HS2-2700RH-Q [INTERSIL]
Low Power, High Performance Radiation Hardened Operational Amplifier; 低功耗，高性能抗辐射运算放大器
| 型号： | HS2-2700RH-Q |
| 厂家： | 
Intersil |
| 描述： | Low Power, High Performance Radiation Hardened Operational Amplifier |
| 文件： | 总6页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-2700RH
Data Sheet
August 1999
File Number 3624.2
Low Power, High Performance Radiation
Hardened Operational Amplifier
Features
• Electrically Screened to SMD # 5962-95670
HS-2700RH is radiation hardened internally compensated
operational amplifiers which employ dielectric isolation to
achieve excellent DC and dynamic performance with very
low quiescent power consumption.
• QML Qualified per MIL-PRF-38535 Requirements
• Low Power Supply Current. . . . . . . . . . . . . . 150µA (Max)
90µA (Typ)
DC performance of the amplifier input is characterized by
high CMRR (106dB), low offset voltage (0.5mV), along with
low bias and offset current (5.0nA and 2.5nA respectively).
These input specifications, in conjunction with offset null
capability and open-loop gain of 300,000V/V, enable
HS-2700RH to provide accurate, high-gain signal
amplification. Gain bandwidth 1MHz and slew rate of 20V/µs
allow for processing of fast, wideband signals. Input and
output signal amplitudes of at least ±11V can be
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 86dB (Min)
106dB (Typ)
• Low Input Bias Current. . . . . . . . . . . . . . . . . . . 20nA (Min)
5nA (Typ)
• Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 10nA (Min)
2.5nA (Typ)
4
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . 1 x 10 RAD(Si)
accommodated while providing output drive capability of
10mA. For maximum reliability, the output is protected in the
event of short circuits to ground.
Applications
• High Gain Amplifier
• Instrumentation Amplifiers
• Active Filters
The amplifier operates from a wide range of supplies (±5.5V
to ±20V) with a maximum quiescent supply drain of only
150µA. HS-2700RH is therefore, ideally suited to low-power
instrumentation and filtering applications that require fast,
accurate response over a wide range of signal frequency.
• Telemetry Systems
• Battery-Powered Equipment
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Ordering Information
INTERNAL
MKT. NUMBER
TEMP. RANGE
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95670. A “hot-link” is provided
on our homepage for downloading.
o
ORDERING NUMBER
5962D9567002VCA
5962D9567002VCC
5962D9567002VGA
( C)
HS1-2700RH-Q
HS1B-2700RH-Q
HS2-2700RH-Q
-55 to 125
-55 to 125
-55 to 125
www.intersil.com/spacedefense/space.asp
Pinouts
HS1-2700RH (CERDIP) GDIP1-T14
OR
HS1B-2700RH (SBDIP) CDIP2-T14
TOP VIEW
HS2-2700RH (CAN) MACY1-X8
TOP VIEW
BAL
8
NC
BAL
1
2
3
4
5
6
7
14 NC
13 NC
BAL
1
3
7
5
V+
GUARD
IN-
12 BAL
11 V+
-
+
2
6
OUT
IN-
-
+
IN+
10 OUTPUT
NC
IN+
GUARD
V-
9
8
NC
NC
4
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HS-2700RH
Test Circuit
ACOUT
1.6K
1
400
10K
-1/10
+VCC
V1
75pF (NOTE)
0.1
2
1 OPEN
S3A
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
2
50K
S1
OPEN 2
1
-
2
500K
V2
S5A
1
-1
-
+
DUT
+
S6
S5B
1
1
S2
OPEN 2
10K
1
-
S9
2
OPEN
+
S8
1
2
BUFFER
2
2
OPEN 1
S3B
VAC
100
1
2K
OPEN
x 2
0.1
1
-VEE
100
E
OUT
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
50K
NOTE: Includes stray capacitances.
Timing Waveforms
VIN
VOUT
+
-
1.6K
400
75pF
FIGURE 1. SIMPLIFIED TEST CIRCUIT
+1.0V
+40mV
0V
INPUT
INPUT
-40mV
0V
-1.0V
+4V
OVERSHOOT
+2.5V
+160mV
90%
∆V
OUTPUT
-4V
-2.5V
OUTPUT
10%
SLEW
RATE
0V
∆T
RISE TIME
= ∆V/∆T
FIGURE 2. SLEW RATE WAVEFORM
FIGURE 3. TRANSIENT RESPONSE WAVEFORM
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
2
HS-2700RH
o
Typical Performance Curves T = 25 C, VSUPPLY = ±15V, Unless Otherwise Specified
A
5
4
30
20
10
3
2
BIAS CURRENT
1
0
0
-10
-20
-1
-2
-3
-4
-5
OFFSET CURRENT
-55
-25
0
25
50
75
100
125
-55
-25
0
25
50
75
100
125
o
o
TEMPERATURE ( C)
TEMPERATURE ( C)
FIGURE 4. OFFSET VOLTAGE AS A FUNCTION OF
TEMPERATURE
FIGURE 5. INPUT BIAS CURRENT AND OFFSET CURRENT
AS A FUNCTION OF TEMPERATURE
500
10
VS = ±15.0V
9
400
VS = ±15.0V
o
o
T
= 25 C
A
T
= 25 C
A
8
7
6
5
4
3
2
1
0
300
200
100
0
-100
-200
-300
-400
-500
20
DIFFERENTIAL INPUT VOLTAGE (V)
25
0
10
5
15
-20
-15
-10
-5
0
5
10
15
20
COMMON MODE VOLTAGE (V)
FIGURE 6. BIAS CURRENT AS A FUNCTION OF COMMON
MODE VOLTAGE
FIGURE 7. BIAS CURRENT AS A FUNCTION OF
DIFFERENTIAL INPUT VOLTAGE
1000
150
VS = ±15.0V
900
VS = ±20.0V
o
T
= 25 C
A
VS = ±15.0V
VS = ±10.0V
VS = ±5.5V
120
90
800
700
600
500
400
300
200
100
0
60
30
0
-55
50
75
25
100
125
0
100
200
300
400
500
-25
0
o
DIFFERENTIAL INPUT VOLTAGE (mV)
TEMPERATURE ( C)
FIGURE 8. POWER SUPPLY CURRENT AS A FUNCTION OF
DIFFERENTIAL INPUT VOLTAGE
FIGURE 9. POWER SUPPLY CURRENT AS A FUNCTION OF
TEMPERATURE
3
HS-2700RH
o
Typical Performance Curves T = 25 C, VSUPPLY = ±15V, Unless Otherwise Specified (Continued)
A
130
120
110
100
VS = ±20.0V
VS = ±15.0V
90
VS = ±10.0V
VS = ±5.5V
80
-55
-25
0
25
50
75
100
125
o
TEMPERATURE ( C)
FIGURE 10. VOLTAGE GAIN AS A FUNCTION OF TEMPERATURE
NOTE: Open loop (comparator) applications are not recommended, because of the above characteristic.
Burn-In Circuits
HS1-2700RH CERDIP
HS2-2700RH METAL CAN
V+
C2
D1
NC
NC
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
NC
NC
NC
V+
C2
2
3
7
-
+
6
D2
4
8
NC
R1
NC
NC
C1
8
V-
C1
R1
D2
D1
C3
V-
NOTES:
1. R1 = 1MΩ, ±5%, 1/4W (Min)
NOTES:
5. R1 = 1MΩ, ±5%, 1/4W (Min)
6. C1 = 0.01µF/Socket (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
3. D1 = D2 = 1N4002 or equivalent (per board)
4. |(V+) - (V-)| = 31V ±1V
7. C2 = C3 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
8. D1 = D2 = 1N4002 or equivalent (per board)
9. |(V+) - (V-)| = 31V ±1V
10. Insulated scope probe must be used during board check-out.
4
HS-2700RH
NOTES:
Irradiation Circuit
11. R = 1MΩ, ±5%, 1/4W
12. V1 = +15V + 1.0V
13. V2 = -15V + 1.0V
NC
NC
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
NC
NC
NC
V1
NC
R1
NC
NC
8
V2
GND
Schematic Diagram
OS-
OS+
V-
1
15Ω
430K
Ω
V+
IN+
IN-
OUT
2
3
6
15Ω
V+
4
NOTE: Nominal currents shown in microamperes.
5
HS-2700RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
70 mils x 60 mils x 20 mils
(1780µm x 1530µm x 1530µm)
Substrate Potential (Powered Up):
Unbiased
INTERFACE MATERIALS:
Glassivation:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Type: Nitride
Thickness: 7kÅ ±0.7kÅ
5
2
< 2 x 10 A/cm
Top Metallization:
Type: Aluminum
Thickness: 16kÅ ±2kÅ
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
Metallization Mask Layout
HS-2700RH
+IN
-IN
V-
BAL
BAL
V+
OUTPUT
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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