HGTA32N60E2 [INTERSIL]
32A, 600V N-Channel IGBT; 32A ， 600V N沟道IGBT
| 型号： | HGTA32N60E2 |
| 厂家： | 
Intersil |
| 描述： | 32A, 600V N-Channel IGBT |
| 文件： | 总4页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTA32N60E2
32A, 600V N-Channel IGBT
April 1995
Features
Package
JEDEC MO-093AA (5 LEAD TO-218)
• 32A, 600V
• Latch Free Operation
• Typical Fall Time 620ns
• High Input Impedance
• Low Conduction Loss
5 EMITTER
4 EMITTER KELVIN
3 COLLECTOR
2 NO CONNECTION
COLLECTOR
(FLANGE)
1 GATE
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
G
EMITTER
KELVIN
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
TO-218
BRAND
E
HGTA32N60E2
GA32N60E2
NOTE: When ordering, use the entire part number.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTA32N60E2
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
600
50
32
200
±20
±30
V
V
A
A
A
V
V
-
CES
CGR
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
C25
C90
o
at V = 15V at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . .I
GE
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
Switching Sage Operating Area T = +150 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200A at 0.8 BV
J
CES
o
208
1.67
-55 to +150
W
C
D
o
o
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
260
3
15
L
SC
SC
Short Circuit Withstand Time (Note 2) at V = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
µs
µs
GE
at V = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
GE
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junctions temperature.
o
2. V
= 360V, T = +125 C, R = 25Ω.
C GE
CE(PEAK)
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2833.3
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-116
Specifications HGTA32N60E2
o
Electrical Specifications T = +25 C, Unless Otherwise Specified
C
LIMITS
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
MIN
TYP
-
MAX
-
UNITS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
I
= 250µA, V = 0V
600
V
µA
mA
V
CES
C
GE
o
I
V
V
= BV
T
T
T
T
T
= +25 C
-
-
250
4.0
2.9
3.0
6.0
CES
CE
CE
CES
C
C
C
C
C
o
= 0.8 BV
= +125 C
-
-
-
CES
o
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
V
I
= I ,
C90
= 15V
= +25 C
2.4
2.4
4.5
CE(SAT)
C
V
GE
o
= +125 C
-
V
o
V
I
= 1.0mA,
= +25 C
3.0
V
GE(TH)
C
V
= V
GE
CE
GE
Gate-Emitter Leakage Current
Gate-Emitter Plateau Voltage
On-State Gate Charge
I
V
= ±20V
-
-
-
-
-
-
-
-
-
-
-
±500
-
nA
V
GES
V
I
I
= I , V = 0.5 BV
6.5
200
265
100
150
630
620
3.5
0.5
GEP
C
C90
CE
CES
Q
= I
,
V
V
= 15V
= 20V
260
345
-
nC
nC
ns
ns
ns
ns
mJ
G(ON)
C
C90
GE
GE
V
= 0.5 BV
CES
CE
Current Turn-On Delay Time
Current Rise Time
t
L = 500µH, I = I , R = 25Ω,
C C90 G
V
V
D(ON)I
o
= 15V, T = +125 C,
GE
CE
J
t
= 0.8 BV
-
RI
CES
Current Turn-Off Delay Time
Current Fall Time
t
820
800
-
D(OFF)I
t
FI
Turn-Off Energy (Note 1)
Thermal Resistance
NOTE:
W
R
OFF
o
0.6
C/W
θJC
1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Meth-
CE
od for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
100
90
100
VGE = 15V
VGE = 8.0V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 15V
VGE = 10V
80
70
60
50
40
30
80
60
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = +25oC
VGE = 7.5V
VGE = 7.0V
TC = +150oC
TC = +25oC
TC = -40oC
40
VGE = 6.5V
VGE = 6.0V
VGE = 5.5V
20
0
20
10
0
0
2
4
6
8
10
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-117
HGTA32N60E2
Typical Performance Curves (Continued)
60
1.0
VGE = 10V AND 15V
TJ = +150oC, RG = 25Ω
L = 50µH
VGE = 15V
VCE = 240V
50
40
0.8
0.6
0.4
0.2
0.0
VGE = 10V
VCE = 480V
30
20
10
0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
100
+25
+50
+75
+100
+125
+150
TC, CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
R
L = 12Ω
12000
I
G(REF) = 2.75mA
VGE = 10V
f = 1MHz
GATE-
EMITTER
VOLTAGE
600
10
10000
VCC = BVCES
VCC = BVCES
CISS
8000
6000
4000
2000
0
450
300
150
5
0.75 BVCES
0.75 BVCES
0.50 BVCES
0.25 BVCES
0.50 BVCES
0.25 BVCES
COSS
CRSS
COLLECTOR-EMITTER VOLTAGE
0
0
0
5
10
15
20
25
IG(REF)
IG(REF)
20
80
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IG(ACT)
IG(ACT)
TIME (µs)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
20
6
TJ = +150oC
TJ = +150oC
10
RG = 25Ω
5
L = 50µH
VGE = 10V
4
VCE = 480V, VGE = 10V, 15V
3
1.0
VGE = 15V
2
V
CE = 240V, VGE = 10V, 15V
1
0
0.1
1
10
100
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
100
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
3-118
HGTA32N60E2
Typical Performance Curves (Continued)
100
1.5
TJ = +150oC
CE = 480V
L = 50µH
VCE = 240V
V
VCE = 480V
1.0
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
10
PC = DUTY FACTOR = 50%
R
θJC = 0.5oC/W
V
GE = 15V, RG = 50Ω
0.5
0.0
VGE = 10V, RG = 50Ω
VGE = 15V, RG = 25Ω
VGE = 10V, RG = 25Ω
TJ = +150oC, VGE = 15V
RG = 25Ω, L = 50µH
1
1
10
100
1
10
CE, COLLECTOR-EMITTER CURRENT (A)
100
ICE, COLLECTOR-EMITTER CURRENT (A)
NOTE:
I
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
frequency limiting condition for an application other than
T
JMAX. tD(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable
dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The
sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 10) so that
the conduction losses (PC) can be approximated by PC
=
(VCE x ICE)/2. WOFF is defined as the sum of the instanta-
neous power loss starting at the trailing edge of the input
pulse and ending at the point where the collector current
equals zero (ICE - 0A).
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I is defined as the time between the 90%
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional
The switching power loss (Figure 10) is defined as fMAX1
x
WOFF. Turn on switching losses are not included because
they can be greatly influenced by external circuit conditions
and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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3-119
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