HUF75329D3S [INTERSIL]
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs; 20A , 55V , 0.026 Ohm的N通道UltraFET功率MOSFET![HUF75329D3S](http://pdffile.icpdf.com/pdf1/p00054/img/icpdf/HUF75329_280874_icpdf.jpg)
型号: | HUF75329D3S |
厂家: | ![]() |
描述: | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
文件: | 总9页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HUF75329D3, HUF75329D3S
Data Sheet
June 1999
File Number 4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
Features
• 20A, 55V
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
• Simulation Models
®
©
- Temperature Compensated PSPICE and SABER
Models
This advanced process technology
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Formerly developmental type TA75329.
D
Ordering Information
PART NUMBER
PACKAGE
TO-251AA
TO-252AA
BRAND
75329D
75329D
HUF75329D3
G
HUF75329D3S
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
(FLANGE)
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
76
HUF75329D3, HUF75329D3S
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
55
55
V
V
V
DSS
DGR
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
20
Figure 4
Figures 6, 14, 15
128
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W
D
o
o
0.86
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 175
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
= 250µA, V
= 0V (Figure 11)
55
-
-
-
-
-
-
V
DSS
D
GS
GS
GS
I
V
V
V
= 50V, V
= 45V, V
= ±20V
= 0V
1
µA
µA
nA
DSS
DS
DS
GS
o
= 0V, T = 150 C
-
250
±100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
I
-
GSS
V
V
= V , I = 250µA (Figure 10)
2
-
-
4
V
GS(TH)
GS
DS
D
r
I
= 20A, V
= 10V (Figure 9)
0.022
0.026
Ω
DS(ON)
D
GS
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
(Figure 3)
TO-251, TO-252
-
-
-
-
1.17
100
C/W
θJC
o
C/W
θJA
SWITCHING SPECIFICATIONS (V
= 10V)
GS
Turn-On Time
t
V
R
R
= 30V, I
= 1.5Ω, V
= 9.1Ω
20A,
= 10V,
-
-
-
-
-
-
-
60
-
ns
ns
ns
ns
ns
ns
ON
DD
D
L
GS
Turn-On Delay Time
Rise Time
t
7
d(ON)
GS
t
30
10
33
-
-
r
Turn-Off Delay Time
Fall Time
t
-
d(OFF)
t
-
f
Turn-Off Time
t
65
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V
DD
= 30V,
20A,
-
-
-
-
-
50
32
2.0
5
65
40
2.5
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
I
D
Gate Charge at 10V
Q
g(10)
g(TH)
R
= 1.5Ω
L
I
= 1.0mA
g(REF)
(Figure 13)
Threshold Gate Charge
Q
Gate to Source Gate Charge
Reverse Transfer Capacitance
Q
gs
gd
Q
13
-
77
HUF75329D3, HUF75329D3S
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
V
= 25V, V
DS GS
= 0V,
-
-
-
1060
405
95
-
-
-
pF
pF
pF
ISS
f = 1MHz
(Figure 12)
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
68
UNITS
V
V
I
I
I
= 20A
-
-
-
-
-
-
SD
SD
SD
SD
t
= 20A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 20A, dI /dt = 100A/µs
120
nC
RR
SD
Typical Performance Curves
1.2
1.0
0.8
25
20
15
10
5
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
o
150
175
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R + T
J
DM
θJC
θJC C
SINGLE PULSE
0.01
-5
10
-4
-3
10
-2
-1
10
0
1
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
78
HUF75329D3, HUF75329D3S
Typical Performance Curves (Continued)
1000
o
T
= 25 C
FOR TEMPERATURES
C
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10
-5
-4
10
-3
10
-2
-1
0
1
10
t, PULSE WIDTH (s)
10
10
10
FIGURE 4. PEAK CURRENT CAPABILITY
200
If R = 0
500
100
T
T
= MAX RATED
t
= (L)(I )/(1.3*RATED BV
- V
)
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV
J
AS
DSS
DD
100
10
1
o
= 25 C
C
t
AV
- V ) +1]
DD
AS
DSS
o
100µs
STARTING T = 25 C
J
o
STARTING T = 150 C
J
10
1
1ms
OPERATION IN THIS
AREA MAY BE
10ms
LIMITED BY r
DS(ON)
= 55V
V
DSS(MAX)
0.01
0.1
1
10
100
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
t
, TIME IN AVALANCHE (ms)
AV
V
DS
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
80
60
40
20
0
100
V
= 20V
= 10V
= 8V
GS
V
o
-55 C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
GS
V
GS
V
= 7V
80
60
40
20
0
GS
V
= 6V
GS
o
175 C
V
= 5V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
o
V
DD
= 15V
C
25 C
0
1
2
3
4
5
0
1.5
3.0
4.5
6.0
7.5
V
, DRAIN TO SOURCE VOLTAGE (V)
V , GATE TO SOURCE VOLTAGE (V)
GS
DS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
79
HUF75329D3, HUF75329D3S
Typical Performance Curves (Continued)
2.5
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 250µA
DS D
GS
V
= 10V, I = 20A
D
GS
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
RESISTANCE vs JUNCTION TEMPERATURE
1.2
1.1
1.0
0.9
0.8
1500
I
= 250µA
V
= 0V, f = 1MHz
D
GS
C
C
C
= C
+ C
ISS
GS
GD
= C
GD
RSS
OSS
1200
900
600
300
0
≈ C + C
C
DS
GD
ISS
C
C
OSS
RSS
-80
-40
0
40
80
120
160
200
0
10
20
30
40
50
60
o
T , JUNCTION TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
J
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
I
I
I
= 20A
= 12.5A
= 5A
D
D
D
V
= 30V
15
DD
0
0
5
10
20
25
30
35
Q , GATE CHARGE (nC)
g
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
80
HUF75329D3, HUF75329D3S
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DS
V
Q
DD
R
g(TOT)
L
V
DS
V
= 20V
GS
V
Q
GS
g(10)
+
-
V
DD
V
= 10V
V
GS
GS
DUT
V
= 2V
GS
I
0
G(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
V
GS
V
DD
10%
10%
0
-
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
81
HUF75329D3, HUF75329D3S
PSPICE Electrical Model
.SUBCKT HUF75329D 2 1 3 ;
rev 6/19/97
CA 12 8 1.72e-9
CB 15 14 1.52e-9
CIN 6 8 9.61e-10
LDRAIN
DPLCAP
DRAIN
2
5
10
RLDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
RSLC1
51
DBREAK
+
RSLC2
5
ESLC
11
51
-
50
EBREAK 11 7 17 18 58.13
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
+
-
17
18
-
DBODY
RDRAIN
6
8
EBREAK
ESG
EVTHRES
+
16
21
+
-
EVTEMP 20 6 18 22 1
19
MWEAK
LGATE
EVTEMP
+
8
RGATE
GATE
6
-
18
22
MMED
1
IT 8 17 1
9
20
MSTRO
8
RLGATE
LDRAIN 2 5 1e-9
LGATE 1 9 2.86e-9
LSOURCE 3 7 2.69e-9
LSOURCE
CIN
SOURCE
3
7
RSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RLSOURCE
S1A
S2A
RBREAK
12
15
13
14
13
17
18
8
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1e-3
RGATE 9 20 1.52
RLDRAIN 2 5 10
RLGATE 1 9 26.9
RLSOURCE 3 7 28.6
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 13.85e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*135),3.5))}
.MODEL DBODYMOD D (IS = 7.50e-13 RS = 5.05e-3 TRS1 = 2.21e-3 TRS2 = 1.02e-6 CJO = 1.51e-9 TT = 4.05e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 2.14e-1 TRS1 = 9.62e-4 TRS2 = 1.23e-6)
.MODEL DPLCAPMOD D (CJO = 13.5e-10 IS = 1e-30 N = 10 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 3.25 KP = 2.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.52)
.MODEL MSTROMOD NMOS (VTO = 3.80 KP = 70.0 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.91 KP = 0.06 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 15.2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.05e-3 TC2 = 1.94e-7)
.MODEL RDRAINMOD RES (TC1 = 8.04e-2 TC2 = 1.37e-4)
.MODEL RSLCMOD RES (TC1 = 4.83e-3 TC2 = 1.16e-6)
.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RVTHRESMOD RES (TC = -3.43e-3 TC2 = -1.63e-5)
.MODEL RVTEMPMOD RES (TC1 = -1.35e-3 TC2 = 1.16e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.90 VOFF= -4.90)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.90 VOFF= -7.90)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.50 VOFF= 2.50)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.50 VOFF= -0.50)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
82
HUF75329D3, HUF75329D3S
SABER Electrical Model
REV June 1997
template huf75329d n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 7.50e-13, cjo = 1.51e-9, tt = 4.05e-8, m = 0.5)
d..model dbreakmod = ()
LDRAIN
RLDRAIN
RDBODY
DPLCAP
DRAIN
2
5
d..model dplcapmod = (cjo = 13.5e-10, is = 1e-30, n = 10, m = 0.85)
m..model mmedmod = (type=_n, vto = 3.25, kp = 2.50, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.80, kp = 70, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.91, kp = 0.06, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -7.90, voff = -4.90)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -4.90, voff = -7.90)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.50, voff = 2.50)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 2.50, voff = -0.50)
10
RSLC1
51
RDBREAK
72
DBREAK
11
RSLC2
ISCL
50
-
c.ca n12 n8 = 1.72e-9
c.cb n15 n14 = 1.52e-9
c.cin n6 n8 = 9.61e-10
71
RDRAIN
6
8
ESG
EVTHRES
+
+
16
21
-
19
8
MWEAK
LGATE
EVTEMP
+
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
DBODY
RGATE
GATE
1
6
-
18
22
EBREAK
+
MMED
9
20
MSTRO
8
17
18
-
RLGATE
i.it n8 n17 = 1
LSOURCE
CIN
SOURCE
3
7
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 2.86e-9
l.lsource n3 n7 = 2.69e-9
RSOURCE
RLSOURCE
k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085
S1A
S2A
14
13
RBREAK
12
15
13
17
18
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
8
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
RVTEMP
19
S1B
S2B
13
CB
CA
IT
14
-
res.rbreak n17 n18 = 1, tc1 = 1.05e-3, tc2 = 1.94e-7
res.rdbody n71 n5 = 5.05e-3, tc1 = 2.21e-3, tc2 = 1.02e-6
res.rdbreak n72 n5 = 2.14e-1, tc1 = 9.62e-4, tc2 = 1.23e-6
res.rdrain n50 n16 = 1e-3, tc1 = 8.04e-2, tc2 = 1.37e-4
res.rgate n9 n20 = 1.52
+
+
VBAT
6
8
5
8
EGS
EDS
+
-
-
8
22
res.rldrain n2 n5 = 10
RVTHRES
res.rlgate n1 n9 = 26.9
res.rlsource n3 n7 = 28.6
res.rslc1 n5 n51 = 1e-6, tc1 = 4.83e-3, tc2 = 1.16e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 13.85e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.35e-3, tc2 = 1.16e-6
res.rvthres n22 n8 = 1, tc1 = -3.43e-3, tc2 = -1.63e-5
spe.ebreak n11 n7 n17 n18 = 58.13
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/135))** 3.5))
}
}
83
HUF75329D3, HUF75329D3S
SPICE Thermal Model
JUNCTION
th
REV 23 February 1999
HUF75329D
CTHERM1 th 6 2.80e-3
CTHERM2 6 5 1.00e-2
CTHERM3 5 4 6.80e-3
CTHERM4 4 3 7.00e-3
CTHERM5 3 2 1.60e-2
CTHERM6 2 tl 15.55
RTHERM1
CTHERM1
6
RTHERM1 th 6 7.94e-3
RTHERM2 6 5 1.98e-2
RTHERM3 5 4 5.57e-2
RTHERM4 4 3 3.13e-1
RTHERM5 3 2 4.71e-1
RTHERM6 2 tl 6.26e-2
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model HUF75329D
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.80e-3
ctherm.ctherm2 6 5 = 1.00e-2
ctherm.ctherm3 5 4 = 6.80e-3
ctherm.ctherm4 4 3 = 7.00e-3
ctherm.ctherm5 3 2 = 1.60e-2
ctherm.ctherm6 2 tl = 15.55
4
3
2
rtherm.rtherm1 th 6 = 7.94e-3
rtherm.rtherm2 6 5 = 1.98e-2
rtherm.rtherm3 5 4 = 5.57e-2
rtherm.rtherm4 4 3 = 3.13e-1
rtherm.rtherm5 3 2 = 4.71e-1
rtherm.rtherm6 2 tl = 6.26e-2
}
tl
CASE
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84
相关型号:
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HUF75329D3S_NL
Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
FAIRCHILD
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