X28C512JI-15 [INTERSIL]
5V, Byte Alterable EEPROM; 5V ，字节EEPROM可变
| 型号： | X28C512JI-15 |
| 厂家： | 
Intersil |
| 描述： | 5V, Byte Alterable EEPROM |
| 文件： | 总21页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
X28C512, X28C513
®
Data Sheet
June 7, 2006
FN8106.2
5V, Byte Alterable EEPROM
Features
The X28C512, X28C513 are 64K x 8 EEPROM, fabricated
with Intersil’s proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable nonvolatile
memories, the X28C512, X28C513 are 5V only devices. The
X28C512, X28C513 feature the JEDEC approved pin out for
byte wide memories, compatible with industry standard
EPROMS.
• Access Time: 90ns
• Simple Byte and Page Write
- Single 5V supply
• No external high voltages or V control circuits
PP
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
The X28C512, X28C513 support a 128-byte page write
operation, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds. The X28C512, X28C513 also feature DATA Polling
and Toggle Bit Polling, system software support schemes
used to indicate the early completion of a write cycle. In
addition, the X28C512, X28C513 support the software data
protection option.
• Low Power CMOS
- Active: 50mA
- Standby: 500µA
• Software Data Protection
- Protects data against system level inadvertent writes
• High Speed Page Write Capability
™
• Highly Reliable Direct Write Cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
- Early end of write detection
- DATA polling
- Toggle bit polling
• Two PLCC and LCC Pinouts
- X28C512
• X28C010 EPROM pin compatible
- X28C513
• Compatible with lower density EEPROMs
• Pb-Free Plus Anneal Available (RoHS Compliant)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
X28C512, X28C513
Block Diagram
512Kbit
EEPROM
Array
X Buffers
Latches and
Decoder
A -A
7
15
I/O Buffers
and Latches
Y Buffers
Latches and
Decoder
A -A
0
6
I/O -I/O
0
7
Data Inputs/Outputs
CE
Control
Logic and
Timing
OE
WE
V
CC
SS
V
Ordering Information
ACCESS TIME
PART NUMBER
X28C512D
PART MARKING
X28C512D
(ns)
TEMP RANGE (°C)
0 to +70
PACKAGE
32 Ld CERDIP
-
X28C512DM
X28C512DM
-55 to +125
0 to +70
32 Ld CERDIP
32 Ld PLCC
X28C512J
X28C512J
X28C513EM
X28C513EM
-55 to +125
0 to +70
32 Ld LCC
X28C512D-12
X28C512D-12
X28C512DI-12
X28C512DMB-12
X28C512FMB-12
X28C512J-12
X28C512J-12 Z
X28C512JI-12
X28C512JI-12 Z
X28C512JM-12
X28C512KM-12
X28C512PI-12
X28C512RMB-12
X28C513EM-12
X28C513EMB-12
X28C513J-12
X28C513J-12 Z
X28C513JI-12
X28C513JI-12 Z
X28C513JM-12
120
32 Ld CERDIP
32 Ld CERDIP
32 Ld CERDIP
32 Ld Flat Pack
32 Ld PLCC
X28C512DI-12
-40 to +85
Mil-STD-883
Mil-STD-883
0 to +70
X28C512DMB-12
X28C512FMB-12
X28C512J-12*
X28C512JZ-12* (See Note)
X28C512JI-12
0 to +70
32 Ld PLCC (Pb-free)
32 Ld PLCC
-40 to +85
-40 to +85
-55 to +125
-55 to +125
-40 to +85
Mil-STD-883
-55 to +125
Mil-STD-883
0 to +70
X28C512JIZ-12* (See Note)
X28C512JM-12
32 Ld PLCC (Pb-free)
32 Ld PLCC
X28C512KM-12
X28C512PI-12
36 Ld CPGA
32 Ld PDIP
X28C512RMB-12
X28C513EM-12
X28C513EMB-12
X28C513J-12*
32 Ld Flat Pack
32 Ld LCC
32 Ld LCC
32 Ld PLCC
X28C513JZ-12* (Note)
X28C513JI-12*
0 to +70
32 Ld PLCC (Pb-free)
32 Ld PLCC
-40 to +85
-40 to +85
-55 to +125
X28C513JIZ-12* (Note)
X28C513JM-12
32 Ld PLCC (Pb-free)
32 Ld PLCC
FN8106.2
June 7, 2006
2
X28C512, X28C513
Ordering Information (Continued)
ACCESS TIME
PART NUMBER
PART MARKING
X28C512D-15
(ns)
TEMP RANGE (°C)
0 to +70
PACKAGE
32 Ld CERDIP
X28C512D-15
150
X28C512DI-15
X28C512DI-15
X28C512DMB-15
X28C512J-15
-40 to +85
Mil-STD-883
0 to +70
32 Ld CERDIP
32 Ld CERDIP
32 Ld PLCC
X28C512DMB-15
X28C512J-15*
X28C512JZ-15* (See Note)
X28C512JI-15*
X28C512J-15 Z
X28C512JI-15
0 to +70
32 Ld PLCC (Pb-free)
32 Ld PLCC
-40 to +85
-40 to +85
-55 to +125
-55 to +125
Mil-STD-883
0 to +70
X28C512JIZ-15* (See Note)
X28C512JM-15
X28C512JI-15 Z
X28C512JM-15
X28C513EM-15
X28C513EMB-15
X28C513J-15
32 Ld PLCC (Pb-free)
32 Ld PLCC
X28C513EM-15
32 Ld LCC
X28C513EMB-15
X28C513J-15*
32 Ld LCC
32 Ld PLCC
X28C513JZ-15* (Note)
X28C513JI-15
X28C513J-15 Z
X28C513JI-15
0 to +70
32 Ld PLCC (Pb-free)
32 Ld PLCC
-40 to +85
-40 to +85
-55 to +125
Mil-STD-883
-55 to +125
-40 to +85
-55 to +125
-40 to +85
-55 to +125
Mil-STD-883
0 to +70
X28C513JIZ-15* (Note)
X28C513JM-15
X28C513JI-15 Z
X28C513JM-15
X28C512DMB-20
X28C512JM-20
X28C512KI-20
X28C512KM-20
X28C513EI-20
X28C513EM-20
X28C513EMB-20
X28C513J-20
32 Ld PLCC (Pb-free)
32 Ld PLCC
X28C512DMB-20
X28C512JM-20
200
32 Ld CERDIP
32 Ld PLCC
X28C512KI-20
36 Ld CPGA
X28C512KM-20
36 Ld CPGA
X28C513EI-20
32 Ld LCC
X28C513EM-20
32 Ld LCC
X28C513EMB-20
X28C513J-20T1
X28C512EM-25
32 Ld LCC
32 Ld PLCC Tape and Reel
32 Ld LCC
X28C512EM-25
X28C512JM-25
X28C512KM-25
X28C512KMB-25
X28C513EM-25
X28C513EMB-25
250
-55 to +125
-55 to +125
-55 to +125
Mil-STD-883
-55 to +125
Mil-STD-883
X28C512JM-25
32 Ld PLCC
X28C512KM-25
36 Ld CPGA
X28C512KMB-25
X28C513EM-25
36 Ld CPGA
32 Ld LCC
X28C513EMB-25
32 Ld LCC
*Add "T1" suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish,
which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
FN8106.2
June 7, 2006
3
X28C512, X28C513
Pinouts
PLCC/LCC
Plastic DIP
CERDIP
FLAT Pack
SOIC (R)
30
29
4
3
2
32 31
A
A
A
5
A
14
7
6
5
1
A
28
6
7
13
PGA
A
27
26
8
A
A
A
8
9
4
3
9
I/O
15
I/O
17
I/O
I/O
21
I/O
22
0
2
1
3
5
4
6
7
X28C512
(Top View)
NC
NC
V
1
32
A
25
24
23
22
CC
11
19
A
A
10
11
OE
2
1
2
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
WE
NC
CE
24
A
13
A
I/O
16
V
SS
18
I/O
20
I/O
23
1
0
A
10
14
A
3
A
12
13
CE
I/O
15
0
OE
26
A
A
A
10
25
I/O
2
3
0
7
15 16 17 18 19 20
4
A
A
14
12
21
12
11
14
A
5
A
7
13
A
A
A
A
9
28
4
5
11
Bottom
View
10
9
7
27
A
8
A
6
6
A
A
A
A
13
30
6
7
8
A
5
7
A
9
29
8
A
4
8
A
11
A
NC
V
NC
34
NC
32
X28C512
A
A
14
31
15
CC
12
A
3
OE
6
5
4
2
36
9
30
29
A
2
A
NC
NC
NC
1
NC
33
10
11
12
13
14
15
16
WE
35
10
4
3
2
32 31
A
5
A
8
A
9
6
5
4
3
1
A
1
CE
I/O
A
A
28
6
7
A
27
26
11
A
0
5
A
A
NC
OE
8
9
3
2
X28C513
(Top View)
I/O
I/O
I/O
I/O
I/O
0
25
24
23
22
4
3
2
1
A
A
A
10
11
10
1
0
I/O
1
CE
I/O
I/O
2
NC
I/O
12
13
7
I/O
0
6
15 16 17 18 19 20
V
SS
21
14
Pin Descriptions
Pin Names
Addresses (A0-A15
)
SYMBOL
DESCRIPTION
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
+5V
The Address inputs select an 8-bit memory location during a
read or write operation.
A -A
0
15
I/O -I/O
0
7
Chip Enable (CE)
WE
CE
OE
The Chip Enable input must be LOW to enable all read/write
operations. When CE is HIGH, power consumption is
reduced.
Output Enable (OE)
V
CC
The Output Enable input controls the data output buffers and
is used to initiate read operations.
V
Ground
SS
NC
No Connect
Data In/Data Out (I/O -I/O )
0
7
Data is written to or read from the X28C512, X28C513
through the I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28C512, X28C513.
FN8106.2
June 7, 2006
4
X28C512, X28C513
DATA Polling (I/O )
Device Operation
7
The X28C512, X28C513 feature DATA polling as a method
to indicate to the host system that the byte write or page
write cycle has completed. DATA Polling allows a simple bit
test operation to determine the status of the X28C512,
X28C513, eliminating additional interrupt inputs or external
hardware. During the internal programming cycle, any
attempt to read the last byte written will produce the
Read
Read operations are initiated by both OE and CE LOW. The
read operation is terminated by either CE or OE returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in
a high impedance state when either OE or CE is HIGH.
complement of that data on I/O (i.e. write data = 0xxx xxxx,
read data = 1xxx xxxx). Once the programming cycle is
7
Write
Write operations are initiated when both CE and WE are
LOW and OE is HIGH. The X28C512, X28C513 support
both a CE and WE controlled write cycle. That is, the
address is latched by the falling edge of either CE or WE,
whichever occurs last. Similarly, the data is latched internally
by the rising edge of either CE or WE, whichever occurs first.
A byte write operation, once initiated, will automatically
continue to completion, typically within 5ms.
complete, I/O will reflect true data.
7
Toggle Bit (I/O )
6
The X28C512, X28C513 also provide another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O will toggle from HIGH to
6
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete, the toggling will
cease, and the device will be accessible for additional read
or write operations.
Page Write Operation
The page write feature of the X28C512, X28C513 allows the
entire memory to be written in 2.5 seconds. Page write
allows two to one hundred twenty-eight bytes of data to be
consecutively written to the X28C512, X28C513, prior to the
commencement of the internal programming cycle. The host
can fetch data from another device within the system during
a page write operation (change the source address), but the
page address (A through A ) for each subsequent valid
7
15
write cycle to the part during this operation must be the same
as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to one hundred twenty-seven bytes in
the same manner as the first byte was written. Each
successive byte load cycle, started by the WE HIGH to LOW
transition, must begin within 100µs of the falling edge of the
preceding WE. If a subsequent WE HIGH to LOW transition
is not detected within 100µs, the internal automatic
programming cycle will commence. There is no page write
window limitation. Effectively, the page write window is
infinitely wide, so long as the host continues to access the
device within the byte load cycle time of 100µs.
Write Operation Status Bits
The X28C512, X28C513 provide the user two write
operation status bits. These can be used to optimize a
system write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
I/O
DP
TB
5
4
3
2
1
0
Reserved
Toggle Bit
DATA Polling
FIGURE 1. STATUS BIT ASSIGNMENT
FN8106.2
June 7, 2006
5
X28C512, X28C513
DATA Polling I/O
7
Last
Write
WE
CE
OE
V
IH
V
OH
HIGH Z
I/O
7
V
OL
X28C512, X28C513
Ready
A -A
A
A
A
A
A
A
A
n
0
15
n
n
n
n
n
n
FIGURE 2A. DATA POLLING BUS SEQUENCE
DATA Polling can effectively halve the time for writing to the
X28C512, X28C513. The timing diagram in Figure 2A
illustrates the sequence of events on the bus. The software
flow diagram in Figure 2B illustrates one method of
implementing the routine.
Write Data
No
Writes
Complete?
Yes
Save Last Data
and Address
Read Last
Address
IO
7
No
Compare?
Yes
Ready
FIGURE 2B. DATA POLLING SOFTWARE FLOW
FN8106.2
June 7, 2006
6
X28C512, X28C513
The Toggle Bit I/O
6
Last
Write
WE
CE
OE
V
OH
HIGH Z
I/O
6
*
*
V
OL
X28C512, X28C513
Ready
* Beginning and ending state of I/O will vary.
6
FIGURE 3A. TOGGLE BIT BUS SEQUENCE
Hardware Data Protection
The X28C512, X28C513 provide three hardware features
that protect nonvolatile data from inadvertent writes.
Last Write
- Noise Protection—A WE pulse typically less than 10ns
will not initiate a write cycle.
- Default V
Sense—All write functions are inhibited
CC
is 3.6V.
Load Accum
From Addr N
when V
CC
- Write Inhibit—Holding either OE LOW, WE HIGH, or CE
HIGH will prevent an inadvertent write cycle during
power-up and power-down, maintaining data integrity.
Write cycle timing specifications must be observed
concurrently.
Compare
Accum with
Addr N
Software Data Protection
The X28C512, X28C513 offer a software controlled data
protection feature. The X28C512, X28C513 are shipped
from Intersil with the software data protection NOT
ENABLED; that is, the device will be in the standard
operating mode. In this mode data should be protected
during power-up/-down operations through the use of
external circuits. The host would then have open read and
No
Compare
Ok?
Yes
X28C512
Ready
write access of the device once V
was stable.
CC
The X28C512, X28C513 can be automatically protected
during power-up and power-down without the need for
external circuits by employing the software data protection
feature. The internal software data protection circuit is
enabled after the first write operation utilizing the software
algorithm. This circuit is nonvolatile and will remain set for
the life of the device unless the reset command is issued.
FIGURE 3B. TOGGLE BIT SOFTWARE FLOW
The Toggle Bit can eliminate the chore of saving and
fetching the last address and data in order to implement
DATA Polling. This can be especially helpful in an array
comprised of multiple X28C512, X28C513 memories that
are frequently updated. Toggle Bit Polling can also provide a
method for status checking in multiprocessor applications.
The timing diagram in Figure 3A illustrates the sequence of
events on the bus. The software flow diagram in Figure 3B
illustrates a method for polling the Toggle Bit.
Once the software protection is enabled, the X28C512,
X28C513 are also protected from inadvertent and accidental
writes in the powered-up state. That is, the software
algorithm must be issued prior to writing additional data to
the device. Note: The data in the three-byte enable
sequence is not written to the memory array.
FN8106.2
June 7, 2006
7
X28C512, X28C513
Software Data Protection
V
CC
0V
(V
)
CC
Data
Addr
AAA
5555
55
2AAA
A0
5555
Writes
ok
t
Write
Protected
WC
CE
≤ t
Byte
or
Page
BLC MAX
WE
Note: All other timings and control pins are per page write timing requirements
FIGURE 4A. TIMING SEQUENCE—SOFTWARE DATA PROTECT ENABLE SEQUENCE FOLLOWED BY BYTE OR PAGE WRITE
Software Algorithm
Selecting the software data protection mode requires the
host system to precede data write operations by a series of
three write operations to three specific addresses. Refer to
Figures 4A and 4B for the sequence. The three byte
Write Data AA
to Address
5555
sequence opens the page write window, enabling the host to
write from one to one hundred twenty-eight bytes of data.
Once the page load cycle has been completed, the device
will automatically be returned to the data protected state.
Write Data 55
to Address
2AAA
Regardless of whether the device has previously been
protected or not, once the software data protected algorithm
is used and data has been written, the X28C512, X28C513
will automatically disable further writes, unless another
command is issued to cancel it. If no further commands are
issued the X28C512, X28C513 will be write-protected during
power-down and after any subsequent power-up. The state
Write Data 80
to Address
5555
of A while executing the algorithm is “don’t care”.
15
Write Data XX
to any
Address
Note: Once initiated, the sequence of write operations
should not be interrupted.
Optional
Byte/Page
Load Operation
Write Last
Byte to
Last Address
After t
WC
Re-Enters Data
Protected State
FIGURE 4B. WRITE SEQUENCE FOR SOFTWARE DATA
PROTECTION
FN8106.2
June 7, 2006
8
X28C512, X28C513
Resetting Software Data Protection
V
CC
Data
Addr
AAA
5555
55
2AAA
80
5555
AA
5555
55
2AAA
20
5555
Standard
Operating
Mode
≥ t
WC
CE
WE
Note: All other timings and control pins are per page write timing requirements
FIGURE 5A. Reset Software Data Protection Timing Sequence
System Considerations
Write Data AA
to Address
5555
Because the X28C512, X28C513 are frequently used in
large memory arrays, it is provided with a two-line control
architecture for both read and write operations. Proper
usage can provide the lowest possible power dissipation and
eliminate the possibility of contention where multiple I/O pins
share the same bus.
Write Data 55
to Address
2AAA
To gain the most benefit, it is recommended that CE be
decoded from the address bus and be used as the primary
device selection input. Both OE and WE would then be
common among all devices in the array. For a read operation
this assures that all deselected devices are in their standby
mode and that only the selected device(s) is/are outputting
data on the bus.
Write Data A0
to Address
5555
Write Data AA
to Address
5555
Because the X28C512, X28C513 have two power modes,
(standby and active), proper decoupling of the memory array
is of prime concern. Enabling CE will cause transient current
spikes. The magnitude of these spikes is dependent on the
output capacitive loading of the I/Os. Therefore, the larger
the array sharing a common bus, the larger the transient
spikes. The voltage peaks associated with the current
transients can be suppressed by the proper selection and
placement of decoupling capacitors. As a minimum, it is
recommended that a 0.1µF high frequency ceramic
Write Data 55
to Address
2AAA
Write Data 20
to Address
5555
capacitor be used between V
and V at each device.
CC
SS
Depending on the size of the array, the value of the capacitor
may have to be larger.
FIGURE 5B. SOFTWARE SEQUENCE TO DEACTIVATE
SOFTWARE DATA PROTECTION
In addition, it is recommended that a 4.7µF electrolytic bulk
In the event the user wants to deactivate the software data
protection feature for testing or reprogramming in an
EEPROM programmer, the following six step algorithm will
capacitor be placed between V
and V for each 8
CC
SS
devices employed in the array. This bulk capacitor is
employed to overcome the voltage droop caused by the
inductive effects of the PC board traces.
reset the internal protection circuit. After t , the X28C512,
WC
X28C513 will be in standard operating mode.
Note: Once initiated, the sequence of write operations
should not be interrupted.
FN8106.2
June 7, 2006
9
X28C512, X28C513
Active Supply Current vs Ambient Temperature
I
(RD) by Temperature Over Frequency
CC
70
14
5.0 V
V
= 5V
CC
CC
13
12
11
10
9
60
50
40
30
20
10
-55°C
+25°C
+125°C
8
-55
-10
+35
+80
+125
Ambient Temperature (°C)
3
6
9
12
15
0
Frequency (MHz)
Standby Supply Current vs Ambient Temperature
0.24
V
= 5V
CC
0.22
0.2
0.18
0.16
0.14
0.12
0.1
-10
+35
+80
+125
-55
Ambient Temperature (°C)
FN8106.2
June 7, 2006
10
X28C512, X28C513
Absolute Maximum Ratings
Recommended Operating Conditions
Temperature under bias
Temperature Range
X28C512, X28C513 . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28C512I/513I . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28C512M/513M . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V ±10%
Voltage on any pin with respect to V . . . . . . . . . . . . . . -1V to +7V
SS
D.C. output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Lead temperature (soldering, 10s). . . . . . . . . . . . . . . . . . . . . .300°C
CAUTION: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional
operation of the device (at these or any other conditions above those listed in the operational sections of this specification) is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DC Electrical Specifications Over recommended operating conditions, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
I
V
current (active) (TTL inputs)
CE = OE = V , WE = V , All I/O’s = open, address
50
mA
CC
CC
IL IH
inputs = 0.4V/2.4V Levels @ f = 5MHz
I
I
V
V
current (standby) (TTL inputs)
current (standby) (CMOS inputs)
CE = V , OE = VIL, All I/O’s = open, other inputs = V
3
mA
µA
SB1
SB2
CC
CC
IH
IH
CE = V
- 0.3V, OE = VIL, All I/O’s = Open, Other Inputs
500
CC
= V
IH
= V to V
CC
I
Input leakage current
Output leakage current
Input LOW voltage
V
V
10
10
µA
µA
V
LI
IN
SS
I
= V to V , CE = V
SS CC IH
LO
OUT
V
-1
2
0.8
lL
(Note 1)
V
Input HIGH voltage
V
+ 1
CC
V
IH
(Note 1)
V
Output LOW voltage
Output HIGH voltage
I
I
= 2.1mA
= -400µA
0.4
V
V
OL
OL
V
2.4
OH
OH
NOTE:
1. V min. and V max. are for reference only and are not tested.
IL IH
Power-Up Timing
SYMBOL
PARAMETER
Power-up to read operation
Power-up to write operation
MAX
100
5
UNIT
µs
t
(Note 2)
(Note 2)
PUR
t
ms
PUW
Capacitance
T
= +25°C, f = 1MHz, V
= 5V
A
CC
SYMBOL
PARAMETER
TEST CONDITIONS
MAX
10
UNIT
C
(Note 2)
(Note 2)
Input/output capacitance
Input capacitance
V
= 0V
= 0V
pF
pF
I/O
I/O
C
V
10
IN
IN
Endurance and Data Retention
PARAMETER
MIN
10,000
100,000
100
MAX
UNIT
Endurance
Cycles per byte
Cycles per page
Years
Endurance
Data retention
NOTE:
2. This parameter is periodically sampled and not 100% tested.
FN8106.2
June 7, 2006
11
X28C512, X28C513
Equivalent A.C. Load Circuit
A.C. Conditions of Test
Input pulse levels
0V to 3V
10ns
5V
Input rise and fall times
Input and output timing levels
1.5V
1.92kΩ
Mode Selection
Output
CE
L
OE
L
WE
H
MODE
I/O
POWER
1.37KΩ
100pF
Read
D
Active
OUT
Write
D
Active
L
H
L
IN
Standbyandwrite
inhibit
High Z
Standby
H
X
X
Symbol Table
Write inhibit
Write inhibit
—
—
—
—
X
X
L
X
H
WAVEFORM
INPUTS
OUTPUTS
X
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
Changing:
State Not
Known
N/A
Center Line
is High
Impedance
FN8106.2
June 7, 2006
12
X28C512, X28C513
AC Electrical Specifications Over the recommended operating conditions, unless otherwise specified.
X28C512-90
X28C513-90
X28C512-12
X28C513-12
X28C512-15
X28C513-15
X28C512-20
X28C513-20
X28C512-25
X28C513-25
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNIT
READ CYCLE LIMITS
t
Read cycle time
90
120
150
200
250
ns
ns
ns
ns
ns
RC
t
Chip enable access time
Address access time
90
90
40
120
120
50
150
150
50
200
200
50
250
250
50
CE
t
AA
OE
t
Output enable access time
CE LOW to active output
t
0
0
0
0
0
0
0
0
0
0
LZ
(Note 3)
t
OE LOW to active output
ns
ns
ns
ns
OLZ
(Note 3)
t
CE HIGH to high Z output
OE HIGH to high Z output
Output hold from address change
40
40
50
50
50
50
50
50
50
50
HZ
(Note 3)
t
OHZ
(Note 3)
t
0
0
0
0
0
OH
Read Cycle
t
RC
Address
CE
t
CE
t
OE
OE
V
IH
WE
t
t
OHZ
OLZ
t
t
t
HZ
LZ
OH
AA
HIGH Z
Data I/O
Data Valid
Data Valid
t
NOTE:
3. t min., t , t
LZ HZ OLZ
min., and t
OHZ
are periodically sampled and not 100% tested. t max. and t max. are measured, with C = 5pF from the
HZ OHZ L
point when CE or OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
FN8106.2
June 7, 2006
13
X28C512, X28C513
Write Cycle Limits
SYMBOL
PARAMETER
MIN
MAX
UNIT
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
µs
µs
t
(Note 4) Write cycle time
10
WC
t
Address setup time
Address hold time
Write setup time
Write hold time
0
50
0
AS
AH
CS
CH
t
t
t
0
t
CE pulse width
100
10
10
100
100
CW
t
OE HIGH setup time
OE HIGH hold time
WE pulse width
WE High recovery
Data valid
OES
OEH
t
t
WP
t
WPH
t
1
DV
DS
DH
t
Data setup
50
0
t
Data hold
t
Delay to next write
Byte load cycle
10
0.2
DW
t
100
BLC
WE Controlled Write Cycle
t
WC
Address
t
t
AH
AS
t
t
CS
CH
CE
OE
t
t
OEH
OES
t
WP
WE
t
DV
Data In
Data Valid
t
t
DH
DS
HIGH Z
Data Out
NOTE:
4. t
is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device
WC
requires to complete the internal write operation.
FN8106.2
June 7, 2006
14
X28C512, X28C513
CE Controlled Write Cycle
t
WC
Address
CE
t
t
AH
AS
t
CW
t
WPH
t
OES
OE
t
OEH
t
t
t
CS
CH
WE
t
DV
Data Valid
Data In
t
DS
DH
HIGH Z
Data Out
Page Write Cycle
OE
(Note 5)
CE
t
t
BLC
WP
WE
t
WPH
Address*
(Note 6)
Last Byte
Byte n+2
I/O
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
t
WC
*For each successive write within the page write operation, A -A should be the same or
15
7
writes to an unknown address could occur.
NOTES:
5. Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation.
6. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the
CE or WE controlled write cycle timing.
FN8106.2
June 7, 2006
15
X28C512, X28C513
DATA Polling Timing Diagram (Note 7)
Address
CE
A
A
A
n
n
n
WE
t
t
OEH
OES
OE
t
DW
D
= X
D
= X
D
OUT
= X
I/O
7
IN
OUT
t
WC
Toggle Bit Timing Diagram
CE
WE
t
OES
t
OEH
OE
t
DW
HIGH Z
I/O
*
6
*
t
WC
*Starting and ending state will vary, depending upon actual t
WC
.
NOTE:
7. Polling operations are by definition read cycles and are therefore subject to read cycle timings.
FN8106.2
June 7, 2006
16
X28C512, X28C513
Packaging Information
32-Lead Hermetic Dual In-Line Package Type D
1.690 (42.95)
Max.
0.610 (15.49)
0.500 (12.70)
Pin 1
0.005 (0.13) Min.
0.100 (2.54) Max.
Seating
Plane
0.232 (5.90) Max.
0.060 (1.52)
0.015 (0.38)
0.150 (3.81) Min.
0.200 (5.08)
0.125 (3.18)
0.065 (1.65)
0.023 (0.58)
0.014 (0.36)
Typ. 0.018 (0.46)
0.033 (0.84)
Typ. 0.055 (1.40)
0.110 (2.79)
0.090 (2.29)
Typ. 0.100 (2.54)
0.620 (15.75)
0.590 (14.99)
Typ. 0.614 (15.60)
0°
15°
0.015 (0.38)
0.008 (0.20)
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
FN8106.2
June 7, 2006
17
X28C512, X28C513
Packaging Information
32-Pad Ceramic Leadless Chip Carrier Package Type E
0.300 (7.62)
BSC
0.150 (3.81) BSC
0.015 (0.38)
0.003 (0.08)
0.020 (0.51) x 45° Ref.
0.095 (2.41)
Pin 1
0.075 (1.91)
0.022 (0.56)
DIA.
0.006 (0.15)
0.055 (1.39)
0.045 (1.14)
0.200 (5.08)
BSC
0.015 (0.38)
Min.
TYP. (4) PLCS.
0.028 (0.71)
0.022 (0.56)
(32) Plcs.
0.040 (1.02) x 45° Ref.
Typ. (3) Plcs.
0.050 (1.27) BSC
0.088 (2.24)
0.050 (1.27)
0.458 (11.63)
0.442 (11.22)
0.458 (11.63)
--
0.120 (3.05)
0.060 (1.52)
0.558 (14.17)
--
0.560 (14.22)
0.540 (13.71)
0.400 (10.16)
BSC
Pin 1 Index Corner
NOTE:
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. TOLERANCE: ±1% NLT ±0.005 (0.127)
FN8106.2
June 7, 2006
18
X28C512, X28C513
Packaging Information
32-Lead Ceramic Flat Pack Type F
1.228 (31.19)
1.000 (25.40)
Pin 1 Index
0.019 (0.48)
0.015 (0.38)
1
32
0.050 (1.27) BSC
0.830 (21.08) Max.
0.045 (1.14) Max.
0.005 (0.13) Min.
0.440 (11.18)
0.430 (10.93)
0.120 (3.05)
0.090 (2.29)
0.007 (0.18)
0.004 (0.10)
0.370 (9.40)
0.270 (6.86)
0.026 (0.66)
Min.
0.347 (8.82)
0.330 (8.38)
0.030 (0.76)
Min.
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
FN8106.2
June 7, 2006
19
X28C512, X28C513
Plastic Leaded Chip Carrier Packages (PLCC)
0.042 (1.07)
0.056 (1.42)
N32.45x55 (JEDEC MS-016AE ISSUE A)
PIN (1)
IDENTIFIER
0.004 (0.10)
C
32 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE
0.042 (1.07)
0.048 (1.22)
0.050 (1.27) TP
ND
0.025 (0.64)
0.045 (1.14)
INCHES
MILLIMETERS
R
C
L
SYMBOL
MIN
MAX
MIN
3.18
MAX
3.55
NOTES
A
A1
D
0.125
0.060
0.485
0.447
0.188
0.585
0.547
0.238
0.140
0.095
0.495
0.453
0.223
0.595
0.553
0.273
-
1.53
2.41
-
D2/E2
D2/E2
12.32
11.36
4.78
12.57
11.50
5.66
-
D1
D2
E
3
C
L
E1
E
4, 5
14.86
13.90
6.05
15.11
14.04
6.93
-
NE
E1
E2
N
3
VIEW “A”
4, 5
28
7
28
7
6
0.015 (0.38)
MIN
ND
NE
7
7
A1
A
D1
D
9
9
SEATING
PLANE
Rev. 0 7/98
0.020 (0.51) MAX
3 PLCS
-C-
NOTES:
0.026 (0.66)
0.032 (0.81)
1. Controlling dimension: INCH. Converted millimeter dimen-
sions are not necessarily exact.
0.050 (1.27)
MIN
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
3. Dimensions D1 and E1 do not include mold protrusions. Al-
lowable mold protrusion is 0.010 inch (0.25mm) per side.
Dimensions D1 and E1 include mold mismatch and are mea-
sured at the extreme material condition at the body parting
line.
0.013 (0.33)
0.021 (0.53)
0.025 (0.64)
MIN
(0.12)
0.005
M
A S - B S D S
-C-
4. To be measured at seating plane
contact point.
5. Centerline to be determined where center leads exit plastic
body.
VIEW “A” TYP.
6. “N” is the number of terminal positions.
7. ND denotes the number of leads on the two shorts sides of the
package, one of which contains pin #1. NE denotes the num-
ber of leads on the two long sides of the package.
FN8106.2
June 7, 2006
20
X28C512, X28C513
G36.760x760A
36 LEAD CERAMIC PIN GRID ARRAY PACKAGE
Ceramic Pin Grid Array Package (CPGA)
15
14
11
9
17
16
19
18
21
20
22
23
25
27
29
32
33
A
0.008 (0.20)
13
12
10
8
24
26
0.050 (1.27)
A
28
30
31
NOTE:Leads 5, 14,23, & 32
7
Typ. 0.100 (2.54)
All Leads
6
5
2
3
36
1
34
35
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
4
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
0.120 (3.05)
0.100 (2.54)
0.072 (1.83)
0.062 (1.57)
Pin 1 Index
0.770 (19.56)
0.750 (19.05)
SQ
0.020 (0.51)
0.016 (0.41)
A
A
0.185 (4.70)
0.175 (4.45)
NOTE: All dimensions in inches (in parentheses in millimeters).
Rev. 0 12/05
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN8106.2
June 7, 2006
21
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