HCS240DMSR [INTERSIL]
Radiation Hardened Octal Buffer/Line Driver, Three-State; 抗辐射八路缓冲器/线路驱动器，三态
| 型号： | HCS240DMSR |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Octal Buffer/Line Driver, Three-State |
| 文件： | 总10页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCS240MS
Radiation Hardened
Octal Buffer/Line Driver, Three-State
September 1995
Features
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
1
2
20
19
18
17
16
15
14
13
12
11
VCC
BE
AE
AI1
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
3
BO4
AI2
AO1
BI4
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
4
5
BO3
AI3
AO2
BI3
6
7
BO2
AI4
AO3
BI2
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
8
9
BO1
GND
AO4
BI1
10
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
Description
VCC
BE
AE
AI1
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
The Intersil HCS240MS is a Radiation Hardened Inverting
Octal Buffer/Line Driver, Three-State, with two active-low
output enables.
BO4
AI2
AO1
BI4
The HCS240MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
BO3
AI3
AO2
BI3
BO2
AI4
AO3
BI2
The HCS240MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
BO1
GND
AO4
BI1
Ordering Information
PART NUMBER
HCS240DMSR
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
20 Lead SBDIP
o
o
-55 C to +125 C
Intersil Class S Equivalent
o
o
HCS240KMSR
-55 C to +125 C
Intersil Class S Equivalent
20 Lead Ceramic Flatpack
20 Lead SBDIP
o
HCS240D/Sample
HCS240K/Sample
HCS240HMSR
+25 C
Sample
Sample
Die
o
+25 C
20 Lead Ceramic Flatpack
Die
o
+25 C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518837
File Number 3562.1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HCS240MS
Functional Diagram
AO1
18
AO2
16
AO3
14
AO4
12
BO1
9
BO2
7
BO3
5
BO4
3
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
19
BE
1
AE
2
AI1
4
AI2
6
AI3
8
AI4
11
BI1
13
BI2
15
BI3
17
BI4
TRUTH TABLE
INPUTS
OUTPUT
AE, BE
An
L
Yn
H
L
L
L
H
H
X
Z
H = High Voltage Level, L =Low Voltage Level
X = Immaterial, Z =High Impedance
Spec Number 518837
2
Specifications HCS240MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . . 107 C/W 28 C/W
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
θ
θ
JA
JC
o
o
72 C/W
24 C/W
o
o
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
o
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 sinking or derate linearly at the following rate:
o
(All Voltage Reference to the VSS Terminal)
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/ C
o
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/ C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
o
o
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Supply Current
ICC
VCC = 5.5V,
1
+25 C
-
40
VIN = VCC or GND
o
o
2, 3
1
+125 C, -55 C
-
750
µA
o
Output Current
(Source)
IOH
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
+25 C
-7.2
-6.0
-
-
mA
o
o
2, 3
+125 C, -55 C
mA
o
Output Current
(Sink)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
1
+25 C
7.2
6.0
-
-
mA
mA
o
o
2, 3
+125 C, -55 C
o
o
o
Output Voltage High
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
VCC
-0.1
-
V
V
V
V
o
o
o
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
+25 C, +125 C, -55 C
VCC
-0.1
-
o
o
o
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25 C, +125 C, -55 C
-
0.1
0.1
o
o
o
VCC = 4.5V, VIH = 3.15V,
+25 C, +125 C, -55 C
-
VIL = 1.35V, IOL = 50µA
o
Input Leakage
Current
IIN
IOZ
FN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
+25 C
-
-
-
-
-
±0.5
±5.0
±1
µA
µA
µA
µA
V
o
o
+125 C, -55 C
o
Three-State Output
Leakage Current
VCC = 5.5V, Force Voltage
= 0V or VCC
1
+25 C
o
o
2, 3
+125 C, -55 C
±50
-
o
o
o
Noise Immunity
Functional Test
VCC = 4.5V,
VIH = 3.15V,
7, 8A, 8B
+25 C, +125 C, -55 C
VIL = 1.35V, (Note 3)
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518837
3
Specifications HCS240MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
LIMITS
MIN
(NOTES 1, 2)
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MAX
18
20
19
21
22
25
21
23
20
22
20
21
UNITS
ns
o
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
9
+25 C
2
2
2
2
2
2
2
2
2
2
2
2
o
o
+125 C, -55 C
ns
o
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
NOTES:
TPLH1
TPZL1
TPLZ1
TPZH1
TPHZ1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
ns
o
o
10, 11
+125 C, -55 C
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MIN
MAX
56
UNITS
pF
o
Capacitance Power
Dissipation
CPD
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
+25 C
-
-
o
o
+125 C, -55 C
86
pF
o
Input Capacitance
Output Capacitance
Output Transition Time
NOTE:
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
+25 C
-
10
pF
o
o
+125 C, -55 C
-
10
pF
o
COUT
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
+25 C
-
20
pF
o
o
+125 C, -55 C
-
20
pF
o
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
1
1
15
ns
o
o
+125 C, -55 C
22
ns
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
Spec Number 518837
4
Specifications HCS240MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
(NOTE 1)
PARAMETER
Supply Current
SYMBOL
ICC
CONDITIONS
TEMPERATURE
MIN
MAX
0.75
-
UNITS
mA
o
VCC = 5.5V, VIN = VCC or GND
+25 C
-
o
Output Current
(Source)
IOH
VCC = VIH = 4.5V, VOUT = VCC -0.4V,
VIL = 0
+25 C
-6.0
mA
o
Output Current (Sink)
Output Voltage High
IOL
VCC = VIH = 4.5V, VOUT = 0.4V,
VIL = 0
+25 C
6.0
-
-
mA
V
o
VOH
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
+25 C
VCC
-0.1
o
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
+25 C
VCC
-0.1
-
V
o
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
+25 C
-
-
0.1
0.1
V
o
VCC = 4.5V, VIH = 3.15V,
+25 C
V
VIL = 1.35V, IOL = 50µA
o
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25 C
-
-
±5
µA
µA
o
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force Voltage = 0V or VCC
+25 C
±50
o
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
(Note 2)
+25 C
-
-
V
o
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
Propagation Delay
NOTES:
TPHL1
TPLH1
TPZL1
TPLZ1
TPZH1
TPHZ1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
2
2
2
2
2
2
20
21
25
23
22
21
ns
ns
ns
ns
ns
ns
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
o
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
+25 C
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
o
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)
GROUP B
PARAMETER
SUBGROUP
DELTA LIMIT
12µA
ICC
5
5
5
IOL/IOH
IOZ
-15% of 0 Hour
±200nA
Spec Number 518837
5
Specifications HCS240MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
READ AND RECORD
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
1, 7, 9
1, 7, 9
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
Interim Test III (Postburn-In)
PDA
ICC, IOL/H, IOZL/H
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Subgroups 1, 2, 3, 9, 10, 11
Group D
NOTE:
1, 7, 9
1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
METHOD
PRE RAD
POST RAD
PRE RAD
1, 9
POST RAD
5005
1, 7, 9
Table 4
Table 4 (Note 1)
1. Except FN test which will be performed 100% go/no-go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
STATIC I BURN-IN (Note 1)
3, 5, 7, 9, 12, 14, 16, 18
1, 2, 4, 6, 8, 10, 11,
13, 15, 17, 19
-
20
-
-
STATIC II BURN-IN (Note 1)
3, 5, 7, 9, 12, 14, 16, 18
10
-
1, 2, 4, 6, 8, 11, 13,
15, 17, 19, 20
-
-
-
DYNAMIC BURN-IN (Note 2)
-
1, 10, 19
3, 5, 7, 9, 12, 14, 16,
18
20
2, 4, 6, 8, 11,
13, 15, 17
NOTES:
1. Each pin except VCC and GND will have a series resistor of 10kΩ ± 5%.
2. Each pin except VCC and GND will have a series resistor of 680Ω ± 5%.
TABLE 9. IRRADIATION TEST CONNECTIONS
GROUND VCC = 5V ± 0.5V
10 1, 2, 4, 6, 8, 11, 13, 15, 17, 19, 20
OPEN
3, 5, 7, 9, 12, 14, 16, 18
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E,
Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518837
6
HCS240MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% PIND, Method 2020, Condition A
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518837
7
HCS240MS
Propagation Delay Load Circuit
Propagation Delay Timing Diagram
VIH
TEST
POINT
DUT
INPUT
VS
VSS
TPLH
CL
CL = 50pF
RL = 500Ω
RL
TPHL
VOH
VOL
VS
OUTPUT
Transition Timing Diagram
TTLH
VOH
TTHL
80%
80%
20%
20%
OUTPUT
VOL
VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
0
UNITS
V
V
V
V
V
VIH
VS
VIL
GND
0
Three-State High Timing Diagrams
Three-State High Load Circuit
VIH
TEST
DUT
POINT
INPUT
VS
VSS
TPZH
CL
CL = 50pF
RL
TPHZ
RL = 500Ω
VOH
VOZ
VT
VW
OUTPUT
THREE-STATE HIGH VOLTAGE LEVELS
PARAMETER
VCC
HCS
4.50
4.50
2.25
2.25
3.60
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
Spec Number 518837
8
HCS240MS
Three-State Low Load Circuit
Three-State Low Timing Diagrams
VCC
VIH
INPUT
VS
VSS
RL
CL
TPZL
TPLZ
VOZ
VOL
TEST
POINT
DUT
VT
VW
OUTPUT
CL = 50pF
THREE-STATE LOW VOLTAGE LEVELS
RL = 500Ω
PARAMETER
VCC
HCS
4.50
4.50
2.25
2.25
0.90
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
Spec Number 518837
9
HCS240MS
Die Characteristics
DIE DIMENSIONS:
108 x 106 x 19 ± 1mils
METALLIZATION:
Type: Si - Al
Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105 A/cm2
BOND PAD SIZE:
4 x 4 (mils)
100 x 100µm
Metallization Mask Layout
HCS240MS
(18) AO1
(17) BI4
AI2 (4)
BO3 (5)
(16) AO2
(15) BI3
AI3 (6)
BO2 (7)
(14) AO3
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Spec Number 518837
10
相关型号：
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