HCTS365DMSR [INTERSIL]
Radiation Hardened Hex Buffer/Line Driver Non-Inverting; 抗辐射六角缓冲器/线路驱动器非反相
| 型号： | HCTS365DMSR |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Hex Buffer/Line Driver Non-Inverting |
| 文件： | 总10页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HCTS365MS
Radiation Hardened
Hex Buffer/Line Driver Non-Inverting
September 1995
Features
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
OE1
A1
1
2
3
4
5
6
7
8
16 VCC
15 OE2
14 A6
13 Y6
12 A5
11 Y5
10 A4
• Dose Rate Survivability: >1 x 1012 RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
Y1
A2
Y2
A3
• Fanout (Over Temperature Range)
- Bus Driver Outputs: 15 LSTTL Loads
Y3
9
Y4
GND
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
• LSTTL Input Compatibility
- VIL = 0.8V Max
OE1
A1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
OE2
A6
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA @ VOL, VOH
Y1
A2
Y6
Description
Y2
A5
The Intersil HCTS365MS is a Radiation Hardened non-
inverting hex buffer and line driver with Tri-state outputs. The
output enables (OE1 and OE2) control the three-state out-
puts. If either OE1 or OE2 is high the outputs will be in a
High impedance state. For Data, OE1 and OE2 must be
Low.
A3
Y5
Y3
A4
GND
Y4
The HCTS365MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
PART NUMBER
HCTS365DMSR
TEMPERATURE RANGE
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
PACKAGE
16 Lead SBDIP
o
o
-55 C to +125 C
o
o
HCTS365KMSR
-55 C to +125 C
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
HCTS365D/Sample
HCTS365K/Sample
HCTS365HMSR
+25 C
o
+25 C
Sample
16 Lead Ceramic Flatpack
Die
o
+25 C
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518637
File Number 3070.1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HCTS365MS
Functional Diagram
XX
ONE OF THE IDENTICAL CIRCUITS
2
1A
3
1Y
GND
8
1
4
3
2A
27
OE1
6
7
9
15
2A
27
27
27
27
OE2
10
2A
12
11
13
2A
14
2A
TRUTH TABLE
INPUTS
OUTPUTS
OE1
L
OE2
L
A
L
Y
L
L
L
H
X
X
H
Z
Z
X
H
H
X
Spec Number 518637
2
Specifications HCTS365MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Thermal Resistance
SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . . 114 C/W
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/ C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/ C
θ
θ
JA
JC
o
o
73 C/W
24 C/W
o
o
29 C/W
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C
o
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C
o
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
o
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
o
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V (TR, TF) . . . . . . . . . . 500ns Max.
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
o
o
Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
LIMITS
(NOTE 1)
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Quiescent Current
ICC
VCC = 5.5V,
VIN = VCC or GND
1
2, 3
1
+25 C
-
40
o
o
+125 C, -55 C
-
750
µA
o
Output Current
(Sink)
IOL
IOH
VOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0
+25 C
7.2
6.0
-7.2
-6.0
-
-
mA
mA
mA
mA
V
o
o
2, 3
1
+125 C, -55 C
-
-
o
Output Current
(Source)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0V
+25 C
o
o
2, 3
1, 2, 3
+125 C, -55 C
-
o
o
o
Output Voltage Low
VCC = 4.5V, VIH = 2.25V,
+25 C, +125 C, -55 C
0.1
IOL = 50µA, VIL = 0.8V
o
o
o
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
1, 2, 3
1, 2, 3
1, 2, 3
+25 C, +125 C, -55 C
-
0.1
V
V
V
o
o
o
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
+25 C, +125 C, -55 C
VCC
-0.1
-
-
o
o
o
VCC = 5.5V, VIH =2.75V,
IOH = -50µA, VIL = 0.8V
+25 C, +125 C, -55 C
VCC
-0.1
o
Input Leakage
Current
IIN
IOZ
FN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
+25 C
-
-
-
-
-
±0.5
±5.0
±1
µA
µA
µA
µA
-
o
o
+125 C, -55 C
o
Three-State Output
Leakage Current
VCC = 5.5V,
Applied Voltage = 0V or VCC
1
+25 C
o
o
2, 3
+125 C, -55 C
±50
-
o
o
o
Noise Immunity
Functional Test
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B
+25 C, +125 C, -55 C
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518637
3
Specifications HCTS365MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
LIMITS
MIN
(NOTES 1, 2)
A SUB-
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MAX
19
23
19
23
27
33
22
26
24
27
22
25
UNITS
ns
o
Data to Output
TPLH
VCC = 4.5V
9
10, 11
9
+25 C
2
2
2
2
2
2
2
2
2
2
2
2
o
o
+125 C, -55 C
ns
o
TPHL
TPZL
TPZH
TPLZ
TPHZ
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
Enable to Output
Disable to Output
NOTES:
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
9
+125 C, -55 C
ns
o
+25 C
ns
o
o
10, 11
+125 C, -55 C
ns
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
41
UNITS
pF
o
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
1
1
1
1
1
+25 C
-
-
o
o
+125 C, -55 C
53
pF
o
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
VCC = 4.5V
+25 C
-
10
pF
o
o
+125 C, -55 C
-
10
pF
o
Output Transition
Time
TTHL
TTLH
+25 C
12
18
12
ns
o
o
+125 C, -55 C
18
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K LIMITS
RAD
(NOTES 1, 2)
PARAMETER
Quiescent Current
Output Current (Sink)
SYMBOL
ICC
CONDITIONS
TEMPERATURE
MIN
-
MAX
0.75
-
UNITS
mA
o
VCC = 5.5V, VIN = VCC or GND
+25 C
o
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25 C
6.0
mA
o
Output Current (Source)
Output Voltage Low
Output Voltage High
IOH
VOL
VOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25 C
-6.0
-
-
0.1
-
mA
V
o
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOL = 50µA
+25 C
o
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOH = -50µA
+25 C
VCC
-0.1
V
Spec Number 518637
4
Specifications HCTS365MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K LIMITS
RAD
(NOTES 1, 2)
PARAMETER
SYMBOL
IIN
CONDITIONS
TEMPERATURE
MIN
MAX
±5
UNITS
µA
o
Input Leakage Current
VCC = 5.5V, VIN = VCC or GND
+25 C
-
-
o
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Applied Voltage = 0V or VCC
+25 C
±50
µA
o
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
+25 C
-
-
-
o
Data to Output
Enable to Output
Disable to Output
NOTES:
TPLH
TPHL
TPZL
TPZH
TPLZ
TPHZ
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
+25 C
2
2
2
2
2
2
23
23
33
26
27
25
ns
ns
ns
ns
ns
ns
o
+25 C
o
+25 C
o
+25 C
o
+25 C
o
+25 C
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
o
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)
GROUP B
PARAMETER
SUBGROUP
DELTA LIMIT
12µA
ICC
5
5
5
IOL/IOH
-15% of 0 Hour
±200nA
IOZL/IOZH
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
GROUP A SUBGROUPS
READ AND RECORD
ICC, IOL/H
Initial Test (Preburn-In)
1, 7, 9
1, 7, 9
Interim Test I (Postburn-In)
Interim Test II (Postburn-In)
PDA
ICC, IOL/H
ICC, IOL/H
1, 7, 9
1, 7, 9, Deltas
Interim Test III (Postburn-In)
PDA
1, 7, 9
1, 7, 9, Deltas
Final Test
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Group A (Note 1)
Group B
Subgroup B-5
Subgroups 1, 2, 3, 9, 10, 11,
(Note 2)
Subgroup B-6
Sample/5005
Sample/5005
1, 7, 9
1, 7, 9
Group D
NOTES:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters only.
Spec Number 518637
5
Specifications HCTS365MS
TABLE 7. TOTAL DOSE IRRADIATION
TEST
READ AND RECORD
CONFORMANCE
GROUPS
METHOD
PRE RAD
POST RAD
PRE RAD
1, 9
POST RAD
Group E Subgroup 2
NOTE:
5005
1, 7, 9
Table 4
Table 4 (Note 1)
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1)
3, 5, 7, 9, 11,
13
1, 2, 4, 6, 8, 10, 12, 14,
15
-
-
16
-
-
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
3, 5, 7, 9, 11,
13
8
1, 2, 4, 6, 10, 12, 14, 15,
16
-
-
-
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)
1, 8, 15 3, 5, 7, 9, 11, 13
-
16
2, 4, 6, 10, 12, 14
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
1, 2, 4, 6, 10, 12, 14 - 16
3, 5, 7, 9, 11, 13
8
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518637
6
HCTS365MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% PIND, Method 2020, Condition A
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518637
7
HCTS365MS
AC Load Circuit
AC Timing Diagrams
VIH
DUT
TEST
POINT
INPUT
VS
VIL
CL
RL
TPLH
TPHL
VOH
VOL
VOH
VOL
VS
OUTPUT
CL = 50pF
RL = 500Ω
TTLH
TTHL
80%
80%
20%
20%
OUTPUT
AC VOLTAGE LEVELS
PARAMETER
HCTS
4.50
3.00
1.30
0
UNITS
VCC
V
V
V
V
V
VIH
VS
VIL
GND
0
Three-State Low Timing Diagrams
Three-State Low Load Circuit
VIH
VCC
INPUT
VS
VIL
RL
TPZL
TPLZ
VOZ
VOL
TEST
POINT
DUT
VT
VW
OUTPUT
CL
CL = 50pF
RL = 500Ω
THREE-STATE LOW VOLTAGE LEVELS
PARAMETER
VCC
HCTS
4.50
3.00
1.30
1.30
0.90
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
Spec Number 518637
8
HCTS365MS
Three-State High Load Circuit
Three-State High Timing Diagrams
VIH
TEST
POINT
DUT
INPUT
VS
VIL
TPZH
CL
CL = 50pF
RL = 500Ω
RL
TPHZ
VOH
VOZ
VT
VW
OUTPUT
THREE-STATE HIGH VOLTAGE LEVELS
PARAMETER
VCC
HCTS
4.50
3.00
1.30
1.30
3.60
0
UNITS
V
V
V
V
V
V
VIH
VS
VT
VW
GND
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
Spec Number 518637
9
HCTS365MS
Die Characteristics
DIE DIMENSIONS:
108 x 106 mils
METALLIZATION:
Type: AlSi
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
HCTS365MS
Y1
(3)
A1
(2)
OE1
(1)
OE2
(15)
VCC
(16)
NC
A2 (4)
Y2 (5)
(14) A6
(13) Y6
NC
(12) A5
(11) Y5
A3 (6)
(9)
Y4
(10)
A4
NC
(7)
Y3
(8)
NC
GND
NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS365 is TA14413A.
Spec Number 518637
10
相关型号：
©2020 ICPDF网 联系我们和版权申明