IPS808-05D [IPS]
High sensitive triggering levels; 高灵敏度触发水平
| 型号： | IPS808-05D |
| 厂家： | 
IP SEMICONDUCTOR CO., LTD. |
| 描述： | High sensitive triggering levels |
| 文件： | 总5页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IP Semiconductor Co., Ltd.
IPS808-xxD
High sensitive triggering levels, the IPS808 series
SCRs is suitable for all applications, where the
available gate current is limited, such as capacitive
discharge ignitions, motor control in kitchen aids,
overvoltage crowbar protection in low power
supplies…
1. Cathode
2. Anode
RGK
3. Gate
MAIN FEATURES
DPAK(TO-252)
Symbol
IT(AV)
Value
8
Unit
A
VDRM / VRRM
IGT
800
V
≤ 100
uA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +110
℃
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
VDRM
VRRM
800
800
V
RMS on–state current (180 conduction angle)
Tj = 105℃
IT(RMS)
IT(AV)
8
5
A
A
Average on-state current (180 conduction angle) Tj = 105℃
Non repetitive surge peak on–state Current (Tj = 25℃)
tp = 10ms
tp = 8.3ms
ITSM
70
73
A
I²t Value for fusing
tp = 10ms
I²t
24.5
50
A²s
Critical rate of rise of on state current (IG = 2 X IGT, tr≤100ns,
f = 50Hz, Tj = 110℃
dI/dt
A/us
IGM
4
1
Peak gate current
tp = 20us, Tj = 125℃
Tj = 125℃
A
Average gate power dissipation
PG(AV)
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
1
IPS808-xxD
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPS808-xxD
Symbol
Test Condition
Unit
05
MIN
20
IGT
uA
V
MAX
100
VD = 6V RL = 140Ω
VGT
MAX
MIN
0.8
0.1
VD=VDRM, RL=3.3KΩ, RGK = 220Ω
Tj = 125℃
VGD
V
IL
IH
IG = 1mA RGK = 1KΩ
MAX
MAX
MAX
MIN
6
mA
mA
V
IT = 50mA RGK = 1KΩ
5
VTM
dV/dt
IT = 16A tp = 380uS Tj = 25 ℃
VD = 65% VDRM RGK = 220Ω Tj = 125℃
VDRM = VRRM RGK = 220Ω Tj = 25℃
VDRM = VRRM RGK = 220Ω Tj = 125℃
1.6
5
V/us
uA
MAX
MAX
5
1
IDRM
RGK
mA
KΩ
6 ~ 35
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j – c)
Junction to case(DC)
TO-252
20
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS808-xxD
PACKAGE MECHANICAL DATA
TO-252(DPAK)
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
3
IPS808-xxD
Dimensions
Ref
Millimeters
Typ
Inches
Typ
Min
2.2
Max
Min
0.086
0.001
0.021
0.200
0.017
0.019
0.236
0.252
0.173
0.368
Max
0.095
0.009
0.026
0.212
0.024
0.024
0.244
0.264
0.185
0.397
A
A2
B
2.4
0.23
0.65
5.4
0.03
0.55
5.1
B2
C
0.45
0.48
6
0.62
0.62
6.2
C2
D
E
6.4
6.7
G
4.40
9.35
4.70
10.1
H
L1
L2
V1
V1
0.8
4º
0.031
4º
1.37
0º
1.5
8º
0.054
0º
0.059
8º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4
IPS808-xxD
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
5
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