HGTP3N60C3D
更新时间：2024-09-18 02:23:29
品牌：INTERSIL
描述：6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
概述
数据手册HGTP3N60C3D 概述
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 6A ， 600V ， UFS系列N沟道IGBT与反并联二极管超高速
HGTP3N60C3D 数据手册
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PDF下载HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet
January 2000
File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes
Features
o
• 6A, 600V at T = 25 C
C
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25 C and 150 C. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
o
o
Packaging
JEDEC TO-220AB
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
EMITTER
COLLECTOR
GATE
Formerly Developmental Type TA49119.
COLLECTOR (FLANGE)
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
G3N60C3D
G3N60C3D
HGTP3N60C3D
HGT1S3N60C3DS
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.
COLLECTOR
(FLANGE)
Symbol
GATE
EMITTER
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
1
HGTP3N60C3D, HGT1S3N60C3DS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTP3N60C3D, HGT1S3N60C3DS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
6
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
3
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
24
±20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
J
18A at 480V
33
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-40 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
Short Circuit Withstand Time (Note 2) at V
GE
= 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t
8
µs
SC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 82Ω.
J G
CE(PK)
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
-
MAX
-
UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
CES
I
600
V
µA
mA
V
C
GE
CES
CES
o
I
V
V
= BV
= BV
T
T
T
T
T
= 25 C
-
-
250
2.0
2.0
2.2
6.0
CES
CE
CE
C
C
C
C
C
o
= 150 C
-
-
-
o
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
V
I
V
= I
,
= 25 C
1.65
1.85
5.5
CE(SAT)
C C110
o
= 15V
GE
= 250µA,
C
= 150 C
-
V
o
V
I
= 25 C
3.0
V
GE(TH)
V
= V
CE
GE
Gate to Emitter Leakage Current
Switching SOA
I
V
= ±25V
-
-
-
-
±250
nA
A
GES
SSOA
GE
o
T = 150 C
V
V
= 480V
18
2
-
-
J
CE(PK)
R
= 82Ω
= 15V
G
= 600V
A
CE(PK)
V
GE
L = 1mH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= I
, V
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.3
10.8
13.8
5
-
13.5
17.3
-
V
nC
nC
ns
ns
ns
ns
µJ
µJ
V
GEP
C C110 CE
Q
IC = IC110,
VCE = 0.5 BVCES
V
= 15V
G(ON)
GE
V
= 20V
GE
o
Current Turn-On Delay Time
Current Rise Time
t
T = 150 C
d(ON)I
J
I
= I
CE
C110
= 0.8 BV
t
10
-
rI
V
V
R
CE(PK)
= 15V
CES
Current Turn-Off Delay Time
Current Fall Time
t
325
130
85
400
275
-
d(OFF)I
GE
t
= 82Ω
fI
G
L = 1mH
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
245
2.0
22
-
OFF
V
I
I
I
= 3A
2.5
28
22
3.75
3.0
EC
EC
EC
EC
t
= 3A, dI /dt = 200A/µs
EC
ns
ns
RR
= 1A, dI /dt = 200A/µs
EC
17
o
Thermal Resistance
NOTE:
R
IGBT
-
C/W
θJC
o
Diode
-
C/W
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard
CE
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.
2
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
20
20
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
PULSE DURATION = 250µs
= 10V
12V
18
16
14
12
18
16
14
12
10
8
DUTY CYCLE <0.5%
o
T
= 25 C
C
10V
V
= 15V
GE
10
8
o
9.0V
8.5V
T
T
T
= 150 C
C
C
C
o
= 25 C
6
6
o
= -40 C
4
4
8.0V
7.5V
2
0
2
7.0V
0
4
6
8
10
12
14
0
2
4
6
8
10
V
, GATE TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
CE
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
20
18
16
20
18
16
14
12
10
8
PULSE DURATION = 250µs
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
= 10V
DUTY CYCLE <0.5%, V
= 15V
GE
GE
o
T
= 25
C
14
12
10
8
C
o
= -40 C
T
C
o
T
= -40
C
C
o
T
= 150 C
C
6
6
o
o
T
C
= 150
C
T
= 25 C
C
4
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
7
14
12
10
8
70
60
50
40
30
20
o
V
= 15V
GE
V
= 360V, R = 82Ω, T = 125 C
G J
CE
6
5
4
3
2
1
0
t
SC
I
SC
6
4
10
0
2
0
25
50
75
100
125
150
10
11
12
13
14
15
o
T
, CASE TEMPERATURE ( C)
V
, GATE TO EMITTER VOLTAGE (V)
C
GE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
20
500
400
o
o
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
V
= 10V
= 15V
GE
10
300
200
V
GE
V
GE
= 15V
= 10V
V
GE
3
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
80
300
o
o
= 150 C, R = 82Ω, L = 1mH, V = 480V
CE(PK)
T
= 150 C, R = 82Ω, L = 1mH, V
= 480V
CE(PK)
J
G
T
J
G
V
= 10V
GE
200
V
= 10V or 15V
GE
V
= 15V
GE
10
5
100
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
0.8
0.5
o
= 150 C, R = 82Ω, L = 1mH, V = 480V
CE(PK)
o
= 150 C, R = 82Ω, L = 1mH, V
T
T
= 480V
J
G
J
G
CE(PK)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.3
0.2
0.1
0
V
= 10V
GE
V
= 10V or 15V
GE
V
= 15V
GE
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
200
20
18
16
14
12
10
8
o
o
o
T
= 150 C, V
= 15V, R = 82Ω, L = 1mH
J
GE G
T
= 150 C, T = 75 C
C
J
R
= 82Ω, L = 1mH
G
100
V
= 15V
GE
f
f
= 0.05/(t
D(OFF)I
+ t )
D(ON)I
MAX1
= (P - P )/(E
ON
+ E
)
OFF
MAX2
D
C
P
P
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
6
D
C
4
(DUTY FACTOR = 50%)
o
V
= 10V
5
GE
2
R
= 3.75 C/W
JC
θ
10
1
0
2
3
4
6
0
100
200
300
400
500
600
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
CE(PK)
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA
600
480
360
240
120
0
15
12
9
500
FREQUENCY = 1MHz
400
300
200
100
0
C
IES
V
= 600V
CE
V
V
= 400V
= 200V
CE
CE
6
I
= 1.060mA
C
G(REF)
OES
3
R
T
= 200Ω
L
o
C
= 25 C
RES
C
0
0
5
10
15
20
25
0
2
4
6
8
10
12
14
V
, COLLECTOR TO EMITTER VOLTAGE (V)
Q
, GATE CHARGE (nC)
CE
G
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
0
10
0.5
0.2
t
1
0.1
-1
10
P
D
0.05
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
JC C
SINGLE PULSE
J
D
JC
θ
θ
-2
10
-5
-4
10
-3
-2
10
-1
0
1
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
HGTP3N60C3D, HGT1S3N60C3DS
Typical Performance Curves (Continued)
15
12
9
30
25
20
15
10
5
o
T
= 25 C, dI /dt = 200A/µs
C
EC
t
rr
t
o
a
b
100 C
6
o
o
25 C
150 C
t
3
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
1
4
V
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
EC
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
90%
L = 1mH
RHRD460
10%
ON
V
V
GE
E
E
OFF
R
= 82Ω
G
CE
+
-
90%
V
= 480V
DD
10%
d(OFF)I
I
CE
t
t
rI
t
fI
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTP3N60C3D, HGT1S3N60C3DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as ECCOSORBD LD26 or equivalent.
are possible. t
and t
are defined in Figure 20.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM
C
θJC
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 13)
D
5. Gate Voltage Rating - Never exceed the gate-voltage
and the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON
shown in Figure 20. E
power loss (I
integral of the instantaneous power loss (I
CE
turn-off. All tail losses are included in the calculation for
E ; i.e., the collector current equals zero (I = 0).
OFF
is the integral of the instantaneous
ON
x V ) during turn-on and E
is the
CE
CE
OFF
x V ) during
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
CE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.
7
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| HGTP5N120BND | FAIRCHILD | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | 获取价格 |
|
| HGTP5N120BND | INTERSIL | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes | 获取价格 |
|
| HGTP5N120BND | RENESAS | 21A, 1200V, N-CHANNEL IGBT, TO-220AB | 获取价格 |
|
| HGTP5N120BND | ONSEMI | 1200V，NPT IGBT | 获取价格 |
|
| HGTP5N120CN | INTERSIL | 25A, 1200V, NPT Series N-Channel IGBT | 获取价格 |
|
| HGTP5N120CND | INTERSIL | 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | 获取价格 |
|
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