HCTS390DMSR_技术文档

HCTS390MS

Radiation Hardened

Dual Decade Ripple Counter

September 1995

Features

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm²/mg

• Single Event Upset (SEU) Immunity < 2 x 10^-9Errors/

Bit-Day (Typ)

CP0N 1

MR 1

Q0 1

1

2

3

4

5

6

7

8

16 VCC

15 CP0N 2

14 MR 2

13 Q0 2

• Dose Rate Survivability: >1 x 10¹²RAD (Si)/s

• Dose Rate Upset >10¹⁰RAD (Si)/s 20ns Pulse

• Latch-Up Free Under Any Conditions

CP1N 1

Q1 1

12 CP1N 2

11 Q1 2

Q2 1

• Military Temperature Range: -55^oC to +125^oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

10 Q2 2

Q3 1

9

Q3 2

GND

- VIL = 0.8V Max

- VIH = 2.0V Min

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16

TOP VIEW

• Input Current Levels Ii ≤ 5µA at VOL, VOH

CP0N 1

MR 1

Q0 1

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

VCC

Description

CP0N 2

MR 2

Q0 2

The Intersil HCTS390MS is a Radiation Hardened dual

decade ripple counter.

CP1N 1

Q1 1

CP1N 2

Q1 2

The HCTS390MS utilizes advanced CMOS/SOS technology

to achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family .

Q2 1

Q3 1

Q2 2

GND

Q3 2

The HCTS390MS is supplied in a 16 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

PART NUMBER

HCTS390DMSR

TEMPERATURE RANGE

SCREENING LEVEL

PACKAGE

16 Lead SBDIP

o

-55 C to +125 C

Intersil Class S Equivalent

o

HCTS390KMSR

-55 C to +125 C

Intersil Class S Equivalent

16 Lead Ceramic Flatpack

16 Lead SBDIP

o

HCTS390D/Sample

HCTS390K/Sample

HCTS390HMSR

+25 C

Sample

Die

o

+25 C

16 Lead Ceramic Flatpack

Die

o

+25 C

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Spec Number 518634

File Number 2476.2

662

HCTS390MS

Functional Diagram

4(12)

nCP1

1(15)

nCP0

Q

φ

R

2(14)

nMR

3(13)

nQ0

5(11)

nQ1

6(10)

7(9)

nQ2

nQ3

TRUTH TABLE

INPUTS

CP

MR

L

ACTION

No Change

Count

L

H

All Qs Low

H = High Level

L = Low Logic Level

X = Immaterial

= Low-to-High

= High-to-Low

Spec Number 518634

663

Speciﬁcations HCTS390MS

Absolute Maximum Ratings

Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Thermal Resistance

SBDIP Package. . . . . . . . . . . . . . . . . . . .

Ceramic Flatpack Package . . . . . . . . . . . 114 C/W

Maximum Package Power Dissipation at +125 C Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat

sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/ C

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/ C

θ

JA

JC

o

73 C/W

24 C/W

o

29 C/W

o

Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C

o

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265 C

o

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C

o

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

o

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent

damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed

under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC

o

Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C

A

Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . . . .500ns Max

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

A SUB-

LIMITS

(NOTE 1)

PARAMETER

SYMBOL

CONDITIONS

GROUPS

TEMPERATURE

MIN

MAX

UNITS

µA

o

Quiescent Current

ICC

VCC = 5.5V,

VIN = VCC or GND

1

2, 3

1

+25 C

-

40

o

+125 C, -55 C

-

750

µA

o

Output Current

(Sink)

IOL

IOH

VOL

VCC = 4.5V, VIH = 4.5V,

VOUT = 0.4V, VIL = 0V

(Standard Driver)

+25 C

4.8

4.0

-4.8

-4.0

-

mA

V

o

2, 3

1

+125 C, -55 C

-

o

Output Current

(Source)

VCC = 4.5V, VIH = 4.5V,

VOUT = VCC - 0.4V,

VIL = 0V (Standard Driver)

+25 C

o

2, 3

1, 2, 3

+125 C, -55 C

-

o

Output Voltage Low

VCC = 4.5V, VIH = 2.25V,

+25 C, +125 C, -55 C

0.1

IOL = 50µA, VIL = 0.8V

o

VCC = 5.5V, VIH = 2.75V,

IOL = 50µA, VIL = 0.8V

1, 2, 3

+25 C, +125 C, -55 C

-

0.1

V

o

Output Voltage High

VOH

VCC = 4.5V, VIH = 2.25V,

IOH = -50µA, VIL = 0.8V

+25 C, +125 C, -55 C

VCC

-0.1

-

o

VCC = 5.5V, VIH = 2.75V,

IOH = -50µA, VIL = 0.8V

+25 C, +125 C, -55 C

VCC

-0.1

o

Input Leakage

Current

IIN

FN

VCC = 5.5V, VIN = VCC or

GND

1

+25 C

-

±0.5

±5.0

-

µA

-

o

2, 3

+125 C, -55 C

o

Noise Immunity

Functional Test

VCC = 4.5V, VIH = 2.25V,

VIL = 0.80V (Note 2)

7, 8A, 8B

+25 C, +125 C, -55 C

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

Spec Number 518634

664

Speciﬁcations HCTS390MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

LIMITS

MIN

(NOTES 1, 2)

A SUB-

PARAMETER

SYMBOL

CONDITIONS

GROUPS

TEMPERATURE

MAX

22

27

29

35

34

41

29

35

23

29

UNITS

ns

o

CP0N to Q0n

TPHL

TPLH

VCC = 4.5V

9

10, 11

9

+25 C

2

o

+125 C, -55 C

ns

o

CP1Nn to Q1n

CP1Nn to Q2n

CP1Nn to Q3n

MR to QNn

TPHL

TPLH

VCC = 4.5V

+25 C

ns

o

10, 11

9

+125 C, -55 C

ns

o

TPHL

TPLH

+25 C

ns

o

10, 11

9

+125 C, -55 C

ns

o

TPHL

TPLH

+25 C

ns

o

10, 11

9

+125 C, -55 C

ns

o

TPHL

+25 C

ns

o

10, 11

+125 C, -55 C

ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER

SYMBOL

CONDITIONS

NOTES

1, 2, 3

TEMPERATURE

MIN

-

MAX

50

56

10

15

22

27

18

-

UNITS

pF

o

Capacitance Power

Dissipation

CPD

VCC = 5.0V, f = 1MHz

+25 C

o

+125 C, -55 C

-

pF

o

Input Capacitance

CIN

VCC = 5.0V, f = 1MHz

VCC = 4.5V

+25 C

-

pF

o

+125 C

-

pF

o

Output Transition

Time

TTHL

TTLH

+25 C

-

ns

o

+125 C

-

ns

o

Max Operating

Frequency

FMAX

TW

VCC = 4.5V

+25 C

-

MHz

ns

o

+125 C, -55 C

-

o

PulseWidthCP0Nn,

CP1Nn

VCC = 4.5V

+25 C

15

22

13

20

15

22

o

+125 C, -55 C

-

ns

o

Pulse Width Reset

TW

VCC = 4.5V

+25 C

-

ns

o

+125 C, -55 C

-

ns

o

Removal Time

Reset

TREM

VCC = 4.5V

+25 C

-

ns

o

+125 C, -55 C

-

ns

NOTES:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly

tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

2. Applies to DIC packaged devices.

3. Applies to Flatpack packaged devices.

Spec Number 518634

665

Speciﬁcations HCTS390MS

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

200K RAD

LIMITS

(NOTES 1, 2)

PARAMETER

Quiescent Current

Output Current (Sink)

SYMBOL

ICC

CONDITIONS

TEMPERATURE

MIN

MAX

0.75

-

UNITS

mA

o

VCC = 5.5V, VIN = VCC or GND

+25 C

-

o

IOL

VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

+25 C

4.0

mA

o

Output Current

(Source)

IOH

VOL

VOH

VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

+25 C

-4.0

-

0.1

-

mA

V

o

Output Voltage Low

Output Voltage High

Input Leakage Current

VCC = 4.5V and 5.5V, VIH = VCC/2,

VIL = 0.80V, IOL = 50µA

+25 C

o

VCC = 4.5V and 5.5V, VIH = VCC/2,

VIL = 0.80V, IOL = -50µA

+25 C

VCC

-0.1

V

o

IIN

FN

VCC = 5.5V, VIN = VCC or GND

+25 C

-

±5

µA

o

Noise Immunity

Functional Test

VCC = 4.5V, VIH = 2.25V, VIL = 0.80V,

(Note 3)

+25 C

-

o

CP0Nn to Q0n

CP1Nn to Q1n

CP1Nn to Q2n

CP1Nn to Q3n

TPHL

TPLH

VCC = 4.5V

+25 C

2

27

35

41

35

29

ns

o

TPHL

TPLH

+25 C

o

TPHL

TPLH

+25 C

o

TPHL

TPLH

+25 C

o

MR to Qn

NOTES:

TPHL

+25 C

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

o

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 C)

GROUP B

PARAMETER

SUBGROUP

DELTA LIMIT

12µA

ICC

IOL/IOH

5

-15% of 0 Hour

Spec Number 518634

666

Speciﬁcations HCTS390MS

TABLE 6. APPLICABLE SUBGROUPS

CONFORMANCE GROUPS

Initial Test (Preburn-In)

METHOD

100%/5004

Sample/5005

GROUP A SUBGROUPS

READ AND RECORD

ICC, IOL/H

1, 7, 9

Interim Test I (Postburn-In)

Interim Test II (Postburn-In)

PDA

ICC, IOL/H

1, 7, 9

1, 7, 9, Deltas

1, 7, 9

Interim Test III (Postburn-In)

PDA

ICC, IOL/H

1, 7, 9, Deltas

2, 3, 8A, 8B, 10, 11

1, 2, 3, 7, 8A, 8B, 9, 10, 11

1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas

1, 7, 9

Final Test

Group A (Note 1)

Group B

Subgroup B-5

Subgroup B-6

Subgroups 1, 2, 3, 9, 10, 11

Group D

1, 7, 9

NOTE: 1. Alternate Group A in accordance with Method 5005 of MIL-STD-883 may be exercised.

TABLE 7. TOTAL DOSE IRRADIATION

TEST

READ AND RECORD

CONFORMANCE

GROUPS

METHOD

PRE RAD

POST RAD

PRE RAD

1, 7, 9

POST RAD

Group E Subgroup 2

5005

1, 7, 9

Table 4

Table 4 (Note 1)

NOTE: 1. Except FN test which will be performed 100% Go/No-Go.

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS

OSCILLATOR

OPEN

GROUND

1/2 VCC = 3V ± 0.5V

VCC = 6V ± 0.5V

50kHz

25kHz

STATIC BURN-IN I TEST CONNECTIONS (Note 1)

3, 5 - 7, 9 - 11, 13 1, 2, 4, 8,12, 14, 15

-

16

-

STATIC BURN-IN II TEST CONNECTIONS (Note 1)

3, 5 - 7, 9 - 11, 13

DYNAMIC BURN-IN TEST CONNECTIONS (Note 2)

3, 5 - 7, 9 - 11, 13

8

1, 2, 4, 12, 14 - 16

2, 14, 16

-

8

1, 4, 12, 15

NOTES:

1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in

2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in

TABLE 9. IRRADIATION TEST CONNECTIONS

OPEN

GROUND

VCC = 5V ± 0.5V

1, 2, 4, 12, 14 - 16

3, 5 - 7, 9 - 11, 13

8

NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.

Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.

Spec Number 518634

667

HCTS390MS

Intersil Space Level Product Flow - ‘MS’

Wafer Lot Acceptance (All Lots) Method 5007

(Includes SEM)

100% Interim Electrical Test 1 (T1)

100% Delta Calculation (T0-T1)

GAMMA Radiation Veriﬁcation (Each Wafer) Method 1019,

4 Samples/Wafer, 0 Rejects

100% Static Burn-In 2, Condition A or B, 24 hrs. min.,

+125^oC min., Method 1015

100% Nondestructive Bond Pull, Method 2023

Sample - Wire Bond Pull Monitor, Method 2011

Sample - Die Shear Monitor, Method 2019 or 2027

100% Internal Visual Inspection, Method 2010, Condition A

100% Interim Electrical Test 2 (T2)

100% Delta Calculation (T0-T2)

100% PDA 1, Method 5004 (Notes 1and 2)

100% Dynamic Burn-In, Condition D, 240 hrs., +125^oC or

100% Temperature Cycle, Method 1010, Condition C,

10 Cycles

Equivalent, Method 1015

100% Interim Electrical Test 3 (T3)

100% Delta Calculation (T0-T3)

100% Constant Acceleration, Method 2001, Condition per

Method 5004

100% PDA 2, Method 5004 (Note 2)

100% Final Electrical Test

100% PIND, Method 2020, Condition A

100% External Visual

100% Fine/Gross Leak, Method 1014

100% Radiographic, Method 2012 (Note 3)

100% External Visual, Method 2009

Sample - Group A, Method 5005 (Note 4)

100% Data Package Generation (Note 5)

100% Serialization

100% Initial Electrical Test (T0)

100% Static Burn-In 1, Condition A or B, 24 hrs. min.,

+125^oC min., Method 1015

NOTES:

1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.

2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the

failures from subgroup 7.

3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.

4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.

5. Data Package Contents:

• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,

Quantity).

• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.

• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Speciﬁcation Numbers, Test

equipment, etc. Radiation Read and Record data on ﬁle at Intersil.

• X-Ray report and ﬁlm. Includes penetrometer measurements.

• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).

• Lot Serial Number Sheet (Good units serial number and lot number).

• Variables Data (All Delta operations). Data is identiﬁed by serial number. Data header includes lot number and date of test.

• The Certiﬁcate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certiﬁcate of Conformance is signed

by an authorized Quality Representative.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate

and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Spec Number 518634

668

HCTS390MS

AC Timing Diagrams

INPUT

LEVEL

TR

TF

VS

CP

INPUT

LEVEL

TREM

VS

TW

VS

CP

MR

VS

TPLH

TW

TPHL

Q0

VS

Q0

VS

FIGURE 1. INPUT PULSE PRE-REQUISITE, PROPAGATION-

DELAY, AND OUTPUT-TRANSITION TIMES

FIGURE 2. MASTER RESET PRE-REQUISITE AND PROPAGA-

TION DELAYS

AC VOLTAGE LEVELS

PARAMETER

VCC

HCTS

4.50

3.00

1.30

0

UNITS

V

VIH

VS

TTLH

TTHL

VOH

VOL

80%

20%

OUTPUT

VIL

VSS

0

FIGURE 3. OUTPUT TRANSITION TIME

AC Load Circuit

DUT

TEST

POINT

CL

RL

CL = 50pF

RL = 500Ω

Spec Number 518634

669

HCTS390MS

Die Characteristics

DIE DIMENSIONS:

86 x 86 mils

2190µm x 2190µm

METALLIZATION:

Type: SiAl

Metal Thickness: 11kÅ ± 1kÅ

GLASSIVATION:

Type: SiO₂

Thickness: 13kÅ ± 2.6kÅ

WORST CASE CURRENT DENSITY:

<2.0 x 10⁵A/cm²

BOND PAD SIZE:

100µm x 100µm

4 mils x 4 mils

Metallization Mask Layout

HCTS390MS

(14) MR 2

(2) MR1

Q0 1 (3)

(13) Q0 2

CP1N1 (4)

(12) CP1N 2

(11) Q1 2

(10) Q2 2

Q1 (5)

Q2 (6)

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.

The mask series for the HCTS390 is TA14489A.

Spec Number 518634

670


型号：	HCTS390DMSR
厂家：	Intersil
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