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FSTYC9055D [INTERSIL]

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs; 抗辐射，抗SEGR P沟道功率MOSFET
FSTYC9055D
元器件型号： FSTYC9055D
生产厂家： INTERSIL CORPORATION    INTERSIL CORPORATION
描述和应用：

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
抗辐射，抗SEGR P沟道功率MOSFET
PDF文件： 总8页 (文件大小：77K)
下载文档：  下载PDF数据表文档文件
型号参数：FSTYC9055D参数
 查看货源

FSTYC9055D1

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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13 INTERSIL

FSTYC9055D3

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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13 INTERSIL

FSTYC9055R

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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19 INTERSIL

FSTYC9055R1

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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14 INTERSIL

FSTYC9055R1

 64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3

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0 RENESAS

FSTYC9055R3

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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15 INTERSIL

FSTYC9055R3

 64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3

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0 RENESAS

FSTYC9055R4

 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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16 INTERSIL

FSTYC9055R4

 暂无描述

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0 RENESAS

FSU01LG

 General Purpose GaAs FET

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64 EUDYNA

FSU02LG

 General Purpose GaAs FET

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50 EUDYNA

FSU05A20

 Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon,

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0 NIEC

FSU05A30

 Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon,

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0 NIEC

FSU05A40

 Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon,

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3 NIEC

FSU05A60

 FRD - Low Forward Voltage Drop

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52 NIEC
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