IRF223 [INTERSIL]
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs; 4.0A和5.0A ， 150V和200V ， 0.8和1.2 Ohm的N通道功率MOSFET
| 型号： | IRF223 |
| 厂家： | 
Intersil |
| 描述： | 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs |
| 文件： | 总7页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Semiconductor
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
October 1997
Features
Description
• 4.0A and 5.0A, 150V and 200V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• r
DS(ON)
= 0.8Ω and 1.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Formerly developmental type TA09600.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Ordering Information
D
S
PART NUMBER
IRF220
PACKAGE
TO-204AA
BRAND
IRF220
G
IRF221
TO-204AA
TO-204AA
TO-204AA
IRF221
IRF222
IRF223
IRF222
IRF223
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 1567.2
Copyright © Harris Corporation 199&
1
IRF220, IRF221, IRF222, IRF223
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
IRF220
200
IRF221
150
IRF222
200
IRF223
150
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .V
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . V
200
150
200
150
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
5.0
3.0
5.0
3.0
4.0
2.5
4.0
2.5
A
A
D
D
o
T
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
20
±20
20
±20
16
±20
16
±20
A
V
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P
40
40
40
40
W
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . .E
0.32
0.32
0.32
0.32
W/ C
85
85
85
85
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . T
Maximum Temperature for Soldering
T
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
J, STG
o
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
300
260
300
260
300
260
300
260
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . T
C
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF220, IRF222
BV
DSS
I
= 250µA, V = 0V, (Figure 10)
GS
D
200
150
2.0
-
-
-
-
-
-
-
V
V
IRF221, IRF223
-
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V
V
V
V
V
= V , I = 250µA
GS
4.0
25
250
V
GS(TH)
DS
DS
DS
DS
D
I
= Rated BV
, V
DSS GS
= 0V
µA
µA
DSS
o
= 0.8 x Rated BV
, V
DSS GS
= 0V, T = 125 C
-
J
On-State Drain Current (Note 2)
IRF220, IRF221
I
> I
D(ON)
x r = 10V
, V
D(ON)
DS(ON)MAX GS
5.0
4.0
-
-
-
-
-
-
A
A
IRF222, IRF223
Gate to Source Leakage Current
I
V
= ±20V
±100
nA
GSS
GS
Drain to Source On Resistance (Note 2)
IRF220, IRF221
r
I
= 2.5A, V = 10V, (Figure 8)
GS
DS(ON)
D
-
0.5
0.8
2.5
20
30
50
30
11
0.8
1.2
-
Ω
Ω
IRF222, IRF223
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
-
g
V
V
> I
D(ON)
x r
, I = 2.5A
1.3
S
fs
DS
DD
DS(ON)MAX D
t
= 0.5 x Rated BV
DSS
, I ≈ 2.5A, R = 50Ω
-
-
-
-
-
40
60
100
60
15
ns
ns
ns
ns
nC
d(ON)
D
G
For IRF220, 222 R = 80Ω
For IRF221, 223 R = 60Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
L
t
r
L
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Total Gate Charge
Q
V
= 10V, I = 6.0A, V = 0.8 x Rated BV
DS DSS
g(TOT)
GS
D
(Gate to Source + Gate to Drain)
I
= 1.5mA, (Figures 14, 19, 20) Gate
g(REF)
Charge is Essentially Independent of Operating
Temperature
Gate to Source Charge
Q
Q
-
-
5.0
6.0
-
-
nC
nC
gs
Gate to Drain “Miller” Charge
gd
2
IRF220, IRF221, IRF222, IRF223
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
= 25V, V = 0V, f = 1MHz
GS
MIN TYP MAX UNITS
Input Capacitance
C
V
-
-
-
-
450
150
40
-
-
-
-
pF
pF
pF
nH
ISS
DS
(Figure 11)
Output Capacitance
C
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
L
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and Inductances
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
5.0
D
S
D
L
D
Internal Source Inductance
L
Measured From the
Source Lead, 6mm
-
12.5
-
nH
(0.25in) From the Flange
and the Source Bonding
Pad
G
L
S
S
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
3.12
30
C/W
θJC
Free Air Operation
C/W
θJA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
MIN TYP MAX UNITS
Continuous Source to Drain Current
IRF220, IRF221
I
SD
D
-
-
-
-
5.0
4.0
A
A
P-N Junction Rectifier
IRF222, IRF223
G
Pulse Source to Drain Current (Note 3)
IRF220, IRF221
I
SDM
-
-
-
-
20
16
A
A
S
IRF222, IRF223
Source to Drain Diode Voltage (Note 2)
IRF220, IRF221
V
SD
o
T
T
= 25 C, I
= 5.0A, V
= 4.0A, V
= 0V, (Figure 13)
= 0V, (Figure 13)
-
-
-
-
-
-
2.0
1.8
-
V
V
C
C
SD
SD
GS
o
IRF222, IRF223
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
= 25 C, I
GS
o
t
T = 150 C, I
J
= 5.0A, dI /dt = 100A/µs
SD
350
2.3
ns
µC
rr
SD
SD
o
Q
T = 150 C, I
= 5.0A, dI /dt = 100A/µs
SD
-
RR
J
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 10V, starting T = 25 C, L = 6.18mH, R = 50Ω, peak I = 5A. See Figures 15, 16.
J G AS
DD
3
IRF220, IRF221, IRF222, IRF223
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
5
4
3
IRF220, IRF221
IRF222, IRF223
2
1
0
25
50
75
100
o
150
125
0
50
100
o
150
T , CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
t
1
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
PEAK T = P
x Z
x R + T
J
DM
θJC
θJC C
0.01
10
-5
-4
-3
-2
-1
10
10
10
10
1
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
10
10
OPERATION IN THIS AREA
IS LIMITED BY r
10V
V
= 7V
= 6V
DS(ON)
GS
IRF220, IRF221
8
6
4
2
0
80µs PULSE TEST
IRF222, IRF223
IRF220, IRF221
V
GS
100µs
10µs
IRF222, IRF223
DC
V
= 5V
= 4V
1ms
GS
1.0
0.1
10ms
100ms
IRF220
IRF222
o
T
T
= 25 C
C
J
V
= MAX RATED
GS
IRF221
IRF223
SINGLE PULSE
1.0
10
100
1000
0
20
40
60
80
100
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
4
IRF220, IRF221, IRF222, IRF223
Typical Performance Curves Unless Otherwise Specified (Continued)
5
4
3
2
1
0
10
8
10V
80µs PULSE TEST
80µs PULSE TEST
V
>I
x r
MAX
DS D(ON)
DS(ON)
8V
6V
V
= 5V
GS
6
4
o
T
T
T
= 125 C
J
J
J
2
o
4V
= 25 C
o
= -55 C
0
0
2
4
6
8
10
0
2
4
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
DS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
2.2
1.8
V
= 10V
GS
= 2A
I
D
1.0
0.5
0
1.4
1.0
V
= 10V
GS
V
= 20V
GS
0.6
0.2
-40
0
40
80
120
0
5
10
I , DRAIN CURRENT (A)
15
20
o
T , JUNCTION TEMPERATURE ( C)
D
J
NOTE: Heating effect of 2µs is minimal.
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
1000
800
600
400
200
0
I
= 250µA
D
V
= 0V, f = 1MHz
GS
C
C
C
= C
+ C
ISS
GS
GD
= C
GD
1.15
1.05
0.95
0.85
0.75
RSS
OSS
≈ C
+ C
GD
DS
C
ISS
C
OSS
RSS
C
-40
0
40
80
120
160
0
10
V
20
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
40
50
o
T , JUNCTION TEMPERATURE ( C)
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
IRF220, IRF221, IRF222, IRF223
Typical Performance Curves Unless Otherwise Specified (Continued)
5
4
3
2
1
0
2
V
> I
x r
D(ON) DS(ON)MAX
DS
o
100
T
= -55 C
80µs PULSE TEST
J
o
T
= 25 C
J
o
o
T
= 150 C
T
J
= 25 C
J
J
o
T
= 125 C
10
o
T
= 150 C
J
o
T
= 25 C
J
1.0
0
1
2
3
4
0
2
4
6
8
10
I , DRAIN CURRENT (A)
V
, SOURCE TO DRAIN VOLTAGE (V)
SD
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 6.0A
D
V
= 40V
15
10
5
DS
= 100V
V
DS
V
= 160V
DS
IRF220, IRF222
0
0
4
8
12
16
20
Q
TOTAL GATE CHARGE (nC)
g(TOT),
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
6
IRF220, IRF221, IRF222, IRF223
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
g(TOT)
SAME TYPE
AS DUT
V
GS
12V
BATTERY
Q
gd
0.2µF
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
I
G(REF)
V
DS
I CURRENT
D
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
FIGURE 20. GATE CHARGE WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
7
相关型号：
IRF230E
Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
INFINEON
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