IRF245 [INTERSIL]
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs; 14A和13A ， 275V和250V ， 0.28和0.34 Ohm的N通道功率MOSFET
| 型号： | IRF245 |
| 厂家： | 
Intersil |
| 描述： | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 文件： | 总7页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF244, IRF245,
IRF246, IRF247
Semiconductor
14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm,
N-Channel Power MOSFETs
January 1998
Features
Description
• 14A and 13A, 275V and 250V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
• r
DS(ON)
= 0.28Ω and 0.34Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Formerly developmental type TA17423.
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
D
S
Ordering Information
G
PART NUMBER
IRF244
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
IRF244
IRF245
IRF246
IRF247
IRF245
IRF246
IRF247
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
File Number 2209.2
Copyright © Harris Corporation 1997
5-1
IRF244, IRF245, IRF246, IRF247
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
IRF244
250
IRF245
250
IRF246
275
IRF247
275
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . V
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . V
250
250
275
275
GS
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
o
14
13
14
13
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
8.8
8.0
8.8
8.0
C
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
56
52
56
52
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±20
±20
±20
±20
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P
125
125
125
125
D
o
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
1.0
1.0
1.0
W/ C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
550
550
550
550
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . T , T
J
-55 to 150
-55 to 150
-55 to 150
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T
o
300
260
300
260
300
260
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF244, IRF245
BV
DSS
V
= 0V, I = 250µA
D
GS
(Figure 10)
250
275
2.0
-
-
-
-
-
-
-
V
V
IRF246, IRF247
-
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
V
GS(TH)
V
V
V
= V , I = 250µA
DS
4.0
25
250
V
GS
DS
DS
D
I
= Rated BV
, V
DSS GS
= 0V
µA
µA
DSS
= 0.8 x Rated BV
, V
DSS GS
= 0V,
-
o
T = 125 C
J
On-State Drain Current (Note 2)
IRF244, IRF246
I
D(ON)
V
> I
r
, V = 10V
DS
D(ON) x DS(ON)MAX GS
14
13
-
-
-
-
-
-
A
A
IRF245, IRF247
Gate to Source Leakage Current
I
V
V
= ±20V
±100
nA
GSS
GS
GS
Drain to Source On-State Resistance (Note 2)
IRF244, IRF246
r
= 10V, I = 8A, (Figures 8, 9)
D
DS(ON)
-
0.20 0.28
0.24 0.34
Ω
Ω
IRF245, IRF247
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
-
g
V
V
≥ 50V, I = 8A, (Figure 12)
6.7
10
16
67
53
49
39
-
S
fs
DS
DD
D
t
= 125V, I ≈ 14A, R = 9.1Ω, R = 8.9Ω
-
-
-
-
-
24
100
80
74
59
ns
ns
ns
ns
nC
d(ON)
D
G
L
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
t
r
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
V
= 10V, I = 14A, V
= 0.8 x Rated
g(TOT)
GS
BV
D
DS
= 1.5mA,
, I
DSS g(REF)
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
Gate to Source Charge
Q
Q
-
-
6.6
20
-
-
nC
nC
gs
Gate to Drain “Miller” Charge
gd
5-2
IRF244, IRF245, IRF246, IRF247
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
= 25V, f = 1.0MHz
MIN
TYP MAX UNITS
Input Capacitance
C
V
= 0V, V
DS
-
-
-
-
1300
320
69
-
-
-
-
pF
pF
pF
nH
ISS
GS
(Figure 11)
Output Capacitance
C
C
OSS
RSS
Reverse-Transfer Capacitance
Internal Drain Inductance
L
Measured Between
the Contact Screw on Symbol Showing the
the Flange that is Internal Devices
Modified MOSFET
5.0
D
Closer to Source and Inductances
Gate Pins and the
D
Center of Die
L
D
Internal Source Inductance
L
Measured From The
-
12.5
-
nH
S
Source Lead, 6mm
(0.25in) From the
Flange and the
G
L
S
S
Source Bonding Pad
o
o
Junction to Case
R
R
-
-
-
-
1.0
30
C/W
C/W
θJC
Junction to Ambient
Free Air Operation
θJA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
MIN
TYP MAX UNITS
Continuous Source to Drain Current
I
-
-
-
-
14
56
A
A
SD
D
Pulse Source to Drain Current
(Note 3)
I
SM
P-N Junction Diode
G
S
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
V
T = 25 C, I
J
= 14A, V
= 0V (Figure 13)
-
150
1.6
-
-
300
3.4
-
1.8
640
7.2
-
V
ns
µC
-
SD
SD
SD
SD
GS
o
t
T = 25 C, I
J
= 14A, dI /dt = 100A/µs
SD
rr
o
Reverse Recovered Charge
Forward Turn-On Time
Q
T = 25 C, I
= 14A, dI /dt = 100A/µs
SD
RR
J
t
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by L + L
ON
S
D
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 50V, starting T = 25 C, L = 4.5mH, R = 25Ω, peak I = 14A. See Figures 15, 16.
J G AS
DD
5-3
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
15
12
9
IRF244, IRF246
IRF245, IRF247
6
3
0
25
50
75
100
o
125
150
0
50
100
150
o
T , CASE TEMPERATURE ( C)
T
CASE TEMPERATURE ( C)
C,
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
1
0.5
0.2
P
0.1
DM
0.1
0.05
0.02
0.01
t
1
t
0.01
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
+ T
θJC C
J
DM
0.001
-5
-4
-3
10
-2
0.1
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
1000
100
10
25
OPERATION IN THIS
REGION IS LIMITED
V
=10V
80µs PULSE TEST
=6.0V
GS
BY r
DS(ON)
20
15
10
5
V
GS
IRF244, 246
IRF245, 247
10µs
IRF244, 246
IRF245, 247
100µs
V
=5.5V
GS
1ms
V
= 5.0V
GS
10ms
DC
1
o
T
T
= 25 C
V
=4.5V
=4.0V
C
J
GS
= MAX RATED
SINGLE PULSE
IRF244,
IRF245
IRF246,
IRF247
V
GS
0.1
0
100
1000
0
25
50
75
100
125
1
10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5-4
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specified (Continued)
25
100
80µs PULSE TEST
10V
V
≥ 50V
DS
80µs PULSE TEST
20
15
10
5
6.0V
10
1
5.5V
o
o
T
= 25 C
T
= 150 C
J
J
V
= 5.0V
GS
4.5V
4.0V
0.1
0
0
2
4
6
8
10
0
2
4
6
8
10
V
DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS,
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0
3.0
2.4
1.8
1.2
0.6
0
80µs PULSE TEST
I
= 14A
D
V
= 10V
GS
V
= 10V
GS
V
= 20V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
0
15
30
60
75
45
I
DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE ( C)
J
D,
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
3000
I
= 250µA
V
C
= 0V, f = 1MHz
D
GS
ISS
= C + C
GS GD
C
C
= C
RSS
OSS
GD
≈ C
1.15
1.05
0.95
0.85
0.75
2400
1800
1200
600
0
+ C
GD
DS
C
ISS
C
OSS
C
RSS
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
0
10
DRAIN TO SOURCE VOLTAGE (V)
100
T , JUNCTION TEMPERATURE ( C)
V
DS,
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specified (Continued)
2
15
12
9
10
V
≥ 50V
DS
80µs PULSE TEST
o
T
= 25 C
J
10
1
o
T
= 150 C
J
o
o
T
= 25 C
T
= 150 C
J
J
6
3
0.1
0
0
5
10
15
20
25
0
0.4
0.8
1.2
1.6
2.0
I
DRAIN CURRENT (A)
V , SOURCE TO DRAIN VOLTAGE (V)
SD
D,
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
I
= 14A
C
16
V
= 50V
DS
12
8
V
= 125V
DS
V
= 200V
DS
4
0
0
12
Q
24
36
48
60
TOTAL GATE CHARGE (nC)
g(TOT),
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-6
IRF244, IRF245, IRF246, IRF247
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
g(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
5-7
相关型号：
IRF24ER101K
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT
VISHAY
IRF24ER102J
General Fixed Inductor, 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT
VISHAY
IRF24ER102K
General Fixed Inductor, 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT
VISHAY
IRF24ER10IJ
General Fixed Inductor, 1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT
VISHAY
IRF24ER120K
General Fixed Inductor, 1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT
VISHAY
IRF24ER121J
General Fixed Inductor, 1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, HALOGEN FREE AND ROHS COMPLIANT
VISHAY
©2020 ICPDF网 联系我们和版权申明