HA1-2839-5 [INTERSIL]
600MHz, Very High Slew Rate Operational Amplifier; 600MHz的，非常高转换率运算放大器
| 型号： | HA1-2839-5 |
| 厂家： | 
Intersil |
| 描述： | 600MHz, Very High Slew Rate Operational Amplifier |
| 文件： | 总12页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA-2839/883
Very High Slew Rate,
Wideband Operational Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD- The HA-2839/883 is a wideband, very high slew rate, opera-
883 and is Fully Conformant Under the Provisions of tional amplifier featuring superior speed and bandwidth
Paragraph 1.2.1.
characteristics. It also features trimmed supply current,
which minimizes supply current (and thus A.C. parameter)
variation over process and temperature extremes. For exam-
ple, the ICC variation over the entire military temperature
range is typically less than 0.5mA. Bipolar construction, cou-
pled with dielectric isolation, delivers outstanding perfor-
mance in circuits with closed loop gains ≥10.
• Supply Current. . . . . . . . . . . . . . . . . . . . . 15.0mA (Max)
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . 2.0mV (Max)
• Very High Slew Rate . . . . . . . . . . . . . . . . 600V/µs (Typ)
• Open Loop Gain. . . . . . . . . . . . . . . . . . . . . 20kV/V (Min)
• Wide Gain-Bandwidth (AV ≥ 10) . . . . . . . 600MHz (Typ)
• Input Noise Voltage at 1kHz . . . . . . . . . . 6nV/√Hz (Typ)
• Enhanced Replacement for HA-2539/883 and EL2039
The 600V/µs slew rate, and 600MHz gain bandwidth product
ensure high performance in video and wideband amplifier
designs. Differential gain and phase are a low 0.03% and
0.03 degrees, respectively, making the HA-2839/883 ideal
for video applications. A full ±10V output swing, high open
loop gain, and outstanding A.C. parameters make
the HA-2839/883 an excellent choice for data acquisition
systems.
Applications
• Pulse and Video Amplifiers
• Wideband Amplifiers
Ordering Information
• RF/IF Signal Processing
• High Speed Sample-Hold Circuits
• Fast, Precise D/A Converters
• RF Oscillators
PART
NUMBER
TEMPERATURE
RANGE
PACKAGE
o
o
HA1-2839/883
-55 C to +125 C
14 Lead CerDIP
Pinout
HA-2839/883
(CERDIP)
TOP VIEW
+IN
NC
V-
1
2
3
4
5
6
7
14 -IN
13 NC
12 NC
11 NC
10 V+
+ -
NC
NC
NC
NC
9
8
NC
OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 511089-883
File Number 3593.1
http://www.intersil.com | Copyright © Intersil Corporation 1999
3-53
Specifications HA-2839/883
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Package Power Dissipation Limit at +75 C for T ≤ +175 C
Thermal Resistance
14 Lead CerDIP Package . . . . . . . . . . . .
θ
θ
JC
26 C/W
JA
o
o
81 C/W
o
o
J
Peak Output Current (≤ 10% Duty Cycle). . . . . . . . . . . . . . . . .50mA
14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . 1.23W
o
o
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
Package Power Dissipation Derating Factor Above +75 C
J
o
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10 seconds) . . . . . . . . . . . . . +300 C
14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . .12.3mW/ C
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
V
≤ 1/2 (V+ - V-)
INCM
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V R ≥ 1kΩ
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
= ±15V, R = 100Ω, R = 100kΩ, V = 0V, Unless Otherwise Specified.
Device Tested at: V
SUPPLY
SOURCE
LOAD
OUT
LIMITS
GROUP A
DC PARAMETERS
SYMBOL
CONDITIONS
VCM = 0V
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
mV
mV
µA
o
Input Offset Voltage
VIO
1
2, 3
1
+25 C
-2
-6
2
o
o
+125 C, -55 C
6
o
Input Bias Current
+I
V
= 0V, +R = 1.1kΩ
+25 C
-14.5
-20
-14.5
-20
-4
14.5
B
CM
S
-R = 100Ω
S
o
o
2, 3
1
+125 C, -55 C
20
µA
o
-I
V
= 0V, +R = 100Ω
+25 C
14.5
µA
B
CM
S
-R = 1.1kΩ
S
o
o
2, 3
1
+125 C, -55 C
20
µA
o
Input Offset Current
I
V
= 0V, +R = 1.1kΩ
+25 C
4
µA
IO
CM
S
-R = 1.1kΩ
S
o
o
2, 3
1
+125 C, -55 C
-8
8
µA
o
Common Mode Range
+CMR
-CMR
V+ = 5V
+25 C
10
10
-
-
V
V- = -25V
o
o
2, 3
1
+125 C, -55 C
-
V
o
V+ = 25V
V- = -5V
+25 C
-10
V
o
o
2, 3
4
+125 C, -55 C
-
-10
V
o
Large Signal Voltage
Gain
+A
V
= 0V and +10V
OUT
+25 C
20
10
20
10
75
75
75
75
-
-
-
-
-
-
-
-
kV/V
kV/V
kV/V
kV/V
dB
VOL
R = 1kΩ
L
o
o
5, 6
4
+125 C, -55 C
o
-A
V
= 0V and -10V
OUT
+25 C
VOL
R = 1kΩ
L
o
o
5, 6
1
+125 C, -55 C
o
Common Mode
Rejection Ratio
+CMRR
∆V
= 10V,
= -10V
+25 C
CM
V
OUT
o
o
V+ = 5V, V- = -25V
2,3
1
+125 C, -55 C
dB
o
-CMRR
∆V
= -10V,
= 10V
+25 C
dB
CM
V
OUT
o
o
V+ = 25V, V- = -5V
2, 3
+125 C, -55 C
dB
Spec Number 511089-883
3-54
Specifications HA-2839/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
= ±15V, R
= 100Ω, R
= 100kΩ, V
= 0V, Unless Otherwise Specified.
OUT
SUPPLY
SOURCE
LOAD
LIMITS
GROUP A
DC PARAMETERS
SYMBOL
CONDITIONS
R = 1kΩ
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
V
o
Output Voltage Swing
+V
1
2, 3
1
+25 C
10
10
-
-
OUT
OUT
OUT
OUT
L
o
o
+125 C, -55 C
-
V
o
-V
R = 1kΩ
+25 C
-10
V
L
o
o
2, 3
1
+125 C, -55 C
-
-10
V
o
Output Current
+I
V
V
V
= 10V
= -10V
= 0V
+25 C
10
10
-
-
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
OUT
OUT
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
-I
+25 C
-10
o
o
2, 3
1
+125 C, -55 C
-
-10
o
Quiescent Power
Supply Current
+I
+25 C
-
14.6
CC
CC
I
= 0mA
OUT
o
o
2, 3
1
+125 C, -55 C
-
15
-
o
-I
V
= 0V
+25 C
-14.6
-15
75
75
75
75
OUT
I
= 0mA
OUT
o
o
2, 3
1
+125 C, -55 C
-
o
Power Supply
Rejection Ratio
+PSRR
-PSRR
∆V
= 10V
+25 C
-
SUP
V+ = 10V, V- = -15V
V+ = 20V, V- = -15V
o
o
2, 3
1
+125 C, -55 C
-
o
∆V
= 10V
+25 C
-
SUP
V+ = 15V, V- = -10V
V+ = 15V, V- = -20V
o
o
2, 3
+125 C, -55 C
-
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3
Spec Number 511089-883
3-55
Specifications HA-2839/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
= ±15V, R
= 50Ω, R
= 1kΩ, C ≤10pF, A = +10V/V, Unless Otherwise Specified.
SUPPLY
SOURCE
LOAD
L
V
LIMITS
PARAMETERS
SYMBOL
GBWP
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
MHz
o
Gain Bandwidth
Product
V
V
= 200mV, f = 5MHz
1
1
+25 C
500
450
-
-
O
O
O
o
= 200mV,
+25 C
MHz
f
= 45MHz
O
o
Slew Rate
+SR
-SR
V
V
V
V
V
= -5V to +5V
= +5V to -5V
1, 4
1, 4
1, 2
1, 4
1, 4
1
+25 C
550
500
8.0
-
-
-
V/µs
V/µs
MHz
ns
O
o
+25 C
O
o
Full Power Bandwidth
Rise and Fall Time
FPBW
= 10V
+25 C
-
PEAK
o
T
= 0V to +200mV
= 0V to -200mV
+25 C
10
10
-
R
O
O
o
T
+25 C
-
ns
F
o
o
Minimum Closed Loop
Stable Gain
CLSG
R = 1kΩ, C ≤ 10pF
-55 C to +125 C
10
V/V
L
L
o
Overshoot
+OS
-OS
V
V
V
= 0V to +200mV
= 0V to -200mV
1
1
1
+25 C
-
-
-
30
30
60
%
%
Ω
O
o
+25 C
O
o
Open Loop Output
Resistance
R
= 0V
+25 C
OUT
OUT
o
o
Quiescent Power
Consumption
PC
V
= 0V, I
= 0mA
1, 3
-55 C to +125 C
-
450
mW
OUT
OUT
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
).
PEAK
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
4. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3, 4, 5, 6
1, 2, 3, 4, 5, 6
1
Groups C & D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number 511089-883
3-56
HA-2839/883
Die Characteristics
DIE DIMENSIONS:
65 x 52 x 19 mils ± 1 mils
1650 x 1310 x 483µm ± 25.4µm
METALLIZATION:
Type: Aluminum, 1% Copper
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Al, 1% Cu
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1kÅ
WORST CASE CURRENT DENSITY:
1.3 x 105 A/cm2 at 3.4mA
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 34
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2839/883
V+
OUT
-IN
+IN
V-
Spec Number 511089-883
3-57
HA-2839/883
Test Circuit (Applies to Table 1)
+VCC
-1
V1
0.1
1
S7
100K
100K
1K
1
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
OPEN
OPEN
2
S1
OPEN 2
1
2 OPEN
S5A
S6
2
1
DUT
+
F B
+
1
S5B
S9
OPEN
S2
1
1
S8
2
2
1
3
OPEN
OPEN 2
1K
1
V2
OPEN
1K
10K
-VEE
0.1
1
100
100
EOUT
BUFFER
10K
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL RESPONSE (APPLIES TO TABLE 3)
VIN
+
-
VOUT
NOTES:
1. V = ±15V
900Ω
100Ω
S
50Ω
2. A = +10
V
3. C ≤ 10pF
L
MEASURED LARGE SIGNAL RESPONSE
MEASURED SMALL SIGNAL RESPONSE
Vertical Scale: Input = 1V/Div., Output = 5V/Div.
Horizontal Scale: 50ns /Div.
Vertical Scale: Input = 10mV/Div., Output=100mV/Div.
Horizontal Scale: 50ns/Div.
INPUT
INPUT
OUTPUT
OUTPUT
Spec Number 511089-883
3-58
HA-2839/883
Burn-In Circuit
HA1-2839/883 CERAMIC DIP
R2
1
2
3
4
5
6
7
14
13
12
11
10
9
V -
R1
C2
D
2
V+
D1
C1
8
NOTES:
1. R = 10kΩ, ±5%, 1/4W (Min)
1
2. R = 1kΩ, ±5%, 1/4W (Min)
2
3. C = C = 0.01µF/Socket (Min) or 0.1µF/Row, (Min)
1
2
4. D = D = 1N4002 or Equivalent/Board
1
2
5. (V+) - (V-) = 31V ± 1V
Spec Number 511089-883
3-59
HA-2839/883
Schematic Diagram
V+
R2
3K
R3
1.4K
R4
1.4K
R10
190
R16
190
R17
500
QP5
QP4
QP7
QP11
QP12
QP14
QP15
QP3
R5
3K
R1
250K
QP8
QN15
QP6
R18
10
CC
1.1pF
QN16
QP16
V-
R19
3K
QP13
QN5
QN6
R24
35
R23
6K
QN9
R11
40
R12
40
QP1
OUT
R25
35
QN1
+IN
-IN
QN12
QP18
R20
10
R13
40
R14
40
R6
10K
V+
QP17
DZ1
QP2
QP9
QP10
QN3
QN7
QN10
QN11
QN13
R8
3K
QN8
QN14
QN2
QN4
R7
1.4K
R9
1.4K
R21
190
R22
500
R15
190
V-
Spec Number 511089-883
3-60
HA-2839
Very High Slew Rate,
Wideband Operational Amplifier
DESIGN INFORMATION
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
o
Typical Performance Curves
V
= ±15V, A = +10, R = 1kΩ, C ≤ 10pF, T = +25 C, Unless Otherwise Specified
SUPPLY
V
L
L
A
FREQUENCY RESPONSE FOR VARIOUS GAINS
OPEN LOOP
GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
100
80
60
40
20
0
650
600
550
500
AVCL = 1000
AVCL = 100
AVCL = 10
0
90
180
OPEN LOOP
10K
1K
100K
1M
10M
100M
5
6
7
8
9
10
11
12
13
14
15
SUPPLY VOLTAGE (±V)
FREQUENCY (Hz)
GAIN BANDWIDTH PRODUCT vs TEMPERATURE
CMRR vs FREQUENCY
750
650
550
450
350
250
90
80
70
60
50
40
30
20
-60 -40
-20
0
+20
+40 +60 +80 +100 +120 +140
100
1K
10K
100K
1M
10M
TEMPERATURE (oC)
FREQUENCY (Hz)
Spec Number 511089-883
3-61
HA-2839
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
o
Typical Performance Curves
V
= ±15V, A = +10, R = 1kΩ, C ≤ 10pF, T = +25 C, Unless Otherwise Specified
SUPPLY
V
L
L
A
PSRR vs FREQUENCY
110
INPUT NOISE vs FREQUENCY
50
100
90
±PSRR
80
37.5
25
30
20
10
0
70
60
50
NOISE CURRENT
40
30
NOISE VOLTAGE
12.5
0
20
10
0
100
1K
10K
100K
1M
10M
10
100
1K
10K
100K
FREQUENCY (Hz)
FREQUENCY (Hz)
SLEW RATE vs TEMPERATURE
SLEW RATE vs SUPPLY VOLTAGE
750
700
650
600
550
500
450
700
650
600
550
5
6
7
8
9
10
11
12
13
14
15
-60 -40
-20
0
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
SUPPLY VOLTAGE (±V)
INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs
TEMPERATURE
8.0
SUPPLY CURRENT vs SUPPLY VOLTAGE
14
12
10
8
3.5
2.5
1.5
0.5
-0.5
7.0
6.0
5.0
4.0
3.0
-55oC +25oC
+125oC
BIAS CURRENT
OFFSET VOLTAGE
6
5
6
7
8
9
10
11
12
13
14
15
SUPPLY VOLTAGE (±V)
-60 -40 -20
0
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
Spec Number 511089-883
3-62
HA-2839
DESIGN INFORMATION(Continued)
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
o
Typical Performance Curves
V
= ±15V, A = +10, R = 1kΩ, C ≤ 10pF, T = +25 C, Unless Otherwise Specified
SUPPLY
V
L
L
A
POSITIVE OUTPUT SWING vs TEMPERATURE
NEGATIVE OUTPUT SWING vs TEMPERATURE
15
±8V, 75Ω
-2.5
±8V, 150Ω
±8V, 1kΩ
12.5
10
±15V, 1kΩ
-5
±15V, 75Ω
±15V, 150Ω
7.5
5
-7.5
-10
±15V, 75Ω
±15V, 150Ω
±8V, 1kΩ
±8V, 150Ω
±8V, 75Ω
±15V, 1kΩ
2.5
0
-12.5
-60 -40 -20
0
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
-60 -40 -20
0
+20 +40 +60 +80 +100 +120 +140
TEMPERATURE (oC)
MAXIMUM UNDISTORTED OUTPUT SWING vs
FREQUENCY
TOTAL HARMONIC DISTORTION vs FREQUENCY
-35
-45
-55
-65
-75
-85
25
20
15
10
5
VSUPPLY = ±15V
VSUPPLY = ±8V
VO = 10VP-P
VO = 0.5VP-P
VO = 1VP-P
VO = 2VP-P
0
100K
1M
10M
1K
10K
100K
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)
-35
VO = 0.5VP-P
VO = 1VP-P
-45
VO =2VP-P
-55
VO = 5VP-P
-65
-75
VO = 0.25VP-P
-85
-95
500K
1M
10M
FREQUENCY (Hz)
Spec Number 511089-883
3-63
HA-2839
TYPICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
= ±15V, R = 1kΩ, C ≤ 10pF, Unless Otherwise Specified
SUPPLY
L
L
PARAMETERS
CONDITIONS
TEMPERATURE
TYPICAL
0.6
2.0
20
UNITS
mV
o
Input Offset Voltage
V
= 0V
+25 C
CM
Full
Full
mV
o
Average Offset Voltage Drift
Input Bias Current
Versus Temperature
µV/ C
o
V
= 0V
+25 C
5.0
8.0
1.0
10
µA
µA
CM
Full
o
Input Offset Current
V
= 0V
+25 C
µA
CM
o
Differential Input Resistance
Input Noise Voltage Density
Input Noise Current Density
Large Signal Voltage Gain
+25 C
kΩ
o
f
f
= 1000Hz
= 1000Hz
+25 C
6.0
6.0
25
nV/√Hz
pA/√Hz
kV/V
kV/V
dB
O
o
+25 C
O
o
V
V
V
= ±10V
+25 C
OUT
Full
Full
20
CMRR
= ±10V
80
CM
o
Gain Bandwidth Product
Output Current
Output Resistance
Full Power Bandwidth
Slew Rate
+25 C
600
±20
30
MHz
mA
≥ 10V
Full
OUT
o
Open Loop
FPBW = SR/2πV , V = 10V
+25 C
Ω
o
+25 C
9.6
600
4
MHz
V/µs
ns
P
P
o
V
V
V
= ±10V, A = +10
+25 C
OUT
OUT
OUT
V
o
Rise and Fall Time
Overshoot
= ±100mV, A = +10
+25 C
V
o
= ±100mV, A = +10
+25 C
20
%
V
PSRR
Delta V = ±10V to ±20V
Full
Full
90
dB
S
Supply Current
Differential Gain
Differential Phase
Harmonic Distortion
No Load
13
mA
o
A = +10, NTSC
+25 C
0.03
0.03
-79
%
V
o
A = +10, NTSC
+25 C
Degrees
dBc
V
o
A = +10, f = 1MHz,
+25 C
V
V
= 2V
P-P
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 511089-883
3-64
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