ZL2008ALBFT [INTERSIL]

Digital DC/DC Controller with Drivers and Pin-Strap Current Sharing; 数字DC / DC控制器与驱动器和引脚带电流共享
ZL2008ALBFT
型号: ZL2008ALBFT
厂家: Intersil    Intersil
描述:

Digital DC/DC Controller with Drivers and Pin-Strap Current Sharing
数字DC / DC控制器与驱动器和引脚带电流共享

驱动器 控制器
文件: 总42页 (文件大小:1064K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NOT RECOMMENDED FOR NEW DESIGNS  
RECOMMENDED REPLACEMENT PART  
ZL6105  
Digital DC/DC Controller with Drivers and Pin-Strap  
Current Sharing  
ZL2008  
Features  
The ZL2008 is a digital power controller with integrated  
MOSFET drivers. Current sharing allows multiple devices to be  
connected in parallel to source loads with very high current  
demands. Adaptive performance optimization algorithms  
improve power conversion efficiency. Zilker Labs Digital-DC™  
technology enables a blend of power conversion performance  
and power management features.  
Power Conversion  
• Efficient synchronous buck controller  
• Adaptive light load efficiency optimization  
• 3V to 14V input range  
• 0.54V to 5.5V output range (with margin)  
• POLA and DOSA voltage trim modes  
• ±1% output voltage accuracy  
The ZL2008 is designed to be a flexible building block for DC  
power and can be easily adapted to designs ranging from a  
single-phase power supply operating from a 3.3V input to a  
multi-phase supply operating from a 12V input. The ZL2008  
eliminates the need for complicated power supply managers  
as well as numerous external discrete components.  
• Internal 3A MOSFET drivers  
• Fast load transient response  
• Current sharing and phase interleaving  
Snapshot™ parameter capture  
• RoHS compliant (6mmx6mm) QFN package  
Key operating features can be configured by pin-straps,  
including compensation, current sharing and output voltage.  
The ZL2008 uses the I2C/SMBus™ with PMBus™ protocol for  
communication with a host controller and the Digital-DC bus  
for communication between Zilker Labs devices.  
Power Management  
• Digital soft-start/stop  
• Precision delay and ramp-up  
Applications  
• Servers/storage equipment  
• Telecom/datacom equipment  
• Power supply modules  
• Power good/enable  
• Voltage tracking, sequencing and margining  
• Voltage, current and temperature monitoring  
• I2C/SMBus interface, PMBus compatible  
• Output voltage and current protection  
• Internal non-volatile memory (NVM)  
Block Diagram  
Efficiency vs Load Current  
100  
EN PG  
CFG UVLO V25 VR VDD  
DLY FC ILIM  
VOUT = 3.3V  
VOUT = 1.5V  
95  
90  
85  
80  
75  
70  
65  
60  
55  
V
SS  
LDO  
VTRK  
POWER  
MANAGEMENT  
MGN  
BST  
GH  
SYNC  
DDC  
DRIVER  
SW  
GL  
NON-  
VOLATILE  
VSEN+  
VSEN-  
PWM  
CONTROLLER  
MEMORY  
CURRENT  
SENSE  
ISENA  
ISENB  
VIN = 12V  
fSW = 400kHz  
SCL  
SDA  
SALRT  
TEMP  
SENSOR  
MONITOR  
ADC  
I2 C  
SA  
Circuit of Figure 4  
50  
0
4
10  
14 16 18 20  
2
6
8
12  
Load Current (A)  
FIGURE 2. EFFICIENCY vs LOAD CURRENT  
XTEMP  
PGND SGND DGND  
FIGURE 1. BLOCK DIAGRAM  
April 29, 2011  
FN6859.4  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2009-2011. All Rights Reserved  
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.  
All other trademarks mentioned are the property of their respective owners.  
1
ZL2008  
Table of Contents  
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Pin Descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Typical Application Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
ZL2008 Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Digital-DC Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Power Conversion Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Power Management Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Multi-mode Pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Power Conversion Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Internal Bias Regulators and Input Supply Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
High-side Driver Boost Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Output Voltage Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Start-up Procedure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Soft-start Delay and Ramp Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Power Good . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Switching Frequency and PLL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Power Train Component Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Current Limit Threshold Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Loop Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Non-linear Response (NLR) Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Efficiency Optimized Driver Dead-time Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Adaptive Diode Emulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Adaptive Frequency Control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Power Management Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Input Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Output Overvoltage Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Output Pre-Bias Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Output Overcurrent Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Thermal Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Voltage Tracking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Voltage Margining . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
I2C/SMBus Communications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
I2C/SMBus Device Address Selection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29  
Digital-DC Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Phase Spreading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Output Sequencing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Fault Spreading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Temperature Monitoring Using the XTEMP Pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31  
Active Current Sharing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Phase Adding/Dropping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34  
Monitoring via I2C/SMBus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Snapshot Parameter Capture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Non-Volatile Memory and Device Security Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Pin-strap Current Sharing Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
SMBus Address (SA0, SA1 Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
Current Share Pin-Straps (CFG0, CFG2 Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
FN6859.4  
April 29, 2011  
2
ZL2008  
SYNC Clock (CFG1 Pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
Soft-start (SS Pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
Phase Enable (PH_EN Pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
MFR_CONFIG Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
VOUT_DROOP Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37  
Current Sharing Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38  
Related Tools and Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39  
About Intersil . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41  
Package Outline Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42  
FN6859.4  
April 29, 2011  
3
ZL2008  
Absolute Maximum Ratings  
Thermal Information  
DC Supply Voltage for VDD Pin . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 17V  
MOSFET Drive Reference for VR Pin. . . . . . . . . . . . . . . . . . . . . -0.3V to 6.5V  
2.5V Logic Reference for V25 Pin . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 3V  
Logic I/O Voltage for CFG(0, 1 ,2), DDC, EN, FC(0,1),  
ILIM, MGN, PG, PH_EN, SA(0, 1), SALRT, SCL,  
SDA, SS, SYNC, UVLO, V(0, 1) Pins . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6V  
Analog Input Voltages for ISENB, VSEN, VTRK,  
Thermal Resistance (Typical)  
36 Ld QFN (Notes 2, 3) . . . . . . . . . . . . . . . .  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C  
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
θ
JA (°C/W)  
θ
JC (°C/W)  
5
35  
XTEMP Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.5V  
Analog Input Voltages for ISENA PIn . . . . . . . . . . . . . . . . . . . . -1.5V to 6.5V  
High Side Supply Voltage for BST Pin . . . . . . . . . . . . . . . . . . . . -0.3V to 30V  
Boost to Switch Voltage for BST -SW Pins . . . . . . . . . . . . . . . . . . -0.3V to 8V  
High Side Drive Voltage for GH Pin. . . . . . . . . . . .(VSW-0.3V) to (VBST+0.3V)  
Low Side Drive Voltage for GL Pin . . . . . . . . . . . (PGND-0.3V) to (VR+0.3V)  
Switch Node Continuous for SW Pin . . . . . . . . . . . . . . .(PGND-0.3V) to 30V  
Switch Node Transient (<100ns) for SW Pin. . . . . . . . . . (PGND-5V) to 30V  
Ground Differential for DGND – SGND, PGND - SGND Pins . . . . . . . . . . . . .  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 0.3V  
ESD Rating  
Recommended Operating Conditions  
Input Supply Voltage Range, VDD (See Figure 9)  
VDD tied to VR. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 5.5V  
VR floating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V to 14V  
Output Voltage Range, VOUT (Note 4) . . . . . . . . . . . . . . . . . . . . 0.54V to 5.5V  
Operating Junction Temperature Range, TJ. . . . . . . . . . . . . . . . . . . -40°C to +125°C  
Input Voltage  
V
V
IN, Rise Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5ms minimum  
IN Ramp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Monotonic  
Human Body Model (Note 1, Tested per JESD22-A114E). . . . . . . . . . . . . . . . .2kV  
Machine Model (Tested per JESD22-A115-A). . . . . . . . . . . . . . . . . 500V  
Latch Up (Tested per JESD78). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product  
reliability and result in failures not covered by warranty.  
NOTES:  
1. BST, SW pins rated at 1.5kV.  
2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech  
Brief TB379.  
3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.  
4. Includes margin limits.  
Electrical Specifications VDD = 12V, TA = -40°C to +85°C unless otherwise noted. Typical values are at TA = +25°C. Boldface limits apply  
over the operating temperature range, -40°C to +85°C.  
MIN  
MAX  
PARAMETER  
Input and Supply Characteristics  
IDD Supply Current at fSW = 200kHz  
IDD Supply Current at fSW = 1.4MHz  
IDDS Shutdown Current  
CONDITIONS  
(Note 14)  
TYP  
(Note 14)  
UNIT  
GH, GL no load  
MISC_CONFIG[7] = 1  
EN = 0V  
16  
25  
30  
50  
9
mA  
mA  
mA  
6.5  
No I2C/SMBus activity  
VDD > 6V, IVR < 20mA  
VR > 3V, IV25 < 20mA  
Vr Reference Output Voltage  
4.5  
5.2  
2.5  
5.5  
V
V
V25 Reference Output Voltage  
Output Characteristics  
2.25  
2.75  
Output Voltage Adjustment Range (Note 5)  
Output Voltage Set-point Resolution  
V
IN > VOUT  
0.6  
5.0  
V
Set using resistors  
10  
mV  
Set using I2C/SMBus  
±0.025  
% FS  
(Note 6)  
Output Voltage Accuracy (Note 7)  
Vsen Input Bias Current  
Includes line, load, temp  
VSEN = 5.5V  
-1  
110  
1
%
200  
100  
µA  
mV  
Current Sense Differential Input  
Voltage (Ground Referenced)  
VISENA -VISENB  
-100  
Current Sense Differential Input Voltage (Vout  
Referenced, Vout < 4.0V)  
VISENA -VISENB  
-50  
50  
mV  
µA  
Current Sense Input Bias Current  
Ground referenced  
-100  
100  
FN6859.4  
April 29, 2011  
4
ZL2008  
Electrical Specifications VDD = 12V, TA = -40°C to +85°C unless otherwise noted. Typical values are at TA = +25°C. Boldface limits apply  
over the operating temperature range, -40°C to +85°C. (Continued)  
MIN  
MAX  
PARAMETER  
CONDITIONS  
(Note 14)  
TYP  
(Note 14)  
UNIT  
µA  
µA  
ms  
s
Current Sense Input Bias Current  
(Vout Referenced, Vout < 4.0V)  
ISENA  
ISENB  
-1  
-100  
2
1
100  
30  
500  
-
Soft-start Delay Duration Range  
(Note 8)  
Set using SS pin or resistor  
Set using I2C/SMBus  
0.002  
-
Soft-start Delay Duration Accuracy  
Turn-on delay (precise mode)  
(Notes 8, 9, 10)  
±0.25  
ms  
Turn-on delay (normal mode) (Note 10)  
Turn-off delay (Note 10)  
Set using SS pin or resistor  
Set using I2C  
-
-0.25/+4  
-
-
ms  
ms  
ms  
ms  
µs  
-
-0.25/+4  
Soft-start Ramp Duration Range  
2
0
20  
200  
Soft-start Ramp Duration Accuracy  
Logic Input/Output Characteristics  
Logic Input Leakage Current  
Logic Input Low, VIL  
100  
EN, PG, SCL, SDA, SALRT pins  
Multi-mode logic pins  
-250  
250  
0.8  
nA  
V
Logic Input OPEN (N/C)  
1.4  
V
Logic Input High, VIH  
2.0  
V
Logic Output Low, VOL  
IOL 4mA  
IOH -2mA  
0.4  
V
Logic Output High, VOH  
2.25  
V
Oscillator and Switching Characteristics  
Switching Frequency Range  
Switching Frequency Set-point Accuracy  
Maximum Pwm Duty Cycle  
Minimum Sync Pulse Width  
Input Clock Frequency Drift Tolerance  
Gate Drivers  
200  
-5  
1400  
5
kHz  
%
Predefined settings (See Table 11)  
Factory default  
95  
%
150  
-13  
ns  
%
External clock source  
13  
High-side driver voltage (VBST -VSW  
)
2
4.5  
3
V
High-side Driver Peak Gate Drive  
Current (Pull-down)  
(VBST -VSW) = 4.5V  
A
High-side Driver Pull-up Resistance  
High-side Driver Pull-down Resistance  
(VBST -VSW) = 4.5V, (VBST -VGH) = 50mV  
(VBST -VSW) = 4.5V, (VGH -VSW) = 50mV  
VR = 5V  
0.8  
0.5  
2.5  
2
2
Ω
Ω
A
Low-side Driver Peak Gate  
Drive Current (Pull-up)  
Low-side Driver Peak Gate  
Drive Current (Pull-down)  
VR = 5V  
1.8  
A
Low-side Driver Pull-up Resistance  
Low-side Driver Pull-down Resistance  
Switching Timing  
VR = 5V, (VR -VGL) = 50mV  
1.2  
0.5  
2
2
Ω
Ω
VR = 5V, (VGL -PGND) = 50mV  
(VBST -VSW) = 4.5V, CLOAD = 2.2nF  
VR = 5V, CLOAD = 2.2nF  
5
5
20  
20  
ns  
ns  
Gh Rise and Fall Time  
Gl Rise and Fall Time  
Tracking  
VTRK Input Bias Current  
VTRK Tracking Ramp Accuracy  
VTRK Regulation Accuracy  
VTRK = 5.5V  
-100  
-1  
110  
200  
+ 100  
1
µA  
mV  
%
100% Tracking, VOUT -VTRK  
100% Tracking, VOUT -VTRK  
FN6859.4  
April 29, 2011  
5
ZL2008  
Electrical Specifications VDD = 12V, TA = -40°C to +85°C unless otherwise noted. Typical values are at TA = +25°C. Boldface limits apply  
over the operating temperature range, -40°C to +85°C. (Continued)  
MIN  
MAX  
PARAMETER  
Fault Protection Characteristics  
UVLO Threshold Range  
CONDITIONS  
(Note 14)  
TYP  
(Note 14)  
UNIT  
Configurable via I2C/SMBus  
2.85  
-150  
16  
150  
V
mV  
UVLO Set-point Accuracy  
UVLO Hysteresis  
Factory default  
3
%
Configurable via I2C/SMBus  
0
100  
2.5  
%
UVLO Delay  
µs  
Power Good VOUT Threshold  
Power Good VOUT Hysteresis  
Power Good Delay  
Factory default  
90  
5
% VOUT  
%
Factory default  
Using pin-strap or resistor (Note 11)  
Configurable via I2C/SMBus  
Factory default  
0
200  
500  
ms  
0
s
VSEN Undervoltage Threshold  
VSEN Overvoltage Threshold  
VSEN Undervoltage Hysteresis  
85  
% VOUT  
% VOUT  
% VOUT  
% VOUT  
% VOUT  
µs  
Configurable via I2C/SMBus  
Factory default  
0
110  
115  
Configurable via I2C/SMBus  
0
115  
5
VSEN Undervoltage/Overvoltage  
Fault Response Time  
Factory default  
16  
Configurable via I2C/SMBus  
5
60  
µs  
Current Limit Set-point Accuracy  
(VOUT Referenced)  
±10  
% FS  
(Note 12)  
Current Limit Set-point Accuracy  
(Ground Referenced)  
1
±10  
5
% FS  
(Note 12)  
Current Limit Protection Delay  
Factory default  
tSW  
(Note 13)  
Configurable via I2C/SMBus  
32  
tSW  
(Note 13)  
Temperature Compensation of  
Factory default  
4400  
ppm/°C  
Current Limit Protection Threshold  
Configurable via I2C/SMBus  
Factory default  
100  
12700  
Thermal Protection Threshold  
(Junction Temperature)  
125  
125  
°C  
°C  
°C  
Configurable via I2C/SMBus  
-40  
Thermal Protection Hysteresis  
15  
NOTES:  
5. Does not include margin limits.  
6. Percentage of Full Scale (FS) with temperature compensation applied.  
7. VOUT measured at the termination of the VSEN+ and VSEN-sense points.  
8. The device requires a delay period following an enable signal and prior to ramping its output. Precise timing mode limits this delay period to approx  
2ms, where in normal mode it may vary up to 4ms. Current Share member minimum delay is 5ms. Current share reference must be 10ms greater  
than member delay.  
9. Precise ramp timing mode is only valid when using EN pin to enable the device rather than PMBus enable.  
10. The devices may require up to a 4ms delay following the assertion of the enable signal (normal mode) or following the de-assertion of the enable  
signal.  
11. Factory default Power Good delay is set to the same value as the soft-start ramp time.  
12. Percentage of Full Scale (FS) with temperature compensation applied  
13. tSW = 1/fSW, where fSW is the switching frequency.  
14. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.  
15. Nominal capacitance of logic pins is 5pF.  
FN6859.4  
April 29, 2011  
6
ZL2008  
Pin Configuration  
ZL2008  
(36 LD QFN)  
TOP VIEW  
1
2
3
4
5
6
7
8
9
27  
26  
25  
DGND  
SYNC  
SA0  
SA1  
ILIM  
CFG0  
SCL  
SDA  
VDD  
BST  
GH  
36-Pin QFN  
6 x 6 mm  
24 SW  
23  
PGND  
GL  
VR  
ISENA  
ISENB  
22  
21  
20  
19  
Exposed Paddle  
Connect to SGND  
SALRT  
Pin Descriptions  
Type  
Pin  
1
Label  
(Note 16)  
Description  
DGND  
PWR  
Digital ground. Common return for digital signals. Connect to low impedance ground plane.  
2
SYNC  
I/O, M  
(Note 17)  
Clock synchronization input. Used to set switching frequency of internal clock or for synchronization to external  
frequency reference.  
3
4
5
SA0  
SA1  
ILIM  
I, M  
I, M  
Serial address select pins. Used to assign unique SMBus address to each IC or to enable certain management  
features.  
Current limit select. Sets the overcurrent threshold voltage for ISENA and ISENB.  
6
7
CFG0  
SCL  
I, M  
I/O  
I/O  
O
Configuration pin. Used to setup current sharing and non-linear response.  
Serial clock. Connect to external host and/or to other ZL devices.  
Serial data. Connect to external host and/or to other ZL devices.  
Serial alert. Connect to external host if desired.  
8
SDA  
SALRT  
FC0  
9
10  
11  
12  
13  
14  
I
Loop compensation configuration pins.  
FC1  
V0  
I
Output voltage selection pins. Used to set VOUT set-point and VOUT max.  
V1  
UVLO  
I, M  
I, M  
Undervoltage lockout selection. Sets the minimum value for VDD voltage to enable VOUT.  
15  
SS  
Soft-start pin. Sets the output voltage ramp time during turn-on and turn-off. Sets the delay from when EN is  
asserted until the output voltage starts to ramp.  
16  
17  
18  
19  
20  
VTRK  
VSEN+  
VSEN-  
ISENB  
ISENA  
I
I
I
I
I
Tracking sense input. Used to track an external voltage source.  
Output voltage feedback. Connect to output regulation point.  
Output voltage feedback. Connect to load return or ground regulation point.  
Differential voltage input for current limit.  
Differential voltage input for current limit. High voltage tolerant.  
FN6859.4  
April 29, 2011  
7
ZL2008  
Pin Descriptions(Continued)  
Type  
Pin  
21  
22  
23  
24  
25  
26  
27  
Label  
VR  
(Note 16)  
PWR  
O
Description  
Internal 5V reference used to power internal drivers.  
Low side FET gate drive.  
GL  
PGND  
SW  
PWR  
PWR  
O
Power ground. Connect to low impedance ground plane.  
Drive train switch node.  
GH  
High-side FET gate drive.  
BST  
PWR  
PWR  
High-side drive boost voltage.  
Supply voltage.  
VDD  
(Note 18)  
28  
29  
V25  
PWR  
I
Internal 2.5V reference used to power internal circuitry.  
XTEMP  
External temperature sensor input. Connect to external 2N3904 diode connected transistor.  
30  
31  
32  
33  
DDC  
MGN  
CFG1  
EN  
I/O  
Digital-DC Bus. (Open Drain) Interoperability between Zilker Labs devices.  
Signal that enables margining of output voltage.  
I
I, M  
I
Configuration pin. Used to setup clock synchronization and sequencing.  
Enable input (active high). Pull-up to enable PWM switching and pull-down to disable PWM switching.  
34  
35  
PH_EN  
CFG2  
PG  
I
Phase enable input (active high). Pull-up to enable phase and pull-down to disable phase for current sharing.  
Configuration pin. Sets the phase offset (single-phase) or current sharing group position (multi-phase).  
Power good output.  
I, M  
O
36  
ePad  
SGND  
PWR  
Exposed thermal pad. Common return for analog signals; internal connection to SGND. Connect to low  
impedance ground plane.  
NOTES:  
16. I = Input, O = Output, PWR = Power or Ground. M = Multi-mode pins. Please refer to “Multi-mode Pins” on page 12.  
17. The SYNC pin can be used as a logic pin, a clock input or a clock output.  
18. VDD is measured internally and the value is used to modify the PWM loop gain.  
FN6859.4  
April 29, 2011  
8
ZL2008  
Typical Application Circuit  
The following application circuit represents a typical implementation of the ZL2008. For PMBus operation, it is recommended to tie the  
enable pin (EN) to SGND.  
VIN 12V  
F.B.1  
ENABLE  
C
IN  
4.7 µF  
25 V  
3 x 10 µF  
25 V  
PHASE ENABLE  
DDC Bus 3  
10 µF  
4 V  
CV25  
POWER GOOD OUTPUT  
QH  
DB  
BAT54  
1 µF  
16 V  
1
2
3
4
5
6
7
8
9
DGND  
VDD 27  
BST 26  
V25  
CB  
SYNC  
SA0  
GH  
VOUT  
25  
LOUT  
SA1  
SW 24  
2.2 µH  
COUT  
ILIM  
PGND 23  
ZL2008  
CFG0  
SCL  
GL  
22  
I2C/SMBus 2  
VR 21  
2 x 47 µF  
6.3 V  
470 µF 2*220 µF  
SDA  
ISENA 20  
2.5 V  
6.3 V  
SALRT  
ISENB  
POS-CAP  
19  
100 m  
QL  
EPAD  
CVR  
4.7 µF 6.3 V  
RTN  
Ground unification  
Notes:  
1. Ferrite bead is optional for input noise suppression  
2. The I2C/SMBus requires pull-up resistors. Please refer to the I C/SMBus specifications for more details.  
3. The DDC bus requires a pull-up resistor. The resistance will vary based on the capacitive loading of the bus(and on the number of devices  
2
connected). The 10 kΩ default value, assuming a maximum of100 pF per device, provides the necessary 1 µs pull-up rise time. Please refer to the  
DDC Bus section for more details.  
FIGURE 3. 12V to 1.8V/16A Application Circuit  
FN6859.4  
April 29, 2011  
9
ZL2008  
Its unique PWM loop utilizes an ideal mix of analog and digital  
ZL2008 Overview  
Digital-DC Architecture  
The ZL2008 is an innovative mixed-signal power conversion and  
power management IC based on Zilker Labs patented Digital-DC  
technology that provides an integrated, high performance step-  
down converter for a wide variety of power supply applications.  
blocks to enable precise control of the entire power conversion  
process with no software required, resulting in a very flexible  
device that is also very easy to use. An extensive set of power  
management functions are fully integrated and can be  
configured using simple pin connections. The user configuration  
can be saved in an internal non-volatile memory (NVM).  
Additionally, all functions can be configured and monitored via  
the SMBus hardware interface using standard PMBus  
commands, allowing ultimate flexibility.  
Today’s embedded power systems are typically designed for  
optimal efficiency at maximum load, reducing the peak thermal  
stress by limiting the total thermal dissipation inside the system.  
Unfortunately, many of these systems are often operated at load  
levels far below the peak where the power system has been  
optimized, resulting in reduced efficiency. While this may not  
cause thermal stress to occur, it does contribute to higher  
electricity usage and results in higher overall system operating  
costs.  
Once enabled, the ZL2008 is immediately ready to regulate  
power and perform power management tasks with no  
programming required. Advanced configuration options and real-  
time configuration changes are available via the I2C/SMBus  
interface if desired and continuous monitoring of multiple  
operating parameters is possible with minimal interaction from a  
host controller. Integrated sub-regulation circuitry enables single  
supply operation from any supply between 3V and 14V with no  
secondary bias supplies needed.  
Zilker Labs’ efficiency-adaptive ZL2008 DC/DC controller helps  
mitigate this scenario by enabling the power converter to  
automatically change their operating state to increase efficiency  
and overall performance with little or no user interaction needed.  
Input Voltage Bus  
>
PG  
MGN  
CFG(0,1,2)  
ILIM  
V(0,1)  
EN  
SS  
FC(0,1)  
NVM  
VDD  
VR  
VTRK  
Power Management  
BST  
MOSFET  
Drivers  
SYNC  
GEN  
Digital  
Compensator  
D-PWM  
SW  
VOUT  
NLR  
SYNC  
DDC  
PLL  
VSEN  
-
ADC  
ADC  
Σ
+
ISENB  
ISENA  
REFCN  
DAC  
VDD  
Voltage  
Sensor  
VSEN+  
VSEN-  
MUX  
SALRT  
SDA  
ADC  
XTEMP  
I2C  
Communication  
SCL  
SA(0,1)  
TEMP  
Sensor  
FIGURE 4. ZL2008 Block Diagram  
FN6859.4  
April 29, 2011  
10  
ZL2008  
Typically, buck converters specify a maximum duty cycle that  
Power Conversion Overview  
effectively limits the maximum output voltage that can be  
realized for a given input voltage. This duty cycle limit ensures  
that the lowside MOSFET is allowed to turn on for a minimum  
amount of time during each switching cycle, which enables the  
bootstrap capacitor (CB in Figure 5) to be charged up and provide  
adequate gate drive voltage for the high-side MOSFET. See  
section“High-side Driver Boost Circuit” on page 12 for more  
details.  
The ZL2008 operates as a voltage-mode, synchronous buck  
converter with a selectable constant frequency pulse width  
modulator (PWM) control scheme that uses external MOSFETs,  
capacitors, and an inductor to perform power conversion.  
VIN  
DB  
C
IN  
VR  
BST  
In general, the size of components L1 and COUT as well as the  
overall efficiency of the circuit are inversely proportional to the  
switching frequency, fSW. Therefore, the highest efficiency circuit  
may be realized by switching the MOSFETs at the lowest possible  
frequency; however, this will result in the largest component size.  
Conversely, the smallest possible footprint may be realized by  
switching at the fastest possible frequency but this gives a  
somewhat lower efficiency. Each user should determine the  
optimal combination of size and efficiency when determining the  
switching frequency for each application.  
QH  
QL  
GH  
SW  
CB  
ZL  
VOUT  
COUT  
GL  
FIGURE 5. Synchronous Buck Converter  
Figure 5 illustrates the basic synchronous buck converter  
topology showing the primary power train components. This  
converter is also called a step-down converter, as the output  
voltage must always be lower than the input voltage. In its most  
simple configuration, the ZL2008 requires two external N-  
channel power MOSFETs, one for the top control MOSFET (QH)  
and one for the bottom synchronous MOSFET (QL). The amount  
of time that QH is on as a fraction of the total switching period is  
known as the duty cycle D, which is described by Equation 1:  
The block diagram for the ZL2008 is illustrated in Figure 4. In  
this circuit, the target output voltage is regulated by connecting  
the differential VSEN pins directly to the output regulation point.  
The VSEN signal is then compared to a reference voltage that has  
been set to the desired output voltage level by the user. The error  
signal derived from this comparison is converted to a digital  
value with a low-resolution, analog to digital (A/D) converter. The  
digital signal is applied to an adjustable digital compensation  
filter, and the compensated signal is used to derive the  
appropriate PWM duty cycle for driving the external MOSFETs in a  
way that produces the desired output.  
VOUT  
(EQ. 1)  
D ≈  
VIN  
During time D, QH is on and VIN – VOUT is applied across the  
inductor. The current ramps up as shown in Figure 6.  
The ZL2008 has several features to improve the power  
conversion efficiency. A non-linear response (NLR) loop improves  
the response time and reduces the output deviation as a result of  
a load transient. The ZL2008 monitors the power converter’s  
operating conditions and continuously adjusts the turn-on and  
turn-off timing of the high-side and low-side MOSFETs to optimize  
the overall efficiency of the power supply. Adaptive performance  
optimization algorithms such as dead-time control, diode  
emulation, and frequency control are available to provide greater  
efficiency improvement.  
When QH turns off (time 1-D), the current flowing in the inductor  
must continue to flow from the ground up through QL, during  
which the current ramps down. Since the output capacitor COUT  
exhibits a low impedance at the switching frequency, the AC  
component of the inductor current is filtered from the output  
voltage so the load sees nearly a DC voltage.  
Power Management Overview  
VIN - VOUT  
ILPK  
The ZL2008 incorporates a wide range of configurable power  
management features that are simple to implement with no  
external components. Additionally, the ZL2008 includes circuit  
protection features that continuously safeguard the device and  
load from damage due to unexpected system faults. The ZL2008  
can continuously monitor input voltage, output voltage/current,  
internal temperature, and the temperature of an external  
thermal diode. A Power Good output signal is also included to  
enable power-on reset functionality for an external processor.  
IO  
0
ILV  
-VOUT  
All power management functions can be configured using either  
pin configuration techniques (see Figure 7) or via the I2C/SMBus  
interface. Monitoring parameters can also be pre-configured to  
provide alerts for specific conditions. See Application Note  
AN2033 for more details on SMBus monitoring.  
D
1 - D  
Time  
FIGURE 6. Inductor Waveform  
FN6859.4  
April 29, 2011  
11  
ZL2008  
The SMBus device address and VOUT_MAX are the only  
Multi-mode Pins  
parameters that must be set by external pins. All other device  
parameters can be set via the I2C/SMBus. The device address is  
set using the SA0 and SA1 pins. VOUT_MAX is determined as  
10% greater than the voltage set by the V0 and V1 pins.  
In order to simplify circuit design, the ZL2008 incorporates  
patented multi-mode pins that allow the user to easily configure  
many aspects of the device with no programming. Most power  
management features can be configured using these pins. The  
multi-mode pins can respond to four different connections as  
shown in Table 1. These pins are sampled when power is applied  
or by issuing a PMBus Restore command (See Application Note  
AN2033).  
Power Conversion Functional  
Description  
Internal Bias Regulators and Input Supply  
Connections  
The ZL2008 employs two internal low dropout (LDO) regulators to  
supply bias voltages for internal circuitry, allowing it to operate  
from a single input supply. The internal bias regulators are as  
follows:  
Pin-strap Settings: This is the simplest implementation method,  
as no external components are required. Using this method, each  
pin can take on one of three possible states: LOW, OPEN, or  
HIGH. These pins can be connected to the V25 pin for logic HIGH  
settings as this pin provides a regulated voltage higher than 2V.  
Using a single pin, one of three settings can be selected. Using  
two pins, one of nine settings can be selected.  
VR: The VR LDO provides a regulated 5V bias supply for the  
MOSFET driver circuits. It is powered from the VDD pin. A 4.7µF  
filter capacitor is required at the VR pin.  
TABLE 1. Multi-mode Pin Configuration  
Pin Tied To  
Value  
V25: The V25 LDO provides a regulated 2.5V bias supply for the  
main controller circuitry. It is powered from an internal 5V node.  
A 10µF filter capacitor is required at the V25 pin.  
LOW  
(Logic LOW)  
< 0.8VDC  
OPEN  
(N/C)  
No connection  
> 2.0VDC  
When the input supply (VDD) is higher than 5.5V, the VR pin  
should not be connected to any other pins. It should only have a  
filter capacitor attached as shown in Figure 8. Due to the dropout  
voltage associated with the VR bias regulator, the VDD pin must  
be connected to the VR pin for designs operating from a supply  
below 5.5V. Figure 8 illustrates the required connections for both  
cases.  
HIGH  
(Logic HIGH)  
Resistor to SGND  
Set by resistor value  
VIN  
VIN  
Logic  
high  
VDD  
VR  
VDD  
VR  
ZL  
ZL  
ZL  
ZL  
Open  
Multi-mode Pin  
Multi-mode Pin  
RSET  
Logic  
low  
Pin-strap  
Settings  
Resistor  
Settings  
3V VIN 5.5V  
5.5V <VIN 14V  
FIGURE 8. Input Supply Connections  
FIGURE 7. Pin-strap and Resistor Setting Examples  
Note: the internal bias regulators are not designed to be outputs  
for powering other circuitry. Do not attach external loads to any of  
these pins. The multi-mode pins may be connected to the V25  
pin for logic HIGH settings.  
Resistor Settings: This method allows a greater range of  
adjustability when connecting a finite value resistor (in a  
specified range) between the multi-mode pin and SGND.  
Standard 1% resistor values are used, and only every fourth E96  
resistor value is used so the device can reliably recognize the  
value of resistance connected to the pin while eliminating the  
error associated with the resistor accuracy. Up to 31 unique  
selections are available using a single resistor.  
High-side Driver Boost Circuit  
The gate drive voltage for the high-side MOSFET driver is  
generated by a floating bootstrap capacitor, CB (see Figure 5).  
When the lower MOSFET (QL) is turned on, the SW node is pulled  
to ground and the capacitor is charged from the internal VR bias  
regulator through diode DB. When QL turns off and the upper  
MOSFET (QH) turns on, the SW node is pulled up to VDD and the  
voltage on the bootstrap capacitor is boosted approximately 5V  
above VDD to provide the necessary voltage to power the  
high-side driver. A Schottky diode should be used for DB to help  
maximize the high-side drive supply voltage.  
I2C/SMBus Method: Almost any ZL2008 function can be  
configured via the I2C/SMBus interface using standard PMBus  
commands. Additionally, any value that has been configured  
using the pin-strap or resistor setting methods can also be  
re-configured and/or verified via the I2C/SMBus. See Application  
Note AN2033 for more details.  
FN6859.4  
April 29, 2011  
12  
ZL2008  
TABLE 3. Output Voltage Resistors Settings  
R0 or R1  
Output Voltage Selection  
STANDARD MODE  
Index  
(kΩ)  
The output voltage may be set to any voltage between 0.6V and  
5.0V provided that the input voltage is higher than the desired  
output voltage by an amount sufficient to prevent the device  
from exceeding its maximum duty cycle specification. Using the  
pin-strap method, VOUT can be set to any of nine standard  
voltages as shown in Table 2.  
0
1
10  
11  
2
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
3
4
TABLE 2. Output Voltage Pin-strap Settings  
V0  
5
6
LOW  
(V)  
OPEN  
(V)  
HIGH  
(V)  
7
LOW  
OPEN  
HIGH  
0.6  
1.2  
2.5  
0.8  
1.5  
3.3  
1.0  
1.8  
5.0  
8
V1  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
The resistor setting method can be used to set the output voltage  
to levels not available in Table 2. Resistors R0 and R1 are  
selected to produce a specific voltage between 0.6V and 5.0V in  
10mV steps. Resistor R1 provides a coarse setting and resistor  
R0 provides a fine adjustment, thus eliminating the additional  
errors associated with using two 1% resistors (this typically adds  
approx 1.4% error).  
To set VOUT using resistors, follow the steps below to calculate an  
index value and then use Table 3 to select the resistor that  
corresponds to the calculated index value as follows:  
1. Calculate Index1:  
Index1 = 4 x VOUT (VOUT in 10mV steps)  
2. Round the result down to the nearest whole number.  
3. Select the value of R1 from Table 3 using the Index1 rounded  
value from step 2.  
82.5  
90.9  
100  
4. Calculate Index0:  
5. Index0 = 100 x VOUT – (25 x Index1)  
6. Select the value of R0 from Table 3 using the Index0 value  
from Step 4.  
Example from Figure 9: For VOUT = 1.33V,  
Index1 = 4 x 1.33V = 5.32;  
From Table 3, R1 = 16.2kΩ  
Index0 = (100 x 1.33V) – (25 x 5) = 8;  
From Table 3, R0 = 21.5kΩ  
SMBUS MODE  
The output voltage may be set to any value between 0.6V and  
5.0V using a PMBus command over the I2C/SMBus interface.  
See Application Note AN2033 for details.  
FN6859.4  
April 29, 2011  
13  
ZL2008  
VIN  
POLA  
MODULE  
ZL  
GH  
SW  
VOUT  
1.33V  
ZL  
V0  
V1  
GL  
110 k  
10 kΩ  
V0  
V1  
R0  
21. 5 k  
R1  
16.2 kΩ  
Rset  
FIGURE 9. Output Voltage Resistor Setting Example  
FIGURE 11. RSET on a POLA Module  
POLA VOLTAGE TRIM MODE  
The POLA mode is activated through pin-strap by connecting a  
110kΩ resistor on V0 to SGND. The V1 pin is then used to adjust  
the output voltage as shown in Table 4.  
The output voltage mapping can be changed to match the  
voltage setting equations for POLA and DOSA standard modules.  
The standard method for adjusting the output voltage for a POLA  
module is defined by Equation 2:  
The POLA mode can also be activated through PMBus  
commands. See Application Note AN2033 for more details.  
0.69V  
TABLE 4. POLA Mode VOUT Settings  
(EQ. 2)  
RSET = 10kΩ×  
1.43kΩ  
VOUT 0.69V  
VOUT  
(V)  
RSET (kΩ)  
In series with 10kΩ resistor  
The resistor, RSET, is external to the POLA module. See Figure 10.  
0.700  
162  
110  
0.752  
POLA Module  
0.758  
100  
0.765  
90.9  
82.5  
75.0  
56.2  
51.1  
46.4  
42.2  
34.8  
31.6  
28.7  
23.7  
21.5  
19.6  
16.2  
13.3  
12.1  
9.09  
7.50  
5.62  
4.64  
2.87  
2.37  
1.21  
0.162  
0.69V  
+
0.772  
0.790  
VOUT  
-
0.800  
0.821  
0.834  
10k  
1.43kΩ  
0.848  
0.880  
Rset  
0.899  
0.919  
0.965  
FIGURE 10. Output Voltage Setting on POLA Module  
0.991  
1.000  
To stay compatible with this existing method for adjusting the  
output voltage and to keep the same external RSET resistor when  
using the ZL2008, the module manufacturer should add a 10kΩ  
resistor on the module as shown in Figure 11. Now, the same  
RSET used for an analog POLA module will provide the same  
output voltage when using a digital POLA module based on the  
ZL2008.  
1.100  
1.158  
1.200  
1.250  
1.500  
1.669  
1.800  
2.295  
2.506  
3.300  
5.000  
NOTE: (R0 = 110kΩ, R1 = RSET + 10kΩ)  
FN6859.4  
April 29, 2011  
14  
ZL2008  
DOSA VOLTAGE TRIM MODE  
On a DOSA module, the VOUT setting follows Equation 3:  
6900  
Start-up Procedure  
The ZL2008 follows a specific internal start-up procedure after  
power is applied to the VDD pin. Table 6 describes the start-up  
sequence.  
(EQ. 3)  
RSET  
=
VOUT 0.69V  
To maintain DOSA compatibility, the same scheme is used as with a  
POLA module except the 10kΩ resistor is replaced with a 8.66kΩ  
resistor as shown in Figure 12.  
If the device is to be synchronized to an external clock source, the  
clock frequency must be stable prior to asserting the EN pin. The  
device requires approximately 5ms to 10ms to check for specific  
values stored in its internal memory. If the user has stored values  
in memory, those values will be loaded. The device will then  
check the status of all multi-mode pins and load the values  
associated with the pin settings.  
DOSA  
ZL  
Once this process is completed, the device is ready to accept  
commands via the I2C/SMBus interface and the device is ready  
to be enabled. Once enabled, the device requires approximately  
2ms before its output voltage may be allowed to start its ramp-  
up process. If a soft-start delay period less than 2ms has been  
configured (using PMBus commands), the device will default to a  
2ms delay period. If a delay period greater than 2ms is  
configured, the device will wait for the configured delay period  
prior to starting to ramp its output.  
MODULE  
V0  
V1  
110 k  
8.66 kΩ  
Rset  
After the delay period has expired, the output will begin to ramp  
towards its target voltage according to the pre-configured  
soft-start ramp time that has been set using the SS pin. It should  
be noted that if the EN pin is tied to VDD, the device will still  
require approx 5ms to 10ms before the output can begin its  
ramp-up as described in Table 6.  
FIGURE 12. RSET on a DOSA Module  
The DOSA mode VOUT settings are listed in Table 5.  
TABLE 5. DOSA Mode VOUT Settings  
VOUT  
(V)  
RSET (kΩ)  
In series with 8.660kΩ resistor  
Soft-start Delay and Ramp Times  
0.700  
0.752  
0.758  
0.765  
0.772  
0.790  
0.800  
0.821  
0.834  
0.848  
0.880  
0.899  
0.919  
0.965  
0.991  
1.000  
1.100  
1.158  
1.200  
1.250  
1.500  
1.669  
1.800  
2.295  
2.506  
3.300  
5.000  
162  
113  
It may be necessary to set a delay from when an enable signal is  
received until the output voltage starts to ramp to its target  
value. In addition, the designer may wish to precisely set the time  
required for VOUT to ramp to its target value after the delay period  
has expired. These features may be used as part of an overall  
inrush current management strategy or to precisely control how  
fast a load IC is turned on. The ZL2008 gives the system designer  
several options for precisely and independently controlling both  
the delay and ramp time periods.  
100  
90.9  
82.5  
75.0  
57.6  
52.3  
47.5  
43.2  
36.5  
33.2  
30.1  
25.5  
22.6  
21.0  
17.8  
14.7  
13.3  
10.5  
8.87  
6.98  
6.04  
4.32  
3.74  
2.61  
1.50  
The soft-start delay period begins when the EN pin is asserted  
and ends when the delay time expires. The soft-start delay period  
is set using the SS pin. Precise ramp delay timing reduces the  
delay time variations but is only available when the appropriate  
bit in the MISC_CONFIG register has been set. Please refer to  
Application Note AN2033 for details.  
The soft-start ramp timer enables a precisely controlled ramp to  
the nominal VOUT value that begins once the delay period has  
expired. The ramp-up is guaranteed monotonic and its slope may  
be precisely set using the SS pin.  
The soft-start delay and ramp times can be set to standard  
values according to Table 7.  
NOTE: (R0 = 110kΩ, R1 = RSET + 8.66kΩ)  
FN6859.4  
April 29, 2011  
15  
ZL2008  
TABLE 6. ZL2106 START-UP SEQUENCE  
DESCRIPTION  
STEP #  
1
STEP NAME  
TIME DURATION  
Power Applied  
Input voltage is applied to the ZL2008’s VDD pin  
Depends on input supply ramp  
time  
2
Internal Memory Check The device will check for values stored in its internal memory. This step Approx 5ms to 10ms (device will  
is also performed after a Restore command.  
ignore an enable signal or PMBus  
traffic during this period)  
3
4
5
Multi-mode Pin Check  
Device Ready  
The device loads values configured by the multi-mode pins.  
The device is ready to accept an enable signal.  
-
Pre-ramp Delay  
The device requires approximately 2ms following an enable signal and  
prior to ramping its output. Additional pre-ramp delay may be  
configured using the SS pin.  
Approximately 2ms  
A PG delay period is defined as the time from when all conditions  
within the ZL2008 for asserting PG are met to when the PG pin is  
actually asserted. This feature is commonly used instead of using  
an external reset controller to control external digital logic. By  
default, the ZL2008 PG delay is set equal to the soft-start ramp  
time setting. Therefore, if the soft-start ramp time is set to 10ms,  
the PG delay will be set to 10ms. The PG delay may be set  
independently of the soft-start ramp using the I2C/SMBus as  
described in Application Note AN2033.  
TABLE 7. Soft-start Pin-strap Settings  
Delay Time  
(ms)  
Ramp Time  
SS Pin  
(ms)  
LOW  
OPEN  
HIGH  
2
5
2
5
10  
10  
If the desired soft-start delay and ramp times are not one of the  
values listed in Table 7, the times can be set to a custom value by  
connecting a resistor from the SS pin to SGND using the  
appropriate resistor value from Table 8. The value of this resistor  
is measured upon start-up or Restore and will not change if the  
resistor is varied after power has been applied to the ZL2008.  
See Figure 13 for typical connections using resistors.  
TABLE 8. SS Resistor Settings  
RSS  
(kΩ)  
Delay Time  
(ms)  
Ramp Time  
(ms)  
10  
5
10  
20  
2
11  
2
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
5
5
ZL  
10  
20  
2
RSS  
5
10  
15  
20  
30  
10  
20  
2
FIGURE 13. SS Pin Resistor Connections  
The soft-start delay and ramp times can also be set to custom  
values via the I2C/SMBus interface. When the SS delay time is  
set to 0ms, the device will begin its ramp-up after the internal  
circuitry has initialized (approx. 2ms). When the soft-start ramp  
period is set to 0ms, the output will ramp up as quickly as the  
output load capacitance and loop settings will allow. It is  
generally recommended to set the soft-start ramp to a value  
greater than 500µs to prevent inadvertent fault conditions due to  
excessive inrush current.  
5
10  
20  
2
5
10  
20  
2
Power Good  
The ZL2008 provides a Power Good (PG) signal that indicates the  
output voltage is within a specified tolerance of its target level  
and no fault condition exists. By default, the PG pin will assert if  
the output is within  
-10% of the target voltage. These limits and the polarity of the pin  
may be changed via the I2C/SMBus interface. See Application  
Note AN2033 for details.  
5
10  
20  
82.5  
FN6859.4  
April 29, 2011  
16  
ZL2008  
clock signal must also exhibit the necessary performance  
Switching Frequency and PLL  
requirements (see “Electrical Specifications” on page 4). In the  
event of a loss of the external clock signal, the output voltage  
may show transient over/undershoot.  
The ZL2008 incorporates an internal phase-locked loop (PLL) to  
clock the internal circuitry. The PLL can be driven by an external  
clock source connected to the SYNC pin. When using the internal  
oscillator, the SYNC pin can be configured as a clock source for  
other Zilker Labs devices.  
If this happens, the ZL2008 will automatically switch to its  
internal oscillator and switch at a frequency close to the previous  
incoming frequency.  
The SYNC pin is a unique pin that can perform multiple functions  
depending on how it is configured. The CFG1 pin is used to select  
the operating mode of the SYNC pin as shown in Table 9.  
Figure 14 illustrates the typical connections for each mode.  
Configuration C: SYNC AUTO DETECT  
When the SYNC pin is configured in auto detect mode (CFG1 pin  
is left OPEN), the device will automatically check for a clock  
signal on the SYNC pin after enable is asserted.  
TABLE 9. SYNC Pin Function Selection  
CFG1 Pin  
LOW  
SYNC Pin Function  
SYNC is configured as an input  
Auto Detect mode  
If a clock signal is present, The ZL2008’s oscillator will then  
synchronize the rising edge of the external clock. Refer to SYNC  
INPUT description.  
OPEN  
HIGH  
If no incoming clock signal is present, the ZL2008 will configure  
the switching frequency according to the state of the SYNC pin as  
listed in Table 10. In this mode, the ZL2008 will only read the  
SYNC pin connection during the start-up sequence. Changes to  
SYNC pin connections will not affect fSW until the power (VDD) is  
cycled off and on.  
SYNC is configured as an output  
fSW = 400kHz  
Configuration A: SYNC OUTPUT  
When the SYNC pin is configured as an output (CFG1 pin is tied  
HIGH), the device will run from its internal oscillator and will drive the  
resulting internal oscillator signal (preset to 400kHz) onto the SYNC  
pin so other devices can be synchronized to it. The SYNC pin will not  
be checked for an incoming clock signal while in this mode.  
TABLE 10. Switching Frequency Pin-strap Setting  
SYNC Pin  
LOW  
Frequency  
200kHz  
Configuration B: SYNC INPUT  
OPEN  
400kHz  
HIGH  
1MHz  
When the SYNC pin is configured as an input (CFG1 pin is tied  
LOW), the device will automatically check for a clock signal on  
the SYNC pin each time EN is asserted. The ZL2008’s oscillator  
will then synchronize with the rising edge of the external clock.  
Resistor  
See Table 11  
If the user wishes to run the ZL2008 at a frequency not listed in  
Table 10, the switching frequency can be set using an external  
resistor, RSYNC, connected between SYNC and SGND using Table 11.  
The incoming clock signal must be in the range of 200kHz to  
1.4MHz and must be stable when the enable pin is asserted. The  
Logic  
high  
SYNC  
200 kHz – 1.33MHz  
ZL  
SYNC  
200kHz – 1.4MHz  
ZL  
A) SYNC = output  
B) SYNC = input  
N/ C  
N/ C  
N/ C  
Logic  
high  
Open  
SYNC  
SYNC  
SYNC  
200kHz – 1.4MHz  
OR  
OR  
RSYNC  
ZL  
ZL  
ZL  
Logic  
low  
C) SYNC = Auto Detect  
FIGURE 14. Sync Pin Configurations  
FN6859.4  
April 29, 2011  
17  
ZL2008  
TABLE 11. Switching Frequency Resistor Settings  
TABLE 12. Power Supply Requirements  
RSYNC  
fSW  
(kΩ)  
(kHz)  
Parameter  
Input voltage (VIN  
Output voltage (VOUT  
Output current (IOUT  
Output voltage ripple  
Range  
Example Value  
12V  
10  
200  
222  
242  
267  
296  
320  
364  
400  
421  
471  
)
3.0V to 14.0V  
0.6V to 5.0V  
0A to ~25A  
< 3% of VOUT  
11  
)
1.2V  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
46.4  
51.1  
56.2  
68.1  
)
20A  
1% of VOUT  
(Vorip  
)
Output load step (Iostep  
Output load step rate  
)
< Io  
50% of Io  
10A/µs  
± 50mV  
Output deviation due to load step  
Maximum PCB temp.  
Desired efficiency  
+120°C  
+85°C  
85%  
533  
571  
Other considerations  
Various  
Optimize for small  
size  
615  
727  
800  
889  
1000  
1143  
1333  
DESIGN GOAL TRADE-OFFS  
The design of the buck power stage requires several  
compromises among size, efficiency, and cost. The inductor core  
loss increases with frequency, so there is a trade-off between a  
small output filter made possible by a higher switching frequency  
and getting better power supply efficiency. Size can be decreased  
by increasing the switching frequency at the expense of  
efficiency. Cost can be minimized by using through-hole  
inductors and capacitors; however these components are  
physically large.  
The switching frequency can also be set to any value between  
200kHz and 1.33MHz using the I2C/SMBus interface. The  
available frequencies below 1.4MHz are defined by fSW = 8MHz/N,  
where the whole number N is 6 N 40. See Application Note  
AN2033 for details.  
To start the design, select a switching frequency based on  
Table 13. This frequency is a starting point and may be adjusted  
as the design progresses.  
TABLE 13. Circuit Design Consideration  
Frequency Range  
200kHz to 400kHz  
400kHz to 800kHz  
800kHz to 1.4MHz  
Efficiency  
Highest  
Moderate  
Lower  
Circuit Size  
Larger  
If a value other than fSW = 8MHz/N is entered using a PMBus  
command, the internal circuitry will select the valid switching  
frequency value that is closest to the entered value. For example,  
if 810kHz is entered, the device will select 800kHz (N=10).  
Smaller  
Smallest  
When multiple Zilker Labs devices are used together, connecting  
the SYNC pins together will force all devices to synchronize with  
each other. The CFG1 pin of one device must set its SYNC pin as  
an output and the remaining devices must have their SYNC pins  
set as Auto Detect.  
INDUCTOR SELECTION  
The output inductor selection process must include several trade-  
offs. A high inductance value will result in a low ripple current  
(Iopp), which will reduce output capacitance and produce a low  
output ripple voltage, but may also compromise output transient  
load performance. Therefore, a balance must be struck between  
output ripple and optimal load transient performance. A good  
starting point is to select the output inductor ripple equal to the  
expected load transient step magnitude (Iostep):  
Note: The switching frequency read back using the appropriate  
PMBus command will differ slightly from the selected values in  
Table 11. The difference is due to hardware quantization.  
Power Train Component Selection  
The ZL2008 is a synchronous buck converter that uses external  
MOSFETs, inductor and capacitors to perform the power  
conversion process. The proper selection of the external  
components is critical for optimized performance.  
(EQ. 4)  
Iopp = Iostep  
To select the appropriate external components for the desired  
performance goals, the power supply requirements listed in  
Table 12 must be known.  
FN6859.4  
April 29, 2011  
18  
ZL2008  
Now the output inductance can be calculated using Equation 5,  
where VINM is the maximum input voltage:  
shown in Equations 9 and 10:  
Iopp  
COUT  
=
VOUT  
VINM  
(EQ. 9)  
Vorip  
VOUT × 1−  
8× fsw ×  
(EQ. 5)  
2
LOUT  
=
fsw× Iopp  
Vorip  
(EQ. 10)  
The average inductor current is equal to the maximum output  
current. The peak inductor current (ILpk) is calculated using  
Equation 6 where IOUT is the maximum output current:  
ESR =  
2× Iopp  
Use these values to make an initial capacitor selection, using a  
single capacitor or several capacitors in parallel.  
Iopp  
(EQ. 6)  
ILpk = IOUT  
+
2
After a capacitor has been selected, the resulting output voltage  
ripple can be calculated using Equation 11:  
Select an inductor rated for the average DC current with a peak  
current rating above the peak current computed above.  
Iopp  
(EQ. 11)  
Vorip = Iopp × ESR +  
In overcurrent or short-circuit conditions, the inductor may have  
currents greater than 2X the normal maximum rated output  
current. It is desirable to use an inductor that still provides some  
inductance to protect the load and the MOSFETs from damaging  
currents in this situation.  
8× fsw ×COUT  
Because each part of this equation was made to be less than or  
equal to half of the allowed output ripple voltage, the Vorip should  
be less than the desired maximum output ripple.  
Once an inductor is selected, the DCR and core losses in the  
inductor are calculated. Use the DCR specified in the inductor  
manufacturer’s datasheet.  
INPUT CAPACITOR  
It is highly recommended that dedicated input capacitors be  
used in any point-of-load design, even when the supply is  
powered from a heavily filtered 5V or 12V “bulk” supply from an  
off-line power supply. This is because of the high RMS ripple  
current that is drawn by the buck converter topology. This ripple  
(ICINrms) can be determined from Equation 12:  
2
(EQ. 7)  
P
= DCR× ILrms  
LDCR  
ILrms is given by Equation 8:  
2
(
+
)
Iopp  
2
(EQ. 8)  
ILrms = IOUT  
12  
(EQ. 12)  
ICINrms = IOUT × D × (1D)  
where IOUT is the maximum output current. Next, calculate the  
core loss of the selected inductor. Since this calculation is  
specific to each inductor and manufacturer, refer to the chosen  
inductor datasheet. Add the core loss and the ESR loss and  
compare the total loss to the maximum power dissipation  
recommendation in the inductor datasheet.  
Without capacitive filtering near the power supply circuit, this  
current would flow through the supply bus and return planes,  
coupling noise into other system circuitry. The input capacitors  
should be rated at 1.2X the ripple current calculated above to  
avoid overheating of the capacitors due to the high ripple current,  
which can cause premature failure. Ceramic capacitors with X7R  
or X5R dielectric with low ESR and 1.1X the maximum expected  
input voltage are recommended.  
OUTPUT CAPACITOR SELECTION  
Several trade-offs must also be considered when selecting an  
output capacitor. Low ESR values are needed to have a small  
output deviation during transient load steps (Vosag) and low  
output voltage ripple (Vorip). However, capacitors with low ESR,  
such as semi-stable (X5R and X7R) dielectric ceramic capacitors,  
also have relatively low capacitance values. Many designs can  
use a combination of high capacitance devices and low ESR  
devices in parallel.  
BOOTSTRAP CAPACITOR SELECTION  
The high-side driver boost circuit utilizes an external Schottky  
diode (DB) and an external bootstrap capacitor (CB) to supply  
sufficient gate drive for the high-side MOSFET driver. DB should  
be a 20mA, 30V Schottky diode or equivalent device and CB  
should be a 1µF ceramic type rated for at least 6.3V.  
For high ripple currents, a low capacitance value can cause a  
significant amount of output voltage ripple. Likewise, in high  
transient load steps, a relatively large amount of capacitance is  
needed to minimize the output voltage deviation while the  
inductor current ramps up or down to the new steady state  
output current value.  
QL SELECTION  
The bottom MOSFET should be selected primarily based on the  
device’s RDS(ON) and secondarily based on its gate charge. To  
choose QL, use the following equation and allow 2% to 5% of the  
output power to be dissipated in the RDS(ON) of QL (lower output  
voltages and higher step-down ratios will be closer to 5%):  
As a starting point, apportion one-half of the output ripple  
voltage to the capacitor ESR and the other half to capacitance, as  
FN6859.4  
April 29, 2011  
19  
ZL2008  
Calculate the RMS current in QL as follows:  
where Qg is the gate charge of the selected QH and Igdr is the  
peak gate drive current available from the ZL2008.  
(EQ. 13)  
(EQ. 14)  
P = 0.05×VOUT × IOUT  
QL  
Although the ZL2008 has a typical gate drive current of 3A, use  
the minimum guaranteed current of 2A for a conservative  
design. Using the calculated switching time, calculate the  
switching power loss in QH using:  
Ibotrms = ILrms × 1D  
(EQ. 22)  
P
=VINM ×tsw × IOUT × fsw  
swtop  
Calculate the desired maximum RDS(ON) as follows:  
P
QL  
The total power dissipated by QH is given by Equation 23:  
(EQ. 15)  
RDS (ON )  
=
2
(
Ibotrms  
)
(EQ. 23)  
P
= P + P  
QHtot  
QH  
swtop  
Note that the RDS(ON) given in the manufacturer’s datasheet is  
measured at +25°C. The actual RDS(ON) in the end-use  
application will be much higher. For example, a Vishay Si7114  
MOSFET with a junction temperature of +125°C has an RDS(ON)  
that is 1.4 times higher than the value at +25°C. Select a  
candidate MOSFET, and calculate the required gate drive current  
as follows:  
MOSFET THERMAL CHECK  
Once the power dissipations for QH and QL have been calculated,  
the MOSFETs junction temperature can be estimated. Using the  
junction-to-case thermal resistance (Rth) given in the MOSFET  
manufacturer’s datasheet and the expected maximum printed  
circuit board temperature, calculate the junction temperature as  
follows:  
(EQ. 16)  
Ig = fSW ×Qg  
(EQ. 24)  
(
)
Tj max = Tpcb + P × Rth  
Q
Keep in mind that the total allowed gate drive current for both QH  
and QL is 80mA.  
CURRENT SENSING COMPONENTS  
Once the current sense method has been selected (refer to  
section “Current Limit Threshold Selection” on page 21), the  
components are selected as follows.  
MOSFETs with lower RDS(ON) tend to have higher gate charge  
requirements, which increases the current and resulting power  
required to turn them on and off. Since the MOSFET gate drive  
circuits are integrated in the ZL2008, this power is dissipated in  
the ZL2008 according to Equation 17:  
When using the inductor DCR sensing method, the user must  
also select an R/C network comprised of R1 and CL (see  
Figure 15).  
(EQ. 17)  
P = fsw ×Qg ×VINM  
QL  
GH  
SW  
QH SELECTION  
In addition to the RDS(ON) loss and gate charge loss, QH also has  
switching loss. The procedure to select QH is similar to the  
procedure for QL. First, assign 2% to 5% of the output power to  
be dissipated in the RDS(ON) of QH using the equation for QL  
above. As was done with QL, calculate the RMS current as  
follows:  
CL  
R1  
ZL  
GL  
R2  
ISENA  
ISENB  
FIGURE 15. DCR Current Sensing  
(EQ. 18)  
Itoprms = ILrms × D  
For the voltage across CL to reflect the voltage across the DCR of  
the inductor, the time constant of the inductor must match the  
time constant of the RC network. That is:  
Calculate a starting RDS(ON) as follows, in this example using 5%:  
(EQ. 19)  
τRC = τL/ DCR  
P
= 0.05×VOUT × IOUT  
QH  
(EQ. 25)  
L
R1 CL =  
P
QH  
(EQ. 20)  
DCR  
RDS (ON )  
=
2
(
)
Itoprms  
For L, use the average of the nominal value and the minimum  
value. Include the effects of tolerance, DC Bias and switching  
frequency on the inductance when determining the minimum  
value of L. Use the typical value for DCR.  
Select a MOSFET and calculate the resulting gate drive current.  
Verify that the combined gate drive current from QL and QH does  
not exceed 80mA.  
Next, calculate the switching time using:  
The value of R1 should be as small as feasible and no greater  
than 5kΩ for best signal-to-noise ratio. The designer should  
make sure the resistor package size is appropriate for the power  
dissipated and include this loss in efficiency calculations. In  
calculating the minimum value of R1, the average voltage across  
Qg  
(EQ. 21)  
tSW  
=
Igdr  
FN6859.4  
April 29, 2011  
20  
ZL2008  
CL (which is the average IOUTDCR product) is small and can be  
neglected. Therefore, the minimum value of R1 may be  
VIN  
approximated Equation 26:,  
2
)
2
GH  
D
(
VIN max VOUT  
+
(
1D VOUT  
)
(EQ. 26)  
R1min  
=
SW  
ISENA  
VOUT  
ZL  
PR1pkgmax δP  
GL  
where PR1pkg-max is the maximum power dissipation  
ISENB  
specification for the resistor package and P is the derating factor  
for the same parameter (eg.: PR1pkg-max = 0.0625W for 0603  
package, P = 50% @ 85°C). Once R1-min has been calculated,  
solve for the maximum value of CL from Equation 27:  
MOSFET RDS(ON) Sensing  
VIN  
L
(EQ. 27)  
CLmax  
=
GH  
SW  
R1min DCR  
VOUT  
and choose the next-lowest readily available value (e.g.: For  
CL-max = 1.86µF, CL = 1.5µF is a good choice). Then substitute  
the chosen value into the same equation and re-calculate the  
value of R1. Choose the 1% resistor standard value closest to this  
re-calculated value of R1. The error due to the mismatch of the  
two time constants is expressed in Equation 28:  
ZL  
GL  
ISENA  
ISENB  
Inductor DCR Sensing  
(VOUT must be less than 4.0 V)  
FIGURE 16. Current Sensing Methods  
R1 CL DCR  
(EQ. 28)  
ετ = 1−  
100%  
Lavg  
To set the current limit threshold, the user must first select a  
current sensing method. The ZL2008 incorporates two methods  
for current sensing, synchronous MOSFET RDS(ON) sensing and  
inductor DC resistance (DCR) sensing; Figure 16 shows a  
simplified schematic for each method. The current sensing  
method can be selected using the CFG2 pin, as shown in  
Tables 26 and 28, or via the I2C/SMBus interface. Please refer to  
Application Note AN2033 for details.  
The value of R2 should be simply five times that of R1:  
(EQ. 29)  
R2 = 5R1  
For the RDS(ON) current sensing method, the external low side  
MOSFET will act as the sensing element as indicated in  
Figure 16.  
In addition to selecting the current sensing method, the ZL2008  
gives the power supply designer several choices for the fault  
response during over or under current condition. The user can  
select the number of violations allowed before declaring fault, a  
blanking time and the action taken when a fault is detected.  
Current Limit Threshold Selection  
It is recommended that the user include a current limiting  
mechanism in their design to protect the power supply from  
damage and prevent excessive current from being drawn from  
the input supply in the event that the output is shorted to ground  
or an overload condition is imposed on the output. Current  
limiting is accomplished by sensing the current through the  
circuit during a portion of the duty cycle.  
The blanking time represents the time when no current  
measurement is taken. This is to avoid taking a reading just after  
a switching transition (less accurate due to potential ringing). It is  
a configurable parameter.  
Output current sensing can be accomplished by measuring the  
voltage across a series resistive sensing element according to  
Equation 30:  
Once the sensing method has been selected, the user must  
select the voltage threshold (VLIM), the desired current limit  
threshold, and the resistance of the sensing element.  
(EQ. 30)  
VLIM = ILIM × RSENSE  
The current limit threshold voltage can be selected by simply  
connecting the ILIM pin as shown in Table 14. The ground-  
referenced sensing method is being used in this mode. By  
default, the IOUT_CAL_GAIN is set to 1mΩ for DCR mode and  
2mΩ for RDS mode.  
Where:  
ILIM is the desired maximum current that should flow in the  
circuit.  
RSENSE is the resistance of the sensing element.  
TABLE 14. Current Limit Threshold Voltage Pin-strap Settings  
VLIM is the voltage across the sensing element at the point the  
circuit should start limiting the output current.  
R
DS VLIM  
(mV)  
DCR VLIM  
(mV)  
ILIM Pin  
LOW  
The ZL2008 supports “lossless” current sensing by measuring  
the voltage across a resistive element that is already present in  
the circuit. This eliminates additional efficiency losses incurred  
by devices that must use an additional series resistance in the  
circuit.  
50  
60  
70  
25  
30  
35  
OPEN  
HIGH  
FN6859.4  
April 29, 2011  
21  
ZL2008  
TABLE 15. Current Limit Threshold Voltage Resistor Settings  
VIN  
RLIM  
(kΩ)  
RDS VLIM  
(mV)  
DCR VLIM  
(mV)  
D
L
10  
0
5
0
DPWM  
VOUT  
11  
2.5  
5
1-D  
C
RO  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
105  
110  
115  
120  
RC  
7.5  
10  
12.5  
15  
Compensation  
17.5  
20  
FIGURE 17. Control Loop Block Diagram  
In the ZL2008, the compensation zeros and gain are set by  
configuring the FC0 and FC1 pins or via the I2C/SMBus interface  
once the user has calculated the required settings. This method  
eliminates the inaccuracies due to the component tolerances  
associated with using external resistors and capacitors required  
with traditional analog controllers.  
22.5  
25  
27.5  
30  
32.5  
35  
The compensation is configured using a baseline set of PID taps  
which are scaled on the factors of Gain, Q and Fn as shown in  
Tables 16, 17 and 18. The parameters Gain, Q and Fn are defined  
in AN2035 and are parameters of the compensator (not the  
power stage being compensated).  
37.5  
40  
42.5  
45  
The selection of these scaling factors is based on compensation  
required for additional output capacitance used in an  
application.  
47.5  
50  
TABLE 16. FC0 Pin-strap Settings  
52.5  
55  
FC0 Pin  
LOW  
Gain Scale (dB)  
Q-new/Q-base  
1
82.5  
90.9  
100  
-12  
0
57.5  
60  
OPEN  
HIGH  
6
The threshold voltage can also be selected in 5mV increments by  
connecting a resistor, RLIM, between the ILIM pin and ground  
according to Table 15. This method is preferred if the user does not  
desire to use or does not have access to the I2C/SMBus interface  
and the desired threshold value is contained in Table 15.  
TABLE 17. FC1 Pin-strap Settings  
FC1 Pin  
Fn-new/Fn-base  
LOW  
OPEN  
HIGH  
The current limit threshold can also be set to a custom value via  
the I2C/SMBus interface. Please refer to Application Note  
AN2033 for further details.  
1
Loop Compensation  
The scaling factors are applied to the baseline set of taps to  
achieve the desired compensation results. These baseline taps  
correspond to zeroes of the form:  
The ZL2008 operates as a voltage-mode synchronous buck  
controller with a fixed frequency PWM scheme. Although the  
ZL2008 uses a digital control loop, it operates much like a  
traditional analog PWM controller. Figure 17 is a simplified block  
diagram of the ZL2008 control loop, which differs from an  
analog control loop only by the constants in the PWM and  
compensation blocks. As in the analog controller case, the  
compensation block compares the output voltage to the desired  
voltage reference and compensation zeroes are added to keep  
the loop stable. The resulting integrated error signal is used to  
drive the PWM logic, converting the error signal to a duty cycle to  
drive the external MOSFETs.  
2
s
s
(EQ. 31)  
G
base 1+  
+
(Qbase 2π fnbase  
)
(Qbase*2π fnbase)  
Where Gbase = 20dB  
base = 2  
fnbase = fSW/10  
Q
Both the baseline taps and the calculated taps determined by the  
FC0 and FC1 resistors can be read via the I2C/SMBus interface.  
Please refer to Application Note AN2033 for further details.  
FN6859.4  
April 29, 2011  
22  
ZL2008  
TABLE 18. Loop Compensation Resistor Settings  
RFC0  
(kΩ)  
Gain Scale  
(dB)  
RFC1  
(kΩ)  
Q-new/Q-base  
0.6813  
0.4642  
0.3162  
0.2154  
0.1468  
0.1000  
0.6813  
0.4642  
0.3162  
0.2154  
0.1468  
0.1000  
0.6813  
0.4642  
0.3162  
0.2154  
0.1468  
0.1000  
1.0000  
0.6813  
0.4642  
0.3162  
0.2154  
0.1468  
0.1000  
0.6813  
0.4642  
0.3162  
0.2154  
0.1468  
0.1000  
Fn-new/Fn-base  
1.0000  
0.9050  
0.8190  
0.7411  
0.6707  
0.6070  
0.5493  
0.4971  
0.4498  
0.4071  
0.3684  
0.3334  
0.3017  
0.2730  
0.2471  
0.2236  
0.2024  
0.1831  
0.1657  
0.1500  
0.1357  
0.1228  
0.1112  
0.1006  
0.0910  
0.0824  
0.0745  
0.0675  
0.0611  
0.0553  
0.0500  
10  
10  
11  
11  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
12  
6
0
-6  
82.5  
90.9  
100  
110  
121  
133  
147  
162  
178  
82.5  
90.9  
100  
110  
121  
133  
147  
162  
178  
-12  
FN6859.4  
April 29, 2011  
23  
ZL2008  
Non-linear Response (NLR) Settings  
Adaptive Diode Emulation  
The ZL2008 incorporates a non-linear response (NLR) loop that  
decreases the response time and the output voltage deviation in  
the event of a sudden output load current step. The NLR loop  
incorporates a secondary error signal processing path that  
bypasses the primary error loop when the output begins to  
transition outside of the standard regulation limits. This scheme  
results in a higher equivalent loop bandwidth than what is  
possible using a traditional linear loop.  
Most power converters use synchronous rectification to optimize  
efficiency over a wide range of input and output conditions.  
However, at light loads the synchronous MOSFET will typically  
sink current and introduce additional energy losses associated  
with higher peak inductor currents, resulting in reduced  
efficiency. Adaptive diode emulation mode turns off the low-side  
FET gate drive at low load currents to prevent the inductor current  
from going negative, reducing the energy losses and increasing  
overall efficiency. Diode emulation is available to single-phase  
devices only.  
When a load current step function imposed on the output causes  
the output voltage to drop below the lower regulation limit, the  
NLR circuitry will force a positive correction signal that will turn  
on the upper MOSFET and quickly force the output to increase.  
Conversely, a negative load step (i.e. removing a large load  
current) will cause the NLR circuitry to force a negative correction  
signal that will turn on the lower MOSFET and quickly force the  
output to decrease.  
Note: the overall bandwidth of the device may be reduced when  
in diode emulation mode. It is recommended that diode  
emulation is disabled prior to applying significant load steps.  
Adaptive Frequency Control  
Since switching losses contribute to the efficiency of the power  
converter, reducing the switching frequency will reduce the  
switching losses and increase efficiency. The ZL2008 includes  
Adaptive Frequency Control mode, which effectively reduces the  
observed switching frequency as the load decreases.  
NLR can be configured using resistor pin-straps as follows:  
CFG0 disables NLR or enables NLR inner thresholds to 1.5%,  
2% or 3% (see Table 30).  
CFG1 sets NLR inner thresholds timeout and blanking to 1  
and 4 or 2 and 8 (see Table 27).  
Adaptive frequency mode is enabled by setting bit 0 of  
MISC_CONFIG to 1 and is only available while the device is  
operating within Adaptive Diode Emulation Mode. As the load  
current is decreased, diode emulation mode decreases the GL  
on-time to prevent negative inductor current from flowing. As the  
load is decreased further, the GH pulse width will begin to  
decrease while maintaining the programmed frequency, fPROG  
(set by the FREQ_SWITCH command).  
Please refer to Application Note AN2032 for more details  
regarding NLR settings.  
Efficiency Optimized Driver Dead-time  
Control  
The ZL2008 utilizes a closed loop algorithm to optimize the  
dead-time applied between the gate drive signals for the top and  
bottom FETs. In a synchronous buck converter, the MOSFET drive  
circuitry must be designed such that the top and bottom  
MOSFETs are never in the conducting state at the same time.  
Potentially damaging currents flow in the circuit if both top and  
bottom MOSFETs are simultaneously on for periods of time  
exceeding a few nanoseconds. Conversely, long periods of time in  
which both MOSFETs are off reduce overall circuit efficiency by  
allowing current to flow in their parasitic body diodes.  
fSW(D)  
fPROG  
fMIN  
D
It is therefore advantageous to minimize this dead-time to  
provide optimum circuit efficiency. In the first order model of a  
buck converter, the duty cycle is determined by Equation 32:  
0
DNOM  
2
Duty Cycle  
VOUT  
(EQ. 32)  
D ≈  
FIGURE 18. Adaptive Frequency  
VIN  
However, non-idealities exist that cause the real duty cycle to  
extend beyond the ideal. Dead-time is one of those non-idealities  
that can be manipulated to improve efficiency. The ZL2008 has  
an internal algorithm that constantly adjusts dead-time non-  
overlap to minimize duty cycle, thus maximizing efficiency. This  
circuit will null out dead-time differences due to component  
variation, temperature, and loading effects.  
Once the GH pulse width (D) reaches 50% of the nominal duty  
cycle, DNOM (determined by Vin and Vout), the switching  
frequency will start to decrease according to Equation 33:  
If  
DNOM  
2
This algorithm is independent of application circuit parameters  
such as MOSFET type, gate driver delays, rise and fall times and  
circuit layout. In addition, it does not require drive or MOSFET  
voltage or current waveform measurements.  
then,  
2( fSW fMIN  
)
(EQ. 33)  
D + fMIN  
DNOM  
FN6859.4  
April 29, 2011  
24  
ZL2008  
Otherwise fSW(D) = fPROG  
TABLE 20. UVLO Threshold Resistor Settings  
This is illustrated in Figure 18. Due to quantizing effects inside  
the IC, the ZL2008 will decrease its frequency in steps between  
fSW and fMIN. The quantity and magnitude of the steps will  
depend on the difference between fSW and fMIN as well as the  
frequency range.  
RUVLO  
(kΩ)  
UVLO  
(V)  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
2.85  
3.14  
3.44  
3.79  
4.18  
4.59  
5.06  
5.57  
6.13  
6.75  
7.42  
8.18  
8.99  
9.9  
Adaptive frequency mode is not available for current sharing  
groups when using an external clock, or if the device is outputting  
a clock signal on its SYNC pin.  
Power Management Functional  
Description  
Input Undervoltage Lockout  
The input undervoltage lockout (UVLO) prevents the ZL2008 from  
operating when the input falls below a preset threshold,  
indicating the input supply is out of its specified range. The UVLO  
threshold (VUVLO) can be set between 2.85V and 16V using the  
UVLO pin. The simplest implementation is to connect the UVLO  
pin as shown in Table 19. If the UVLO pin is left unconnected, the  
UVLO threshold will default to 4.5V.  
TABLE 19. UVLO Threshold Pin-strap Settings  
10.9  
12  
UVLO Threshold  
UVLO Pin  
LOW  
(V)  
3
82.5  
90.9  
100  
13.2  
14.54  
16  
OPEN  
HIGH  
4.5  
10.8  
The UVLO voltage can also be set to any value between 2.85V  
and 16V via the I2C/SMBus interface.  
If the desired UVLO threshold is not one of the listed choices, the  
user can configure a threshold between 2.85V and 16V by  
connecting a resistor between the UVLO pin and SGND by  
selecting the appropriate resistor from Table 20.  
Once an input undervoltage fault condition occurs, the device  
can respond in a number of ways as follows:  
1. Continue operating without interruption.  
2. Continue operating for a given delay period, followed by  
shutdown if the fault still exists. The device will remain in  
shutdown until instructed to restart.  
3. Initiate an immediate shutdown until the fault has been  
cleared. The user can select a specific number of retry  
attempts.  
The default response from a UVLO fault is an immediate  
shutdown of the device. The device will continuously check for  
the presence of the fault condition. If the fault condition is no  
longer present, the ZL2008 will be re-enabled.  
FN6859.4  
April 29, 2011  
25  
ZL2008  
Please refer to Application Note AN2033 for details on how to  
configure the UVLO threshold or to select specific UVLO fault  
response options via the I2C/SMBus interface.  
duty cycle to match the original target voltage and the output will  
ramp down to the pre-configured output voltage.  
Output Overvoltage Protection  
The ZL2008 offers an internal output overvoltage protection  
circuit that can be used to protect sensitive load circuitry from  
being subjected to a voltage higher than its prescribed limits. A  
hardware comparator is used to compare the actual output  
voltage (seen at the VSEN pin) to a threshold set to 15% higher  
than the target output voltage (the default setting). If the VSEN  
voltage exceeds this threshold, the PG pin will de-assert and the  
device can then respond in a number of ways as follows:  
1. Initiate an immediate shutdown until the fault has been  
cleared. The user can select a specific number of retry  
attempts.  
2. Turn off the high-side MOSFET and turn on the low-side  
MOSFET. The low-side MOSFET remains ON until the device  
attempts a restart.  
The default response from an overvoltage fault is to immediately  
shut down. The device will continuously check for the presence of  
the fault condition, and when the fault condition no longer exists  
the device will be re-enabled.  
For continuous overvoltage protection when operating from an  
external clock, the only allowed response is an immediate  
shutdown.  
Please refer to Application Note AN2033 for details on how to  
select specific overvoltage fault response options via I2C/SMBus.  
Output Pre-Bias Protection  
FIGURE 19. Output Responses to Pre-bias Voltages  
An output pre-bias condition exists when an externally applied  
voltage is present on a power supply’s output before the power  
supply’s control IC is enabled. Certain applications require that  
the converter not be allowed to sink current during start up if a  
pre-bias condition exists at the output. The ZL2008 provides  
pre-bias protection by sampling the output voltage prior to  
initiating an output ramp.  
If a pre-bias voltage higher than the overvoltage limit exists, the  
device will not initiate a turn-on sequence and will declare an  
overvoltage fault condition to exist. In this case, the device will  
respond based on the output overvoltage fault response method  
that has been selected. See “Output Overvoltage Protection” on  
page 26 for response options due to an overvoltage condition.  
If a pre-bias voltage lower than the target voltage exists after the  
pre-configured delay period has expired, the target voltage is set  
to match the existing pre-bias voltage and both drivers are  
enabled. The output voltage is then ramped to the final  
regulation value at the ramp rate set by the SS pin.  
Pre-bias protection is not offered for current sharing groups that  
also have tracking enabled.  
Output Overcurrent Protection  
The ZL2008 can protect the power supply from damage if the  
output is shorted to ground or if an overload condition is imposed  
on the output. Once the current limit threshold has been selected  
(see “Current Limit Threshold Selection” on page 21), the user  
may determine the desired course of action in response to the  
fault condition. The following overcurrent protection response  
options are available:  
The actual time the output will take to ramp from the pre-bias  
voltage to the target voltage will vary depending on the pre-bias  
voltage but the total time elapsed from when the delay period  
expires and when the output reaches its target value will match  
the pre-configured ramp time. See Figure 19.  
If a pre-bias voltage higher than the target voltage exists after the  
pre-configured delay period has expired, the target voltage is set  
to match the existing pre-bias voltage and both drivers are  
enabled with a PWM duty cycle that would ideally create the  
pre-bias voltage.  
1. Initiate a shutdown and attempt to restart an infinite number  
of times with a preset delay period between attempts.  
2. Initiate a shutdown and attempt to restart a preset number of  
times with a preset delay period between attempts.  
Once the pre-configured soft-start ramp period has expired, the  
PG pin will be asserted (assuming the pre-bias voltage is not  
higher than the overvoltage limit). The PWM will then adjust its  
3. Continue operating for a given delay period, followed by  
shutdown if the fault still exists.  
FN6859.4  
April 29, 2011  
26  
ZL2008  
4. Continue operating through the fault (this could result in  
permanent damage to the power supply).  
The default response from a temperature fault is an immediate  
shutdown of the device. The device will continuously check for  
the fault condition, and once the fault has cleared the ZL2008  
will be re-enabled.  
5. Initiate an immediate shutdown.  
The default response from an overcurrent fault is an immediate  
shutdown of the device. The device will continuously check for  
the presence of the fault condition, and if the fault condition no  
longer exists the device will be re-enabled.  
Please refer to Application Note AN2033 for details on how to  
select specific temperature fault response options via  
I2C/SMBus.  
Please refer to Application Note AN2033 for details on how to  
select specific overcurrent fault response options via I2C/SMBus.  
Voltage Tracking  
Numerous high performance systems place stringent demands  
on the order in which the power supply voltages are turned on.  
This is particularly true when powering FPGAs, ASICs, and other  
advanced processor devices that require multiple supply voltages  
to power a single die. In most cases, the I/O interface operates at  
a higher voltage than the core and therefore the core supply  
voltage must not exceed the I/O supply voltage according to the  
manufacturers' specifications.  
Thermal Overload Protection  
The ZL2008 includes an on-chip thermal sensor that  
continuously measures the internal temperature of the die and  
shuts down the device when the temperature exceeds the preset  
limit. The default temperature limit is set to +125°C in the  
factory, but the user may set the limit to a different value if  
desired. See Application Note AN2033 for details. Note that  
setting a higher thermal limit via the I2C/SMBus interface may  
result in permanent damage to the device. Once the device has  
been disabled due to an internal temperature fault, the user may  
select one of several fault response options as follows:  
Voltage tracking protects these sensitive ICs by limiting the  
differential voltage between multiple power supplies during the  
power-up and power down sequence. The ZL2008 integrates a  
lossless tracking scheme that allows its output to track a voltage  
that is applied to the VTRK pin with no external components  
required. The VTRK pin is an analog input that, when tracking  
mode is enabled, configures the voltage applied to the VTRK pin  
to act as a reference for the device’s output regulation.  
1. Initiate a shutdown and attempt to restart an infinite number  
of times with a preset delay period between attempts.  
2. Initiate a shutdown and attempt to restart a preset number of  
times with a preset delay period between attempts.  
The ZL2008 offers two mode of tracking as follows:  
3. Continue operating for a given delay period, followed by  
shutdown if the fault still exists.  
1. Coincident. This mode configures the ZL2008 to ramp its  
output voltage at the same rate as the voltage applied to the  
VTRK pin.  
4. Continue operating through the fault (this could result in  
permanent damage to the power supply).  
2. Ratiometric. This mode configures the ZL2008 to ramp its  
output voltage at a rate that is a percentage of the voltage  
applied to the VTRK pin. The default setting is 50%, but an  
external resistor string may be used to configure a different  
tracking ratio.  
5. Initiate an immediate shutdown.  
If the user has configured the device to restart, the device will  
wait the preset delay period (if configured to do so) and will then  
check the device temperature. If the temperature has dropped  
below a threshold that is approx +15°C lower than the selected  
temperature fault limit, the device will attempt to re-start. If the  
temperature still exceeds the fault limit the device will wait the  
preset delay period and retry again.  
Figure 20 illustrates the typical connection and the two tracking  
modes.  
The master ZL2008 device in a tracking group is defined as the  
device that has the highest target output voltage within the group.  
This master device will control the ramp rate of all tracking devices  
and is not configured for tracking mode. A delay of at least 10ms  
must be configured into the master device using the SS pin, and the  
user may also configure a specific ramp rate using the SS pin. Any  
device that is configured for tracking mode will ignore its soft-start  
delay and ramp time settings (SS pin) and its output will take on the  
turn-on/turn-off characteristics of the reference voltage present at  
the VTRK pin. All of the ENABLE pins in the tracking group must be  
connected together and driven by a single logic source. Tracking is  
configured via the I2C/SMBus interface by using the TRACK_CONFIG  
PMBus command. Please refer to Application Note AN2033 for  
more information on configuring tracking mode using PMBus.  
FN6859.4  
April 29, 2011  
27  
ZL2008  
TABLE 21. Tracking Resistor Settings  
Upper Track Limit  
RSS  
(kΩ)  
Track Ratio  
(%)  
Ramp-up/down Behavior  
Output does not decrease before PG  
Output always follows VTRK  
90.9  
100  
110  
121  
133  
147  
162  
178  
Limited by target  
Limited by VTRK  
Limited by target  
Limited by VTRK  
100  
50  
Output does not decrease before PG  
Output always follows VTRK  
Output does not decrease before PG  
Output always follows VTRK  
Output does not decrease before PG  
Output always follows VTRK  
It should be noted that current sharing groups that are also  
configured to track another voltage do not offer pre-bias  
protection; a minimum load should therefore be enforced to  
avoid the output voltage from being held up by an outside force.  
Additionally, a device set up for tracking must have both  
Alternate Ramp Control and Precise Ramp-Up Delay disabled.  
Voltage Margining  
The ZL2008 offers a simple means to vary its output higher or  
lower than its nominal voltage setting in order to determine  
whether the load device is capable of operating over its specified  
supply voltage range. The MGN command is set by driving the  
MGN pin or through the I2C/SMBus interface. The MGN pin is a  
tri-level input that is continuously monitored and can be driven  
directly by a processor I/O pin or other logic-level output.  
VIN  
GH  
ZL SW  
GL  
Q1  
Q2  
The ZL2008’s output will be forced higher than its nominal set  
point when the MGN command is set HIGH, and the output will  
be forced lower than its nominal set point when the MGN  
command is set LOW. Default margin limits of VNOM ±5% are  
pre-loaded in the factory, but the margin limits can be modified  
through the I2C/SMBus interface to as high as VNOM + 10% or as  
low as 0V, where VNOM is the nominal output voltage set point  
determined by the V0 and V1 pins. A safety feature prevents the  
user from configuring the output voltage to exceed VNOM + 10%  
under any conditions.  
VOUT  
L1  
C1  
VTRK  
VOUT  
VTRK  
The margin limits and the MGN command can both be set  
individually through the I2C/SMBus interface. Additionally, the  
transition rate between the nominal output voltage and either  
margin limit can be configured through the I2C interface. Please  
refer to Application Note AN2033 for detailed instructions on  
modifying the margining configurations.  
VOUT  
Time  
2
I C/SMBus Communications  
Coincident  
The ZL2008 provides an I2C/SMBus digital interface that  
enables the user to configure all aspects of the device operation  
as well as monitor the input and output parameters. The ZL2008  
can be used with any standard 2-wire I2C host device. In addition,  
the device is compatible with SMBus version 2.0 and includes an  
SALRT line to help mitigate bandwidth limitations related to  
continuous fault monitoring. Pull-up resistors are required on the  
I2C/SMBus as specified in the SMBus 2.0 specification. The  
ZL2008 accepts most standard PMBus commands. When  
controlling the device with PMBus commands, it is  
VOUT  
VTRK  
VOUT  
recommended that the enable pin is tied to SGND.  
Time  
Ratiometric  
FIGURE 20. Tracking Modes  
FN6859.4  
April 29, 2011  
28  
ZL2008  
2
If more than 25 unique device addresses are required or if other  
I C/SMBus Device Address Selection  
SMBus address values are desired, both the SA0 and SA1 pins  
can be configured with a resistor to SGND according to  
Equation 34 and Table 24.  
When communicating with multiple SMBus devices using the  
I2C/SMBus interface, each device must have its own unique  
address so the host can distinguish between the devices. The  
device address can be set according to the pin-strap options  
listed in Table 22. Address values are right-justified.  
SMBus address = 25 x (SA1 index) + (SA0 index) (in decimal)  
(EQ. 34)  
TABLE 22. SMBus Address Pin-strap Selection  
SA0  
TABLE 24. SMBus Address Index Values  
RSA  
LOW  
0x20  
0x23  
0x26  
OPEN  
0x21  
0x24  
0x27  
HIGH  
0x22  
(kΩ)  
SA0 or SA1 Index  
LOW  
OPEN  
HIGH  
10  
0
1
SA1  
0x25  
11  
Reserved  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
2
3
If additional device addresses are required, a resistor can be  
connected to the SA0 pin according to Table 23 to provide up to  
25 unique device addresses. In this case, the SA1 pin should be  
tied to SGND.  
4
5
6
TABLE 23. SMBus Address Resistor Selection  
7
RSA0  
(kΩ)  
SMBus  
Address  
8
10  
0x00  
0x01  
0x02  
0x03  
0x04  
0x05  
0x06  
0x07  
0x08  
0x09  
0x0A  
0x0B  
0x0C  
0x0D  
0x0E  
0x0F  
0x10  
0x11  
0x12  
0x13  
0x14  
0x15  
0x16  
0x17  
0x18  
9
11  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
82.5  
90.9  
100  
Using this method, the user can theoretically configure up to 625  
unique SMBus addresses, however the SMBus is inherently  
limited to 128 devices so attempting to configure an address  
higher than 128 (0x80) will cause the device address to repeat  
(i.e., attempting to configure a device address of 129 (0x81)  
would result in a device address of 1). Therefore, the user should  
use index values 0-4 on the SA1 pin and the full range of index  
values on the SA0 pin, which will provide 125 device address  
combinations.  
82.5  
90.9  
100  
Note that the SMBus address 0x4B is reserved for device test and  
cannot be used in the system.  
FN6859.4  
April 29, 2011  
29  
ZL2008  
TABLE 26. Phase Offset Resistor Settings  
Digital-DC Bus  
The Digital-DC Communications (DDC) bus is used to  
communicate between Zilker Labs Digital-DC devices. This  
RCFG2  
(kΩ)  
Phase Offset  
(°)  
Current  
Sense  
dedicated bus provides the communication channel between  
devices for features such as sequencing, fault spreading, and  
current sharing. The DDC pin on all Digital-DC devices in an  
application should be connected together. A pull-up resistor is  
required on the DDC bus in order to guarantee the rise time as  
follows:  
10  
22.5  
45  
11  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
67.5  
90  
112.5  
135  
Rise time = RPU * CLOAD 1µs  
(EQ. 35)  
where RPU is the DDC bus pull-up resistance and CLOAD is the bus  
loading. The pull-up resistor may be tied to VR or to an external  
3.3V or 5V supply as long as this voltage is present prior to or  
during device power-up. As rules of thumb, each device  
connected to the DDC bus presents approx 10pF of capacitive  
loading, and each inch of FR4 PCB trace introduces approx 2pF.  
The ideal design will use a central pull-up resistor that is well-  
matched to the total load capacitance. In power module  
applications, the user should consider whether to place the pull-  
up resistor on the module or on the PCB of the end application.  
The minimum pull-up resistance should be limited to a value that  
enables any device to assert the bus to a voltage that will ensure  
a logic 0 (typically 0.8V at the device monitoring point) given the  
pull-up voltage (5V if tied to VR) and the pull-down current  
capability of the ZL2008 (nominally 4mA).  
157.5  
180  
DCR  
202.5  
225  
247.5  
270  
292.5  
315  
337.5  
22.5  
45  
Phase Spreading  
When multiple point of load converters share a common DC  
input supply, it is desirable to adjust the clock phase offset of  
each device such that not all devices start to switch  
simultaneously. Setting each converter to start its switching cycle  
at a different point in time can dramatically reduce input  
capacitance requirements and efficiency losses. Since the peak  
current drawn from the input supply is effectively spread out over  
a period of time, the peak current drawn at any given moment is  
reduced and the power losses proportional to the IRMS2 are  
reduced dramatically.  
67.5  
90  
112.5  
135  
157.5  
180  
82.5  
90.9  
100  
110  
121  
133  
147  
162  
RDS  
202.5  
225  
247.5  
270  
In order to enable phase spreading, all converters must be  
synchronized to the same switching clock. The CFG1 pin is used  
to set the configuration of the SYNC pin for each device as  
described in section “Switching Frequency and PLLon page 17 .  
292.5  
315  
The phase offset of each single-phase device may be set to any  
value between 0° and 337.5° in 22.5° increments using the  
CFG2 pin as shown in Tables 25 and 26.  
337.5  
The phase offset of (multi-phase) current sharing devices is  
automatically set to a value between 0° and 337.5° in 22.5°  
increments as described in “Active Current Sharing” on page 31.  
TABLE 25. Phase Offset Pin-strap Settings  
Phase Offset  
RCFG2  
LOW  
(°)  
90  
0
Current Sense  
DCR  
The phase offset of each device may also be set to any value  
between 0° and 360° in 22.5° increments via the I2C/SMBus  
interface. Refer to Application Note AN2033 for further details.  
OPEN  
HIGH  
180  
FN6859.4  
April 29, 2011  
30  
ZL2008  
Output Sequencing  
Fault Spreading  
A group of Digital-DC devices may be configured to power up in a  
predetermined sequence. This feature is especially useful when  
powering advanced processors, FPGAs, and ASICs that require  
one supply to reach its operating voltage prior to another supply  
reaching its operating voltage in order to avoid latch-up from  
occurring. Multi-device sequencing can be achieved by  
Digital DC devices can be configured to broadcast a fault event  
over the DDC bus to the other devices in the group. When a non-  
destructive fault occurs and the device is configured to shut down  
on a fault, the device will shut down and broadcast the fault  
event over the DDC bus. The other devices on the DDC bus will  
shut down together or in sequencing order, if configured to do so,  
and will attempt to re-start in their prescribed order if configured  
to do so.  
configuring each device through the I2C/SMBus interface or by  
using Zilker Labs patented autonomous sequencing mode.  
Autonomous sequencing mode configures sequencing by using  
events transmitted between devices over the DDC bus. This mode  
is not available on current sharing rails.  
Temperature Monitoring Using the XTEMP Pin  
The ZL2008 supports measurement of an external device  
temperature using either a thermal diode integrated in a  
processor, FPGA or ASIC, or using a discrete diode-connected  
2N3904 NPN transistor. Figure 21 illustrates the typical  
connections required.  
The sequencing order is determined using each device’s SMBus  
address. Using autonomous sequencing mode (configured using  
the CFG1 pin), the devices must be assigned sequential SMBus  
addresses with no missing addresses in the chain. This mode will  
also constrain each device to have a phase offset according to its  
SMBus address as described “Phase Spreading” on page 30.  
XTEMP  
100 pF  
2N3904  
ZL  
The sequencing group will turn on in order starting with the  
device with the lowest SMBus address and will continue through  
to turn on each device in the address chain until all devices  
connected have been turned on. When turning off, the device  
with the highest SMBus address will turn off first followed in  
reverse order by the other devices in the group.  
SGND  
Discrete NPN  
µP  
XTEMP  
FPGA  
DSP  
ASIC  
Sequencing is configured by connecting a resistor from the CFG1  
pin to ground as described in Table 27. The CFG1 pin is also used  
to set the configuration of the SYNC pin as well as to determine  
the sequencing method and order. Please refer to “Switching  
Frequency and PLLon page 17 for more details on the operating  
parameters of the SYNC pin.  
100pF  
ZL  
SGND  
Embedded Thermal Diode  
FIGURE 21. External Temperature Monitoring  
Multiple device sequencing may also be achieved by issuing  
PMBus commands to assign the preceding device in the  
sequencing chain as well as the device that will follow in the  
sequencing chain. This method places fewer restrictions on  
SMBus address (no need of sequential address) and also allows  
the user to assign any phase offset to any device irrespective of  
its SMBus device address.  
Active Current Sharing  
Paralleling multiple ZL2008 devices can be used to increase the  
output current capability of a single power rail. By connecting the  
DDC pins of each device together and configuring the devices as  
a current sharing rail, the units will share the current equally  
within a few percent.  
The Enable pins of all devices in a sequencing group must be tied  
together and driven high to initiate a sequenced turn-on of the  
group. Enable must be driven low to initiate a sequenced turnoff  
of the group.  
Figure 22 illustrates a typical connection for three devices.  
The ZL2008 uses a low-bandwidth, first-order digital current  
sharing technique to balance the unequal device output loading  
by aligning the load lines of member devices to a reference  
device.  
Refer to Application Note AN2033 for details on sequencing via  
the I2C/SMBus interface.  
Droop resistance is used to add artificial resistance in the output  
voltage path to control the slope of the load line curve,  
calibrating out the physical parasitic mismatches due to power  
train components and PCB layout.  
FN6859.4  
April 29, 2011  
31  
ZL2008  
TABLE 27. Sequencing Pin-strap and Resistor Settings  
Sequencing Configuration  
NLR Timeout and  
Blanking  
RCFG1  
LOW  
SYNC Pin Config  
Input  
OPEN  
Auto detect  
Output  
Sequencing is disabled.  
Sequencing is disabled.  
1 and 4  
HIGH  
10kΩ  
Input  
11kΩ  
Auto detect  
Output  
12.1kΩ  
14.7kΩ  
16.2kΩ  
17.8kΩ  
21.5kΩ  
23.7kΩ  
26.1kΩ  
31.6kΩ  
34.8kΩ  
38.3kΩ  
46.4kΩ  
51.1kΩ  
56.2kΩ  
68.1kΩ  
75kΩ  
Input  
The ZL2008 is configured as the first device in a nested sequencing group. Turn on  
order is based on the device SMBus address.  
Auto detect  
Output  
1 and 4  
Input  
The ZL2008 is configured as a last device in a nested sequencing group. Turn on order  
is based on the device SMBus address.  
Auto detect  
Output  
Input  
The ZL2008 is configured as the middle device in a nested sequencing group. Turn on  
order is based on the device SMBus address.  
Auto detect  
Output  
Input  
Auto detect  
Output  
Sequencing is disabled.  
Input  
The ZL2008 is configured as the first device in a nested sequencing group. Turn on  
order is based on the device SMBus address.  
Auto detect  
Output  
82.5kΩ  
100kΩ  
110kΩ  
121kΩ  
147kΩ  
162kΩ  
178kΩ  
2 and 8  
Input  
The ZL2008 is configured as a last device in a nested sequencing group. Turn on order  
is based on the device SMBus address.  
Auto detect  
Output  
Input  
The ZL2008 is configured as the middle device in a nested sequencing group. Turn on  
order is based on the device SMBus address.  
Auto detect  
Output  
FN6859.4  
April 29, 2011  
32  
ZL2008  
The ISHARE_CONFIG command is used to configure the device  
VIN  
3.3V - 5V  
for active current sharing. The default setting is a stand-alone  
non-current sharing device. A current sharing rail can be part of a  
system sequencing group.  
CIN  
ZL  
ZL  
ZL  
DDC  
DDC  
DDC  
For fault configuration, the current share rail is configured in a  
quasi-redundant mode. In this mode, when a member device  
fails, the remaining members will continue to operate and  
attempt to maintain regulation. Of the remaining devices, the  
device with the lowest member position will become the  
reference. If fault spreading is enabled, the current share rail  
failure is not broadcast until the entire current share rail fails.  
COUT  
CIN  
VOUT  
COUT  
Up to eight (8) devices can be configured in a given current  
sharing rail.  
CIN  
TABLE 28. Current Share Position Settings  
RCFG2  
COUT  
(kΩ)  
10  
Current Share Position  
Current Sense  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
FIGURE 22. Current Sharing Group  
11  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
DCR  
VREFERENCE  
-R  
VMEMBER  
-R  
RDS  
IMEMBER  
IOUT  
IREFERENCE  
FIGURE 23. Active Current Sharing  
Upon system start-up, the device with the lowest member  
position as selected in ISHARE_CONFIG is defined as the  
reference device. The remaining devices are members. The  
reference device broadcasts its current over the DDC bus. The  
members use the reference current information to trim their  
voltages (VMEMBER) to balance the current loading of each device  
in the system.  
82.5  
TABLE 29. Current Share Pin-strap Settings  
Current Share # of  
CFG0 Pin  
NLR  
1.5%  
Members  
0
Current Sharing  
Disabled  
Figure 23 shows that, for load lines with identical slopes, the  
member voltage is increased towards the reference voltage  
which closes the gap between the inductor currents.  
LOW  
OPEN  
HIGH  
Disabled  
2%  
The relation between reference and member current and voltage  
is given by Equation 36:  
(EQ. 36)  
VMEMBER = VOUT + R ×  
(
IREFERENCE IMEMBER  
)
where R is the value of the droop resistance.  
FN6859.4  
April 29, 2011  
33  
ZL2008  
The phase offset of a current sharing group is automatically set  
to a value between 0° and 337.5° in 22.5° increments as  
follows:  
TABLE 30. Current Share Resistor Settings  
Current Share # of  
RCFG0  
(kΩ)  
NLR  
Members  
Current Sharing  
Phase Offset = (SMBus Address[4:0] – Current Share  
Position) * 22.5°  
10  
2
3
4
5
6
7
8
0
2
3
4
5
6
7
8
0
2
3
4
5
6
7
8
0
2
3
4
5
6
7
8
(EQ. 37)  
11  
The phase of the individual members in a group are spread  
evenly from the phase offset of the group.  
12.1  
13.3  
14.7  
16.2  
17.8  
19.6  
21.5  
23.7  
26.1  
28.7  
31.6  
34.8  
38.3  
42.2  
46.4  
51.1  
56.2  
61.9  
68.1  
75  
Disabled  
Enabled  
Please refer to Application Note AN2034 for additional details on  
current sharing.  
Phase Adding/Dropping  
The ZL2008 allows multiple power converters to be connected in  
parallel to supply higher load currents than can be addressed  
using a single-phase design. In doing so, the power converter is  
optimized at a load current range that requires all phases to be  
operational. During periods of light loading, it may be beneficial  
to disable one or more phases in order to eliminate the current  
drain and switching losses associated with those phases,  
resulting in higher efficiency.  
Disabled  
Enabled  
3%  
The ZL2008 offers the ability to add and drop phases using a the  
phase enable pin or a PMBus command in response to an  
observed load current change. All phases in a current share rail  
are considered active prior to the current sharing rail ramp to  
power-good.  
Disabled  
Enabled  
Phases can be dropped after power-good is reached. The phase  
enable pin can be used to drop and add phases:  
• Set PH_EN = 0 to drop a phase  
• Set PH_EN = 1 to add a phase  
2%  
The time to detect a change of state of the phase enable pin is  
between 0ms and 3ms (max).  
Any member of the current sharing rail can be dropped. If the  
reference device is dropped, the remaining active device with the  
lowest member position will become the new reference.  
82.5  
90.9  
100  
110  
121  
133  
147  
Disabled  
Enabled  
Additionally, any change to the number of members of a current  
sharing rail will precipitate autonomous phase distribution within  
the rail where all active phases realign their phase position  
based on their order within the number of active members.  
1.5%  
If the members of a current sharing rail are forced to shut down  
due to an observed fault, all members of the rail will attempt to  
re-start simultaneously after the fault has cleared.  
162  
178  
For single phase operation, that is, not current sharing, the  
PH_EN pin is ignored and can be left open.  
FN6859.4  
April 29, 2011  
34  
ZL2008  
2
may be observed if the device’s VDD supply drops below 3.0V  
during this process.  
Monitoring via I C/SMBus  
A system controller can monitor a wide variety of different  
ZL2008 system parameters through the I2C/SMBus interface.  
The device can monitor for fault conditions by monitoring the  
SALRT pin, which will be pulled low when any number of  
pre-configured fault conditions occur.  
TABLE 31. SNAPSHOT_CONTROL Command  
Data Value  
1
Description  
Copies current SNAPSHOT values from Flash memory to  
RAM for immediate access using SNAPSHOT command.  
The device can also be monitored continuously for any number of  
power conversion parameters including but not limited to the  
following:  
2
Writes current SNAPSHOT values to Flash memory. Only  
available when device is disabled.  
• Input voltage/Output voltage  
• Output current  
In the event that the device experiences a fault and power is lost,  
the user can extract the last SNAPSHOT parameters stored  
during the fault by writing a 1 to SNAPSHOT_CONTROL (transfers  
data from Flash memory to RAM) and then issuing a SNAPSHOT  
command (reads data from RAM via SMBus).  
• Internal and external temperature  
• Switching frequency  
• Duty cycle  
Non-Volatile Memory and Device Security  
Features  
The ZL2008 has internal non-volatile memory where user  
configurations are stored. Integrated security measures ensure  
that the user can only restore the device to a level that has been  
made available to them. Refer to “Start-up Procedure” on  
page 15 for details on how the device loads stored values from  
internal memory during start-up.  
The PMBus Host should respond to SALRT as follows:  
1. ZL device pulls SALRT Low  
2. PMBus Host detects that SALRT is now low, performs  
transmission with Alert Response Address to find which ZL  
device is pulling SALRT low.  
3. PMBus Host talks to the ZL device that has pulled SALRT low.  
The actions that the host performs are up to the System  
Designer.  
During the initialization process, the ZL2008 checks for stored  
values contained in its internal non-volatile memory. The ZL2008  
offers two internal memory storage units that are accessible by  
the user as follows:  
If multiple devices are faulting, SALRT will still be low after doing  
the above steps and will require transmission with the Alert  
Response Address repeatedly until all faults are cleared.  
1. Default Store: A power supply module manufacturer may  
want to protect the module from damage by preventing the  
user from being able to modify certain values that are related  
to the physical construction of the module. In this case, the  
module manufacturer would use the Default Store and would  
allow the user to restore the device to its default setting but  
would restrict the user from restoring the device to the factory  
settings.  
Please refer to Application Note AN2033 for details on how to  
monitor specific parameters via the I2C/SMBus interface.  
Snapshot Parameter Capture  
The ZL2008 offers a special feature that enables the user to  
capture parametric data during normal operation or following a  
fault. The Snapshot functionality is enabled by setting bit 1 of  
MISC_CONFIG to 1.  
2. User Store: The manufacturer of a piece of equipment may  
want to provide the ability to modify certain power supply  
settings while still protecting the equipment from modifying  
values that can lead to a system level fault. The equipment  
manufacturer would use the User Store to achieve this goal.  
See AN2033 for details on using the Snapshot in addition to the  
parameters supported. The Snapshot feature enables the user to  
read status and parameters via a block read transfer through the  
SMBus. This can be done during normal operation, although it  
should be noted that reading the 22 bytes will occupy the SMBus  
for some time.  
Please refer to Application Note AN2033 for details on how to set  
specific security measures via the I2C/SMBus interface.  
The SNAPSHOT_CONTROL command enables the user to store  
the snapshot parameters to Flash memory in response to a  
pending fault as well as to read the stored data from Flash  
memory after a fault has occurred. Table 31 describes the usage  
of this command. Automatic writes to Flash memory following a  
fault are triggered when any fault threshold level is exceeded,  
provided that the specific fault’s response is to shut down  
(writing to Flash memory is not allowed if the device is configured  
to re-try following the specific fault condition). It should also be  
noted that the device’s VDD voltage must be maintained during  
the time when the device is writing the data to Flash memory; a  
process that requires between 700µs to 1400µs depending on  
whether the data is set up for a block write. Undesirable results  
Pin-strap Current Sharing  
Configuration  
A 3-phase current sharing group example is shown in Figure 24.  
Each ZL2008 device in the group is connected to the same DDC  
bus and SMBus. Also, the enable pins are connected together to  
allow all devices in the current sharing group to enable  
simultaneously.  
The device with the lowest position number becomes the  
reference device. The reference device provides the load current  
information to each member device. If the reference device is  
FN6859.4  
April 29, 2011  
35  
ZL2008  
dropped or faults then the device with the next lowest position  
number will become the new reference device.  
SYNC Clock (CFG1 Pin)  
Typically the reference device sources the SYNC clock. However,  
any device internal or external to the current sharing group can  
source the SYNC clock. If the reference device is sourcing the  
SYNC clock, then resistor pin-strap the CFG1 pin to configure the  
SYNC pin as an output. Otherwise configure the reference  
device’s SYNC pin as an input. For member devices, resistor  
pin-strap the CFG1 pin to configure the SYNC pin as an input.  
3.3V  
VCC  
R
R
DEV_1  
0x20  
Rout Cout  
REF.  
POS_0  
PH_1  
DDC  
SDA  
SCL  
Soft-start (SS Pin)  
SYNC_Out  
SYNC  
VCC  
Current sharing groups require proper synchronization prior to  
ramp events. Resistor pin-strap the SS pin to set the following  
parameters:  
DEV_2  
0x21  
MEM_1  
a. Delay Time – The reference device’s soft-start delay time  
must be at least 10ms greater than any member device to  
ramp up/down current sharing. The reference device requires  
this additional time to coordinate a synchronization signal to  
all member devices.  
_
POS_1  
PH_2  
SYNC_In  
VCC  
DEV_3  
0x22  
b. Ramp Time – A minimum soft-start ramp time of 5ms is  
required for both reference and member devices to ramp  
up/down current sharing.  
MEM_2  
POS_3  
POS_2  
PH_3  
Phase Enable (PH_EN Pin)  
SYNC_In  
Phase enable is used to dynamically add or drop a current  
sharing phase during operation. Set the PH_EN pin high to  
enable a phase and low to disable a phase (open is an invalid  
state). The PH_EN pin replaces the PHASE_CONTROL command.  
FIGURE 24. 3-phase Current Sharing Group  
SMBus Address (SA0, SA1 Pins)  
For proper operation, the pin must be externally driven high or  
low without switching glitches. Also, ensure phase enable is high  
for the reference and member devices of a current sharing group  
prior to ramp-up.  
Assign sequential SMBus addresses to each device in the current  
sharing group. If other non-current sharing devices are connected  
to the same SMBus then assign addresses to these devices that  
are before or after the current sharing group.  
MFR_CONFIG Command  
Current Share Pin-Straps (CFG0, CFG2 Pins)  
Application specific values are set by the MFR_CONFIG  
command. The following parameters must be set to properly  
configure current sharing.  
Resistor pin-strap the CFG0 pin to set the following parameters:  
a. Current Share # of Members – Number of devices or phases  
in a current sharing group (2 minimum and 8 maximum).  
a. Current Sense Blanking Delay (bits 15:11) – The current  
sense delay parameter controls the blanking time when no  
current measurement is taken. This allows the filtering of  
noise from the current measurement circuit when the FETs  
b. Current Share Control – Current sharing is automatically  
enabled when the number of members is 2 (and disabled  
when members is = 0).  
Resistor pin-strap the CFG2 pin to set the current share position:  
are switching. The actual value selected depends on fSW  
,
sensing method and ring-out duration. The same delay is  
used for both reference and member devices.  
c. Current Share Position – Sequential numbering from 0 to 7  
(max) of N number of members starting with the reference  
device in position 0 and ending with the last member device  
in position N-1.  
b. Current Sense Control (bits 5:4) – Three modes of current  
sensing are available depending on duty cycle and switching  
frequency as listed in Table 33 (also refer to “Current Limit  
Threshold Selection” on page 21). The same sensing is used  
for both reference and member devices.  
For the 3-phase group the parameters for each device are shown  
in Table 32.  
TABLE 32. Current Share Parameters  
Device  
SMBus Address # of Members Position  
Control  
Enabled  
Enabled  
Enabled  
Reference  
Member_1  
Member_2  
0x20  
0x21  
0x22  
3
3
3
0
1
2
FN6859.4  
April 29, 2011  
36  
ZL2008  
Note, the following parameters are automatically set when  
current sharing is enabled.  
VOUT_DROOP Command  
The droop or load-line resistance is used as part of the current  
sharing algorithm. When current sharing is enabled,  
VOUT_DROOP is automatically set to a value of 0xBA80  
(1.25mΩ). The same droop value is used for both reference and  
member devices.  
Alternate Ramp Control (bit 2) – Automatically set to “1”  
(enabled) for both reference and member devices when current  
sharing is enabled.  
SYNC Pin Output Control (bit 0) – Automatically set to push-pull  
for a SYNC clock output and open-drain for a SYNC clock input.  
Current Sharing Example  
TABLE 33. Current Sense Options  
Example pin-strap resistor values for the current sharing group in  
Figure 24 are shown in Table 34. Sequential SMBus addresses  
are used with the reference device at the lowest address. The  
reference device outputs the SYNC clock to the member devices  
SYNC clock input. The devices are configured for 3-phase current  
sharing with all phases enabled. The reference device soft-start  
ramp time is at least 5ms and soft-start delay time is at least  
10ms greater than the member devices for proper  
Current Sense Configuration  
Usage  
Ground referenced, down slope  
(RDS(ON) sensing)  
Low duty cycle and low fSW  
Vout referenced, down slope  
(Inductor DCR sensing)  
Low duty cycle and high fSW  
High duty cycle  
Vout referenced, up slope  
(Inductor DCR sensing)  
synchronization and output voltage ramp.  
TABLE 34. Pin-Strap Current Sharing Resistor Values  
Pin  
Reference  
Low, Low  
Member_1  
Open, Low  
Member_2  
Description  
SA0, SA1  
High, Low  
SMBus Address = 0x20 for Reference  
SMBus Address = 0x21 for Member_1  
SMBus Address = 0x22 for Member_2  
CFG0  
CFG1  
CFG2  
23.7kΩ  
High  
23.7kΩ  
Low  
23.7kΩ  
Low  
Current Share # of Members = 3  
Current Share Control = Enabled  
SYNC = Output for Reference  
SYNC = Input for Member_1 and Member_2  
42.2kΩ  
46.4kΩ  
51.1kΩ  
Current Share Position = 0 for Reference  
Current Share Position = 1 for Member_1  
Current Share Position = 2 for Member_2  
SS  
31.6kΩ  
14.7kΩ  
14.7kΩ  
Delay = 15ms, Ramp = 5ms for Reference  
Delay = 5ms, Ramp = 5ms for Member_1  
Delay = 5ms, Ramp = 5ms for Member_2  
PH_EN  
High  
High  
High  
All Phases Enabled  
Reference  
Member_1  
Member_2  
Position = 2  
SMBus = 0x22  
SYNC = Input  
Delay = 5 ms  
Ramp = 5 ms  
Position = 0  
SMBus = 0x20  
SYNC = Output  
Delay = 15 ms  
Ramp = 5 ms  
Position = 1  
SMBus = 0x21  
SYNC = Input  
Delay = 5 ms  
Ramp = 5 ms  
FIGURE 25.  
FN6859.4  
April 29, 2011  
37  
ZL2008  
Ordering Information  
PART NUMBER  
(Notes 19, 20, 21)  
TEMP RANGE  
(°C)  
PKG.  
DWG. #  
PART MARKING  
2008  
PACKAGE  
36 Ld 6mmx6mm QFN  
36 Ld 6mmx6mm QFN  
ZL2008ALBFT  
ZL2008ALBFT1  
NOTES:  
-40 to +85  
-40 to +85  
L36.6x6A  
L36.6x6A  
2008  
19. Please refer to TB347 for details on reel specifications.  
20. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte  
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-  
free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.  
21. For Moisture Sensitivity Level (MSL), please see device information page for ZL2008. For more information on MSL please see techbrief TB363.  
Related Tools and Documentation  
The following application support documents and tools are  
available to help simplify your design.  
Item  
Description  
AN2010  
AN2032  
AN2033  
AN2034  
AN2035  
Application Note: Thermal and Layout Guidelines  
Application Note: NLR Configuration  
Application Note: PMBus Command Set  
Application Note: Current Sharing  
Application Note: Compensation Using CompZL  
FN6859.4  
April 29, 2011  
38  
ZL2008  
Revision History  
Rev. #  
Description  
Date  
1.0  
Initial release  
January 2009  
FN6859.0 Assigned file number FN6859 to datasheet as this will be the first release with an Intersil file number. Replaced header February 2009  
and footer with Intersil header and footer. Updated disclaimer information to read “Intersil and it’s subsidiaries including  
Zilker Labs, Inc.” No changes to datasheet content  
FN6859.1 Updated to new format. Updates include:  
a) Putting Abs Max, Recommended Operating Conditions and Electrical Specs tables into Intersil format  
October 2009  
- Adding Pb-free reflow link to Thermal info  
- Adding Intersil's caution statement, per legal  
b) Put Ordering Info table into Intersil format  
- Adding Moisture Sensitivity Level note, TB347 tape and reel spec note and Pb-free note  
lead finish).  
(corresponding to  
c) Updated sales disclaimer on last page to Intersil's verbiage  
d) Replaced Zilker POD with Intersil equivalent POD (L36.6x6A)  
e) Updated graphics to Intersil standards (font change)  
f) Updated cross references to tables (since table #s were removed from Electrical Specs, Abs Max, Recommended  
Operating Conditions and Pin Descriptions tables)  
g) Updated cross references to figures (since figure #s was removed from Pinout)  
h) Added equation #s to all equations  
i) Added Intersil standard over temp notes to Electrical Specs table as follows:  
- Added Note 14: "Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.  
Temperature limits established by characterization and are not production tested." to MIN MAX columns of Electrical  
Specs table.  
-Added "Boldface limits apply over the operating temperature range, -40°C to +85°C" to common conditions of  
Electrical Specs table. Bolded all MIN and MAX specs in table.  
“Absolute Maximum Ratings” on page 4:  
Removed “MOSFET Drive Reference for VR Pin……120mA”. Removed “2.5V Logic Reference for V25 Pin ……120mA”  
“Electrical Specifications” table, page 4 to page 6:  
Changed Max for IDDS Shutdown Current from 8mA to 9mA.  
Changed conditions for “Vr Reference Output Voltage” from <50mA to <20mA  
Changed conditions for “V25 Reference Output Voltage” from <50mA to <20mA  
Added the following sentence to Note 8: “Current Share member minimum delay is 5ms. Current share reference must  
be 10ms greater than member delay”  
Added Note 15: “Limits established by characterization and are not production tested.” Added Note 15 callout to the  
following parameters:  
Soft start delay duration range for test condt using I2C  
Minimum Sync Pulse Width  
High-side Driver Peak Gate Drive Current (Pull-down)  
High-side Driver Pull-up Resistance  
High-side Driver Pull-down Resistance  
Low-side Driver Pull-up Resistance  
Low-side Driver Pull-down Resistance  
Switching timing (for both conditions)  
VTRK Tracking Ramp Accuracy  
UVLO Delay  
UVLO Hysteresis for I2C/SMBus conditions  
Power Good Delay for I2C/SMBus conditions  
VSEN Undervoltage Threshold for I2C/SMBus conditions  
VSEN Overvoltage Threshold for I2C/SMBus conditions  
VSEN Undervoltage/Overvoltage Fault Response Time for I2C/SMBus conditions  
Current Limit Protection Delay for I2C/SMBus conditions  
Temperature Compensation of Current Limit Protection Threshold for I2C/SMBus conditions  
Thermal Protection Threshold (Junction Temperature) for I2C/SMBus conditions  
FN6859.4  
April 29, 2011  
39  
ZL2008  
Revision History (Continued)  
Rev. #  
Description  
Date  
FN6859.1 Added Note 15: “Nominal capacitance of logic pins is 5pF”. Added Note 15 callouts to Logic Output Low, VOL and Logic  
Output High, VOH parameters.  
October 2009  
Changed “Logic Input Bias Current” parameter to “Logic Input Leakage Current”. Changed Logic Input Leakage Current  
Min from -10µA to -250nA and Max from 10µA to 250nA.  
Removed “MGN Input Bias Current” line from table.  
Changed “Power Good VOUT Low Threshold” parameter to “Power Good VOUT Threshold” and removed “Power Good VOUT  
High Threshold” line from table.  
Page 10:  
Removed 2 paragraphs as follows:  
“The ZL2008 can be configured by simply connecting its pins according to the tables provided in the following sections…  
I2C/SMBus interface using an available computer and the included USB cable.”  
“Application notes and … local Zilker Labs sales office to order an evaluation kit”  
Throughout: Changed all referenced Zilker App note numbers to newly assigned Intersil numbers (e.g. AN33 -> AN2033)  
“Current Limit Threshold Selection” on page 21. In paragraph below Figure 16, changed “The current sensing method can  
be selected via the I2C/SMBus interface.” to “The current sensing method can be selected using the CFG2 pin as shown  
in Tables 26 and 28 or via the I2C/SMBus interface.” In 3rd paragraph below Figure 16, changed “This is to avoid taking  
a reading just after a current load step” to “This is to avoid taking a reading just after a switching transition”. Added “Note  
that IOUT_CAL_GAIN is set to 2mΩ by default.” to end of last paragraph.  
Added “(Voltage seen on 2mΩ)” to Tables 14 and 15 captions on page 21.  
Replaced Table 25. Phase Offset Pin-strap Settings on page 30 (changed “CFG2 Pin” column to “RCFG2” and added  
“Current Sense” column).  
Table 26. Phase Offset Resistor Settings on page 30. Added “Current Sense” column and RCFG2 rows from 42.2kΩ through  
162kΩ and corresponding Phase Offset rows.  
On page 30: 2nd column, 1st paragraph, changed “The phase offset of (multi-phase) current sharing devices is  
automatically set to a value between 0° and 337.5° in 22.5° increments as follows: Phase Offset = SMBus Address[4:0]  
–Current Share Position * 22.5°” to “The phase offset of a current sharing group is automatically set to a value between  
0° and 337.5° in 22.5° increments as follows: Phase Offset = (SMBus Address[4:0] –Current Share Position) * 22.5°”  
Added “The phase of the individual members in a group are spread evenly from the phase offset of the group.”  
Table 28. Current Share Position Settings on page 33. Added “Current Sense” column. Added RCFG2 rows from 42.2kΩ  
through 82.5kΩ and corresponding Current Share Position rows.  
Removed former Table 35. Snapshot Parameters  
“Snapshot Parameter Capture” on page 35. Added “See AN2033 for details on using the Snapshot in addition to the  
parameters supported.” to 2nd paragraph  
On page 4, corrected:  
“Analog Input Voltages for ISENA Pin. . . . . . . . . . . . . . . . . . . . .1.5V to 30V”  
to:  
“Analog Input Voltages for ISENA Pin. . . . . . . . . . . . . . . . . . . .-1.5V to 6.5V”  
On page 21, Table 14, added “DCR VLIM (mV)” column. Renamed “Threshold Voltage” column to “RDS VLIM  
On page 22, Table 15, added “DCR VLIM (mV)” column. Renamed “VLIM” column to “RDS VLIM  
On page 21, in second column, first paragraph, changed “Note that IOUT_CAL_GAIN is set to 2mΩ by default.” to “By  
default, the IOUT_CAL_GAIN is set to 1mΩ for DCR mode and 2mΩ for RDS mode.”  
In Table 14 on page 21, removed “ (Voltage seen on 2mΩ)” from caption  
In Table 15 on page 22, removed “(Voltage seen on 2mΩ)” from caption  
“Power Good” on page 16, changed 2nd sentence from “...if the output is within -10%/+15% of the target voltage.” to “...if November 2009  
the output is within -10% of the target voltage.”  
Replaced last paragraph in “Power Good” section.  
“Fault Spreading” on page 31, added “or in sequencing order” to last sentence.  
Change marketing part number to ZL2008ALBFT to note firmware revision.  
FN6859.4  
April 29, 2011  
40  
ZL2008  
Revision History (Continued)  
Rev. #  
Description  
Date  
FN6859.2 Added “ESD Rating” on page 4. Added Note 1 to “ESD Rating” on page 4  
Added “Latch Up (Tested per JESD78) 100mA” on page 4  
April 2010  
Table 26 “Phase Offset Resistor Settings” on page 30, in third column titled "Current Sense", swapped RDS and DCR so  
DCR is in the top part of the table and RDS in the bottom.  
Added “About Intersil” on page 41  
Corrected Note 2 in “Thermal Information” on page 4 from:  
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech  
Brief TB379 for details.”  
To:  
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct  
attach” features. See Tech Brief TB379.”  
In Table 28 on page 33, in the third column, swapped DCR and RDS so that RDS is on the bottom.  
“Active Current Sharing” on page 31, second paragraph changed from "Figure 21 illustrates a typical ..." to "Figure 22  
illustrates a typical ..."  
On page 36, second column, changed from “Resistor pin-strap the CFG2 pin to set the following parameter:” change this  
to say “Resistor pin-strap the CFG2 pin to set the current share position.”  
FN6859.3 Added following statement to disclaimer on page 42: “This product is subject to a license from Power One, Inc. related to December 2010  
digital power technology as set forth in U.S. Patent No. 7,000,125 and other related patents owned by Power One, Inc.  
These license rights do not extend to stand-alone POL regulators unless a royalty is paid to Power One, Inc.”  
FN6859.4 Updated to new template.  
Removed Electrical specs notes 14 and 15:  
December 2010  
14. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature  
limits established by characterization and are not production tested.  
15. Limits established by characterization and are not production tested.  
and replaced with new Note 14: “Compliance to datasheet limits is assured by one or more methods: production test,  
characterization and/or design.”  
Page 1, 1st sentence, changed “The ZL2008 is a digital DC/DC controller with …” to “ZL20081 is a digital power controller  
with…”  
Page 4, Abs Max Ratings, the entry for Logic I/O pins, changed from "-0.3V to 6.5V" to "-0.3 to 6V"  
Page 29, 2nd column, added sentence “Note that the SMBus address 0x4B is reserved for device test and cannot be used  
in the system.” at the end of column two.  
Add the following lines to the“Recommended Operating Conditions” on page 4:  
Input Voltage  
V
V
IN, Rise Time .. . . . . . . .5ms minimum  
IN Ramp . . . .. . . . . . . .Monotonic  
About Intersil  
Intersil Corporation is a leader in the design and manufacture of high-performance analog, mixed-signal and power management  
semiconductors. The company's products address some of the largest markets within the industrial and infrastructure, personal  
computing and high-end consumer markets. For more information about Intersil, visit our website at www.intersil.com.  
For the most updated datasheet, application notes, related documentation and related parts, please see the respective product  
information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting  
www.intersil.com/en/support/ask-an-expert.html. Reliability reports are also available from our website at  
http://www.intersil.com/en/support/qualandreliability.html#reliability  
For additional products, see www.intersil.com/product_tree  
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted  
in the quality certifications found at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time  
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be  
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third  
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
This product is subject to a license from Power One, Inc. related to digital power technology as set forth in U.S. Patent No. 7,000,125 and other related patents  
owned by Power One, Inc. These license rights do not extend to stand-alone POL regulators unless a royalty is paid to Power One, Inc.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
FN6859.4  
April 29, 2011  
41  
ZL2008  
Package Outline Drawing  
L36.6x6A  
36 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE  
Rev 1, 9/09  
4X  
4.0  
0.50  
36X  
6.00  
A
6
B
PIN #1  
INDEX AREA  
28  
36  
6
27  
PIN 1  
INDEX AREA  
1
4 .10 ± 0.10  
9
19  
(4X)  
0.15  
18  
10  
TOP VIEW  
36X 0.60 ± 0.10  
BOTTOM VIEW  
4
36X 0.25  
0.10 M C A B  
C
C
0.10  
MAX 0.90  
0.08 C  
( 5. 60 TYP )  
( 36 X 0 . 50 )  
SIDE VIEW  
(
4. 10 )  
5
C
0 . 2 REF  
(36X 0.25 )  
0 . 00 MIN.  
0 . 05 MAX.  
( 36X 0.80 )  
DETAIL "X"  
TYPICAL RECOMMENDED LAND PATTERN  
NOTES:  
1. Dimensions are in millimeters.  
Dimensions in ( ) for Reference Only.  
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.  
3.  
Unless otherwise specified, tolerance : Decimal ± 0.05  
4. Dimension b applies to the metallized terminal and is measured  
between 0.15mm and 0.30mm from the terminal tip.  
Tiebar shown (if present) is a non-functional feature.  
5.  
6.  
The configuration of the pin #1 identifier is optional, but must be  
located within the zone indicated. The pin #1 indentifier may be  
either a mold or mark feature.  
Compliant to JEDEC MO-220VJJD.  
7.  
FN6859.4  
April 29, 2011  
42  

相关型号:

ZL2008ALBFT1

Digital DC/DC Controller with Drivers and Pin-Strap Current Sharing
INTERSIL

ZL20200

Dual Band IS136/AMPS Transceiver
ZARLINK

ZL20200/LCE

RF and Baseband Circuit, 8 X 8 MM, QFN-56
ZARLINK

ZL20200/LDE

RF and Baseband Circuit, 8 X 8 MM, QFN-56
MICROSEMI

ZL20200/LDE

RF and Baseband Circuit, 8 X 8 MM, QFN-56
ZARLINK

ZL20200/LDE1

RF and Baseband Circuit, 8 X 8 MM, LEAD FREE, QFN-56
MICROSEMI

ZL20200/LDF

RF and Baseband Circuit, 8 X 8 MM, QFN-56
ZARLINK

ZL20200/LDF1

RF and Baseband Circuit, 8 X 8 MM, LEAD FREE, QFN-56
ZARLINK

ZL20200LCE

Dual Band IS136/AMPS Transceiver
ZARLINK

ZL20200LCF

Dual Band IS136/AMPS Transceiver
ZARLINK

ZL20200LDE

Dual Band IS136/AMPS Transceiver
ZARLINK

ZL20200LDF

Dual Band IS136/AMPS Transceiver
ZARLINK