IPS6008-03U [IPS]

High sensitive triggering levels; 高灵敏度触发水平
IPS6008-03U
型号: IPS6008-03U
厂家: IP SEMICONDUCTOR CO., LTD.    IP SEMICONDUCTOR CO., LTD.
描述:

High sensitive triggering levels
高灵敏度触发水平

文件: 总4页 (文件大小:229K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IP Semiconductor Co., Ltd.  
IPS6008-xxU  
High sensitive triggering levels, the IPS6008  
series SCRs is suitable for all applications, where  
the available gate current is limited, such as  
capacitive discharge ignitions, motor control in  
kitchen aids, overvoltage crowbar protection in  
low power supplies…  
MAIN FEATURES  
Symbol  
IT(AV)  
Value  
0.8  
Unit  
A
VDRM / VRRM  
IGT  
600  
V
≤ 200  
uA  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Storage Junction Temperature Range  
Operating Junction Temperature Range  
Tstg  
Tj  
-40 to +150  
-40 to +125  
Repetitive Peak Off-state Voltage  
Repetitive Peak Reverse Voltage  
Tj = 25℃  
Tj = 25℃  
VDRM  
VRRM  
600  
600  
V
RMS onstate current (180 conduction angle)  
Tc =77 ℃  
IT(RMS)  
IT(AV)  
0.8  
0.5  
A
A
Average on-state current (180 conduction angle) Tc =77 ℃  
Non repetitive surge peak onstate Current (Tj = 25)  
tp = 10 ms  
tp = 8.3 ms  
ITSM  
9
A
10  
I²t  
0.415  
0.2  
A²s  
A
I²t Value for fusing  
Peak gate current  
tp = 10ms  
IGM  
tp = 20us, Tj = 110 ℃  
Tj = 110 ℃  
Average gate power dissipation  
PG(AV)  
0.1  
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
1
IPS6008-xxU  
ELECTRICAL CHARACTERISTICS (Tj = 25 unless otherwise specified)  
IPS6008-xxU  
Symbol  
Test Condition  
Unit  
03  
05  
06  
08  
MIN  
10  
30  
20  
50  
30  
60  
50  
80  
IGT  
uA  
V
MAX  
VD = 6V RL = 100Ω  
TYP  
0.6  
0.8  
VGT  
MAX  
VD=VDRM, RL=3.3KΩ, RGK = 1KΩ  
Tj = 110 ℃  
VGD  
MIN  
0.2  
V
IL  
IG = 1mA RGK = 1KΩ  
IT = 50mA RGK = 1KΩ  
MAX  
MAX  
6
5
mA  
mA  
IH  
TYP  
1.3  
1.7  
VTM  
IT = 1A t p = 380uS Tj = 25 ℃  
V/us  
MAX  
dV/dt  
VD = 67% VDRM RGK = 1KΩ Tj = 110 ℃  
VD = VDRM RGK = 1KΩ Tj = 25 ℃  
VD = VDRM RGK = 1KΩ Tj = 110 ℃  
VR = VRRM RGK = 1KΩ Tj = 25 ℃  
VD = VRRM RGK = 1KΩ Tj = 110 ℃  
MIN  
10  
5
V/us  
uA  
MAX  
MAX  
MAX  
MAX  
IDRM  
IRRM  
0.1  
5
mA  
uA  
0.1  
mA  
Please ask the IGT values to our sales if you want to get another values.  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Rth (j c)  
Junction to case  
TO-92  
75  
/W  
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
2
IPS6008-xxU  
PACKAGE MECHANICAL DATA  
TO-92  
Dimensions  
Ref  
Millimeters  
Inches  
Min  
Min  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
2.04  
-
Max  
5.2  
Max  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
-
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.080  
-
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
-
K
N
P
V
2.66  
2.54  
-
0.105  
0.100  
-
3.43  
0.135  
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
3
IPS6008-xxU  
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
4

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