HA-5222_01 [INTERSIL]
Dual, Low Noise, Wideband, Precision Operational Amplifier; 双通道，低噪声，宽带，精密运算放大器
| 型号： | HA-5222_01 |
| 厂家： | 
Intersil |
| 描述： | Dual, Low Noise, Wideband, Precision Operational Amplifier |
| 文件： | 总8页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
HA-5222/883
Dual, Low Noise, Wideband,
Precision Operational Amplifier
September 2001
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HA-5222/883 is a dual, high performance, dielectrically
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
isolated, monolithic op amp, featuring precision DC charac-
teristics while providing excellent AC characteristics.
Designed for audio, video, and other demanding applica-
tions, noise (3.3nV/√Hz at 1kHz typ), total harmonic distor-
tion (<0.005% typ), and DC errors are kept to a minimum.
itle
A-
22/
3)
b-
t
• Gain Bandwidth Product. . . . . . . . . . . . . .100MHz (Min)
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . .30MHz (Min)
40MHz (Typ)
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset cur-
rents (15nA typ), and high open loop gain (128dB typ). The
combination of these excellent DC characteristics with fast
settling time (0.4µs typ) make the HA-5222/883 ideally
suited for precision signal conditioning.
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . .25V/µs (Min)
37V/µs (Typ)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . .0.75mV (Max)
0.30mV (Typ)
ual,
w
• High Open Loop Gain . . . . . . . . . . . . . . . . . 106dB (Min)
128dB (Typ)
ise,
de-
nd,
ci-
n
era
nal
pli-
r)
The unique design of the HA-5222/883 gives this device out-
standing AC characteristics, including high unity gain band-
width (40MHz typ) and high slew rate (37V/µs typ), not
normally associated with precision op amps. Other key spec-
ifications include high CMRR (95dB typ) and high PSRR
• Channel Separation (at 10kHz) . . . . . . . . . . 110dB (Typ)
• Low Voltage Noise (at 1kHz) . . . . . . . . .5.9nV/√Hz (Max)
3.3nV/√Hz (Typ)
• Low Current Noise (at 1kHz). . . . . . . . 2.7pA/√Hz (Max) (100dB typ). The combination of these specifications will
1.3pA/√Hz (Typ)
allow the HA-5222/883 to be used in RF signal conditioning
as well as video amplifiers.
• High Output Current . . . . . . . . . . . . . . . . . 30mA (Min)
56mA (Typ)
• Low Supply Current (per Op Amp.) . . . . . . 10mA (Max)
8mA (Typ)
Part Number Information
PART
NUMBER
TEMPERATURE
RANGE
thor
PACKAGE
Applications
-55oC to +125oC
8 Lead CerDIP
• Precision Test Systems
• Active Filtering
HA7-5222/883
ey-
rds
ter-
• Small Signal Video
• Accurate Signal Processing
• RF Signal Conditioning
rpo-
ion,
mi-
n-
Pinout
HA-5222/883
ctor,
li-
(CERDIP)
TOP VIEW
y,
OUT1
-IN1
+IN1
V-
1
2
3
4
8
7
6
5
V+
al,
w
OUT2
-IN2
+IN2
1
ise,
de-
nd,
ci-
n
-
+
2
-
+
era
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc.
Spec Number 511062-883
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
1
File Number 3717.2
Specifications HA-5222/883
Absolute Maximum Ratings
Thermal Information (Typical)
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . .
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Package Power Dissipation Limit at +75oC
96oC/W
16oC/W
Peak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . .100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.04W
Package Power Dissipation Derating Factor Above +75oC
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 5V to 15V
VINCM ≤ 1/2 (V+ - V-)
RL ≥ 1kΩ
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY
=
15V, RLOAD = 1kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
MIN
GROUP A
SUBGROUPS TEMPERATURE
PARAMETERS
SYMBOL
CONDITIONS
VCM = 0V
MAX
0.75
1.5
UNITS
mV
Input Offset Voltage
VIO
1
+25oC
+125oC, -55oC
+25oC
-0.75
-1.5
-80
2, 3
1
mV
Input Bias Current
+IB
VCM = 0V,
80
nA
+RS = 100.1kΩ,
-RS = 100Ω
2, 3
+125oC, -55oC
-200
200
nA
-IB
VCM = 0V, +RS = 100Ω,
-RS = 100.1kΩ
1
+25oC
+125oC, -55oC
+25oC
-80
-200
-50
80
200
50
nA
nA
nA
nA
2, 3
1
Input Offset Current
IIO
VCM = 0V,
+RS = 100.1kΩ,
-RS = 100.1kΩ
2, 3
+125oC, -55oC
-150
150
Common Mode Range
+CMR
-CMR
V+ = +3V, V- = -27V
V+ = +27V, V- = -3V
VOUT = 0V and +10V
VOUT = 0V and -10V
1
2, 3
1
+25oC
+125oC, -55oC
+25oC
12
12
-
-
V
V
-
-12
V
2, 3
4
+125oC, -55oC
+25oC
-
-12
V
Large Signal Voltage
Gain
+AVOL
106
100
106
100
88
86
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
5, 6
4
+125oC, -55oC
+25oC
-AVOL
5, 6
1
+125oC, -55oC
+25oC
Common Mode
Rejection Ratio
+CMRR
∆VCM = +10V,
V+ = +5V, V- = -25V,
2, 3
+125oC, -55oC
VOUT = -10V
-CMRR
∆VCM = -10V,
1
+25oC
88
86
-
-
dB
dB
V+ = +25V, V- = -5V,
2, 3
+125oC, -55oC
VOUT = +10V
Output Voltage Swing
+VOUT
RL = 1kΩ
4
+25oC
+125oC, -55oC
+25oC
12.0
-
V
V
V
V
5, 6
4
11.5
-
-VOUT
RL = 1kΩ
-
-
-12.0
-11.5
5, 6
+125oC, -55oC
Spec Number 511062-883
2
Specifications HA-5222/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY
=
15V, RLOAD = 1kΩ, VOUT = 0V, Unless Otherwise Specified.
LIMITS
GROUP A
PARAMETERS
SYMBOL
CONDITIONS
SUBGROUPS TEMPERATURE
MIN
MAX
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
Output Current
+IOUT
VOUT = +10V, RL = 1kΩ
4
5, 6
4
+25oC
+125oC, -55oC
+25oC
30
30
-
-
-
-IOUT
VOUT = -10V, RL = 1kΩ
VOUT = 0V, IOUT = 0mA
VOUT = 0V, IOUT = 0mA
-30
-30
20
22
-
5, 6
1
+125oC, -55oC
+25oC
-
Quiescent Power Supply
Current
+ICC
-
2, 3
1
+125oC, -55oC
+25oC
-
-ICC
-20
-22
90
86
2, 3
1
+125oC, -55oC
+25oC
-
Power Supply
Rejection Ratio
+PSRR
∆VSUP = 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
-
2, 3
+125oC, -55oC
-
dB
-PSRR
∆VSUP = 10V,
1
+25oC
90
86
-
-
dB
dB
V+ = +15V, V- = -20V,
2, 3
+125oC, -55oC
V+ = +15V, V- = -10V
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC
= 15V, RLOAD = 1kΩ, Unless Otherwise Specified.
Device Characterized at: VSUPPLY
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
1, 5
1, 5
1, 5
1, 5
1, 5
1, 5
1
TEMPERATURE
+25oC
MIN
MAX
16.0
6.6
5.9
24.0
6.6
2.7
-
UNITS
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
Input Noise Voltage
Density
EN
RS = 0Ω, fO = 10Hz
RS = 0Ω, fO = 100Hz
RS = 0Ω, fO = 1kHz
RS = 500kΩ, fO = 10Hz
RS = 500kΩ, fO = 100Hz
RS = 500kΩ, fO = 1kHz
-
-
+25oC
+25oC
-
Input Noise Current
Density
IN
+25oC
-
+25oC
-
+25oC
-
Gain Bandwidth Product
Unity Gain Bandwidth
GBWP
UGBW
VOUT = 200mVP-P
,
+25oC
100
88
30
25
25
fO = 100kHz
-55oC to +125oC
+25oC
-
MHz
VOUT = 200mV
1
-
MHz
-55oC to +125oC
-55oC to +125oC
-
MHz
Slew Rate
SR
VOUT
=
2.5V,
1
-
V/µs
CL = 50pF
Full Power Bandwidth
FPBW
VPEAK = 10V
1, 2
-55oC to +125oC
398
-
kHz
Spec Number 511062-883
3
Specifications HA-5222/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC (Continued)
Device Characterized at: VSUPPLY
= 15V, RLOAD = 1kΩ, Unless Otherwise Specified.
LIMITS
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
Minimum Closed Loop
Stable Gain
CLSG
RL = 1kΩ, CL = 50pF
1
-55oC to +125oC
1
-
V/V
Rise and Fall Time
tR, tF
VOUT
=
=
100mV
100mV
1, 4
1
+25oC
-
-
-
-
-
20
35
ns
ns
-55oC to +125oC
+25oC
Overshoot
OS
VOUT
25
%
-55oC to +125oC
-55oC to +125oC
30
%
Power Consumption
NOTES:
PC
VOUT = 0V, IOUT
0mA
=
1, 3
660
mW
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511062-883
4
HA-5222/883
Die Characteristics
DIE DIMENSIONS:
78 x 185 x 19 mils 1 mils
1980 x 4690 x 483µm 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2 5% Phos.)
Silox Thickness: 12kÅ 2kÅ
Nitride Thickness: 3.5kÅ 1.5kÅ
WORST CASE CURRENT DENSITY:
4
2
4.2 x 10 A/cm
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 128
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5222/883
OUT1
V+
-IN1
+IN1
V-
OUT2
-IN2
+IN2
Spec Number 511062-883
5
HA-5222
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves Unless Otherwise Specified: TA = +25oC, VSUPPLY
=
15V
SUPPLY CURRENT/AMPLIFIER vs TEMPERATURE
CHANNEL SEPARATION vs FREQUENCY
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: Supply Voltage = 15V, RL = 1kΩ, CL = 50pF, Unless Otherwise Specified
PARAMETERS
Input Offset Voltage
CONDITIONS
See Table 1
TEMPERATURE
+25oC
Full
TYPICAL
0.30
0.35
0.50
40
UNITS
mV
mV
Average Offset Voltage Drift
Input Bias Current
See Table 1
See Table 1
Full
µV/oC
nA
+25oC
Full
70
nA
Input Offset Current
See Table 1
See Table 1
+25oC
Full
15
nA
30
nA
Differential Input Resistance
Input Noise Voltage
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
Full
70
kΩ
fO = 0.1Hz to 10Hz
0.33
6.4
µVP-P
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
%
Input Noise Voltage Density
fO = 10Hz
fO = 100Hz
fO = 1kHz
fO = 10Hz
fO = 100Hz
fO = 1kHz
See Note 1
3.7
3.3
Input Noise Current Density
8
2.7
1.3
THD & N
0.005
128
120
Large Signal Voltage Gain
V
OUT = 0V to 10V
dB
dB
Spec Number 511062-883
6
HA-5222
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application
and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: Supply Voltage = 15V, RL = 1kΩ, CL = 50pF, Unless Otherwise Specified
PARAMETERS
Common Mode Rejection Ratio
Unity Gain Bandwidth
CONDITIONS
TEMPERATURE
Full
TYPICAL
95
UNITS
dB
∆VCM
=
10V
-3dB
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
Full
40
MHz
MHz
MHz
MHz
MHz
MHz
V/V
V
33
50
Gain Bandwidth Product
1kHz to 400kHz
140
115
160
1
Minimum Gain Stability
Output Voltage Swing
RL = 333Ω
Full
110
112.5
112.1
156
10
RL = 1K
+25oC
Full
V
V
Output Current
VOUT
=
10V
Full
mA
V
Output Resistance
Full Power Bandwidth
+25oC
+25oC
FPBW = SR/2πVPEAK
,
398
kHz
V
PEAK = 10V
Channel Separation
Slew Rate
f
O = 10kHz
+25oC
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
+25oC
+125oC
-55oC
+25oC
+25oC
Full
110
37
39
36
16
17
17
12
11
dB
VOUT
VOUT
VOUT
=
=
=
2.5V
V/µs
V/µs
V/µs
Rise Time
100mV
100mV
ns
ns
ns
Overshoot
Settling Time
%
%
12
0.4
1.5
100
8
%
10VSTEP, AV = -1
0.1%
µs
0.01%
µs
dB
Power Supply Rejection Ratio
Supply Current
∆VS
= 10V to 20V
Quiescent, VOUT = 0V,
Full
mA/Op Amp
IOUT = 0mA
Minimum Supply Voltage
NOTE:
Functional Operation Only.
Other Parameters May Vary.
+25oC
15
V
1. AVCL = 10, fO = 1kHz, VOUT = 5Vrms, RL = 600Ω, 10Hz to 100kHz, Minimum resolution of test equipment is 0.005%.
Spec Number 511062-883
7
HA-5222
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number 511062-883
8
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