HA-2548/883 [INTERSIL]
Precision, High Slew Rate, Wideband Operational Amplifier; 高精度，高转换率，宽带运算放大器
| 型号： | HA-2548/883 |
| 厂家： | 
Intersil |
| 描述： | Precision, High Slew Rate, Wideband Operational Amplifier |
| 文件： | 总7页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA-2548/883
Precision, High Slew Rate,
Wideband Operational Amplifier
July 1997
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HA-2548/883 is a monolithic op amp that offers a unique
883 and is Fully Conformant Under the Provisions of combination of bandwidth, slew rate, and precision specifica-
Paragraph 1.2.1.
tions. These features can eliminate the need for composite
op amp designs and external calibration circuitry.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . 120V/µs (Typ)
Optimized for gains ≥5, the HA-2548/883 has a gain band-
width product of 150MHz (typ) and a slew rate of 120V/µs
(typ) while maintaining an extremely high open loop gain of
130dB (typ) and a low offset voltage of 300µV (typ). These
specifications are achieved through uniquely designed input
circuitry and a single ultra-high gain stage that minimizes the
AC signal path. Capable of delivering over 30mA (min) of
output current, the HA-2548/883 is ideal for precision, high
speed applications such as signal conditioning, instrumenta-
tion, video/pulse amplifiers and buffers.
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . 300µV (Typ)
900µV (Max)
• High Open Loop Gain . . . . . . . . . . . . . . . . .130dB (Typ)
114dB (Min)
• Gain Bandwidth Product. . . . . . . . . . . . . 150MHz (Typ)
• Low Voltage Noise at 1kHz . . . . . . . . . .8.3nV/√Hz (Typ)
• Minimum Gain Stability . . . . . . . . . . . . . . . . . . .≥ 5 (Typ)
Applications
Ordering Information
• High Speed Instrumentation
• Data Acquisition Systems
• Analog Signal Conditioning
• Precision, Wideband Amplifiers
• Pulse/RF Amplifiers
TEMP.
PKG.
NO.
o
PART NUMBER RANGE ( C)
PACKAGE
HA2-2548/883 -55 to 125 8 Pin Can
T8.C
Pinout
HA-2548/883
(METAL CAN)
TOP VIEW
COMP
8
1
3
7
5
+BAL
V+
6
-
+
2
-IN
OUT
-BAL
+IN
4
V -
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 511069-883
File Number 2472.2
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HA-2548/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current (< 10% Duty Cycle). . . . . . . . . . . . . . . . .60mA
Continuous Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . .40mA
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Resistance (Typical, Note 1)
θ
o
θ
JC
JA
o
Metal Can Package . . . . . . . . . . . . . . . 142 C/W
Package Power Dissipation Limit at 75 C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.70W
Package Power Dissipation Derating Factor Above 75 C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . .7.0mW/ C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 175 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
66 C/W
o
o
o
o
o
o
Operating Conditions
o
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
V
R
≤ 1/2 (V+ - V-)
INCM
≥ 1kΩ
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ is measured with the component mounted on an evaluation PC board in free air.
JA
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
= ±15V, R
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
LOAD
GROUP A
SUBGROUPS
o
PARAMETERS
SYMBOL
CONDITIONS
TEMP. ( C)
MIN
-900
-1200
-50
MAX
900
1200
50
UNITS
µV
Input Offset Voltage
V
V
V
= 0V
1
25
IO
CM
2, 3
1
125, -55
25
µV
Input Bias Current
+I
= 0V,
nA
B
CM
+R = 100.1kΩ,
S
2, 3
125, -55
-100
100
nA
-R = 100Ω
S
-I
V
= 0V,
1
25
-50
50
nA
nA
B
CM
+R = 100Ω,
S
2, 3
125, -55
-100
100
-R = 100.1kΩ
S
Input Offset Current
I
V
= 0V,
1
25
-50
50
nA
nA
IO
CM
+R = 100.1kΩ,
S
2, 3
125, -55
-100
100
-R = 100.1kΩ
S
Common Mode Range
+CMR
-CMR
V+ = +8V, V- = -22V
V+ = +22V, V- = -8V
1
2, 3
1
25
125, -55
25
7
7
-
-
V
V
-
-7
-7
-
V
2, 3
4
125, -55
25
-
V
Large Signal Voltage
Gain
+A
VOL
V
R
=0Vand+10V,
114
108
114
108
80
80
dB
dB
dB
dB
dB
dB
OUT
= 1kΩ
L
5, 6
4
125, -55
25
-
-A
VOL
V
= 0V and -10V,
-
OUT
R
= 1kΩ
L
5, 6
1
125, -55
25
-
Common Mode
Rejection Ratio
+CMRR
-CMRR
∆V
= +2V,
-
CM
V+ = +13V, V- = -17V,
2, 3
125, -55
-
V
= -2V
OUT
∆V
CM
= -2V,
1
25
80
80
-
-
dB
dB
V+ = +17V, V- = -13V,
2, 3
125, -55
V
= 2V
OUT
Spec Number 511069-883
2
HA-2548/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
= ±15V, R
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
LOAD
GROUP A
SUBGROUPS
o
PARAMETERS
SYMBOL
CONDITIONS
TEMP. ( C)
MIN
11
11
-
MAX
UNITS
V
Output Voltage Swing
+V
R
R
= 1kΩ
4
5, 6
4
25
-
-
OUT
OUT
OUT
OUT
L
L
125, -55
25
V
-V
= 1kΩ
-11
-11
-
V
5, 6
4
125, -55
25
-
V
Output Current
+I
V
= +10V
= -10V
30
30
-
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
OUT
5, 6
4
125, -55
25
-
-I
V
-30
-30
18
18
-
OUT
5, 6
1
125, -55
25
-
Quiescent Power Supply
Current
+I
V
I
= 0V,
= 0mA
-
CC
OUT
OUT
2, 3
1
125, -55
25
-
-I
V
I
= 0V,
-18
-18
86
86
CC
OUT
= 0mA
OUT
2, 3
1
125, -55
25
-
Power Supply
Rejection Ratio
+PSRR
-PSRR
∆V
SUP
= 10V,
-
V+ = +10V, V- = -15V,
V+ = +20V, V- = -15V
2, 3
125, -55
-
∆V
SUP
= 10V,
1
25
86
86
-
-
dB
dB
V+ = +15V, V- = -10V,
V+ = +15V, V- = -20V
2, 3
125, -55
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Characteristics in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
= ±15V, R
= 1kΩ, C
LOAD LOAD
≤ 10pF, Unless Otherwise Specified.
SUPPLY
o
PARAMETERS
SYMBOL
TC
CONDITIONS
= 0V
CM
NOTES
TEMP. ( C)
MIN
MAX
UNITS
o
Average Offset Voltage Drift
Offset Voltage Adjust
V
V
2
2, 6
2
-55 to 125
-
1
7
µV/ C
IO
V
Adj
25
-
mV
nV/√Hz
pA/√Hz
MHz
IO
Input Noise Voltage Density
Input Noise Current Density
Gain Bandwidth Product
E
R
R
= 10Ω, f = 1kHz
25
25
-
13.0
S
O
N
I
= 500Ω, f = 1kHz
2
-
1.0
S
O
N
GBWP
V
= 1.0V, f = 1MHz
2
25
-
130
O
O
2
-55 to 125
25
-
110
MHz
Slew Rate
+SR
V
= -5V to +5V
= +5V to -5V
2
80
70
80
70
1.11
-
-
-
-
-
V/µs
OUT
2
-55 to 125
25
V/µs
-SR
V
2
V/µs
OUT
2
-55 to 125
25
V/µs
Full Power Bandwidth
FPBW
V
= 10V
2, 3
MHz
PEAK
Spec Number 511069-883
3
HA-2548/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
= ±15V, R
= 1kΩ, C
LOAD LOAD
≤ 10pF, Unless Otherwise Specified.
SUPPLY
o
PARAMETERS
SYMBOL
CLSG
CONDITIONS
= 1kΩ, C = 10pF
NOTES
TEMP. ( C)
MIN
MAX
UNITS
Minimum Closed Loop
Stable Gain
R
2
-55 to 125
5
-
V/V
L
L
Rise and Fall Time
t
V
= -100mV
2, 5
2, 5
2, 5
2, 5
2
25
-55 to 125
25
-
-
-
-
-
-
-
-
-
15
20
15
20
30
35
30
35
260
ns
ns
ns
ns
%
r
OUT
to +100mV
t
V
= +100mV
f
OUT
to -100mV
-55 to 125
25
Overshoot
+OS
-OS
V
= -100mV
OUT
to +100mV
2
-55 to 125
25
%
V
= +100mV
2
%
OUT
to -100mV
2
-55 to 125
25
%
Settling Time
Power Consumption
NOTES:
t
To 0.01% for a 10V
Step
2
ns
S
PC
V
= 0V,
= 0mA
2, 4
-55 to 125
-
540
mW
OUT
I
OUT
2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
3. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
4. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
5. Measured between 10% and 90% points.
).
PEAK
6. Offset adjustment range is [V (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment
IO
through 0V.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLE 1)
1
1 (Note 7), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Groups C and D Endpoints
NOTE:
7. PDA applies to Subgroup 1 only.
Spec Number 511069-883
4
HA-2548/883
Die Characteristics
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY:
4
2
85 mils x 91 mils x 19 mils
3.6 x 10 A/cm
2160µm x 2320µm x 483µm
SUBSTRATE POTENTIAL (Powered Up): V- (Note)
TRANSISTOR COUNT: 60
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
PROCESS: Bipolar, Dielectric Isolation
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
NOTE: The Substrate may be left floating (Insulating Die Mount) or it may be mounted on a conductor at a V- potential.
Metallization Mask Layout
HA-2548/883
+BAL
COMP
V+
-IN
OUT
+IN
V-
-BAL
Spec Number 511069-883
5
HA-2548/883
Burn-In Circuit
HA2-2548/883 METAL CAN
R
3
8
V+
1
3
7
5
C
D
1
1
-
2
6
+
4
R
R
1
2
V-
C
D
2
2
NOTES:
R
R
R
C
C
D
= 1kΩ, ±5%, 1/4W (Min)
= 1kΩ, ±5%, 1/4W (Min)
= 10kΩ, ±5%, 1/4W (Min)
= 0.01µF/Socket or 0.1µF/Row
= 0.01µF/Socket or 0.1µF/Row
1
2
3
1
2
1
= D = 1N4002 or Equivalent/Board
2
|(V+) - (V-)| = 31V ±1V
Spec Number 511069-883
6
HA-2548/883
Metal Can Packages (Can)
T8.C MIL-STD-1835 MACY1-X8 (A1)
REFERENCE PLANE
8 LEAD METAL CAN PACKAGE
A
e1
L
INCHES
MILLIMETERS
L2
L1
SYMBOL
A
MIN
MAX
0.185
0.019
0.021
0.024
0.375
0.335
0.160
MIN
4.19
0.41
0.41
0.41
8.51
7.75
2.79
MAX
4.70
0.48
0.53
0.61
9.40
8.51
4.06
NOTES
ØD2
0.165
0.016
0.016
0.016
0.335
0.305
0.110
-
A
A
Øb
Øb1
Øb2
ØD
ØD1
ØD2
e
1
1
k1
Øe
ØD ØD1
-
2
N
1
-
-
Øb1
β
α
C
-
L
Øb
k
F
0.200 BSC
0.100 BSC
5.08 BSC
2.54 BSC
-
BASE AND
Q
e1
-
SEATING PLANE
F
-
0.040
0.034
0.045
0.750
0.050
-
-
1.02
0.86
1.14
19.05
1.27
-
-
BASE METAL
LEAD FINISH
Øb2
k
0.027
0.027
0.500
-
0.69
0.69
12.70
-
-
k1
2
Øb1
L
1
L1
1
SECTION A-A
L2
0.250
0.010
6.35
0.25
1
Q
0.045
1.14
-
NOTES:
o
o
45 BSC
45 BSC
3
α
β
1. (All leads) Øb applies between L1 and L2. Øb1 applies between
L2 and 0.500 from the reference plane. Diameter is uncontrolled
in L1 and beyond 0.500 from the reference plane.
o
o
45 BSC
45 BSC
3
4
N
8
8
2. Measured from maximum diameter of the product.
Rev. 0 5/18/94
3. α is the basic spacing from the centerline of the tab to terminal 1
and β is the basic spacing of each lead or lead position (N -1
places) from α, looking at the bottom of the package.
4. N is the maximum number of terminal positions.
5. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
6. Controlling dimension: INCH.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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TEL: (321) 724-7000
FAX: (321) 724-7240
Spec Number 511069-883
7
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