HS1-81C55RH-Q [INTERSIL]

Radiation Hardened 256 x 8 CMOS RAM; 抗辐射256 ×8 CMOS RAM
HS1-81C55RH-Q
型号: HS1-81C55RH-Q
厂家: INTERSIL CORPORATION    INTERSIL CORPORATION
描述:

Radiation Hardened 256 x 8 CMOS RAM
抗辐射256 ×8 CMOS RAM

内存集成电路 静态存储器 CD
文件: 总11页 (文件大小:113K)
下载:  下载PDF数据表文档文件

HS1-81C56RH

Radiation Hardened 256 x 8 CMOS RAM

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22 INTERSIL

HS1-81C56RH/SAMPLE

22 I/O, PIA-GENERAL PURPOSE, CDIP40, SIDE BRAZED, METAL SEALED, CERAMIC, DIP-40

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0 RENESAS

HS1-81C56RH-8

Radiation Hardened 256 x 8 CMOS RAM

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7 INTERSIL

HS1-81C56RH-Q

Radiation Hardened 256 x 8 CMOS RAM

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5 INTERSIL

HS1820A

Peripheral IC

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6 ETC

HS1820B

Peripheral IC

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7 ETC

HS18230

180 Amp Schottky Rectifier

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13 MICROSEMI

HS18230

180 Amp Schottky Rectifier

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16 MICROSEMI

HS18230_11

180 Amp Schottky Rectifier

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8 MICROSEMI

HS18230E3

Rectifier Diode, Schottky, 1 Phase, 1 Element, 180A, 30V V(RRM), Silicon,

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0 MICROSEMI

HS18230R

Rectifier Diode, Schottky, 1 Phase, 1 Element, 180A, 30V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-1

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0 MICROSEMI

HS-1825AEH

Radiation Hardened High-Speed, Dual Output PWM

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19 INTERSIL

HS-1825ARH

Radiation Hardened High-Speed, Dual Output PWM

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8 INTERSIL

HS-1825ARH

Radiation Hardened High-Speed, Dual Output PWM

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13 INTERSIL

HS-1825ARH_05

Radiation Hardened High-Speed, Dual Output PWM

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3 INTERSIL