagation Delay
VIL
VDD = 10V, VOH > 9V, VOL <
1V
1, 2
1, 2
+25 C, +125 C,
o
-55 C
o
o
VIH
VDD = 10V, VOH > 9V, VOL <
1V
+25 C, +125 C,
7
-
V
o
-55 C
o
TPHL
TPLH
VDD = 10V
VDD = 15V
1, 2, 3
1, 2, 3
+25 C
-
-
130
100
ns
ns
o
+25 C
7-319
Specifications CD4030BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Transition Time
SYMBOL
CONDITIONS
VDD = 10V
NOTES
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
MIN
MAX
100
80
UNITS
ns
o
TTHL
TTLH
+25 C
-
-
-
o
VDD = 15V
Any Input
+25 C
ns
o
Input Capacitance
NOTES:
CIN
+25 C
7.5
pF
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
NOTES
1, 4
TEMPERATURE
MIN
MAX
7.5
UNITS
o
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
+25 C
-
-2.8
-
µA
V
o
N Threshold Voltage
VNTH
∆VTN
1, 4
+25 C
-0.2
±1
o
N Threshold Voltage
Delta
1, 4
+25 C
V
o
P Threshold Voltage
VTP
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
1, 4
1, 4
+25 C
0.2
-
2.8
V
V
o
P Threshold Voltage
Delta
∆VTP
+25 C
±1
o
Functional
F
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
1
+25 C
VOH >
VDD/2
VOL <
VDD/2
V
o
Propagation Delay Time
TPHL
TPLH
1, 2, 3, 4
+25 C
-
1.35 x
ns
o
+25 C
Limit
o
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25 C limit.
4. Read and Record
O
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 C
PARAMETER
Supply Current - MSI-1
Output Current (Sink)
Output Current (Source)
SYMBOL
IDD
DELTA LIMIT
± 0.2µA
IOL5
± 20% x Pre-Test Reading
± 20% x Pre-Test Reading
IOH5A
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
Sample 5005
GROUP A SUBGROUPS
READ AND RECORD
IDD, IOL5, IOH5A
1, 7, 9
1, 7, 9
IDD, IOL5, IOH5A
IDD, IOL5, IOH5A
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
Interim Test 3 (Post Burn-In)
PDA (Note 1)
IDD, IOL5, IOH5A
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Final Test
Group A
7-320
Specifications CD4030BMS
TABLE 6. APPLICABLE SUBGROUPS (Continued)
MIL-STD-883
CONFORMANCE GROUP
METHOD
GROUP A SUBGROUPS
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
READ AND RECORD
Group B
Subgroup B-5
Subgroup B-6
Sample 5005
Sample 5005
Sample 5005
Subgroups 1, 2, 3, 9, 10, 11
Group D
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
MIL-STD-883
METHOD
CONFORMANCE GROUPS
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
Group E Subgroup 2
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1
Note 1
3, 4, 10, 11
1, 2, 5 - 9, 12, 13
14
Static Burn-In 2
Note 1
3, 4, 10, 11
-
7
7
7
1, 2, 5, 6, 8, 9,
12 - 14
Dynamic Burn-
In Note 1
14
3, 4, 10, 11
2, 6, 9, 13
1, 5, 8, 12
Irradiation
Note 2
3, 4, 10, 11
1, 2, 5, 6, 8, 9,
12 - 14
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V ± 0.5V
Schematic Diagram
VDD
TRUTH TABLE FOR 1 OF 4
VDD
INDENTICAL GATES
A
B
0
0
1
1
J
0
1
1
0
p
n
B*
0
p
2(5, 9, 12)
1
n
0
p
n
p
1
p
J
VSS
VDD
1 = High Level
0 = Low Level
3(4, 10, 11)
n
p
A*
1(6, 8, 13)
n
VSS
VDD
VSS
*INPUTS PROTECTED
BY CMOS PROTECTION
NETWORK
VSS
FIGURE 1. 1 OF 4 IDENTICAL GATES
7-321
CD4030BMS
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC
15.0
30
25
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
7.5
20
15
10V
10V
5.0
10
5
2.5
5V
5V
0
5
10
15
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
0
-15
-10
-5
0
0
0
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
-5
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
-10
-15
-20
-25
-30
-5
-10V
-10V
-10
-15
-15V
-15V
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC
300
200
SUPPLY VOLTAGE (VDD) = 5V
150
200
100
SUPPLY VOLTAGE (VDD) = 5V
100
10V
15V
10V
15V
50
0
0
20
40
60
80
100
0
20
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE 6. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
FIGURE 7. TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF LOAD CAPACITANCE
7-322
CD4030BMS
Typical Performance Characteristics (Continued)
105
AMBIENT TEMPERATURE (TA) = +25oC
6
4
2
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) = 50pF
104
6
4
2
SUPPLY VOLTAGE
(VDD) = 15V
300
103
6
4
2
102
200
6
4
2
10V
10V
5V
10
6
4
2
100
LOAD CAPACITANCE
CL = 50pF
1
6
4
2
CL = 15pF
10-1
2
4
6 8
103
2
4
6 8
104
2
4
6 8
2
4
6 8
10
2
4
6 8
102
0
5
10
15
20
10-1
1
SUPPLY VOLTAGE (VDD) (V)
INPUT FREQUENCY (fI) (kHz)
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNC-
TION OF SUPPLY VOLTAGE
FIGURE 9. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF INPUT FREQUENCY
Chip Dimensions and Pad Layout
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
METALLIZATION: Thickness: 11kÅ − 14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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323
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