HGTP10N40E1D [INTERSIL]
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes; 10A ， 400V和500V N沟道IGBT的与反并联二极管超快
| 型号： | HGTP10N40E1D |
| 厂家： | 
Intersil |
| 描述： | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 文件： | 总6页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
April 1995
Features
Package
JEDEC TO-220AB
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
EMITTER
COLLECTOR
GATE
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
• Protective Circuits
C
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
HGTP10N40C1D
HGTP10N40E1D
HGTP10N50C1D
HGTP10N50E1D
PACKAGE
TO-220AB
TO-220AB
TO-220AB
TO-220AB
BRAND
10N40C1D
10N40E1D
10N50C1D
10N50E1D
NOTE: When ordering, use the entire part number.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTP10N40C1D
HGTP10N50C1D
HGTP10N40E1D
HGTP10N50E1D
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
400
500
500
V
V
V
A
CES
Collector-Gate Voltage R = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
CGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
±20
GE
C25
C90
o
Collector Current Continuous at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . I
17.5
17.5
C
o
at T = +90 C . . . . . . . . . . . . . . . . . . . . . . . . . I
10
10
C
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
75
W
C
D
o
o
Power Dissipation Derating T > +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T , T
-55 to +150
-55 to +150
C
J
STG
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 2405.5
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
o
Electrical Specifications T = +25 C, Unless Otherwise Specified
C
LIMITS
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0
MIN
MAX
-
MIN
MAX
-
UNITS
V
Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
I
400
500
CES
C
GE
V
V
V
V
V
V
V
= V , I = 1mA
2.0
4.5
2.0
4.5
V
GE(TH)
GE
CE
CE
CE
CE
GE
CE
C
o
Zero Gate Voltage Collector Current
I
= 400V, T = +25 C
-
-
-
-
-
-
-
-
-
-
-
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
µA
µA
µA
nA
V
CES
C
o
= 500V, T = +25 C
250
-
C
o
= 400V, T = +125 C
1000
-
C
o
= 500V, T = +125 C
1000
100
2.5
C
Gate-Emitter Leakage Current
Collector-Emitter On Voltage
I
= ±20V, V = 0
100
2.5
GES
CE
V
I
I
I
I
I
= 10A, V = 10V
GE
CE(ON)
C
C
C
C
C
= 17.5A, V = 20V
3.2
3.2
V
GE
Gate-Emitter Plateau Voltage
On-State Gate Charge
Turn-On Delay Time
Rise Time
V
= 5A, V = 10V
6 (Typ)
19 (Typ)
50
6 (Typ)
19 (Typ)
50
V
GEP
CE
Q
= 5A, V = 10V
nC
ns
ns
ns
G(ON)
D(ON)I
CE
t
= 10A, V
L = 50µH, T = +100 C,
= 300V,
CE(CLP)
o
J
t
V
= 10V, R = 50Ω
50
50
RI
GE
G
Turn-Off Delay Time
Fall Time
t
400
400
D(OFF)I
t
FI
40E1D, 50E1D
680 (Typ)
400 (Typ)
1000
500
680 (Typ)
400 (Typ)
1000
500
ns
ns
40C1D, 50C1D
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
W
I
= 10A, V
= 300V,
CE(CLP)
OFF
C
o
L = 50µH, T = +100 C,
J
W
x Frequency)
V
= 10V, R = 50Ω
OFF
GE G
40E1D, 50E1D
40C1D, 50C1D
1810 (Typ)
1070 (Typ)
µJ
µJ
o
Thermal Resistance Junction-to-Case
Diode Forward Voltage
R
-
-
-
1.67
-
-
-
1.67
2
C/W
θJC
V
I
I
= 10A
2
V
EC
RR
EC
Diode Reverse Recovery Time
t
= 10A, di/dt = 100A/µs
100
100
ns
EC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
3-21
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves
20.0
17.5
15.0
12.5
10.0
7.5
VGE = 10V, RGEN = RGS = 100Ω
100
80
60
40
20
5.0
2.5
0
-75 -50 -25
0
+25 +50 +75 +100 +125 +150 +175
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. R = 50Ω,
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-
ING CURVE
G
V
= 0V ARE THE MIN. ALLOWABLE VALUES
GE
35
PULSE TEST, VCE = 10V
VGE = VCE, IC = 1mA
PULSE DURATION = 80µs
1.3
1.2
1.1
1.0
0.9
0.8
0.7
30
DUTY CYCLE = 0.5% MAX.
25
20
15
10
-40oC
+25oC
+125oC
5
0
-50
0
+50
+100
+150
0
2.5
5.0
7.5
10.0
TJ, JUNCTION TEMPERATURE (oC)
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
TC = +25oC
VGE = 7V
35
35
30
25
20
15
10
5
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
VGE = 20V
VGE = 10V
VGE = 8V
30
DUTY CYCLE = 0.5% MAX.
VGE = 6V
25
20
+25oC
15
VGE = 5V
10
5
VGE = 4V
0
0
0
1
2
3
4
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICALCOLLECTOR-TO-EMITTERON-VOLTAGE
vs COLLECTOR CURRENT
3-22
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves (Continued)
1200
1000
800
600
400
200
0
3.00
2.75
2.50
2.25
f = 0.1MHz
IC = 10A, VGE = 10V
IC = 10A, VGE = 15V
CISS
2.00
1.75
IC = 5A, VGE = 10V
IC = 5A, VGE = 15V
COSS
CRSS
1.50
0
10
20
30
40
50
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
vs TEMPERATURE
CE(ON)
400
IC = 20A, VGE = 10V, VCL = 300V
WOFF = ∫ IC * VCEdt
L =25µH, RG = 25Ω
VGE
IC
300
VCE
200
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
700
600
500
400
300
200
100
0
800
IC = 10A, VGE = 10V, VCL = 300V
IC = 5A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
L = 50µH, RG = 50Ω
700
600
500
400
300
200
100
0
40E1/50E1
40E1/50E1
40C1/50C1
40C1/50C1
+25
+50
+75
+100
+125
+150
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (I = 5A)
FIGURE 12. TYPICAL FALL TIME (I = 10A)
C
C
3-23
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves (Continued)
10
8
1000
500
VGE = 10V, VCE(CLP) = 300V
RL = 25Ω
I
G(REF) = 0.76mA
900
800
700
600
500
400
300
200
100
0
L = 25µH, RG = 25Ω
20A, 40E1/50E1
20A, 40C1/50C1
VGE = 10V
VCC = BVCES
GATE-
375
250
125
0
EMITTER
VOLTAGE
6
4
VCC = 0.25BVCES
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
10A, 40E1/50E1
2
0
10A, 40C1/50C1
COLLECTOR-EMITTER VOLTAGE
IG(REF)
IG(REF)
+25
+50
+75
+100
+125
+150
20
80
TIME (µs)
TJ, JUNCTION TEMPERATURE (oC)
IG(ACT)
IG(ACT)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260)
100
TYPICAL REVERSE RECOVERY TIME
TYPICAL DIODE ON VOLTAGE
60
50
40
10
TJ = +150oC
TJ = +100oC
dIEC/dT ≥ 100A/µs
30
R = 30V, TJ = +25oC
TJ = +25oC
TJ = -50oC
V
1
20
10
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
12
14
16
18
20
V
EC, EMITTER-COLLECTOR (V)
IEC, EMITTER-COLLECTOR CURRENT (A)
FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR
VOLTAGE vs CURRENT FOR ALL TYPES
FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR
ALL TYPES
Test Circuit
RL = 13Ω
L = 50µH
VCC
1/RG = 1/RGEN + 1/RGE
VCE(CLP)=
300V
RGEN = 100Ω
20V
0V
RGE = 100Ω
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-24
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
3-25
相关型号：
HGTP11N120CN9A
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明