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元器件品牌
IRF250
[INTERSIL]
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET; 30A ， 200V ， 0.085 Ohm的N通道功率MOSFET
元器件型号：
IRF250
生产厂家：
INTERSIL CORPORATION
描述和应用：
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
30A ， 200V ， 0.085 Ohm的N通道功率MOSFET
PDF文件：
总7页 (文件大小：61K)
下载文档：
下载PDF数据表文档文件
型号参数：IRF250参数
查看货源
IRF250P224
Power Field-Effect Transistor, 96A I(D), 250V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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on line
156
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27
INFINEON
IRF250R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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478
ETC
IRF250SM
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 22A I(D) | LLCC
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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155
ETC
IRF250SMD
N.CHANNEL POWER MOSFET
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
112
SEME-LAB
IRF251
N-CHANNEL POWER MOSFETS
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156
-
114
SAMSUNG
IRF251
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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32
IXYS
IRF251
Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204,
Warning
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156
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0
VISHAY
IRF251R
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 30A I(D) | TO-204AE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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37
ETC
IRF252
N-CHANNEL POWER MOSFETS
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
103
SAMSUNG
IRF252
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
33
IXYS
IRF2525
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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56
ETC
IRF252R
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-204AE
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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20
ETC
IRF253
N-CHANNEL POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
104
SAMSUNG
IRF253
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
26
IXYS
IRF253
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
VISHAY
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