HS-2520RH_01 [INTERSIL]
Radiation Hardened Uncompensated, High Slew Rate Operational Amplifier; 抗辐射未补偿，高压摆率运算放大器
| 型号： | HS-2520RH_01 |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Uncompensated, High Slew Rate Operational Amplifier |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-2520RH
TM
Data Sheet
July 2001
File Number 3599.3
Radiation Hardened Uncompensated,
High Slew Rate Operational Amplifier
Features
• Electrically Screened to SMD # 5962-95685
The HS-2520RH is a radiation hardened monolithic
operational amplifier which delivers an unsurpassed
combination of specifications for slew rate, bandwidth and
settling time. This dielectrically isolated amplifier is designed
for closed loop gains of 3 or greater without external
compensation. In addition, this high performance component
also provides low offset current and high input impedance.
• QML Qualified per MIL-PRF-38535 Requirements
• High Slew Rate . . . . . . . . . . .100V/µs Min, 120V/µs (Typ)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz(Min)
• Wide Gain Bandwidth . . . . . . . 10MHz Min, 20MHz (Typ)
• High Input Impedance . . . . . . . . 50MΩ Min, 100MΩ (Typ)
• Low Offset Current . . . . . . . . . . . . . 25nA Min, 10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns(Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
The 100V/µs (Min) slew rate and fast settling time of this
amplifier makes it an ideal component for pulse amplification
and data acquisition designs. To insure compliance with slew
rate and transient response specifications, all devices are
100% tested for AC performance characteristics over full
temperature. This device is a valuable component for RF
and video circuitry requiring wideband operation. For
accurate signal conditioning designs, the HS-2520RH
superior dynamic specifications are complemented by 25nA
(Max) offset current and offset voltage trim capability.
4
• Gamma Dose. . . . . . . . . . . . . . . . . . . . . . 1 x 10 RAD(Si)
Applications
• Data Acquisition Systems
• RF Amplifiers
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
• Video Amplifiers
• Signal Generators
• Pulse Amplifiers
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95685. A “hot-link” is provided
on our homepage for downloading.
Ordering Information
INTERNAL
MKT. NUMBER
TEMP. RANGE
www.intersil.com/spacedefense/space.asp
o
ORDERING NUMBER
HS0-2520RH-Q
( C)
HS0-2520RH-Q
HS2-2520RH-Q
HS7-2520RH-Q
HS7B-2520RH-Q
25
5962D9568501VGA
5962D9568501VPA
5962D9568501VPC
-55 to 125
-55 to 125
-55 to 125
Pinouts
HS7-2520RH (CERDIP) GDIP1-T8
OR
HS7B-2520RH (SBDIP) CDIP2-T8
TOP VIEW
HS2-2520RH (CAN) MACY1-X8
TOP VIEW
COMP
8
1
2
3
4
8
7
6
5
BAL
-IN
COMP
V+
BAL
1
3
7
5
V+
+
-
+
+IN
V-
OUT
BAL
2
6
OUT
IN-
BAL
IN+
4
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2001, All Rights Reserved
1
HS-2520RH
Timing Waveforms
VIN
VOUT
+
-
50
1.33K
667
50pF
FIGURE 1. SIMPLIFIED TEST CIRCUIT
+1.67V
INPUT
+67mV
0V
INPUT
-67mV
0V
-1.67V
+5V
OVERSHOOT
75%
+200mV
90%
OUTPUT
∆V
OUTPUT
25%
10%
-5V
SLEW
RATE
0V
∆T
RISE TIME
= ∆V/∆T
FIGURE 2. SLEW RATE WAVEFORM
FIGURE 3. TRANSIENT RESPONSE WAVEFORM
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
o
Typical Performance Curves T = 25 C, VSUPPLY = 15V, Unless Otherwise Specified
A
100
10
120
100
80
VS = 15
10K SOURCE RESISTANCE
0 SOURCE RESISTANCE
BIAS CURRENT
60
40
1.0
0.1
20
OFFSET CURRENT
0
THERMAL NOISE OF 10K RESISTOR
-20
100Hz
1kHz
10kHz
100kHz
1MHz
-50
-55
-25
0
25
50
o
75
100
125
TEMPERATURE ( C)
UPPER 3dB FREQUENCY, LOWER 3dB FREQUENCY (10Hz)
FIGURE 4. INPUT BIAS AND OFFSET CURRENT vs
TEMPERATURE
FIGURE 5. EQUIVALENT INPUT NOISE vs BANDWIDTH
2
HS-2520RH
o
Typical Performance Curves T = 25 C, VSUPPLY = 15V, Unless Otherwise Specified (Continued)
A
120
1.3
1.2
1.1
VS = 15
100
80
PHASE
GAIN
SLEW RATE
60
BANDWIDTH
SLEW RATE
1.0
0.9
40
BANDWIDTH
20
0.8
0.7
0
-20
10
100
1K
10K
100K
1M
10M
100M
-50
-55
-25
0
25
50
o
75
100
125
FREQUENCY (Hz)
TEMPERATURE ( C)
FIGURE 6. NORMALIZED AC PARAMETERS vs TEMPERATURE
1.1
FIGURE 7. OPEN-LOOP FREQUENCY AND PHASE RESPONSE
120
100
SLEW RATE
BANDWIDTH
0pF
80
60
1.0
BANDWIDTH
SLEW RATE
30pF
40
20
100pF
0.9
0.8
300pF
0
1000pF
-20
10
100
1K
10K
100K
1M
10
10M
10
15
20
SUPPLY VOLTAGE
FREQUENCY (Hz)
FIGURE 8. NORMALIZED AC PARAMETERS vs SUPPLY
FIGURE 9. OPEN-LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
BANDWIDTH CONTROL PIN TO GROUND
o
VOLTAGE AT 25 C
35
88
VS = 20
30
VS = 20
87
25
20
15
VS = 15
VS = 10
86
VS = 15
VS = 10
85
84
83
82
10
5
0
-50
-55
-25
0
25
50
o
75
100
125
10K
100K
1MEG
10MEG
TEMPERATURE ( C)
FREQUENCY (Hz)
FIGURE 10. OPEN-LOOP VOLTAGE GAIN vs TEMPERATURE
FIGURE 11. OUTPUT VOLTAGE SWING vs FREQUENCY
o
AT 25 C
3
HS-2520RH
o
Typical Performance Curves T = 25 C, VSUPPLY = 15V, Unless Otherwise Specified (Continued)
A
4.8
4.6
RL = 2kΩ
CL = 50pF
4.4
VS = 20
UPPER TRACE: INPUT; 1.67V/DIV 10
LOWER TRACE: OUTPUT; 5V/DIV
VS = 15
VS = 10
4.2
4.0
3.8
3.6
o
TA = 25 C
VS = +15V
-50
-55
-25
0
25
50
o
75
100
125
TEMPERATURE ( C)
HORIZONTAL = 100ns/DIV
FIGURE 13. VOLTAGE FOLLOWER PULSE RESPONSE
FIGURE 12. POWER SUPPLY CURRENT vs TEMPERATURE
1000
10
120
100
INPUT NOISE CURRENT
80
10
100
NEGATIVE SUPPLY
60
POSITIVE SUPPLY
INPUT NOISE VOLTAGE
40
20
0
10
1
1
0.1
100kHz
1kHz
10kHz
100kHz
1MHz
1
10
100
1K
10K
100K
FREQUENCY (Hz)
FREQUENCY (Hz)
FIGURE 14. POWER SUPPLY REJECTION RATIO vs
FREQUENCY
FIGURE 15. INPUT NOISE DENSITY vs FREQUENCY
Suggested VOS Adjustment
V+
20kΩ
RT
IN
OUT
BAL
V-
NOTE: Tested offset adjustment range is | VOS +1mV | minimum referred to output. Typical range is +20mV to -18mV with RT = 20kΩ.
4
HS-2520RH
Burn-In Circuits
HS7-2520 CERDIP
HS2-2520 METAL CAN
V+
C3
C1
D1
8
1
2
3
4
8
7
6
5
1
3
7
5
V+
-
R1
-
2
6
+
C1
D1
+
C3
V-
D2
C2
4
R1
C2
D2
V-
NOTES:
1. R1 = 1MΩ, 5%, 1/4W (Min)
NOTES:
6. R1 = 1MΩ, 5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. C3 = 0.01µF ( 10%)/Socket
7. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
8. C3 = 0.01µF ( 10%)/Socket
4. D1 = D2 = 1N4002 or equivalent (per board)
5. |(V+) - (V-)| = 31V
9. D1 = D2 = 1N4002 or equivalent (per board)
10. |(V+) - (V-)| = 31V
Irradiation Circuits
IRRADIATION CIRCUIT
C
1
2
3
4
BAL
-IN
COMP
8
7
6
5
V+
V1
1MΩ -5% (1/4W MIN)
C
+IN
OUT
BAL
V-
V 2
C
NOTES:
11. V1 = +15V 10%
12. V2 = -15V 10%
13. C = 0.1µF 10%
5
HS-2520RH
Schematic Diagram
OFFSET
OFFSET
R2B
V+
R2A
200
R21
200
R20
200
200
Q30
Q29
R12
2K
R2B
1.8K
R2A
1.8K
R11
4K
R9
1.1K
Q15
Q23
Q12A
R13
2K
Q28
Q3A Q3B
Q4A Q4B
R17
30
C1
Q16
1pF
R16
960
Q13B
Q11B
OUTPUT
R18
30
Q27
Q8
Q12B
BW
Q13A
Q11A
CONTROL
R15
11.13K
Q1A
Q2A
Q1B
Q7
+INPUT
R1A
1.68K
R1B
1.68K
Q2B
Q17
Q24
Q21A
Q21B
Q6
Q9
R6A
3K
R6B
3K
Q31
Q22
Q10
Q5B
Q5A
Q25
Q26
Q14
Q18
Q19
Q20
R3A
1.48K
R3B
1.48K
R19
1.48K
R10
740
V-
-INPUT
6
HS-2520RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
67 mils x 57 mils x 19 mils
(1700µm x 1440µm x 483µm)
Substrate Potential (Powered Up):
Unbiased
INTERFACE MATERIALS:
Glassivation:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Type: Nitride (Si3N4) over Silox (Si02, 5% Phos.)
Silox Thickness: 12kÅ 2kÅ
Nitride Thickness: 3.5kÅ 1.5kÅ
5
2
0.26 x 10 A/cm
Transistor Count:
Top Metallization:
40
Type: Al, 1% Cu
Thickness: 16kÅ 2kÅ
Substrate:
Bipolar Dielectric Isolation
Backside Finish:
Silicon
Metallization Mask Layout
HS-2520RH
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable.
However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
7
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