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元器件品牌
FSYC9160D
[INTERSIL]
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs; 抗辐射，抗SEGR P沟道功率MOSFET
元器件型号：
FSYC9160D
生产厂家：
INTERSIL CORPORATION
描述和应用：
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
抗辐射，抗SEGR P沟道功率MOSFET
PDF文件：
总8页 (文件大小：64K)
下载文档：
下载PDF数据表文档文件
型号参数：FSYC9160D参数
查看货源
FSYC9160D1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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15
INTERSIL
FSYC9160D3
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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11
INTERSIL
FSYC9160R
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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17
INTERSIL
FSYC9160R1
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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14
INTERSIL
FSYC9160R3
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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15
INTERSIL
FSYC9160R4
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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9
INTERSIL
FSYC9160R4
Power Field-Effect Transistor, 47A I(D), 100V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN
Warning
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0
FAIRCHILD
FSYC9260D1
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT
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5
ETC
FSYC9260D3
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT
Warning
: Undefined variable $rtag in
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156
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6
ETC
FSYC9260D3
28A, 200V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
Warning
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156
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0
RENESAS
FSYC9260R1
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT
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156
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5
ETC
FSYC9260R1
28A, 200V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
RENESAS
FSYC9260R3
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT
Warning
: Undefined variable $rtag in
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on line
156
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5
ETC
FSYC9260R3
28A, 200V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, CERAMIC, LCC-3
Warning
: Undefined variable $rtag in
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156
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0
RENESAS
FSYC9260R4
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 28A I(D) | SMT
Warning
: Undefined variable $rtag in
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156
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11
ETC
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