HS9-6254RH-Q
更新时间：2024-09-18 01:57:29
品牌：INTERSIL
描述：Radiation Hardened Ultra High Frequency NPN Transistor Array
概述
数据手册HS9-6254RH-Q 概述
Radiation Hardened Ultra High Frequency NPN Transistor Array 抗辐射超高频NPN晶体管阵列
HS9-6254RH-Q 数据手册
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PDF下载HS-6254RH
Data Sheet
August 1999
File Number 4425.2
Radiation Hardened Ultra High Frequency
NPN Transistor Array
Features
• Electrically Screened to SMD # 5962-97641
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
The HS-6254RH is a Radiation Hardened array of five NPN
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes provides
an immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
5
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10 RAD(Si)
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
• Gain Bandwidth Product (F ). . . . . . . . . . . . . .8GHz (Typ)
T
The high F (8GHz) and low noise figure (3.5dB) of these
T
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the five transistors provides the closest electrical and
thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
• Current Gain (h ) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
FE
• Early Voltage (V ). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
A
• Noise Figure (50Ω) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Applications
• High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
Detailed Electrical Specifications for these devices are
contained in SMD 5962-97641. A “hot-link” is provided
on our homepage for downloading.
• High Frequency Converters
• Synchronous Detectors
www.intersil.com/spacedefense/space.asp
Pinouts
Ordering Information
HS1-6254RH (CERDIP) GDIP1-T16 OR
HS1-6254RH (SBDIP) CDIP2-T16
TOP VIEW
INTERNAL
MKT. NUMBER
TEMP.RANGE
o
ORDERING NUMBER
HS0-6254RH-Q
( C)
HS0-6254RH-Q
HS1-6254RH-Q
HS1B-6254RH-Q
HS9-6254RH-Q
25
Q1C
Q2C
Q2E
Q2B
NC
1
2
3
4
5
6
7
8
16 Q1E
15 Q1B
14 Q5B
13 Q5E
12 Q5C
11 Q4C
10 Q4E
5962F9764101VEA
5962F9764101VEC
5962F9764101VXC
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Q1
Q2
Q3
Q5
HS1-6254RH/SAMPLE HS1-6254RH/SAMPLE
Q3C
Q3E
Q3B
Q4
9
Q4B
HS9-6254RH (FLATPACK) CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Q1C
Q2C
Q2E
Q2B
NC
Q1E
Q1B
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
Q1
Q2
Q3
Q5
Q3C
Q3E
Q3B
Q4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
HS-6254RH
Burn-In Circuit
100 ±5%
10.5V ±0.5V
5.5V ±0.5V
0.01µF
0.01µF
1
16
15
14
13
12
11
10
9
Q1
1K ±5%
2
3
4
5
6
7
8
Q2
Q3
1K ±5%
NC
Q5
1K ±5%
1K ±5%
Q4
1K ±5%
Irradiation Circuit
100Ω ±5%
10.5V ±0.5V
0.01µF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Q1
1K ±5%
Q2
Q3
1K ±5%
NC
Q5
1K ±5%
1K ±5%
Q4
1K ±5%
5V ±0.5V
0.01µF
2
HS-6254RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
52 mils x 52.8 mils x 15 mils ±1 mil
1320µm x 1340µm x 381µm ±25.4µm
Substrate Potential:
Floating
INTERFACE MATERIALS:
Glassivation:
ADDITIONAL INFORMATION:
Worst Case Current Density:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
5
2
3.04 x 10 A/cm
Transistor Count:
Top Metallization:
5
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
Metallization Mask Layout
HS-6254RH
2
1
16
15
14
3
4
13
12
11
5
6
7
8
9
10
NOTE: Pad numbers correspond to the 16 lead pinout.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
3
HS9-6254RH-Q 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| HS9-6254RH/PROTO | RENESAS | 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 | 获取价格 |
|
| HS9-6254RH/SAMPLE | RENESAS | 5 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR, CERAMIC, DFP-16 | 获取价格 |
|
| HS9-6504RH | RENESAS | 4KX1 STANDARD SRAM, 210ns, CDFP18 | 获取价格 |
|
| HS9-6504RH-8 | ETC | x1 SRAM | 获取价格 |
|
| HS9-6504RH-Q | RENESAS | HS9-6504RH-Q | 获取价格 |
|
| HS9-6504RRH | RENESAS | 4KX1 STANDARD SRAM, 210ns, CDFP18 | 获取价格 |
|
| HS9-6508RH | RENESAS | Standard SRAM, 1KX1, 310ns, CMOS, CDFP16 | 获取价格 |
|
| HS9-6514RH-Q | RENESAS | HS9-6514RH-Q | 获取价格 |
|
| HS9-6514RRH-Q | RENESAS | HS9-6514RRH-Q | 获取价格 |
|
| HS9-65643RH | RENESAS | 64KX1 STANDARD SRAM, 50ns, CDFP24 | 获取价格 |
|
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