HS1-303RH-8 [INTERSIL]

Radiation Hardened CMOS Dual SPDT Analog Switch; 抗辐射CMOS双路SPDT模拟开关
HS1-303RH-8
型号: HS1-303RH-8
厂家: Intersil    Intersil
描述:

Radiation Hardened CMOS Dual SPDT Analog Switch
抗辐射CMOS双路SPDT模拟开关

开关 光电二极管
文件: 总2页 (文件大小:491K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HS-303RH  
TM  
Data Sheet  
November 2001  
File Number 9046  
Radiation Hardened  
CMOS Dual SPDT Analog Switch  
Features  
• QML, Per MIL-PRF-38535  
The HS-303RH analog switch is a monolithic device  
fabricated using Radiation Hardened CMOS technology and  
the Intersil dielectric isolation process for latch-up free  
operation. Improved total dose hardness is obtained by  
layout (thin oxide tabs extending to a channel stop) and  
processing (hardened gate oxide). This switch offers low-  
resistance switching performance for analog voltages up to  
the supply rails. “ON” resistance is low and stays reasonably  
constant over the full range of operating voltage and current.  
“ON” resistance also stays reasonably constant when  
exposed to radiation, being typically 30pre-rad and 35Ω  
post 100kRAD(Si). Break-before-make switching is  
controlled by 5V digital inputs.  
• Radiation Performance  
5
- Gamma Dose (γ) 1 x 10 RAD(Si)  
• No Latch-Up, Dielectrically Isolated Device Islands  
• Pin for Pin Compatible with Intersil HI-303 Series Analog  
Switches  
• Analog Signal Range 15V  
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)  
• Low r  
ON  
. . . . . . . . . . . . . . . . . . . . . . 60(Max, Post Rad)  
• Low Operating Power. . . . . . . . . . 100µA (Max, Post Rad)  
Pinouts  
Specifications  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center in Columbus (DSCC). The SMD  
numbers listed below must be used when ordering.  
HS1-303RH (SBDIP), CDIP2-T14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
NC  
S3  
Detailed Electrical Specifications for the HS-303RH are  
contained in SMD 5962-95813. A “hot-link” is provided from  
our website for downloading  
D3  
D1  
S1  
IN1  
GND  
8
V-  
Ordering Information  
TEMP.  
ORDERING  
NUMBER  
PART  
NUMBER  
RANGE  
( C)  
o
HS9-303RH (FLATPACK) CDFP3-F14  
TOP VIEW  
5962R9581301QCC  
5962R9581301QXC  
5962R9581301VCC  
5962R9581301VXC  
HS1-303RH/PROTO  
HS9-303RH/PROTO  
HS1-303RH-8  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-303RH-8  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
HS1-303RH-Q  
HS9-303RH-Q  
D3  
HS1-303RH/PROTO  
HS9-303RH/PROTO  
D1  
S1  
IN1  
GND  
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.  
Copyright © Intersil Americas Inc. 2001. All Rights Reserved  
1
HS-303RH  
Functional Diagram  
SBDIP TRUTH TABLE  
SW1AND SW2  
N
P
LOGIC  
SW3 AND SW4  
IN  
D
0
1
OFF  
ON  
ON  
OFF  
Die Characteristics  
DIE DIMENSIONS:  
PASSIVATION:  
(2130µm x 1930µm x 279µm ±25.4µm)  
84 x 76 x 11mils ±1mil  
Type: Silox (S O )  
i
Thickness: 8kÅ2±1kÅ  
METALLIZATION:  
WORST CASE CURRENT DENSITY:  
2
Type: Al  
< 2.0e5 A/cm  
Thickness: 12.5kÅ ±2kÅ  
TRANSISTOR COUNT:  
SUBSTRATE POTENTIAL:  
76  
Unbiased (DI)  
PROCESS:  
BACKSIDE FINISH:  
Metal Gate CMOS, Dielectric Isolation  
Gold  
Metallization Mask Layout  
HS-303RH-T  
D3  
D1  
S1  
D4  
D2  
S2  
IN1  
IN2  
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
2

相关型号:

HS1-303RH-Q

Radiation Hardened CMOS Dual SPDT Analog Switch
INTERSIL

HS1-303RH-T

Radiation Hardened CMOS Dual SPDT Analog Switch
INTERSIL

HS1-303RH/883S

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-303RH/PROTO

Radiation Hardened CMOS Dual SPDT Analog Switch
INTERSIL

HS1-303RH/SAMPLE

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-303RH883S

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-306RH

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-306RH-Q

HS1-306RH-Q
RENESAS

HS1-306RH/883S

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-306RH/SAMPLE

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-306RH883S

Radiation Hardened CMOS Analog Switches
INTERSIL

HS1-307RH

Radiation Hardened CMOS Analog Switches
INTERSIL