HS-201HSRH_06 [INTERSIL]

Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch; 抗辐射高速,四路SPST , CMOS模拟开关
HS-201HSRH_06
型号: HS-201HSRH_06
厂家: Intersil    Intersil
描述:

Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch
抗辐射高速,四路SPST , CMOS模拟开关

开关
文件: 总4页 (文件大小:239K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HS-201HSRH  
®
Data Sheet  
March 24, 2006  
FN4874.1  
Radiation Hardened High Speed, Quad  
SPST, CMOS Analog Switch  
Features  
• Electrically Screened to DSCC SMD 5962-99618  
The HS-201HSRH is a monolithic CMOS analog switch  
featuring power-off high input impedance, very fast switching  
speeds and low ON resistance. Fabrication on our DI RSG  
process assures SEL immunity and only very slight  
sensitivity to low dose rate (ELDRS). These Class V/Q  
devices are tested and guaranteed for 300krad (Si) total  
dose performance.  
• QML Qualified per MIL-PRF-38535  
• Radiation Performance  
- Guaranteed Total Dose Performance. . . . . 300krad (Si)  
- SEL Immune. . . . . . . . . . . . . . . . . . . . .DI RSG Process  
• Overvoltage Protection (Power On, Switch Off) . . . . . . ±30V  
• Power Off High Impedance . . . . . . . . . . . . . . . . . . . ±17V  
• Fast Switching Times  
Power-off high input impedance enables the use of this  
device in redundant circuits without causing data bus signal  
degradation. ESD protection, overvoltage protection, fast  
switching times, low ON resistance, and guaranteed  
radiation hardness, make the HS-201HSRH ideal for any  
space application where improved switching performance is  
required.  
- t  
- t  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110ns (Max)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80ns (Max)  
ON  
OFF  
• Low “ON” Resistance . . . . . . . . . . . . . . . . . . . 50(Max)  
• Pin Compatible with Industry Standard 201 Types  
• Operating Supply Range . . . . . . . . . . . . . . . . . ±10V to ±15V  
• Wide Analog Voltage Range (±15V Supplies) . . . . . . . ±15V  
• TTL Compatible  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center (DSCC). The SMD numbers  
listed here must be used when ordering flight units.  
Detailed electrical specifications for this device are  
contained in SMD 5962-99618. A ”hot-link” is provided  
on our homepage for downloading.  
Applications  
• High Speed Multiplexing  
• Sample and Hold Circuits  
• Digital Filters  
www.intersil.com/spacedefense/space.asp  
Pinout  
HS1-201HSRH, SBDIP (CDIP2-T16)  
HS9-201HSRH, FLATPACK (CDFP4-F16)  
TOP VIEW  
• Operational Amplifier Gain Switching Networks  
• Integrator Reset Circuits  
A1  
OUT1  
IN1  
1
2
3
4
5
6
7
8
16 A2  
15 OUT2  
14 IN2  
13 V+  
V-  
GND  
IN4  
12 NC  
11 IN3  
10 OUT3  
OUT4  
A4  
9
A3  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2000, 2006. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
HS-201HSRH  
Ordering Information  
INTERNAL  
TEMP. RANGE  
(°C)  
ORDERING NUMBER  
MKT. NUMBER  
PART MARKING  
Q 5962F9961801VEC  
Q 5962F9961801QEC  
Q 5962F9961801VXC  
Q 5962F9961801QXC  
-
PACKAGE  
16 Ld SBDIP  
16 Ld SBDIP  
16 Ld Flatpack  
16 Ld Flatpack  
-
PKG. DWG. #  
D16.3  
D16.3  
K16.A  
K16.A  
-
5962F9961801VEC  
5962F9961801QEC  
5962F9961801VXC  
5962F9961801QXC  
5962F9961801V9A  
HS1-201HSRH/PROTO  
HS9-201HSRH/PROTO  
HS1-201HSRH-Q  
HS1-201HSRH-8  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-201HSRH-Q  
HS9-201HSRH-8  
HS0-201HSRH-Q  
HS1-201HSRH/PROTO  
HS9-201HSRH/PROTO  
HS1-201HSRH/PROTO  
HS9-201HSRH/PROTO  
16 Ld SBDIP  
16 Ld Flatpack  
D16.3  
K16.A  
Die Characteristics  
DIE DIMENSIONS  
Backside Finish  
Silicon  
2790µm x 4950µm (110 mils x 195 mils)  
Thickness: 483µm ±25.4µm (19 mils ±1 mil)  
ASSEMBLY RELATED INFORMATION  
INTERFACE MATERIALS  
Glassivation  
Substrate Potential  
Unbiased (DI)  
Type: Phosphorus Silicon Glass (PSG)  
Thickness: 8.0kÅ +/-1.0kÅ  
ADDITIONAL INFORMATION  
Worst Case Current Density  
Metallization  
Type: Ti/AlCu  
Thickness: 16.0kÅ +/- 2kÅ  
5
2
<2.0 x 10 A/cm  
Transistor Count  
328  
Substrate  
Rad Hard Silicon Gate, Dielectric Isolation  
Metallization Mask Layout  
HS-201HSRH  
OUT4  
IN4  
GND  
V-  
IN1  
OUT1  
A1  
A2  
A4  
A3  
OUT3  
IN3  
V+  
IN2  
OUT2  
FN4874.1  
March 24, 2006  
2
HS-201HSRH  
Ceramic Metal Seal Flatpack Packages (Flatpack)  
K16.A MIL-STD-1835 CDFP4-F16 (F-5A, CONFIGURATION B)  
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE  
A
A
e
INCHES MILLIMETERS  
MIN  
PIN NO. 1  
ID AREA  
SYMBOL  
MAX  
0.115  
0.022  
0.019  
0.009  
0.006  
0.440  
0.285  
0.315  
-
MIN  
1.14  
0.38  
0.38  
0.10  
0.10  
-
MAX  
2.92  
0.56  
0.48  
0.23  
0.15  
11.18  
7.24  
8.00  
-
NOTES  
D
A
b
0.045  
0.015  
0.015  
0.004  
0.004  
-
-
-
-A-  
-B-  
S1  
b1  
c
-
-
b
c1  
D
-
E1  
3
-
0.004  
Q
H
A - B  
D
0.036  
H
A - B  
D
S
M
S
S
M
S
C
E
0.245  
6.22  
E
E1  
E2  
E3  
e
-
-
3
-
-D-  
A
0.130  
0.030  
3.30  
0.76  
-H-  
-C-  
-
-
7
-
L
E2  
L
E3  
E3  
0.050 BSC  
1.27 BSC  
SEATING AND  
BASE PLANE  
c1  
LEAD FINISH  
k
0.008  
0.250  
0.026  
0.005  
-
0.015  
0.370  
0.045  
-
0.20  
6.35  
0.66  
0.13  
-
0.38  
9.40  
1.14  
-
2
-
L
BASE  
METAL  
Q
S1  
M
N
8
6
-
(c)  
b1  
0.0015  
0.04  
M
M
(b)  
16  
16  
-
SECTION A-A  
Rev. 1 2-20-95  
NOTES:  
1. Index area: A notch or a pin one identification mark shall be locat-  
ed adjacent to pin one and shall be located within the shaded  
area shown. The manufacturer’s identification shall not be used  
as a pin one identification mark. Alternately, a tab (dimension k)  
may be used to identify pin one.  
2. If a pin one identification mark is used in addition to a tab, the lim-  
its of dimension k do not apply.  
3. This dimension allows for off-center lid, meniscus, and glass  
overrun.  
4. Dimensions b1 and c1 apply to lead base metal only. Dimension  
M applies to lead plating and finish thickness. The maximum lim-  
its of lead dimensions b and c or M shall be measured at the cen-  
troid of the finished lead surfaces, when solder dip or tin plate  
lead finish is applied.  
5. N is the maximum number of terminal positions.  
6. Measure dimension S1 at all four corners.  
7. For bottom-brazed lead packages, no organic or polymeric mate-  
rials shall be molded to the bottom of the package to cover the  
leads.  
8. Dimension Q shall be measured at the point of exit (beyond the  
meniscus) of the lead from the body. Dimension Q minimum  
shall be reduced by 0.0015 inch (0.038mm) maximum when sol-  
der dip lead finish is applied.  
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.  
10. Controlling dimension: INCH  
FN4874.1  
3
March 24, 2006  
HS-201HSRH  
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)  
c1 LEAD FINISH  
D16.3 MIL-STD-1835 CDIP2-T16 (D-2, CONFIGURATION C)  
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE  
-A-  
-D-  
E
INCHES MILLIMETERS  
MIN  
-
BASE  
(c)  
METAL  
SYMBOL  
MAX  
0.200  
0.026  
0.023  
0.065  
0.045  
0.018  
0.015  
0.840  
0.310  
MIN  
-
MAX  
5.08  
0.66  
0.58  
1.65  
1.14  
0.46  
0.38  
21.34  
7.87  
NOTES  
b1  
M
(b)  
A
b
-
M
A
0.014  
0.014  
0.045  
0.023  
0.008  
0.008  
-
0.36  
0.36  
1.14  
0.58  
0.20  
0.20  
-
2
-B-  
b1  
b2  
b3  
c
3
SECTION A-A  
S
S
S
D
bbb  
C
A - B  
-
D
4
BASE  
S2  
Q
PLANE  
2
-C-  
SEATING  
PLANE  
c1  
D
3
L
-
S1  
b2  
eA  
A A  
E
0.220  
5.59  
-
e
eA/2  
aaa M C A - B S D S  
b
c
e
0.100 BSC  
2.54 BSC  
-
eA  
eA/2  
L
0.300 BSC  
0.150 BSC  
7.62 BSC  
3.81 BSC  
-
ccc  
M
C A - B S D S  
-
NOTES:  
0.125  
0.200  
3.18  
5.08  
-
1. Index area: A notch or a pin one identification mark shall be locat-  
ed adjacent to pin one and shall be located within the shaded  
area shown. The manufacturer’s identification shall not be used  
as a pin one identification mark.  
2. The maximum limits of lead dimensions b and c or M shall be  
measured at the centroid of the finished lead surfaces, when  
solder dip or tin plate lead finish is applied.  
Q
0.015  
0.005  
0.005  
0.060  
0.38  
0.13  
0.13  
1.52  
5
S1  
S2  
α
-
-
-
-
6
7
o
o
o
o
90  
105  
90  
105  
-
aaa  
bbb  
ccc  
M
-
-
-
-
0.015  
0.030  
0.010  
0.0015  
-
-
-
-
0.38  
0.76  
0.25  
0.038  
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension  
-
M applies to lead plating and finish thickness.  
-
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a  
partial lead paddle. For this configuration dimension b3 replaces  
dimension b2.  
2
8
N
16  
16  
5. Dimension Q shall be measured from the seating plane to the  
Rev. 0 4/94  
base plane.  
6. Measure dimension S1 at all four corners.  
7. Measure dimension S2 from the top of the ceramic body to the  
nearest metallization or lead.  
8. N is the maximum number of terminal positions.  
9. Braze fillets shall be concave.  
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.  
11. Controlling dimension: INCH.  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN4874.1  
4
March 24, 2006  

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