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元器件品牌
FSTYC9055R1
[INTERSIL]
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs; 抗辐射，抗SEGR P沟道功率MOSFET
元器件型号：
FSTYC9055R1
生产厂家：
INTERSIL CORPORATION
描述和应用：
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
抗辐射，抗SEGR P沟道功率MOSFET
晶体 晶体管 开关 脉冲
PDF文件：
总8页 (文件大小：77K)
下载文档：
下载PDF数据表文档文件
型号参数：FSTYC9055R1参数
查看货源
FSTYC9055R3
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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156
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15
INTERSIL
FSTYC9055R3
64A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
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0
RENESAS
FSTYC9055R4
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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16
INTERSIL
FSTYC9055R4
暂无描述
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156
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0
RENESAS
FSU01LG
General Purpose GaAs FET
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EUDYNA
FSU02LG
General Purpose GaAs FET
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50
EUDYNA
FSU05A20
Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon,
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156
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0
NIEC
FSU05A30
Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon,
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156
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0
NIEC
FSU05A40
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon,
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156
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3
NIEC
FSU05A60
FRD - Low Forward Voltage Drop
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on line
156
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52
NIEC
FSU05B60
FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
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156
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263
NIEC
FSU08C60
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, PLASTIC, SIMILAR TO TO-220AC, 2 PIN
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156
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0
NIEC
FSU1000
UNIVERSAL ADJUSTABLE FLASHER
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156
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0
LITTELFUSE
FSU1004
RELAY TIME DELAY 100FPM CHASSIS
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156
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0
LITTELFUSE
FSU10A20
Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon,
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156
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0
NIEC
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