HS9-2100RH-8 [INTERSIL]
Radiation Hardened High Frequency Half Bridge Driver; 抗辐射高频半桥驱动器
| 型号： | HS9-2100RH-8 |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened High Frequency Half Bridge Driver |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-2100RH
Data Sheet
June 1999
File Number 4562.3
Radiation Hardened High Frequency
Half Bridge Driver
Features
• Electrically Screened to DESC SMD # 5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
The Radiation Hardened HS-2100RH is a high frequency,
100V Half Bridge N-Channel MOSFET Driver IC, which is a
functional, pin-to-pin replacement for the Intersil HIP2500
and the industry standard 2110 types. The low-side and
high-side gate drivers are independently controlled. This
gives the user maximum flexibility in dead-time selection and
driver protocol.
5
- Maximum Total Dose . . . . . . . . . . . . . .3 x 10 RAD(SI)
- DI RSG Process Provides Latch-up Immunity
- Vertical Architecture Provides Low Dose Rate Immunity
• Bootstrap Supply Max Voltage to 120V
In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from SEUs.
• Drives 1000pF Load at 1MHz with Rise and Fall Times of
45ns (Typ)
• 1A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)
Undervoltage on the high-side supply forces HO low. When
that supply returns to a valid voltage, HO will go to the state
of HIN. Undervoltage on the low-side supply forces both LO
and HO low. When that supply becomes valid, LO returns to
the LIN state and HO returns to the HIN state.
• Operates with V
DD
= V Over 12V to 20V Range
CC
• Supply Undervoltage Protection
Applications
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
• DC Motor Drivers
Detailed Electrical Specifications for the HS-2100RH are
contained in SMD 5962-99536. A “hot-link” is provided
on our homepage for downloading.
Pinout
www.intersil.com/spacedefense/space.asp
HS-2100RH
FLATPACK (CDFP4-F16)
TOP VIEW
This link will not be available until the SMD is finalized.
Ordering Information
LO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
INTERSIL MKT.
NUMBER
TEMP.
COM
V
SS
o
ORDERING NUMBER
5962F9953601VXC
5962F9953601QXC
HS9-2100RH/Proto
RANGE ( C)
-55 to 125
-55 to 125
-55 to 125
V
LIN
SD
CC
HS9-2100RH-Q
HS9-2100RH-8
HS9-2100RH/Proto
NC
NC
VS
VB
HO
HIN
V
DD
NC
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HS-2100RH
Die Characteristics
DIE DIMENSIONS:
Backside Finish:
4710µm x 3570µm (186 mils x 141 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
Silicon
ASSEMBLY RELATED INFORMATION:
INTERFACE MATERIALS:
Glassivation:
Substrate Potential:
Unbiased (DI)
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
ADDITIONAL INFORMATION:
Worst Case Current Density:
Top Metallization:
5
2
<2.0 x 10 A/cm
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Transistor Count:
Substrate:
125
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
HS-2100RH
SD (13)
LIN (14)
HIN (12)
V
(11)
DD
V
(15)
SS
HO (8)
LO (1)
COM (2)
VB (7)
VS (6)
V
(3)
CC
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
2
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