HCS190HMSR [INTERSIL]
Radiation Hardened Synchronous 4-Bit Up/Down Counter; 抗辐射同步4位加/减计数器
| 型号： | HCS190HMSR |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Synchronous 4-Bit Up/Down Counter |
| 文件： | 总9页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCS190MS
Radiation Hardened Synchronous
4-Bit Up/Down Counter
September 1995
Features
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
VCC
P0
P1
Q1
16
15
14
13
1
2
3
4
5
6
7
8
Q0
CP
CE
RC
U/D
Q2
12 TC
PL
11
10 P2
P3
Q3
GND
9
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
Description
The Intersil HCS190MS is an asynchronously presettable BCD
Decade synchronous counter. Presetting the counter to the
number on the preset data inputs (P0 - P3) is accomplished by a
low on the parallel load input (PL). Counting occurs when (PL) is
high, Count Enable (CE) is low and the Up/Down (U/D) input is
either low for up-counting or high for down-counting. The counter
is incremented or decremented synchronously with the low-to-high
transition of the clock.
VCC
P0
P1
Q1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Q0
CP
RC
TC
PL
CE
U/D
Q2
P2
Q3
When an overflow or underflow of the counter occurs, the Terminal
Count output (TC), which is low during counting, goes high and
remains high for one clock cycle. This output can be used for look-
ahead carry in high speed cascading. The TC output also initiates
the Ripple Clock output (RC) which, normally high, goes low and
remains low for the low-level portion of the clock pulse. These
counter can be cascaded using the Ripple Carry output.
P3
GND
TRUTH TABLE
INPUTS
OUTPUT
FUNCTION
PL
CE
U/D
L
CP
If the decade counter is preset to an illegal state or assumes an
illegal state when power is applied, it will return to the normal
sequence in one or two counts.
H
H
L
L
L
Count Up
H
Count Down
Preset
The HCS190MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
X
H
X
X
X
H
X
No Change
The HCS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
=Positive Transistion
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
PACKAGE
16 Lead SBDIP
o
o
HCS190DMSR
-55 C to +125 C
o
o
HCS190KMSR
-55 C to +125 C
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
HCS190D/Sample
HCS190K/Sample
HCS190HMSR
+25 C
o
+25 C
Sample
16 Lead Ceramic Flatpack
Die
o
+25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518836
File Number 2251.2
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
260
Specifications HCS190MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . . 114 C/W
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
θ
θ
JA
JC
o
o
73 C/W
24 C/W
o
o
29 C/W
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
o
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 sinking or derate linearly at the following rate:
o
(All Voltage Reference to the VSS Terminal)
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/ C
o
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/ C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
o
o
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Supply Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
2, 3
1
+25 C
-
40
o
o
+125 C, -55 C
-
750
µA
o
Output Current
(Source)
IOH
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
+25 C
-4.8
-4.0
4.8
4.0
-
-
-
-
-
mA
mA
mA
mA
V
o
o
2, 3
1
+125 C, -55 C
o
Output Current
(Sink)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
+25 C
o
o
2, 3
1, 2, 3
+125 C, -55 C
o
o
o
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
+25 C, +125 C, -55 C
VCC
-0.1
o
o
o
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
VCC
-0.1
-
V
V
V
o
o
o
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25 C, +125 C, -55 C
-
-
0.1
0.1
o
o
o
VCC = 4.5V, VIH = 3.15V,
+25 C, +125 C, -55 C
VIL = 1.35V, IOL = 50µA
o
Input Leakage
Current
IIN
FN
VCC = 5.5V, VIN = VCC or
GND
1
+25 C
-
-
-
±0.5
±5.0
-
µA
µA
V
o
o
2, 3
+125 C, -55 C
o
o
o
Noise Immunity
Functional Test
VCC = 4.5V,
VIH = 3.15V,
7, 8A, 8B
+25 C, +125 C, -55 C
VIL = 1.35V, (Note 3)
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518836
261
Specifications HCS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
LIMITS
MIN
(NOTES 1, 2)
A SUB-
PARAMETER
Propagation Delay
PL to Qn
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MAX
30
35
35
41
28
33
33
38
31
37
28
34
25
28
24
26
41
49
40
47
37
40
34
40
40
43
40
36
24
25
26
26
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
o
TPLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
9
+25 C
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
o
o
+125 C, -55 C
o
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
Pn to Qn
CP to Qn
CP to RC
CP to TC
U/D to RC
U/D to TC
CE to RC
NOTES:
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
9
+125 C, -55 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
o
10, 11
+125 C, -55 C
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
Spec Number 518836
262
Specifications HCS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
o
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
+25 C
-
36
62
10
10
-
o
o
+125 C, -55 C
-
o
Input Capacitance
CIN
TSU
TSU
TSU
TH
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
+25 C
-
o
o
+125 C, -55 C
-
o
Setup Time
Pn to PL
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
12
18
12
18
18
27
2
o
o
+125 C, -55 C
-
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
CE to CP
+125 C, -55 C
-
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
U/D to CP
Hold Time
Pn to PL
+125 C, -55 C
-
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
+125 C, -55 C
2
-
o
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
2
-
o
o
CE to CP
+125 C, -55 C
2
-
o
TH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
0
-
o
o
U/D to CP
Pulse Width Time
CP
+125 C, -55 C
0
-
o
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
16
24
20
30
12
18
30
20
1
-
o
o
+125 C, -55 C
-
o
TW
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
PL
+125 C, -55 C
-
o
Recovery Time
TREC
FMAX
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
+125 C, -55 C
-
o
Maximum
Frequency
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
-
o
o
+125 C, -55 C
-
o
Output Transition
Time
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
15
22
o
o
+125 C, -55 C
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
(NOTE 1)
PARAMETER
Supply Current
SYMBOL
ICC
CONDITIONS
TEMPERATURE
MIN
-
MAX
0.75
-
UNITS
mA
o
VCC = 5.5V, VIN = VCC or GND
+25 C
o
Output Current
(Source)
IOH
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
+25 C
-4.0
mA
o
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
+25 C
4.0
-
mA
VOUT = 0.4V, VIL = 0
Spec Number 518836
263
Specifications HCS190MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
o
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
+25 C
VCC
-0.1
-
V
o
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
+25 C
VCC
-0.1
-
V
V
V
o
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25 C
-
0.1
0.1
o
VCC = 4.5V, VIH = 3.15V,
+25 C
-
VIL = 1.35V, IOL = 50µA
o
Input Leakage Current
IIN
FN
VCC = 5.5V, VIN = VCC or GND
+25 C
-
-
±5
µA
o
Noise Immunity
Functional Test
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
+25 C
-
V
o
Propagation Delay
PL to Qn
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
TPLH
TPHL
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
+25 C
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
35
41
33
38
37
34
28
26
49
47
40
40
43
36
25
26
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
o
+25 C
o
Pn to Qn
+25 C
o
+25 C
o
CP to Qn
CP to RC
CP to TC
U/D to RC
U/D to TC
CE to RC
NOTES:
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
o
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)
GROUP B
PARAMETER
SUBGROUP
DELTA LIMIT
12µA
ICC
IOL/IOH
5
5
-15% of 0 Hour
Spec Number 518836
264
Specifications HCS190MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
READ AND RECORD
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
1, 7, 9
1, 7, 9
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
Interim Test III (Postburn-In)
PDA
ICC, IOL/H, IOZL/H
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Subgroups 1, 2, 3, 9, 10, 11
Group D
NOTE:
1, 7, 9
1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
METHOD
PRE RAD
POST RAD
PRE RAD
1, 7, 9
POST RAD
5005
1, 7, 9
Table 4
Table 4 (Note 1)
1. Except FN test which will be performed 100% go/no-go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
STATIC I BURN-IN (Note 1)
2, 3, 6, 7, 12, 13
1, 4, 5, 8, 9, 10,
11, 14, 15
-
16
-
-
STATIC II BURN-IN (Note 1)
2, 3, 6, 7, 12, 13
8
-
1, 4, 5, 9, 10, 11, 14,
15, 16
-
-
-
DYNAMIC BURN-IN (Note 2)
-
1, 4, 5, 8, 9, 10, 15
2, 3, 6, 7, 12, 13
11, 16
14
NOTES:
1. Each pin except VCC and GND will have a series resistor of 10K ± 5%.
2. Each pin except VCC and GND will have a series resistor of 1K ± 5%.
TABLE 9. IRRADIATION TEST CONNECTIONS
GROUND VCC = 5V ± 0.5V
1, 4, 5, 9, 10, 11, 14, 15, 16
OPEN
2, 3, 6, 7, 12, 13
8
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E,
Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518836
265
HCS190MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% PIND, Method 2020, Condition A
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
Spec Number 518836
266
HCS190MS
Propagation Delay Load Circuit
Propagation Delay Timing Diagram
VIH
TEST
POINT
DUT
INPUT
VS
VSS
TPLH
CL
CL = 50pF
RL = 500Ω
RL
TPHL
VOH
VOL
VS
OUTPUT
Transition Timing Diagram
TTLH
VOH
TTHL
80%
80%
20%
20%
OUTPUT
VOL
VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
0
UNITS
V
V
V
V
V
VIH
VS
VIL
GND
0
Pulse Width, Setup, Hold Timing Diagram
Positive Edge Trigger
Propagation Delay Load Circuit
TEST
DUT
TW
POINT
INPUT
VIH
VS
VIL
CL
CL = 50pF
RL
TH
TSU
RL = 500Ω
TW
EN INPUT
VIH
VS
VIL
TH = Hold Time
TSU = Setup Time
TW = Pulse Width
AC VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
0
UNITS
V
V
V
V
V
VIH
VS
VIL
GND
0
Spec Number 518836
267
HCS190MS
Die Characteristics
DIE DIMENSIONS:
104 x 86 (mils)
2.65 x 2.19 (mm)
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105 A/cm2
BOND PAD SIZE:
4 x 4 (mils)
100 x 100µm
Metallization Mask Layout
HCS190MS
(15) P0
(14) CP
Q0 (3)
CE (4)
(13) RC
U/D (5)
Q2 (6)
(12) TC
(11) PL
Q3 (7)
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCS190 is TA14344A.
Spec Number 518836
268
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