ISL6174 [INTERSIL]

Dual Low Voltage Circuit Breaker; 双路低压断路器
ISL6174
型号: ISL6174
厂家: Intersil    Intersil
描述:

Dual Low Voltage Circuit Breaker
双路低压断路器

断路器
文件: 总16页 (文件大小:346K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ISL6174  
®
Data Sheet  
December 19, 2008  
FN6830.0  
Dual Low Voltage Circuit Breaker  
Features  
This IC targets dual voltage hot swap applications across the  
+2.5V to +3.3V (nominal) bias supply voltage range with a  
second lower voltage rail down to less than 1V where a circuit  
breaker response to an over current event is preferred.  
It features a charge pump for driving external N-Channel  
MOSFETs, accurate programmable circuit breaker current  
thresholds and delay output undervoltage monitoring and  
reporting and adjustable soft-start.  
• Fast Circuit Breaker Quickly Responds to Overcurrent  
Fault Conditions  
• Less than 1µs Response Time to Dead Short  
• Programmable Circuit Breaker Level and Delay  
• Two Levels of Overcurrent Detection Provide Fast  
Response to Varying Fault Conditions  
• Overcurrent Circuit Breaker and Fault Isolation Functions  
• Adjustable Circuit Breaker Threshold as Low as 20mV  
The circuit breaker current level (I ) for each rail is set by  
CB  
• Adjustable Voltage Ramp-up for In-Rush Protection  
During Turn-On  
two external resistors, and for each rail a delay (t  
is set by  
CB)  
has expired,  
an external capacitor on the TCB pin. After t  
CB  
• Rail Independent Control, Monitoring and Reporting I/O  
• Dual Supply Hot Swap Power Distribution Control to <1V  
• Charge Pump Allows the Use of N-Channel MOSFETs  
• QFN Package:  
the IC then quickly pulls down the associated GATE(s)  
output turning off its external FET(s).  
Ordering Information  
TEMP.  
- Compliant to JEDEC PUB95 MO-220  
QFN - Quad Flat No Leads - Package Outline  
PART NUMBER  
(Note)  
PART  
MARKING  
RANGE  
(°C)  
PACKAGE  
(Pb-Free)  
PKG.  
DWG. #  
- Near Chip Scale Package Footprint, Which Improves  
PCB Efficiency and has a Thinner Profile  
ISL6174IRZ*  
ISL6174 IRZ -40 to +85 28 Ld 5x5 QFN L28.5x5  
ISL617XEVAL1Z Evaluation Platform  
• Pb-Free (RoHS Compliant)  
*Add “-T” suffix for tape and reel. Please refer to TB347 for details on  
reel specifications.  
Applications  
NOTE: These Intersil Pb-free plastic packaged products employ  
special Pb-free material sets, molding compounds/die attach materials,  
and 100% matte tin plate plus anneal (e3 termination finish, which is  
RoHS compliant and compatible with both SnPb and Pb-free soldering  
operations). Intersil Pb-free products are MSL classified at Pb-free  
peak reflow temperatures that meet or exceed the Pb-free  
requirements of IPC/JEDEC J STD-020.  
• Power Supply Sequencing, Distribution and Control  
• Hot Swap / Electronic Circuit Breaker Circuits  
R
1
V1(IN)  
V1(OUT)  
SNS  
Pinout  
ISL6174  
(28 LD QFN)  
TOP VIEW  
VS1 SNS1 GT1 VO1  
UV1  
EN1 EN2  
BIAS  
PG1  
FLT1  
SS1  
CPQ+  
CPQ-  
CPVDD  
OCREF  
SS2  
ISL6174  
28 27 26 25 24 23 22  
SNS1  
VO1  
SS1  
1
2
3
4
5
6
7
21 SNS2  
20 VO2  
FLT2  
PG2  
PGND  
GND  
TCB1  
UV2  
SNS2 GT2 VO2  
19  
SS2  
18 GT2  
17  
TCB2 VS2  
GT1  
FLT1  
PG1  
TCB1  
FLT2  
16 PG2  
V2(OUT)  
V2(IN)  
15 TCB2  
R
2
SNS  
8
9
10 11 12 13 14  
FIGURE 1. TYPICAL APPLICATION  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2008. All Rights Reserved  
1
All other trademarks mentioned are the property of their respective owners.  
ISL6174  
Block Diagram  
Io  
LOAD  
Vin  
Vo  
Rsns  
Q
Iset Rset  
10V  
24µA  
Soft Start  
Amplifier  
CPVDD  
10µA  
-
42µA  
SS1  
+
1k  
Css  
-
+
WOC  
FLT1  
Comparator  
OC Timer  
&
1.178V  
+
Logic  
Iref  
OCREF  
Rref  
CPVDD  
10µA  
-
OC  
Iref  
4
Current  
Mirror  
Comparator  
PG1  
BIAS  
10K  
TCB1  
+
-
t
CB1  
EN1  
1.178V  
633mV  
Timeout  
Rs1  
Rs2  
Comparator  
-
UV1  
BIAS  
UV  
+
Comparator  
CPQ+  
Cp  
10V(out)  
X2  
Charge  
Pump  
X2  
Charge  
Pump  
CPQ-  
CPVDD  
Cv  
633mV  
POR and  
Bandgap  
1.178V  
ISL6173  
FIGURE 2. ISL6174 - INTERNAL BLOCK-DIAGRAM OF THE IC - CHANNEL ONE ONLY  
FN6830.0  
December 19, 2008  
2
ISL6174  
Pinout  
28 LEAD QFN  
TOP VIEW  
28  
27  
26  
25  
24  
23  
22  
SNS1  
VO1  
SS1  
1
2
3
4
5
6
7
21 SNS2  
20 VO2  
19  
18 GT2  
17  
SS2  
GT1  
FLT1  
PG1  
TCB1  
FLT2  
16 PG2  
15 TCB2  
8
9
10  
11  
12  
13  
14  
Pin Descriptions  
PIN  
NAME  
FUNCTION  
DESCRIPTION  
1
SNS1  
Current Sense Input  
This pin is connected to the current sense resistor and control MOSFET Drain node. It provides  
current sense signal to the internal comparator in conjunction with VS1 pin.  
2
3
VO1  
SS1  
Output Voltage 1  
This pin is connected to the control MOSFET switch source, which connects to a load. Internally, this  
voltage is used for SS control.  
Soft-Start Duration Set A capacitor from this pin to ground sets the output soft-start ramp slope. This capacitor is charged by  
Input  
the internal 10µA current source setting the soft-start ramp. The output voltage ramp tracks the SS  
ramp by controlled enhancement of FET gate. Once ramp-up is completed, the capacitor continues  
to charge to the CPVDD voltage rail. If common capacitor is used (by tying SS1, SS2 together and  
the capacitor to GND from the connection) then both the outputs track each other as they ramp up.  
4
5
6
7
GT1  
FLT1  
PG1  
Gate Drive Output  
Fault Output  
Direct connection to the gate of the external N-Channel MOSFET. At turn-on the Gate will charge to  
4 X Vbias or 10V(max) from the 24µA source.  
This is an open drain output. It asserts (pulls low) once the circuit breaker delay (determined by the  
TCB timeout cap) has expired. This output is valid for Vbias>1V.  
Power Good Output  
This is an active low, open drain output. When asserted (logic zero), it indicates that the voltage on  
UV1 pin is more than 643mV (633mV + 10mV hysteresis). This output is valid at VBIAS >1V.  
TCB1  
Circuit Breaker Delay  
Timer  
A capacitor from this pin to ground sets the delay from the onset of an over current event to channel  
shutdown (circuit breaker delay). Once the voltage on TCB cap reaches V  
pulled down and the FLT is asserted.  
the GATE output is  
CT_Vth  
The time for circuit breaker delay (t ) = (C  
CB  
*1.178)/10µA.  
TCB  
8
9
DNC  
GND  
Do not connect  
Chip Gnd  
Do not connect  
This pin is also internally shorted to the metal tab at the bottom of the IC.  
Charge pump ground. Both GND and PGND must be tied together externally.  
10  
11  
PGND  
CPQ-  
ChargePumpCapacitor Flying cap lowside.  
Low Side  
FN6830.0  
December 19, 2008  
3
ISL6174  
Pin Descriptions (Continued)  
PIN  
NAME  
FUNCTION  
DESCRIPTION  
12  
BIAS  
Chip Bias Voltage  
Provides IC Bias. Should be 2V to 4V for IC to function normally. This pin can be powered from a  
supply voltage that is not being controlled. It is preferable to use 3.3V even if the channels being  
controlled are 2.5V or lower because more gate drive voltage will be available to the MOSFETs.  
13  
14  
CPQ+  
ChargePumpCapacitor Flying cap highside. Use of 0.1µF for 2.5V bias and 0.022µF for 3.3V bias is recommended.  
High Side  
CPVDD Charge Pump Output  
This is the voltage used for some internal pull-ups and bias. Use of 0.47µF (minimum) is  
recommended.  
15  
16  
17  
18  
19  
TCB2  
PG2  
FLT2  
GT2  
Timer Capacitor  
Power Good Output  
Fault Output  
Same function as pin 7  
Same function as pin 6  
Same as pin 5  
Gate Drive Output  
Same as pin 4  
SS2  
Soft-Start Duration Set Same as pin 3  
Input  
20  
21  
22  
VO2  
SNS2  
VS2  
Output Voltage 2  
Same as pin 2  
Same as pin 1  
Current Sense Input  
Current Sense  
Reference  
Voltage input for one of the two voltages. Provides a 20µA current source for the ISET series resistor  
which sets the voltage to which the sense resistor IR drop is compared.  
23  
UV2  
EN2  
Undervoltage Monitor  
Input  
This pin is one of the two inputs to the undervoltage comparator. The other input is the 633mV  
reference. It is meant to sense the output voltage through a resistor divider. If the output voltage  
drops so that the voltage on the UV pin goes below 633mV, PG2 is deasserted.  
24  
25  
Enable  
This is an active low input. When asserted (pulled low), the SS and gate drive are released and the  
output voltage gets enabled. When deasserted (pulled high or left floating), the reverse happens.  
OCREF Ref. Current Adj.  
Allows adjustment of the reference current through R  
thus setting the thresholds for CR, OC and WOC.  
and the internal Circuit Breaker set resistor,  
SET  
26  
27  
EN1  
UV1  
Enable Input  
Same as pin 24  
Same as pin 23  
Undervoltage Monitor  
Input  
28  
VS1  
Current Sense  
Reference  
Same as pin 22  
FN6830.0  
December 19, 2008  
4
ISL6174  
Absolute Maximum Ratings  
Thermal Information  
VBIAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5.5V  
GTx, CPQ+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +12V  
ENx, SNSx, PGx, FLTx, VSx, TCBx, UVx,  
SSx, CPQ-, CPVDD. . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.5VDC  
Output Current . . . . . . . . . . . . . . . . . . . . . . .Short Circuit Protected  
Thermal Resistance (Typical, Notes 1, 4)  
5x5 QFN Package . . . . . . . . . . . . . . . .  
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C  
For recommended soldering conditions, see Tech Brief TB389.  
(QFN - Leads Only)  
θ
(°C/W)  
42  
θ
(°C/W)  
JA  
JC  
12.5  
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
Operating Conditions  
VBIAS / VIN1 Supply Voltage Range. . . . . . . . . . . +2.25V to +3.63V  
Temperature Range (T )  
-40°C to +85°C  
A
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and  
result in failures not covered by warranty.  
NOTES:  
1. θ is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
JA  
Tech Brief TB379.  
2. All voltages are relative to GND, unless otherwise specified.  
3. 1V (min) on the BIAS pin required for FLT to be valid.  
4. For θ , the “case temp” location is the center of the exposed metal pad on the package underside..  
JC  
Electrical Specifications  
V
= 2.5V to +3.3V, V = 1V,T = T = -40°C to +85°C, Unless Otherwise Specified. Parameters with MIN  
DD S A J  
and/or MAX limits are 100% tested at +25°C, unless otherwise specified.  
Temperature limits established by characterization and are not production tested.  
PARAMETER  
CIRCUIT BREAKER CONTROL  
ISET Current  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
I
R
= 14.7kΩ  
19  
20  
21  
µA  
mV  
mV  
SET  
OCREF  
Over Current Comparator Offset Voltage  
Circuit Breaker Threshold Voltage  
Vio  
V
V
- V  
- V  
with I  
= 0A  
-1.25  
-0.05  
19.7  
1.25  
VS  
SNS  
SNS  
OUT  
at FLT assertion,  
= 20µA  
V
V
CRVTH  
VS  
R
= 1.0k, I  
ISET  
SET  
TCB Threshold Voltage  
TCB Charging Current  
TCB Default Delay  
Peak Voltage  
TCB = Open  
GATE open  
1.128  
9
1.178  
10  
1.202  
11  
V
CT_Vth  
I
µA  
µs  
CT  
T
3
CT  
GATE DRIVE  
GATE Response Time from WOC (Open)  
pd_woc_open  
pd_woc_load  
3
ns  
ns  
100mV of overdrive on the WOC  
comparator  
GATE Response Time from WOC  
(Loaded)  
GATE = 1nF  
100mV of overdrive on the WOC  
comparator  
100  
GATE Turn-On Current  
GATE Turn-Off Current  
GATE Voltage  
IGATE_on  
IGATE_off  
GATE = 2V, V = 2V, V  
VS  
= 2.1V  
21  
24  
100  
8.8  
7
27  
µA  
mA  
V
SNS  
OC or WOC Turn-off Gate Current  
Bias = 2.5V (Figure 5, 6)  
V
8.2  
9.3  
GATE  
2.1 < Bias < 2.5 (Figure 5, 6)  
V
BIAS  
Supply Current  
I
V
= 3.3V  
6
9.3  
2.02  
1.98  
33  
12  
mA  
V
BIAS  
BIAS  
POR Rising Threshold  
POR Falling Threshold  
POR Threshold Hysteresis  
VIN_POR_L2H  
VIN_POR_H2L  
VIN_POR_HYS  
1.85  
1.80  
5
2.12  
2.10  
V
mV  
FN6830.0  
December 19, 2008  
5
ISL6174  
Electrical Specifications  
V
= 2.5V to +3.3V, V = 1V,T = T = -40°C to +85°C, Unless Otherwise Specified. Parameters with MIN  
DD  
S
A
J
and/or MAX limits are 100% tested at +25°C, unless otherwise specified.  
Temperature limits established by characterization and are not production tested. (Continued)  
PARAMETER  
I/O  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Undervoltage Comparator Falling  
Threshold  
V
620  
635  
650  
mV  
UV_VTHF  
Undervoltage Comparator Hysteresis  
EN Rising Threshold  
EN Falling Threshold  
EN Hysteresis  
V
9
17  
25  
2.25  
1.20  
1175  
0.3  
mV  
V
UV_HYST  
PWR_Vth_R  
PWR_Vth_F  
PWR_HYST  
V
V
V
= 2.5V  
= 2.5V  
= 2.5V  
1.75  
0.97  
600  
0.05  
0.05  
9
2.04  
1.11  
905  
0.15  
0.15  
10  
BIAS  
BIAS  
BIAS  
V
mV  
V
PG Pull-Down Voltage  
FLT Pull-Down Voltage (Note 3)  
Soft-Start Charging Current  
CHARGE PUMP  
I
I
= 8mA  
PG  
VOL_PG  
VOL_FLT  
= 8mA  
0.3  
V
FLT  
I
VSS = 1V  
11  
µA  
SS  
CPVDD  
V_CPVDD  
V_CPVDD  
V
V
= 3.3V  
= 3.3V  
4.9  
5.2  
5.0  
5.5  
V
V
BIAS  
CPVDD  
BIAS  
T = +25°C  
External User Load = 6mA  
FN6830.0  
December 19, 2008  
6
ISL6174  
Typical Performance Curves (at +25°C unless otherwise specified)  
12  
10  
8
1.04  
1.02  
1.00  
0.98  
0.96  
0.94  
6
4
2
C
= 22nF, C  
2.9  
= 0.47µF  
3.7  
PQ  
PVDD  
-40  
0
25  
70  
85  
125  
0
1.0  
1.4  
1.7  
2.0  
2.3  
3.2  
TEMPERATURE (°C)  
V_BIAS(V)  
FIGURE 3. I_BIAS vs V_BIAS  
FIGURE 4. NORMALIZED I BIAS (VBIAS = 3.3V) vs  
TEMPERATURE  
12.0  
10.0  
8.0  
12.0  
10.0  
8.0  
6.0  
6.0  
C
= 0.1µF, C = 0.47µF  
PVDD  
PQ  
4.0  
4.0  
2.0  
0.0  
C
= 22nF, C = 0.47µF  
PVDD  
PQ  
2.0  
0.0  
2.0 2.2 2.4  
2.6 3.8  
3.0  
3.2 3.4 3.6 3.8 4.0  
2.0 2.2 2.4  
2.6 3.8  
3.0 3.2 3.4 3.6 3.8 4.0  
V BIAS(V)  
V BIAS (V)  
FIGURE 6. V  
vs V_BIAS  
FIGURE 5. V  
vs V_BIAS  
GATE  
GATE  
25.0  
24.8  
24.6  
24.4  
24.2  
24.0  
23.8  
23.6  
23.4  
23.2  
23.0  
9.2  
9.0  
8.8  
8.6  
8.4  
8.2  
8.0  
-40  
0
25  
70  
85  
125  
-40  
0
25  
70  
85  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
FIGURE 7. GATE VOLTAGE vs TEMPERATURE  
FIGURE 8. GATE TURN-ON CURRENT vs TEMPERATURE  
FN6830.0  
December 19, 2008  
7
ISL6174  
Typical Performance Curves (at +25°C unless otherwise specified) (Continued)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
25  
23  
21  
19  
17  
15  
13  
I
= 20µA, R  
= 1.0k  
SET  
SET  
-40  
0
25  
70  
85  
125  
-40  
0
25  
70  
85  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
FIGURE 9. CIRCUIT BREAKER GATE TURN-OFF CURRENT  
vs TEMPERATURE  
FIGURE 10. CIRCUIT BREAKER Vth vs TEMPERATURE  
21.00  
20.80  
20.60  
20.40  
20.20  
20.00  
19.80  
19.60  
19.40  
19.20  
19.00  
660  
655  
650  
RISING VTH  
645  
640  
635  
630  
FALLING VTH  
625  
620  
-40  
0
25  
70  
85  
125  
-40  
0
25  
70  
85  
125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
FIGURE 11. UNDERVOLTAGE Vth vs TEMPERATURE  
10000  
FIGURE 12. I  
SET  
vs TEMPERATURE  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1000  
100  
10  
1
100  
150  
200  
OC (% OF LIMIT)  
250  
300  
0
0.1  
0.47  
1.0  
2.0  
(nF)  
4.0  
8.7  
14  
22  
C
G
FIGURE 14. RESPONSE TIME vs I *R  
SNS  
O
FIGURE 13. WOC RESPONSE vs LOAD CAPACITANCE  
FN6830.0  
December 19, 2008  
8
ISL6174  
(SNS) and voltage set (VS) pins. The latter is through a  
resistor, R , as shown. Two levels of overcurrent  
Detailed Description of Operation  
SET  
ISL6174 targets dual voltage hot-swap applications with a  
bias of 2.1V to 3.6VDC and the voltages being controlled  
down to 0.7VDC. The IC’s main functions are to control start-  
up inrush current and provide circuit breaker protection of  
the sourcing supplies from OC loads. This is achieved by  
enhancing an external MOSFET in a controlled manner. In  
order to fully enhance the MOSFET, the IC must provide  
adequate gate to source voltage, which is typically 5V or  
greater. Hence, the final steady-state voltage on Gate (GT)  
pin must be a minimum of 5V above the load voltage. Two  
internal charge-pumps allow this to happen.  
detection are available to protect against all possible fault  
scenarios. These levels are:  
• Timed Circuit Breaker (CB)  
• Way Overcurrent Circuit Breaker (WOC)  
Each of these modes is described in detail as follows:  
TIMED CIRCUIT BREAKER (CB) MODE  
When the load current reaches the Circuit Breaker threshold  
(I ) the ISL6174 enters the timed Circuit Breaker Mode.  
CB  
When the circuit enters this mode, the OC comparator which  
directly looks at the voltage drop across R  
detects it and  
SNS  
VIN  
VO  
starts the CB delay timer. TCB begins to charge whatever  
capacitance is on that pin from an internal 10µA current  
source. The amount of time it takes for this capacitance to  
Q
charge to ~1.18V (V  
) sets up the Circuit Breaker delay.  
CT_Vth  
Upon expiration of the CB delay (t ), the MOSFET gate is  
CB  
VIN  
pulled down quickly.  
10V  
If during and prior to t  
expiring the load current falls below  
then in that case, the Circuit Breaker mode is no longer  
CB  
0
I
CPVDD  
24µA  
CB  
SOFT-  
START  
AMPLIFIER  
active and the IC discharges the C  
TCB  
The Circuit Breaker threshold (I ) is set by sinking a  
CB  
cap.  
CPVDD  
10µA  
0
-
reference current, I  
, through R  
by selecting an  
42µA  
SET SET  
SS1  
+
appropriate resistor between OCREF and GND, which sets  
+
-
I
. The relationship between I  
REF REF  
and I  
SET  
is I  
=
REF  
4*I = Vocref/Rocref = 1.178/Rocref. I  
, where I  
SET  
would typically be set at 80µA. This I  
REF  
REF  
* R  
SET  
voltage is  
SET  
FIGURE 15. SOFT-START OPERATION  
then compared to the voltage across a load current series  
sense low ohmic resistor.  
Controlled Soft-Start  
Selecting appropriate values for R  
and R  
SNS  
such that  
SET  
The output voltages are monitored through the Vo pins and  
slew up at a rate determined by the capacitors on the  
Soft-start (SS) pin, as illustrated in Figure 15. 24µA of gate  
charge current is available. The soft-start amplifier controls  
the output voltage by robbing some of the gate charge  
current thus slowing down the MOSFET enhancement.  
When the load voltage reaches its set level, as sensed by its  
respective UV pin through an external resistor divider, the  
Power Good (PG) output goes active.  
when I = I  
,
O
CR  
(EQ. 1)  
Io*R  
SNS  
= I  
SET SET  
*R  
WAY OVERCURRENT CIRCUIT BREAKER (WOC) MODE  
This mode is designed to handle very fast, very low  
impedance shorts on the load side, which can result in very  
high di/dt transients on the input current. The WOC circuit  
breaker level is typically 200% of the Circuit Breaker limit. In  
this mode the comparator, which directly looks at the voltage  
Current Monitoring and Circuit Breaker Protection  
drop across R  
and once the WOC level is exceeded the  
SNS  
The IC monitors the load current (Io) by sensing the  
voltage-drop across the low value current sense resistor  
IC pulls the gate very quickly to GND, the SSx capacitor is  
discharged, FLT is asserted and a new SS sequence is  
allowed to begin after ENx recycle.  
(R  
), which is connected in series with the MOSFET (as  
SNS  
shown in the “Block Diagram” on page 2), through Sense  
FN6830.0  
December 19, 2008  
9
ISL6174  
7. If the load current on the output exceeds the set current  
limit for greater than the circuit breaker delay, FLT gets  
asserted and the channel shutdown occurs.  
I
o
V
V
-
O
+
IN  
Q
+
Rsns  
8. If the voltage on UV pin exceeds 633mV threshold as a  
result of rising Vo, the Power Good (PG) output goes  
active.  
I
R
SET SET  
-
9. At the end of the SS interval, the SS cap voltage reaches  
CPVDD and remains charged as long as EN remains  
asserted or there is no other fault condition present that  
would attempt to pull down the gate.  
OC COMPARATOR  
-
GATE  
ISL6174  
PULLDOWN  
CURRENT  
Applications Information  
+
Selection of External Components  
3k  
-
The typical application circuit of Figure 2 has been used for  
this section, which provides guidelines to select the external  
component values.  
+
25Ω  
WOC  
COMPARATOR  
MOSFET (Q1)  
This component should be selected on the basis of its  
r
specification at the expected Vgs (gate to source  
DS(ON)  
voltage) and the effective input gate capacitance (Ciss). One  
needs to ensure that the combined voltage drop across the  
FIGURE 16. OC / WOC OPERATION  
Rsense and r  
at the desired maximum current  
DS(ON)  
Bias and Charge Pump Voltages:  
(including transients) will still keep the output voltage above  
the minimum required level.  
The BIAS pin feeds the chip bias voltage directly to the first  
of the two internal charge pumps, which are cascaded. The  
output of the first charge pump, in addition to feeding the  
second charge pump, is accessible on the CPVDD pin. The  
voltage on the CPVDD pin is approximately 5V. It also  
provides power to the POR and band-gap circuitry as shown  
in the block diagram. A capacitor connected externally  
across CPQ+ and CPQ- pins of the IC is the “flying” cap for  
the charge-pump.  
Ciss of the MOSFET influences the overcurrent response  
time. It is recommended that a MOSFET with Ciss of less  
than 10nF be chosen. Ciss will also have an impact on the  
SS cap value selection as seen later.  
Current Sense Resistor (R  
)
SNS  
The voltage drop across this resistor, which represents the  
load current (Io), is compared against the set threshold of  
the Circuit Breaker comparator. The value of this resistor is  
determined by how much combined voltage drop is tolerable  
between the source and the load. It is recommended that at  
least 20mV drop be allowed across this resistor at max load  
current. This resistor is expected to carry maximum full load  
The second charge-pump is used exclusively to drive the  
gates of the MOSFETs during soft start through the 24µA  
current sources, one for each channel. The output of this  
charge pump is approximately 10V as shown in the “Block  
Diagram” on page 2.  
current indefinitely. Hence, the power rating of this resistor  
2
Typical Hot-plug Power Up Sequence  
must be greater than I  
*R  
.
SNS  
O(MAX)  
1. When power is applied to the IC on the BIAS pin, the first  
charge pump immediately powers up.  
This resistor is typically a low value resistor and hence the  
voltage signal appearing across it is also small. In order to  
maintain high current sense accuracy, current sense trace  
routing is critical. It is recommended that either a four wire  
resistor or the routing method as shown in Figure 17 be  
used.  
2. If the BIAS voltage is 2.1V or higher, the IC comes out of  
POR. Both SS and TCB caps remain discharged and the  
gate (GT) voltage remains low.  
3. ENx pin, when pulled below it’s specified threshold,  
enables the respective channel.  
4. SSx cap begins to charge up through the internal 10µA  
current source, the gate (GT) voltage begins to rise and  
the corresponding output voltage begins to rise at the  
same rate as the SS cap voltage. This is tightly controlled  
by the soft-start amplifier shown in the block diagram.  
5. SS cap begins to charge but the corresponding TCBx cap  
is held discharged.  
6. Fault (FLT) remains deasserted (stays high) and the  
output voltage continues to rise.  
FN6830.0  
December 19, 2008  
10  
ISL6174  
Time-out Capacitor Selection (C )  
T
This capacitor determines the current regulation delay  
period. As shown in Figure 2, when the voltage across this  
capacitor exceeds 1.178V, the time-out comparator detects it  
and the gate voltage is pulled to 0V thus shutting down the  
channel. An internal 10µA current source charges this  
capacitor. Hence, the value of this capacitor is determined by  
Equation 2.  
LOAD CURRENT CARRYING  
TRACES  
(EQ. 2)  
C = (10μA T  
) ⁄ 1.178  
OUT  
CURRENT  
SENSE  
R
T
SNS  
TRACES  
Where,  
FIGURE 17. RECOMMENDED CURRENT SENSE RESISTOR  
PCB LAYOUT  
T
= Desired time-out period.  
OUT  
Soft-Start Capacitor Selection (C  
)
SS  
The rate of change of voltage (dv/dt) on this capacitor, which  
is determined by the internal 10µA current source, is the  
same as that on the output load capacitance. Hence, the  
value of this capacitor directly controls the inrush current  
amplitude during hot swap operation.  
Current Set Resistor (R  
)
SET  
This resistor sets the threshold for the Circuit Breaker  
comparator in conjunction with R . Once R has been  
SNS SNS  
selected, use Equation 1 to calculate R . Use 20µA for  
SET  
I
in a typical application.  
SET  
(EQ. 3)  
C
= C • (10μA I  
)
INRUSH  
SS  
O
Reference Current Set Resistor (R  
)
REF  
This resistor sets up the current in the internal current  
source, I /4, shown in Figure 2 for the comparators. The  
Where,  
REF  
voltage at the OCREF pin is the same as the internal  
C
= Load Capacitance  
O
bandgap reference. The current (I  
resistor is simply:  
) flowing through this  
REF  
I
I
= Desired Inrush Current  
INRUSH  
INRUSH  
is the sum of the DC steady-state load current and  
I
= 1.178/R  
REF  
REF  
the load capacitance charging current. If the DC steady-state  
load remains disabled until after the soft-start period expires  
(PGx could be used as a load enable signal, for example),  
then only the capacitor charging current should be used as  
This current, I  
, should be set at 80µA to force 20µA in the  
REF  
internal current source as shown in Figure 2, because of the  
4:1 current mirror. This equates to the resistor value of  
14.7k.  
I
. The Css value should always be more than (1/2.4)  
INRUSH  
of that of Ciss of the MOSFET to ensure proper soft-start  
operation. This is because the Ciss is charged from 24µA  
current source, whereas the Css gets charged from a 10µA  
Selection of Rs1 and Rs2  
These resistors set the UV detect point. The UV comparator  
detects the undervoltage condition when it sees the voltage  
at UV pin drop below 0.633V. The resistor divider values  
should be selected accordingly.  
current source (Figure 15). In order to make sure both V  
SS  
and V track during the soft-start, this condition is  
O
necessary.  
Charge Pump Capacitor Selection (C and C )  
P
V
ISL6174 Evaluation Platform  
C is the “flying cap” and C is the smoothing cap of the  
P
V
The ISL617XEVAL1Z is the primary evaluation board for this  
IC. For the BOM, schematic and photograph, see the “BOM  
for ISL617XEVAL1Z Board and Schematic” on page 15.  
charge pump, which operates at 450kHz set internally. The  
output resistance of the charge pump, which affects the  
regulation, is dependent on the C value and its ESR,  
P
charge-pump switch resistance, and the frequency and ESR  
The evaluation board has been designed with a typical  
application in mind and with accessibility to all the featured  
pins to enable a user to understand and verify these features  
of the IC. The two circuit breaker levels are programmed to  
2.2A for each input rail but they can easily be scaled up or  
down by adjusting some component values.  
of the smoothing cap, C .  
V
It is recommended that C be kept within 0.022µF  
P
(minimum) to 0.1µF (maximum) range. Only ceramic  
capacitors are recommended. Use 0.1µF cap if CPVDD  
output is expected to power an external circuit, in which case  
the current draw from CPVDD must be kept below 10mA.  
There are two input voltages, one for each channel that are  
switched by a dual N-Channel MOSFET (Q1) to the output  
connectors.  
C should at least be 0.47µF (ceramic only). Higher values  
V
may be used if low ripple performance is desired.  
FN6830.0  
December 19, 2008  
11  
ISL6174  
Pins SS1 and SS2 of the IC are available as jumper test  
points so that they can be tied together to achieve  
concurrent tracking between Vo1 and Vo2. Both the EN  
inputs must be turned on together to check this function,  
jumpers are provide to facilitate this.  
GATE  
Each channel is preloaded with the resistive load that makes  
up the UV threshold level. Additional loading can be  
externally applied as desired.  
TCB  
Iin  
The internal Circuit Breaker amplifier is fast enough to  
respond to very fast di/dt events.  
On this board, the timeout capacitor value for side ‘1’ is  
0.15µF, which corresponds to a timeout period of 17.67ms.  
The scope shots are taken from the ISL6174EVAL1 to  
demonstrate the ISL6174s critical operational waveforms.  
FIGURE 19. TRANSIENT TO 3.9A OC CIRCUIT BREAKER  
OPERATION  
Figure 18 illustrates the circuit breaker operation which will  
be evident with a slow ramping output current at the  
The way to confirm WOC mode, is by looking at the TCB pin  
waveform. If no ramping is seen prior to GATE turn off, then  
WOC is active. The following waveform in Figure 20 shows  
WOC operation:  
programmed 2.2A level, I . This mode of operation will be  
CB  
invoked while the OC event is < ~2X the I . as shown in  
CB  
Figure 19. Characteristic of this operational mode is the TCB  
pin ramping to V  
to establish the circuit breaker delay.  
CB  
:
GATE  
GATE  
TCB  
TCB  
Iin  
Iin  
FIGURE 20. WOC CIRCUIT BREAKER OPERATION  
FIGURE 18. SLOW RAMPING TO 2.2A OC CIRCUIT BREAKER  
OPERATION  
Figure 21 is a 200X zoom of a WOC turn-off event and  
clearly illustrates the lack of any TCB ramping during this  
WOC event.  
FN6830.0  
December 19, 2008  
12  
ISL6174  
GATE  
GATE  
TCB  
TCB  
Iin  
Iin  
FIGURE 21. WOC CIRCUIT BREAKER OPERATION ZOOM  
FIGURE 23. TRANSIENT TO 3.9A OC CIRCUIT BREAKER  
OPERATION with TCB OPEN  
Figure 22 illustrates the GATE response time to an output  
short. The time from the input current > 2.2A (I ) to the  
CB  
FET gate being pulled down is ~0.6µs.  
Dual Voltage Tracking During Turn-on  
The ISL6174 Dual Circuit Breaker is also designed to  
provide either concurrent or ratiometric tracking of the two  
output voltages during turn-on. This capability is critical in  
providing power to many high value loads.  
GATE  
The two channels can be forced to track each other by  
simply tying their SS pins together and using a common SS  
capacitor, C . In addition, their EN pins also must be tied  
Iin  
SS  
together. Typical Start-up waveforms in this mode are shown  
in Figure 24, where the common C value is 0.066µF.  
SS  
V
O1  
FIGURE 22. SHORTED OUTPUT GATE RESPONSE  
The previous scope shots illustrate the performance with a  
V
O2  
~18ms circuit breaker delay, t  
as determined by the  
CB  
10.5µF cap on TCB pin. Figure 23 shows the performance  
with an open TCB pin for the same amplitude of OC event as  
shown in Figure 19. Once again, see the TCB pin ramp  
duration and t  
response.  
of ~3µs, the intrinsic delay of the IC OC  
CB  
FIGURE 24. CONCURRENT TRACKING MODE  
If one channel experiences a CB event and turns off, the  
other one will too.  
To achieve ratiometric tracking, the ratio of the two C must  
SS  
match the ratio of the two voltages being handled. In the  
illustrated case in Figure 25, the 1.5V to 3.3V ratio of 1:2.2 is  
FN6830.0  
December 19, 2008  
13  
ISL6174  
reflected in the choices of C cap values of 0.033µF and  
SS  
0.072µF. These cap values result in the performance  
demonstrated, the variance from a perfect match being the  
effect of variance in capacitor values, V and I  
SS  
SS.  
V
O1  
V
O2  
FIGURE 25. RATIOMETRIC TRACKING MODE  
ISL617XEVAL1Z Photograph  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN6830.0  
December 19, 2008  
14  
ISL6174  
BOM for ISL617XEVAL1Z Board and Schematic  
REFERENCE  
PART  
PKG  
MFG P/N  
ISL6174DRZ  
MANUFACTURER  
U1  
Circuit Breaker IC  
28 Ld 5X5  
QFN  
Intersil  
Q1  
FDS6912A  
0.033µF  
0.15µF  
0.47µF  
2.2µF  
0.1µF  
0.022µF  
0.22µF  
0.01  
SO8  
0402  
0402  
FDS6912A or equivalent  
Various  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
Any  
C1  
C2  
C7  
C3  
C5, C9  
C6, C11  
0402  
0402  
C10  
R7, R13  
2512  
R1  
3.57k  
2.55k  
14.7k  
0
0402  
R16  
0402  
R10  
0402  
R3  
0402  
R4, R5, R14, R15  
R8, R12  
10k  
0402  
1.1k  
0402  
R2, R6, R17, R18  
1k  
0402  
J_EN1, EN1-2, J_EN2, JRTR_LTCH, SS1_SS2 Jumper  
2 PIN, 0.1”  
ISL6174  
FN6830.0  
December 19, 2008  
15  
ISL6174  
Package Outline Drawing  
L28.5x5  
28 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
Rev 2, 10/07  
4X  
3.0  
5.00  
0.50  
24X  
A
6
B
PIN #1 INDEX AREA  
28  
22  
6
PIN 1  
INDEX AREA  
1
21  
3 .10 ± 0 . 15  
15  
7
(4X)  
0.15  
8
14  
0.10 M C A B  
- 0.07  
TOP VIEW  
28X 0.55 ± 0.10  
BOTTOM VIEW  
4
28X 0.25  
+ 0.05  
SEE DETAIL "X"  
C
0.10  
0 . 90 ± 0.1  
C
BASE PLANE  
SEATING PLANE  
0.08  
C
( 4. 65 TYP )  
(
( 24X 0 . 50)  
SIDE VIEW  
3. 10)  
(28X 0 . 25 )  
( 28X 0 . 75)  
5
C
0 . 2 REF  
0 . 00 MIN.  
0 . 05 MAX.  
TYPICAL RECOMMENDED LAND PATTERN  
DETAIL "X"  
NOTES:  
1. Dimensions are in millimeters.  
Dimensions in ( ) for Reference Only.  
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.  
3.  
Unless otherwise specified, tolerance : Decimal ± 0.05  
4. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
Tiebar shown (if present) is a non-functional feature.  
5.  
6.  
The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 identifier may be  
either a mold or mark feature.  
FN6830.0  
December 19, 2008  
16  

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