HS9-139RH-T [INTERSIL]
Radiation Hardened Quad Voltage Comparator; 抗辐射四路电压比较器
| 型号： | HS9-139RH-T |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened Quad Voltage Comparator |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-139RH-T
Data Sheet
July 1999
File Number 4646.1
Radiation Hardened Quad Voltage
Comparator
Features
• QML Qualified Per MIL-PRF-38535 Requirements
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
• Radiation Environment
- Latch-up Free Under Any Conditions
5
- Total Dose. . . . . . . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)
2
- SEU LET . . . . . . . . . . . . . . . . . . . . . . . 20MEV/cm /mg
• 100V Output Voltage Withstand Capability
The Radiation Hardened HS-139RH-T consists of four
independent single or dual supply voltage comparators on a
single monolithic substrate. The common mode input voltage
range includes ground, even when operated from a single
supply, and the low supply current make these comparators
suitable for low power applications. These types were
designed to directly interface with TTL and CMOS.
• Differential Input Voltage Range Equal to the Supply
Voltage
• Input Offset Voltage (V ). . . . . . . . . . . . . . . . . 2mV(max)
IO
• Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA(max)
Applications
• Pulse Generators
The HS-139RH-T is fabricated on our dielectrically isolated
Rad Hard Silicon Gate (RSG) process, which provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
• Timing Circuitry
• Level Shifting
• Analog to Digital Conversion
Specifications
Pinouts
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
HS-139RH-T (SBDIP), CDIP2-T14
TOP VIEW
Detailed Electrical Specifications for the HS-139RH-T
are contained in SMD 5962-98613. A “hot-link” is
provided on our homepage with instructions for
downloading.
OUT 2
OUT 1
V+
1
2
3
4
5
6
7
14 OUT 3
13 OUT 4
12 GND
www.intersil.com/spacedefense/newsafclasst.asp
- IN 1
+ IN 1
- IN 2
+ IN 2
11 + IN 4
10 - IN 4
Intersil’ Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
9
8
+ IN 3
- IN 3
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP. RANGE
o
HS-139RH-T (FLATPACK), CDFP3-F14
ORDERING NUMBER
5962R9861301TCC
5962R9861301TXC
PART NUMBER
HS1-139RH-T
HS9-139RH-T
( C)
TOP VIEW
-55 to 125
-55 to 125
OUT 2
OUT 1
V+
1
2
3
4
5
6
7
14
13
12
11
10
9
OUT 3
OUT 4
GND
NOTE: Minimum order quantity for -T is 150 units
through distribution, or 450 units direct.
- IN 1
+ IN 1
- IN 2
- IN 2
+ IN 4
- IN 4
+ IN 3
- IN 3
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS-139RH-T
Die Characteristics
DIE DIMENSIONS:
Backside Finish:
3750µm x 2820µm (148 mils x 111 mils)
483µm ± 25.4µm (19 mils ± 1 mil)
Silicon
ASSEMBLY RELATED INFORMATION
INTERFACE MATERIALS
Glassivation
Substrate Potential:
Unbiased (DI)
Type: Nitride (Si3N4) over Silox (SiO2
Nitride Thickness: 4.0kA +/- 0.5kA
Silox Thickness: 12.0kA +/- 1.3kA
ADDITIONAL INFORMATION
Worst Case Current Density:
5
2
Top Metallization
<2.0 x 10 A/cm
Type: AL Si Cu
Thickness: 16.0kA +/- 2kA
Transistor Count:
49
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
HS-139RH-T
GND
(12)
+IN4
(11)
-IN4
(10)
OUT4
(13)
+IN3
(9)
OUT3
(14)
-IN3
(8)
+IN2
(7)
OUT2
(1)
-IN2
(6)
OUT1
(2)
V+
(3)
-IN1
(4)
+IN1
(5)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
2
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