ISL84515IB
更新时间：2024-09-18 01:51:50
品牌：INTERSIL
描述：Low-Voltage, Single Supply, SPST, Analog Switches
概述
数据手册
替代型号ISL84515IB 概述
Low-Voltage, Single Supply, SPST, Analog Switches 低电压，单电源， SPST ，模拟开关 接口芯片
ISL84515IB 数据手册
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PDF下载ISL84514, ISL84515
®
Data Sheet
June 2003
FN6025.3
Low-Voltage, Single Supply, SPST,
Analog Switches
Features
• Drop-in Replacements for MAX4514 and MAX4515
• Available in SOT-23 Packaging
The Intersil ISL84514 and ISL84515 devices are precision,
analog switches designed to operate from a single +2.4V to
+12V supply. Targeted applications include battery powered
equipment that benefit from the devices’ low power
• Fully Specified for 5V and 12V Supplies
• Single Supply Operation. . . . . . . . . . . . . . . . . +2.4V to +12V
consumption (5µW), and low leakage currents (1nA). Low
• ON Resistance (R
ON
Max). . . . . . . . . . . . . 20Ω (V+ = 5V)
10Ω (V+ = 12V)
R
and fast switching speeds over a wide operating supply
ON
range make these switches ideal for use in industrial
equipment, portable instruments, and as input signal
multiplexers for new generation, low supply voltage data
converters. Some of the smallest packages available alleviate
board space limitations, and make Intersil’s newest line of
low-voltage switches an ideal solution for space constrained
products.
• R
ON
Flatness (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Ω
• Charge Injection (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . 10pC
• Low Power Consumption (P ). . . . . . . . . . . . . . . . . . . .<5µW
D
• Low Leakage Current (Max at 85oC) . 20nA (Off Leakage)
40nA (On Leakage)
The ISL8451X are single-pole/single-throw (SPST) switches,
with the ISL84514 being normally open (NO), and the
ISL84515 being normally closed (NC).
• Fast Switching Action
- t
- t
(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150ns
ON
(Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ns
OFF
Table 1 summarizes the performance of this family. For higher
performance, pin compatible versions, see the ISL43110,
ISL43111 data sheet. For ±5V supply versions, see the
ISL84516, ISL84517 data sheet.
• Minimum 2000V ESD Protection per Method 3015.7
• TTL, CMOS Compatible
Applications
TABLE 1. FEATURES AT A GLANCE
• Battery Powered, Handheld, and Portable Equipment
• Communications Systems
- Radios
ISL84514
1
ISL84515
1
Number of Switches
Configuration
- Telecom Infrustructure
NO
NC
• Test Equipment
3.3V R
20Ω
20Ω
ON
- Logic and Spectrum Analyzers
- Portable Meters
3.3V t /t
60ns/30ns
12Ω
60ns/30ns
12Ω
ON OFF
5V R
ON
• Medical Equipment
- Ultrasound and MRI
- Electrocardiograph
5V t /t
45ns/25ns
8Ω
45ns/25ns
8Ω
ON OFF
12V R
ON
12V t /t
• Audio and Video Switching
40ns/25ns
40ns/25ns
ON OFF
Packages
8 Ld SOIC, 5 Ld SOT-23
• General Purpose Circuits
- +3V/+5V DACs and ADCs
- Sample and Hold Circuits
- Digital Filters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
- Operational Amplifier Gain Switching Networks
- High Frequency Analog Switching
- High Speed Multiplexing
• Application Note AN557 “Recommended Test Procedures
for Analog Switches”
- Integrator Reset Circuits
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
ISL84514, ISL84515
Pinouts (Note 1)
ISL84514 (SOIC)
ISL84514 (SOT-23)
TOP VIEW
TOP VIEW
V+
IN
COM
NO
1
2
3
5
4
COM
1
8
7
6
5
NO
GND
IN
2
3
4
N.C.
N.C.
GND
V+
N.C.
ISL84515 (SOIC)
TOP VIEW
ISL84515 (SOT-23)
TOP VIEW
V+
IN
COM
1
2
3
4
8
7
6
5
COM
NC
1
2
3
5
4
NC
GND
IN
N.C.
N.C.
GND
V+
N.C.
NOTE:
1. Switches Shown for Logic “0” Input.
Truth Table
Ordering Information
LOGIC
ISL84514
OFF
ISL84515
ON
TEMP.
PART NO.
(BRAND)
RANGE
0
1
o
( C)
PACKAGE
PKG. DWG. #
M8.15
ON
OFF
ISL84514IB
-40 to 85
-40 to 85
8 Ld SOIC
NOTE: Logic “0” ≤ 0.8V. Logic “1” ≥ 2.4V.
ISL84514IB-T
8 Ld SOIC
M8.15
Tape and Reel
ISL84514IH-T
(514I)
-40 to 85
5 Ld SOT-23,
Tape and Reel
P5.064
Pin Description
PIN
FUNCTION
ISL84515IB
-40 to 85
-40 to 85
8 Ld SOIC
M8.15
M8.15
V+
System Power Supply Input (+2.4V to +12V)
Ground Connection
ISL84515IB-T
8 Ld SOIC
Tape and Reel
GND
IN
ISL84515IH-T
(515I)
-40 to 85
5 Ld SOT-23,
Tape and Reel
P5.064
Digital Control Input
COM
NO
Analog Switch Common Pin
Analog Switch Normally Open Pin
Analog Switch Normally Closed Pin
No Internal Connection
NC
N.C.
2
ISL84514, ISL84515
Absolute Maximum Ratings
Thermal Information
o
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V
Input Voltages
IN (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
NO, NC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Output Voltages
Thermal Resistance (Typical, Note 3)
θ
( C/W)
JA
5 Ld SOT-23 Package . . . . . . . . . . . . . . . . . . . . . . .
8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . .
225
170
o
Maximum Junction Temperature (Plastic Package) . . . . . . . 150 C
Moisture Sensitivity (See Technical Brief TB363)
COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 20mA
Peak Current NO, NC, or COM
All Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
o
o
Maximum Storage Temperature Range. . . . . . . . . . . . -65 C to 150 C
o
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300 C
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . . . 30mA
ESD Rating (Per MIL-STD-883 Method 3015). . . . . . . . . . . . . >2kV
(Lead Tips Only)
Operating Conditions
Temperature Range
ISL8451XIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to 85 C
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on NO, NC, COM, or IN exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
3. θ is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
JA
Electrical Specifications Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, V
= 2.4V, V
= 0.8V (Note 4),
INL
INH
Unless Otherwise Specified
TEMP (NOTE 5)
(NOTE 5)
MAX
o
PARAMETER
TEST CONDITIONS
( C)
MIN
TYP
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
Full
25
0
-
-
V+
20
25
3
V
Ω
ANALOG
ON Resistance, R
V+ = 4.5V, I
= 1.0mA, V
V+ = 4.5V, I = 1.0mA, V
COM
= 3.5V,
-
ON
COM
(See Figure 4)
COM
COM
Full
25
-
-
Ω
R
Flatness, R
= 1V, 2V, 3V
-
-
Ω
ON
FLAT(ON)
Full
25
-
-
5
Ω
NO or NC OFF Leakage Current,
or I
V+ = 5.5V, V
(Note 6)
= 1V, 4.5V, V
= 4.5V, 1V, V
or V
or V
= 4.5V, 1V,
= 1V, 4.5V,
-1
-20
-1
-20
-2
-40
0.01
1
nA
nA
nA
nA
nA
nA
COM
COM
COM
NO
NC
I
NO(OFF)
NC(OFF)
Full
25
-
0.01
-
20
1
COM OFF Leakage Current,
V+ = 5.5V, V
(Note 6)
NO
NC
I
COM(OFF)
Full
25
20
2
COM ON Leakage Current,
V+ = 5.5V, V
4.5V, (Note 6)
= 1V, 4.5V, or V
or V
= 1V,
NC
0.01
-
NO
I
COM(ON)
Full
40
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, V
Full
Full
Full
2.4
0
-
-
-
V+
0.8
1
V
V
INH
Input Voltage Low, V
Input Current, I , I
INL
V+ = 5.5V, V = 0V or V+
IN
-1
µA
INH INL
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
V
V
or V
= 3V, R = 300Ω, C = 35pF,
25
Full
25
-
-
-
-
-
-
-
-
-
-
150
240
100
150
10
-
ns
ns
ns
ns
pC
dB
pF
pF
ON
NO
NC
L
L
= 0 to 3V, (See Figure 1)
IN
Turn-OFF Time, t
V
V
or V
= 3V, R = 300Ω, C = 35pF,
-
OFF
NO
NC
L
L
= 0 to 3V, (See Figure 1)
IN
Full
25
-
Charge Injection, Q
C
R
= 1.0nF, V = 0V, R = 0Ω, (See Figure 2)
2
L
L
G
G
OFF Isolation
= 50Ω, C = 15pF, f = 100kHz, (See Figure 3)
25
>90
14
14
L
NO or NC OFF Capacitance, C
COM OFF Capacitance,
f = 1MHz, V
f = 1MHz, V
or V
or V
= V
= V
= 0V, (See Figure 5)
= 0V, (See Figure 5)
25
-
OFF
NO
NO
NC
COM
COM
25
-
NC
C
COM(OFF)
COM ON Capacitance, C
f = 1MHz, V
or V
= V
= 0V, (See Figure 5)
25
-
30
-
pF
COM(ON)
NO
NC
COM
3
ISL84514, ISL84515
Electrical Specifications Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, V
= 2.4V, V
= 0.8V (Note 4),
INL
INH
Unless Otherwise Specified (Continued)
TEMP (NOTE 5)
(NOTE 5)
MAX
o
PARAMETER
POWER SUPPLY CHARACTERISTICS
TEST CONDITIONS
( C)
MIN
TYP
UNITS
Positive Supply Current, I+
V+ = 5.5V, V = 0V or V+, Switch On or Off
IN
25
-1
0.0001
-
1
µA
µA
Full
-10
10
NOTES:
4. V = input voltage to perform proper function.
IN
5. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
o
6. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at 25 C.
Electrical Specifications - 12V Supply
Test Conditions: V+ = +10.8V to +13.2V, GND = 0V, V
Unless Otherwise Specified
= 5V, V
= 0.8V (Note 4),
(NOTE5)
INH
INL
TEMP (NOTE 5)
o
PARAMETER
TEST CONDITIONS
( C)
MIN
TYP
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
Full
25
0
-
-
-
-
-
-
-
-
-
-
-
-
V+
10
15
3
V
Ω
ANALOG
ON Resistance, R
V+ = 10.8V, I
= 1.0mA, V
= 10V
COM
ON
COM
Full
25
-
Ω
R
Flatness, R
V+ = 12V, I
= 1.0mA, V = 3V, 6V, 9V
COM
-
Ω
ON
FLAT(ON)
COM
Full
25
-
5
Ω
NO or NC OFF Leakage Current,
or I
V+ = 13.2V, V
(Note 6)
= 1V, 10V, V
= 10V, 1V, V
or V
or V
= 10V, 1V,
= 1V, 10V,
-2
-50
-2
-50
-4
-100
2
nA
nA
nA
nA
nA
nA
COM
COM
COM
NO
NO
NC
NC
I
NO(OFF)
NC(OFF)
Full
25
50
2
COM OFF Leakage Current,
V+ = 13.2V, V
(Note 6)
I
COM(OFF)
Full
25
50
4
COM ON Leakage Current,
V+ = 13.2V, V
10V, (Note 6)
= 1V, 10V, or V
or V
= 1V,
NC
NO
I
COM(ON)
DIGITAL INPUT CHARACTERISTICS
Full
100
Input Voltage High, V
Full
Full
Full
5
0
3
-
V+
0.8
1
V
V
INH
Input Voltage Low, V
Input Current, I , I
INL
V+ = 13.2V, V = 0V or V+
IN
-1
-
µA
INH INL
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
V
V
or V
= 10V, R = 300Ω, C = 35pF,
25
Full
25
-
-
-
-
-
-
-
-
-
-
150
240
100
150
20
-
ns
ns
ns
ns
pC
dB
pF
pF
ON
NO
NC
L
L
= 0 to 5V, (See Figure 1)
IN
Turn-OFF Time, t
V
V
or V
= 10V, R = 300Ω, C = 35pF,
-
OFF
NO
NC
L
L
= 0 to 5V, (See Figure 1)
IN
Full
25
-
Charge Injection, Q
C
R
= 1.0nF, V = 0V, R = 0Ω, (See Figure 2)
8
L
L
G
G
OFF Isolation
= 50Ω, C = 15pF, f = 100kHz, (See Figure 3)
25
>90
14
14
L
NO or NC OFF Capacitance, C
COM OFF Capacitance,
f = 1MHz, V
f = 1MHz, V
or V
or V
= V
= V
= 0V, (See Figure 5)
= 0V, (See Figure 5)
25
-
OFF
NO
NO
NC
COM
COM
25
-
NC
C
COM(OFF)
COM ON Capacitance, C
f = 1MHz, V
or V
= V
= 0V, (See Figure 5)
25
-
30
-
pF
COM(ON)
NO
NC
COM
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ V+ = 13.2V, V = 0V or V+, Switch On or Off
25
-2
-
-
2
µA
µA
IN
Full
-20
20
4
ISL84514, ISL84515
Electrical Specifications - 3.3V Supply
Test Conditions: V+ = +3.0V to +3.6V, GND = 0V, V
Unless Otherwise Specified
= 2.4V, V
= 0.8V (Note 4),
(NOTE 5)
INH
INL
TEMP (NOTE 5)
o
PARAMETER
TEST CONDITIONS
( C)
MIN
TYP
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
Full
25
0
-
-
V+
50
75
5.5
7.0
1
V
Ω
ANALOG
ON Resistance, R
V+ = 3V, I
= 1.0mA, V = 1.5V
COM
-
ON
COM
Full
25
-
-
Ω
R
Flatness, R
I = 1.0mA, V
COM COM
= 0.5V, 1V, 1.5V
-
-
Ω
ON
FLAT(ON)
Full
25
-
-
Ω
NO or NC OFF Leakage Current,
or I
V+ = 3.6V, V
(Note 6)
= 3V, 1V, V
= 3V, 1V, V
or V
or V
= 1V, 3V,
= 1V, 3V,
-1
-20
-1
-20
-2
-40
0.01
nA
nA
nA
nA
nA
nA
COM
COM
COM
NO
NC
I
NO(OFF)
NC(OFF)
Full
25
-
0.01
-
20
1
COM OFF Leakage Current,
V+ = 3.6V, V
(Note 6)
NO
NC
I
COM(OFF)
Full
25
20
2
COM ON Leakage Current,
V+ = 3.6V, V
(Note 6)
= 1V, 3V, or V
or V
= 1V, 3V,
NC
0.01
-
NO
I
COM(ON)
DIGITAL INPUT CHARACTERISTICS
Full
40
Input Voltage High, V
Full
Full
Full
2.4
0
-
-
-
V+
0.8
1
V
V
INH
Input Voltage Low, V
Input Current, I , I
INL
V+ = 3.6V, V = 0V or V+
IN
-1
µA
INH INL
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
V
V
or V
= 0 to 3V
= 1.5V, R = 300Ω, C = 35pF,
25
Full
25
-
-
-
-
-
-
-
150
240
100
150
10
ns
ns
ns
ns
pC
ON
NO
NC
L
L
IN
Turn-OFF Time, t
V
V
or V
= 0 to 3V
= 1.5V, R = 300Ω, C = 35pF,
-
OFF
NO
NC
L
L
IN
Full
25
-
Charge Injection, Q
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ V+ = 3.6V, V = 0V or V+, Switch On or Off
C
= 1.0nF, V = 0V, R = 0Ω
4
L
G
G
25
-1
-
-
1
µA
µA
IN
Full
-10
10
Test Circuits and Waveforms
V+
3V or 5V
t < 20ns
r
t < 20ns
f
C
LOGIC
INPUT
50%
0V
t
OFF
V
OUT
NO or NC
SWITCH
INPUT
SWITCH
INPUT
COM
V
OUT
IN
90%
90%
R
300Ω
C
35pF
LOGIC
INPUT
L
L
GND
SWITCH
OUTPUT
0V
t
ON
Logic input waveform is inverted for switches that have the opposite
logic sense.
C includes fixture and stray capacitance.
L
R
L
------------------------------
L
V
= V
OUT
(NO or NC)
R
+ R
(ON)
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1B. TEST CIRCUIT
FIGURE 1. SWITCHING TIMES
5
ISL84514, ISL84515
Test Circuits and Waveforms (Continued)
V+
C
SWITCH
OUTPUT
∆V
OUT
V
R
OUT
G
COM
NO OR NC
GND
V
OUT
ON
ON
LOGIC
INPUT
V
OFF
G
IN
C
L
LOGIC
INPUT
Q = ∆V
x C
L
OUT
FIGURE 2A. MEASUREMENT POINTS
FIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
V+
V+
C
C
R
= V /1mA
1
ON
SIGNAL
GENERATOR
COM
NO OR NC
V
COM
1mA
0V OR V+
0.8V OR V
INH
IN
IN
V
1
COM
ANALYZER
GND
GND
NO OR NC
R
L
FIGURE 3. OFF ISOLATION TEST CIRCUIT
FIGURE 4. R
TEST CIRCUIT
ON
V+
C
NO OR NC
0V OR V+
IN
IMPEDANCE
ANALYZER
COM
GND
FIGURE 5. CAPACITANCE TEST CIRCUIT
6
ISL84514, ISL84515
Power-Supply Considerations
Detailed Description
The ISL8451X construction is typical of most CMOS analog
switches, except that there are only two supply pins: V+ and
GND. Unlike switches with a 13V maximum supply voltage,
the ISL8451X 15V maximum supply voltage provides plenty
of room for the 10% tolerance of 12V supplies, as well as
margin for overshoot and noise spikes.
The ISL84514 and ISL84515 analog switches offer precise
switching capability from a single 2.4V to 12V supply with
low on-resistance, and high-speed operation. The devices
are especially well suited to portable battery powered
equipment thanks to the low operating supply voltage (2.4V),
low power consumption (5µW), low leakage currents (2nA
max), and the tiny SOT-23 packaging. High frequency
applications also benefit from the wide bandwidth, and the
very high Off Isolation.
The minimum recommended supply voltage is 2.4V. It is
important to note that the input signal range, switching times,
and on-resistance degrade at lower supply voltages. Refer
to the electrical specification tables and Typical Performance
Curves for details.
Supply Sequencing And Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 6). To prevent forward biasing these diodes, V+ must
be applied before any input signals, and input signal
voltages must remain between V+ and GND. If these
conditions cannot be guaranteed, then one of the following
two protection methods should be employed.
V+ and GND power the internal CMOS switches and set
their analog voltage limits. These supplies also power the
internal logic and level shifters. The level shifters convert the
input logic levels to switched V+ and GND signals to drive
the analog switch gate terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration. For a ±5V single SPST switch,
see the ISL84516, ISL84517 data sheet.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (see Figure 6). The resistor
limits the input current below the threshold that produces
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
Logic-Level Thresholds
This switch family is TTL compatible (0.8V and 2.4V) over a
supply range of 3V to 11V, and the full temperature range
(see Figure 10). At 12V the low temperature V level is
IH
about 2.5V. This is still below the TTL guaranteed high
output minimum level of 2.8V, but noise margin is reduced.
For best results with a 12V supply, use a logic family that
Adding a series resistor to the switch input defeats the
purpose of using a low R
switch, so two small signal
ON
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (see Figure 6). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch resistance may
increase, especially at low supply voltages.
provides a V
OH
greater than 3V.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50Ω systems, signal response is reasonably flat to
20MHz, with a -3dB bandwidth exceeding 200MHz (see
Figure 13). Figure 13 also illustrates that the frequency
response is very consistent over a wide V+ range, and for
varying analog signal levels.
OPTIONAL PROTECTION
DIODE
V+
OPTIONAL
PROTECTION
RESISTOR
IN
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. Off Isolation
is the resistance to this feedthrough. Figure 14 details the
high Off Isolation provided by this family. At 10MHz, off
isolation is about 50dB in 50Ω systems, decreasing
approximately 20dB per decade as frequency increases.
Higher load impedances decrease Off Isolation due to the
voltage divider action of the switch OFF impedance and the
load impedance.
V
V
NO OR NC
COM
GND
OPTIONAL PROTECTION
DIODE
FIGURE 6. OVERVOLTAGE PROTECTION
7
ISL84514, ISL84515
V+ or GND and the analog signal. This means their leakages
Leakage Considerations
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog-signal
paths and V+ or GND.
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
o
Typical Performance Curves T = 25 C, Unless Otherwise Specified
A
25
25
I
= 1mA
V+ = 3.3V
COM
V
= (V+) - 1V
= 1mA
COM
20
15
o
85 C
I
COM
o
25 C
20
15
o
-40 C
10
19
17
15
13
V+ = 5V
o
85 C
o
85 C
o
25 C
11
9
7
14
12
10
8
o
-40 C
o
o
-40 C
25 C
10
5
o
V+ = 12V
85 C
o
25 C
o
-40 C
6
4
3
4
5
6
7
8
9
10
11
12
13
0
2
4
6
8
10
12
V+ (V)
V
(V)
COM
FIGURE 8. ON RESISTANCE vs SWITCH VOLTAGE
FIGURE 7. ON RESISTANCE vs SUPPLY VOLTAGE
3.0
2.5
2.0
1.5
1.0
0.5
50
40
30
20
10
0
o
-40 C
V
INH
V+ = 5V
o
85 C
o
o
25 C
-40 C
V
INL
o
25 C
o
85 C
V+ = 3.3V
2
3
4
5
6
7
8
9
10
11
12
13
V+ (V)
0
1
2
3
4
5
V
(V)
COM
FIGURE 10. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
FIGURE 9. CHARGE INJECTION vs SWITCH VOLTAGE
8
ISL84514, ISL84515
o
Typical Performance Curves T = 25 C, Unless Otherwise Specified (Continued)
A
60
50
40
30
20
140
130
120
110
V
= (V+) - 1V
V
= (V+) - 1V
COM
COM
R
= 300Ω
L
R
= 300Ω
L
100
90
o
85 C
o
80
85 C
70
o
25 C
o
60
25 C
o
50
40
30
-40 C
o
-40 C
10
2
3
4
5
6
7
8
9
10
11
12
2
3
4
5
6
7
8
9
10
11
12
V+ (V)
V+ (V)
FIGURE 11. TURN-ON TIME vs SUPPLY VOLTAGE
FIGURE 12. TURN-OFF TIME vs SUPPLY VOLTAGE
10
V+ = 3V to 13V
= 50Ω
R
20
0
-3
-6
L
GAIN
V+ = 3.3V
30
40
50
60
70
80
90
V+ = 12V
0
PHASE
V+ = 12V
20
40
V+ = 3.3V
60
80
R
= 50Ω
= 0.2V
= 0.2V
L
V
V
to 2.5V
(V+ = 3.3V)
P-P
(V+ = 12V)
IN
IN
P-P
P-P
100
110
100
to 5V
P-P
1
10
100
FREQUENCY (MHz)
600
1k
10k
100k
1M
10M
100M 500M
FREQUENCY (Hz)
FIGURE 13. FREQUENCY RESPONSE
FIGURE 14. OFF ISOLATION
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
ISL84514: 40
ISL84515: 40
PROCESS:
Si Gate CMOS
9
ISL84514, ISL84515
Small Outline Plastic Packages (SOIC)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
N
INDEX
AREA
0.25(0.010)
M
B M
H
E
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
NOTES
A
A1
B
C
D
E
e
0.0532
0.0040
0.013
0.0688
0.0098
0.020
-
1
2
3
L
-
9
SEATING PLANE
A
0.0075
0.1890
0.1497
0.0098
0.1968
0.1574
-
-A-
o
h x 45
D
3
4
-C-
α
µ
0.050 BSC
1.27 BSC
-
e
A1
H
h
0.2284
0.0099
0.016
0.2440
0.0196
0.050
5.80
0.25
0.40
6.20
0.50
1.27
-
C
B
0.10(0.004)
5
0.25(0.010) M
C A M B S
L
6
N
α
8
8
7
NOTES:
o
o
o
o
0
8
0
8
-
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
Rev. 0 12/93
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter-
lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
10
ISL84514, ISL84515
Small Outline Transistor Plastic Packages (SOT23-5)
D
P5.064
5 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE
e1
INCHES
MILLIMETERS
L
SYMBOL
MIN
MAX
MIN
0.90
0.00
0.90
0.30
0.09
2.80
2.60
1.50
MAX
1.45
0.15
1.30
0.50
0.20
3.00
NOTES
6
1
4
A
A1
A2
b
0.036
0.000
0.036
0.012
0.0036
0.111
0.103
0.060
0.057
0.0059
0.051
0.020
0.0078
0.118
0.118
0.068
-
E
C
L
-
C
E1
-
L
2
3
b
-
C
-
e
D
3
C
L
α
E
3.00
1.75
0.95 Ref
1.90 Ref
0.55
-
0.20 (0.008) M
C
C
E1
e
3
C
L
0.0374 Ref
0.0748 Ref
0.014 0.022
-
e1
L
-
SEATING
PLANE
0.35
4, 5
A2
A1
A
N
5
5
6
-C-
o
o
o
o
0
10
0
10
-
α
Rev. 1 5/01
0.10 (0.004)
C
NOTES:
1. Dimensioning and tolerances per ANSI 14.5M-1982.
2. Package conforms to EIAJ SC-74A (1992).
3. Dimensions D and E1 are exclusive of mold flash, protrusions, or
gate burrs.
4. Footlength L measured at reference to seating plane.
5. “L” is the length of flat foot surface for soldering to substrate.
6. “N” is the number of terminal positions.
7. Controlling dimension: MILLIMETER. Converted inch dimen-
sions are for reference only.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
ISL84515IB CAD模型
引脚图
封装焊盘图
ISL84515IB 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| ISL84515IBZ | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 完全替代 |
|
| ISL84515IBZ-T | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 完全替代 |
|
ISL84515IB 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| ISL84515IB-T | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84515IBZ | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84515IBZ-T | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84515IH-T | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84515IHZ-T | INTERSIL | Low-Voltage, Single Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84516 | INTERSIL | Low-Voltage, Dual Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84516 | RENESAS | Low-Voltage, Dual Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84516IB | INTERSIL | Low-Voltage, Dual Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84516IB-T | INTERSIL | Low-Voltage, Dual Supply, SPST, Analog Switches | 获取价格 |
|
| ISL84516IH-T | INTERSIL | Low-Voltage, Dual Supply, SPST, Analog Switches | 获取价格 |
|
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